© 2002 IXYS All rights reserved
1 - 2
IRMS = 175 A
VRRM = 800-1600 V
VRSM VRRM Type
VDSM VDRM
VV
800 800 MMO 175-08io7 MLO 175-08io7
1200 1200 MMO 175-12io7 MLO 175-12io7
1600 1600 MMO 175-16io7 MLO 175-16io7
Features
• Thyristor controller for AC (circuit
W1C acc. to IEC) for mains frequency
• Isolation voltage 3000 V~
• Planar glass passivated chips
• Low forward voltage drop
• Lead suitable for PC board solering
Applications
• Switching and control of single and
three phase AC circuits
• Light and temperature control
• Softstart AC motor controller
• Solid state switches
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling
• High power density
• Small and light weight
MMO 175
MLO 175
Symbol Conditions Maximum Ratings
IRMS TC = 85°C, 50 - 400 Hz, (per single controller) 175 A
ITRMS 125 A
ITAVM TC = 85°C; 180° sine 80 A
ITSM TVJ = 45°C t = 10 ms (50 Hz), sine 1500 A
VR = 0 t = 8.3 ms (60 Hz), sine 1600 A
TVJ = 125°C t = 10 ms (50 Hz), sine 1350 A
VR = 0 t = 8.3 ms (60 Hz), sine 1450 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 11200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 10750 A2s
TVJ = 125°C t = 10 ms (50 Hz), sine 9100 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 8830 A2s
(di/dt)cr TVJ = 125°C repetitive, IT = 80 A 150 A/µs
f = 50 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.45 A non repetitive, IT = ITAVM 500 A/µs
diG/dt = 0.45 A/µs
(dv/dt)cr TVJ = 125°C; VDR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = 125°C tp = 30 µs 10 W
IT = ITAVM tp = 300 µs 5 W
PGAVM 0.5 W
VRGM 10 V
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M4) 1.5...2.0/14...18 Nm/lb.in.
Weight typ. 18 g
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.
AC Controller Modules
Preliminary Data
241
I / H G / F
G / F
I / H
A
N
MMO
(W1C)
MLO
(W1H) A
© 2002 IXYS All rights reserved
2 - 2
Symbol Conditions Characteristic Values
ID , IRTVJ = 125°C; VR = VRRM; VD = VDRM ≤5mA
VTIT= 200 A; TVJ = 25°C ≤1.57 V
VT0 For power-loss calculations only 0.85 V
rT3.7 mΩ
VGT VD = 6 V TVJ = 25°C ≤1.5 V
TVJ = -40°C ≤1.6 V
IGT VD = 6 V TVJ = 25°C ≤100 mA
TVJ = -40°C ≤200 mA
VGD TVJ = 125°C; VD = 2/3 VDRM ≤0.2 V
IGD ≤10 mA
ILTVJ = 25°C; tP = 10 µs ≤450 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞≤200 mA
tgd TVJ = 25°C; VD = ½ VDRM ≤2µs
IG = 0.45 A; diG/dt = 0.45 A/µs
RthJC per thyristor; DC 0.5 K/W
per module 0.25 K/W
RthCH per thyristor; sine 180° el typ. 0.12 K/W
per module typ. 0.06 K/W
dSCreeping distance on surface 11.2 mm
dACreepage distance in air 17.0 mm
aMax. allowable acceleration 50 m/s2
MMO 175
MLO 175
10 100 1000
1
10
100
1000
100101102103104
0.1
1
10
IG
VG
mA
mA
IG
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
µs
tgd
V
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
IGD, T VJ = 125°C
3
4
2
156
Limit
typ.
TVJ = 25°C
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
