2011-12-19
1
SMBTA42/MMBTA42
1
2
3
NPN Silicon High-Voltage Transistors
• Low collector-emitter saturation voltage
• Complementary types:
SMBTA92 / MMBTA92(PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
SMBTA42/MMBTA42 s1D 1=B 2=E 3=C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 300 V
Collector-base voltage VCBO 300
Emitter-base voltage VEBO 6
Collector current IC500 mA
Base current IB100
Total power dissipation-
TS ≤ 74 °C
Ptot 360 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 210 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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SMBTA42/MMBTA42
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 300 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 300 - -
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 200 V, IE = 0
VCB = 200 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
40
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VCEsat - - 0.5 V
Base emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VBEsat - - 0.9
AC Characteristics
Transition frequency
IC = 10 MHz, VCE = 20 V, f = 100 MHz
fT50 70 - MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
Ccb - - 3 pF
1Pulse test: t < 300µs; D < 2%
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SMBTA42/MMBTA42
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00844SMBTA 42/43
10
10 mA
h
C
10
5
FE
10
3
1
10
0
5
10 10 10
-1 0 1 2 3
Ι
5
10
2
555
Collector current IC = ƒ(VBE)
VCE = 10V
EHP00843SMBTA 42/43
10
0V
BE
1.5
mA
C
10
3
1
10-1
5
0.5 1.0
100
5
Ι
V
5
102
Operating range IC = ƒ(VCEO)
TA = 25°C, D = 0
10 0 10 1 10 2 10 3
V
VCE
-1
10
0
10
1
10
2
10
3
10
mA
IC
10 µs
100 µs
1 ms
DC
Collector cutoff current ICBO = ƒ(TA)
VCBO = 160 V
EHP00842SMBTA 42/43
10
0C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
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SMBTA42/MMBTA42
Transition frequency fT = ƒ(IC)
VCE = 10 V, f = 100 MHz
EHP00839SMBTA 42/43
10
MHz
10 10 mA
f
C
1010
T
555
Ι
0123
10
3
2
10
1
5
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
10
20
30
40
50
60
70
pF
90
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
40
80
120
160
200
240
280
320
mW
400
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
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SMBTA42/MMBTA42
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00840SMBTA 42/43
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
tp
=
DT
tp
T
totmax
tot
PDC
P
p
t
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SMBTA42/MMBTA42
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-12-19
7
SMBTA42/MMBTA42
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
