NSVMMBT6517LT1G - ON Semiconductor

October, 2013 − Rev. 8

1Publication Order Number:

MMBT6517LT1/D

MMBT6517L,

NSVMMBT6517L

High Voltage Transistor

NPN Silicon

Features

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage VCEO 350 V

Collector −Base Voltage VCBO 350 V

Emitter − Base Voltage VEBO 5.0 V

Base Current IB25 mA

Collector Current − Continuous IC100 mA

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 556 °C/W

Total Device Dissipation

Alumina Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

MARKING DIAGRAM

http://onsemi.com

SOT−23 (TO−236AB)

CASE 318

STYLE 6

1Z M G

1Z = Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

COLLECTOR

BASE

EMITTER

Device Package Shipping†

ORDERING INFORMATION

MMBT6517LT1G SOT−23

(Pb−Free)

3000 / Tape &

Reel

MMBT6517LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NSVMMBT6517LT1G SOT−23

(Pb−Free)

3,000 / Tape &

Reel

MMBT6517L, NSVMMBT6517L

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 1.0 mA)

V(BR)CEO

350 −

Collector−Base Breakdown Voltage

(IC = 100 mA)

V(BR)CBO

350 −

Emitter−Base Breakdown Voltage

(IE = 10 mA)

V(BR)EBO

6.0 −

Collector Cutoff Current

(VCB = 250 V)

ICBO

−50

Emitter Cutoff Current

(VEB = 5.0 V)

IEBO

−50

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mA, VCE = 10 V)

(IC = 10 mA, VCE = 10 V)

(IC = 30 mA, VCE = 10 V)

(IC = 50 mA, VCE = 10 V)

(IC = 100 mA, VCE = 10 V)

hFE

−

200

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 10 mA, IB = 1.0 mA)

(IC = 20 mA, IB = 2.0 mA)

(IC = 30 mA, IB = 3.0 mA)

(IC = 50 mA, IB = 5.0 mA)

VCE(sat)

−

0.30

0.35

0.50

1.0

Base −Emitter Saturation Voltage

(IC = 10 mA, IB = 1.0 mA)

(IC = 20 mA, IB = 2.0 mA)

(IC = 30 mA, IB = 3.0 mA)

VBE(sat)

−

0.75

0.85

0.90

Base −Emitter On Voltage

(IC = 100 mA, VCE = 10 V)

VBE(on)

−2.0

SMALL−SIGNAL CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = 10 mA, VCE = 20 V, f = 20 MHz)

40 200

MHz

Collector−Base Capacitance

(VCB = 20 V, f = 1.0 MHz)

Ccb

−6.0

Emitter−Base Capacitance

(VEB = 0.5 V, f = 1.0 MHz)

Ceb

−80

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

MMBT6517L, NSVMMBT6517L

http://onsemi.com

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

200

100

VCE = 10 V TJ = 125°C

25°C

-55°C

Figure 2. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

100

f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

hFE, DC CURRENT GAIN

TJ = 25°C

VCE = 20 V

f = 20 MHz

Figure 3. “On” Voltages

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

V, VOLTAGE (VOLTS)

1.4

1.2

0.6

0.8

1.0

0.4

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 5.0

Figure 4. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

2.5

RV, TEMPERATURE COEFFICIENTS (mV/ C)°

2.0

1.5

1.0

0.5

-0.5

-1.0

-1.5

-2.0

-2.5

RqVC for VCE(sat)

RqVB for VBE

25°C to 125°C

-55°C to 25°C

-55°C to 125°C

IB +10

Figure 5. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

2000.2 0.5 1.0 2.0 5.0 10 20 50 100

100

2.0

3.0

5.0

1.0

C, CAPACITANCE (pF)

7.0

50 TJ = 25°C

Ccb

Ceb

Figure 6. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

1 10 100 1000

1000

100

0.1

1 ms

10 ms

100 ms

1.0 s

MMBT6517L, NSVMMBT6517L

http://onsemi.com

Figure 7. Turn−On Time

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

t, TIME (ns)

1.0k

Figure 8. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70

100

200

300

500

700

td @ VBE(off) = 2.0 V

VCE(off) = 100 V

IC/IB = 5.0

TJ = 25°C

t, TIME (ns)

10k

100

200

300

500

700

1.0k

2.0k

3.0k

5.0k

7.0k

VCE(off) = 100 V

IC/IB = 5.0

IB1 = IB2

TJ = 25°C

Figure 9. Switching Time Test Circuit

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

10k0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k

t, TIME (ms)

Figure 10. Thermal Response

+10.8 V

-9.2 V

+VCC

2.2 k 20 k

50 W SAMPLING SCOPE

1/2MSD7000

1.0 k

VCC ADJUSTED

FOR VCE(off) = 100 V

APPROXIMATELY

-1.35 V (ADJUST FOR V(BE)off = 2.0 V)

PULSE WIDTH ≈ 100 ms

tr, tf ≤ 5.0 ns

DUTY CYCLE ≤ 1.0%

FOR PNP TEST CIRCUIT,

REVERSE ALL VOLTAGE POLARITIES

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

ZqJC(t) = r(t) • RqJC

ZqJA(t) = r(t) • RqJA

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

MMBT6517L, NSVMMBT6517L

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

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copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC

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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

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Phone: 81−3−5817−1050

MMBT6517LT1/D

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