SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2007
1-17-2007 REV C
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5807US thru 1N5811US
1N5807US–1N5811US
DESCRIPTION APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetica ll y se aled with voidless-glass construction usi ng
an internal “Category I” metallurgical bond. These devices are also available in axial-
leaded package configurations (see separate data sheet for 1N5807 thru 1N5811).
Microsemi also offers numerous other rectifier products to meet higher and lower current
ratings with various recovery time speed requirements including standard, fast, and
ultrafast device types in both throu gh-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
• Surface mount package series equiv ale nt to the
JEDEC registered 1N5807 to 1N5 811 series
• Voidless-hermetically-sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category I” Metallurgical bonds
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/477
• Axial-leaded e quivalents also available (see separate
data sheet for 1N5807 thru 1N5811)
• Ultrafast recovery 6 Amp rectifiers series 50 to 150 V
• Military and other high-reliability appl ications
• Switching power supplies or other applications
requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS MECHANICAL AND PACKAGING
• Operating Temperature: -65oC to +175oC.
• Storage Temperature: -65oC to +175oC.
• Average Rectified For ward Current (IO): 6 Amps @
TEC = 75ºC End Cap temperature (see note 1)
• Thermal Resistance: 10 ºC/W junctio n to end cap
• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
• Forward Surge Current (8.3 ms half sine) 125 Amps
• Solder temperature: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING & POLARITY: Cathode band only
• Tape & Reel option: Standard per EIA-481-B
• Weight: 539 mg
• See package dimensions a nd recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
BREAKDOWN
VOLTAGE
(MIN.)
@ 100μA
VBR
AVERAGE
RECTIFIED
CURRENT
IO1
@TEC=75ºC
(Note 1)
AVERAGE
RECTIFIED
CURRENT
IO2
@TA=55ºC
(Note 2)
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(NOTE 3)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
trr
VOLTS VOLTS AMPS AMPS VOLTS μA AMPS ns
25oC 100oC25
oC 100oC
1N5807US
1N5809US
1N5811US
50
100
150
60
110
160
6.0
6.0
6.0
3.0
3.0
3.0
0.875
0.875
0.875
0.800
0.800
0.800
5
5
5
150
150
150
125
125
125
30
30
30
NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min
Package “E”
or D-5B
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright © 2007
1-17-2007 REV C
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5807US thru 1N5811US
1N5807US–1N5811US
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: T he minimum voltage the device will exhibit at a specified current.
VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the operatin g
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
GRAPHS
FIGURE 1 FIGURE 2
TYPICAL FORWARD CURRENT TYPICAL REVERSE CURRENT vs. VOLTAGE
vs. FORWARD VOLTAGE
FIGURE 3
FORWARD PULSE CURRENT vs. DURATION
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
RE
CO
VERY
G
LA
SS
RE
C
TIFIER
S
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright © 2007
1-17-2007 REV C
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5807US thru 1N5811US
1N5807US–1N5811US
FIGURE 4
MULTIPLE SURGE CURRENT vs. DURATION
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously PAD LAYOUT
been identified as “D-5B”
INCHES mm
A 0.288 7.32
B 0.070 1.78
C 0.155 3.94
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
INCHES mm
MIN MAX MIN MAX
BL .205 .225 5.21 5.72
BD .137 .142 3.48 3.61
ECT .019 .028 0.48 0.711
S .003 --- 0.08 ---
