Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681
2N5680 2N5682
PNP NPN
TO-39 TO-39
These Are High Voltage & High Current, General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION SYMBOL 2N5679 2N5680 UNITS
2N5681 2N5682
Collector -Emitter Voltage VCEO 100 120 V
Collector -Base Voltage VCBO 100 120 V
Emitter -Base Voltage VEBO 4.0 V
Collector Current Continuous IC 1.0 A
Base Current IB 0.5 A
Power Dissipation @Ta=25 degC PD 1.0 W
Derate Above 25deg C 5.7 mW/deg C
Power Dissipation @Tc=25 degC PD 10 W
Derate Above 25deg C 57 mW/deg C
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) 17.5 deg C/W
Junction to Ambient Rth(j-a) 175 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5680 UNITS
2N5681 2N5682
Collector -Emitter Voltage VCEO(sus) IC=10mA,IB=0 >100 >120 V
Collector-Cut off Current ICBO VCB=100V, IE=0 <1.0 - uA
VCB=120V, IE=0 - <1.0 uA
ICEO VCE=70V, IB=0 <10 - uA
VCE=80V, IB=0 - <10 uA
ICEX VCE=100V,VEB=1.5V <1.0 - uA
VCE=120V,VEB=1.5V - <1.0 uA
TC=150 deg C
VCE=100V,VEB=1.5V <1.0 - mA
VCE=120V,VEB=1.5V - <1.0 mA
Emitter-Cut off Current IEBO VEB=4V, IC=0 <1.0 <1.0 uA
IS / IEC QC 700000
IS / IEC QC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 3