SIEMENS Silicon Switching Diode Array Electrically insulated high-voltage BAW 101 medium-speed diodes { -VPS05178 Type Marking Ordering Code Pin Configuration Package?) (tape and reel) BAW 101 JPs Q62702-A712 4 F 1 | SOT-143 3 S ! 2 EHAO7008 Maximum Ratings Parameter Symbol Values Unit Reverse voltage Ve 300 Vv Peak reverse voitage Vam 300 Forward current Ir 250 mA Peak forward current Te 500 Surge forward current, t= 1 ps Irs 4.5 A Total power dissipation, Ts < 35 C Prot 350 mw Junction temperature Ti 150 c Storage temperature range Tag ~ 65 ... + 150 Thermal Resistance Junction - ambient?) Rin sa < 470 KW Junction - soldering point Riss < 330 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 382 5.91 SIEMENS BAW 101 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values min . | typ. | max. Unit DC characteristics Breakdown voltage Tien) = 100 pA Vir) 300 Forward voltage Ip = 100mA Ve Reverse current Va = 250 V Va = 250 V, Ta = 150C Tr ~ 150 AC characteristics Diode capacitance Va = 0, f= 1 MHz Co pF Reverse recovery time Ie = 10mA, ir=10mA, & = 100 Q measured at Jn=1mA tr us Test circuit for reverse recovery time OWT. Ly th Oscillograph a fees Pulse generator: tp = 100 ns, D=0.05 t= 0.6 ns, R= 50 Q Semiconductor Group Oscillograph: R= 50Q tr = 0.35 ns C<1pF 383 SIEMENS BAW 101 Forward current ir = f (Ta*; Ts) Forward current fe = f (VF) * Package mounted on epoxy Ta = 25C 300 BAW O1 HBOO 102 19 BAW 101 EHBOO103 iP A mA i, ~ N NOL | N 200 N X 10-1 N NTN 5 N N iE NN IN \ 100 K 10-2 \\ 5 \ -3 % 50 100 *C 150 Oo 1.0 v2.0 Ik Reverse current /n = f (Ta) BAW 107 EHBOOTOS 10 nA fp ia* 5 103 5 10? 5 10! 0 50 100 C 180 - 7 A Semiconductor Group 384