MMO 175 MLO 175 IRMS = 175 A VRRM = 800-1600 V AC Controller Modules Preliminary Data VRSM VDSM VRRM VDRM V V 800 1200 1600 800 1200 1600 MMO Type A (W1C) I/H MMO 175-08io7 MMO 175-12io7 MMO 175-16io7 MLO 175-08io7 MLO 175-12io7 MLO 175-16io7 G/F N A MLO (W1H) G/F I/H Symbol Conditions Maximum Ratings IRMS ITRMS ITAVM TC = 85C, 50 - 400 Hz, (per single controller) ITSM TVJ = 45C VR = 0 175 125 80 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1500 1600 A A TVJ = 125C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1450 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 11200 10750 A2s A2s TVJ = 125C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9100 8830 A2s A2s 150 A/s 500 A/s 1000 V/s 10 5 W W PGAVM 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+150 150 -40...+125 C C C 2500 3000 V~ V~ I2t (di/dt)cr TC = 85C; 180 sine TVJ = 125C repetitive, IT = 80 A f = 50 Hz, tP = 200 s VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/s (dv/dt)cr TVJ = 125C; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) PGM TVJ = 125C IT = ITAVM VISOL 50/60 Hz, RMS IISOL 1 mA Md Mounting torque (M4) Weight typ. tp = 30 s tp = 300 s t = 1 min t=1s Features * Thyristor controller for AC (circuit W1C acc. to IEC) for mains frequency * Isolation voltage 3000 V~ * Planar glass passivated chips * Low forward voltage drop * Lead suitable for PC board solering Applications * Switching and control of single and three phase AC circuits * Light and temperature control * Softstart AC motor controller * Solid state switches Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling * High power density * Small and light weight 1.5...2.0/14...18 Nm/lb.in. 18 g 241 Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated. 1-2 (c) 2002 IXYS All rights reserved MMO 175 MLO 175 Symbol Conditions Characteristic Values ID , IR TVJ = 125C; VR = VRRM; VD = VDRM 5 mA VT IT 1.57 V VT0 rT For power-loss calculations only 0.85 3.7 V m VGT VD = 6 V 1.5 1.6 V V = 200 A; TVJ = 25C TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 100 200 mA mA IGT VD = 6 V VGD IGD TVJ = 125C; VD = 2/3 VDRM 0.2 10 V mA IL TVJ = 25C; tP = 10 s IG = 0.45 A; diG/dt = 0.45 A/s 450 mA IH TVJ = 25C; VD = 6 V; RGK = 200 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.45 A; diG/dt = 0.45 A/s 2 s RthJC per thyristor; DC per module 0.5 0.25 K/W K/W 0.12 0.06 K/W K/W 11.2 17.0 50 mm mm m/s2 RthCH dS dA a per thyristor; sine 180 el per module Creeping distance on surface Creepage distance in air Max. allowable acceleration Dimensions in mm (1 mm = 0.0394") typ. typ. 10 1: IGT, TVJ = 125C V 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C VG 3 2 1 5 6 1 4 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125C 0.1 100 101 5W 6: PGM = 10 W 102 103 IG mA 104 Fig. 1 Gate trigger characteristics 1000 TVJ = 25C s tgd typ. 100 Limit 10 1 10 mA 100 1000 IG Fig. 2 Gate trigger delay time (c) 2002 IXYS All rights reserved 2-2