Silicon Power Transistors Type Case 3 Maximum Ratings at Characteristics T..4, = 25C No. go Tease = 25C a8 Dee Vegsat) & 2, A - A A ,| Min. | Max. Veeo|Vceo| Veeoi!cioc)| Ptot | fe | Min. | Max. | te |{ Ip jMax.| fy | Tore! Vv Vv Vv A WwW A A A Vv MHz HS TIP14 TABPAC| EP 80 60 7 4 10 0-2 30 150 1-0 0-1 0-6 40 0-6 NPN Consumer TIP24 TABPAC| EP 70 70 9 2 108 1:5 19 136 1-5 0-15 | 1:5 10 _ Power TIP27 TABPAC| DM | 300 | 300 6 0-5 108 0-2 25 150 0-2 0-02 | 2-5 2 _ NPN BLY47A| TO66 3DM | 100 75 8 3-0 35 1-0 30 400 1-0 0-1 0-75 15 2-0 Industrial BLY48A TO66 3DM | 100 75 8 3-0 35 10 60 200 1:0 0-1 0-75 15 2-0 Power BLY49A TO66 3DM | 250 150 8 3-0 35 1-0 30 100 1-0 0-1 0-75 415 2-0 BLY50A TO66 3DM | 250 150 8 3-0 35 1:0 60 200 1:0 0-1 0-75 15 2:0 BLY47 TO3 3DM | 100 75 8 3-0 40 1:0 30 100 1:0 0-1 0-75 15 2-0 BLY48 TO3 3DM | 100 75 8 3-0 40 1-0 60 200 1-0 0-1 0-75 15 2-0 BLY49 TOS 3DM | 250 | 150 8 3-0 40 10 30 100 10 0-1 0-75 15 2.0 BLY50 TO3 3DM | 250 150 8 3-0 40 1-0 60 200 1:0 0-1 0-75 15 2-0 NPN 28024 MS3 3DM | 100 32 10 75 100 2:0 20 _ 2-0 0-2 0-8 10 2:0 Professional 28025 MS3 3DM } 150 60 10 75 100 2:0 20 _ 2:0 0-2 0-8 10 2-0 Power 28026 MS3 3DM | 200 100 10 75 100 2:0 20 _ 20 0-2 0-38 10 2:0 7/16 2N3996 STUD EP 100 80 8 5 30? 1-0 40 120 5 0-5 2-0 40 1:5 2N3997 ISO- EP 100 80 8 5 30? 4-0 80 240 5 0-5 2-0 40 2-0 UL} LATED 2N3998 [ 7/16 EP 4100 80 8 5 30? 40 40 120 5 0-5 2-0 40 15 2N3999 1 STUD EP 100 80 8 5 30? 1-0 80 240 5 0-5 2:0 40 2:0 2N4301 TO-61 EP 100 80 8 10 50? 5-0 30 120 10 1:3 1:0 40 1:5 2N3846 TO-63 | 3DM { 300 200 10 20 150? 10 10 60 10 1-6 1-0 40 7 2N3847 TO-63 | 3DM]| 400 300 10 20 150? 10 10 60 10 1-6 1:0 10 7 2N3848 TQ-63 | 3DM | 300 200 10 20 150? 15 10 60 15 3-0 1:5 10 7 2N3849 TO-63 | 3DM{ 400 | 300 10 20 150? 115 10 60 15 30 15 10 7 2N4002 TO-63 EP 4100 80 8 30 1002 15 20 80 30 6-0 1:2 30 3 2N4003 TO-63 EP 120 100 8 30 1002 15 20 80 30 6-0 1:2 30 3 NOTE 1: The following symbols have been used throughout the Product Summary: Under Construction: Under hee: Under fr: Under Dissipation: A Alloyed * hte o ftp {+ dissipation at T case = 25C D Diffused A thte & Epitaxial t - typical G Grown M Mesa P Planar NOTE 2: Case temperature 100C NOTE 3: Case temperature 75C 16 NOTE 4: - 15) = IB), torr = ts + tt