1N4151TR - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1996 Sep 03 1999 Jun 01

DISCRETE SEMICONDUCTORS

1N4150; 1N4151

High-speed diodes

M3D176

1999 Jun 01 2

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4150; 1N4151

FEATURES

•Hermetically sealed leaded glass

SOD27 (DO-35) package

•High switching speed: max. 4 ns

•General application

•Continuous reverse voltage:

max. 50 V

•Repetitive peak reverse voltage:

max. 75 V

•Repetitive peak forward current:

max. 600 mA and 450 mA

respectively.

APPLICATIONS

•High-speed switching

•1N4150: general purpose use in

computer and industrial

applications

•1N4151: military and industrial

applications.

DESCRIPTION

The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar

technology, and encapsulated in hermetically sealed leaded glass SOD27

(DO-35) packages.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

The marking band indicates the cathode.

handbook, halfpage

MAM246

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRRM repetitive peak reverse voltage −75 V

VRcontinuous reverse voltage −50 V

IFcontinuous forward current see Fig.2; note 1

1N4150 −300 mA

1N4151 −200 mA

IFRM repetitive peak forward current

1N4150 −600 mA

1N4151 −450 mA

IFSM non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs−4A

t=1ms −1A

t=1s −0.5 A

Ptot total power dissipation Tamb =25°C; note 1 −500 mW

Tstg storage temperature −65 +200 °C

Tjjunction temperature −200 °C

1999 Jun 01 3

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4150; 1N4151

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VFforward voltage see Fig.3

1N4150 IF= 1 mA 540 620 mV

IF= 10 mA 660 740 mV

IF= 50 mA 760 860 mV

IF= 100 mA 820 920 mV

IF= 200 mA 870 1000 mV

1N4151 IF=50mA −1000 mV

IRreverse current VR= 50 V; see Fig.5

1N4150 −0.1 µA

1N4151 −0.05 µA

IRreverse current VR= 50 V; Tj= 150 °C; see Fig.5

1N4150 −100 µA

1N4151 −50 µA

Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6

1N4150 −2.5 pF

1N4151 −2pF

rr reverse recovery time when switched from IF= 10 mA to

IR= 1 mA; RL= 100 Ω; measured at

IR= 0.1 mA; see Fig.7

1N4150 −6ns

when switched from IF= 10 mA to 200 mA

to IR= 10 mA to 200 mA; RL= 100 Ω;

measured at IR= 0.1 ×IF; see Fig.7

−4ns

when switched from IF= 200 mA to 400 mA

to IR= 200 mA to 400 mA; RL= 100 Ω;

measured at IR= 0.1 ×IF; see Fig.7

−6ns

rr reverse recovery time when switched from IF= 10 mA to

IR= 10 mA; RL= 100 Ω; measured at

IR= 1 mA; see Fig.7

1N4151 −4ns

when switched from IF= 10 mA to

IR= 60 mA; RL= 100 Ω; measured at

IR= 1 mA; see Fig.7

−2ns

fr forward recovery time when switched to IF= 200 mA; tr= 0.4 ns;

measured at VF= 1 V; see Fig.8 −10 ns

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W

Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 350 K/W

1999 Jun 01 4

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4150; 1N4151

GRAPHICAL DATA

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

handbook, halfpage

0 100 200

400

300

200

100

MBG456

Tamb (oC)

(mA)

(1)

(2)

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

(1) 1N4150. (2) 1N4151.

Fig.3 Forward current as a function of forward

voltage.

(1) Tj= 175 °C; typical values.

(2) Tj=25°C; typical values.

handbook, halfpage

012

600

200

400

MGD291

VF (V)

(mA)

(1) (2)

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

Based on square wave currents.

Tj=25°C prior to surge.

handbook, full pagewidth

MBG704

10 tp (µs)

IFSM

(A)

102

10−1104

102103

1999 Jun 01 5

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4150; 1N4151

Fig.5 Reverse current as a function of junction

temperature.

(1) VR= 75 V; typical values.

(2) VR= 20 V; typical values.

handbook, halfpage

0 100 Tj (oC) 200

103

102

10−1

10−2

10 (1)

(µA)

MGD290

(2)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj=25°C.

handbook, halfpage

01020

1.2

1.0

0.6

0.4

0.8

MGD004

VR (V)

(pF)

1999 Jun 01 6

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4150; 1N4151

Fig.7 Reverse recovery voltage test circuit and waveforms.

handbook, full pagewidth

trr

(1)

IFt

output signal

trt

10%

90%

input signal

V = V I x R

RF S

R = 50

SΩIF

D.U.T.

R = 50

iΩ

SAMPLING

OSCILLOSCOPE

MGA881

(1) The value of IR is dependent on product type.

Fig.8 Forward recovery time test circuit and waveforms.

Input signal: forward pulse rise time tr= 0.4 ns; forward pulse duration tp= 100 ns; duty factor δ= 0.01.

trt

10%

90%

input

signal

R = 50

SΩ

R = 50

iΩ

OSCILLOSCOPE

Ω1 k Ω450

D.U.T.

MBH181

Vfr

tfr t

output

signal

(V)

1.0

1999 Jun 01 7

Philips Semiconductors Product speciﬁcation

High-speed diodes 1N4150; 1N4151

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

Note

1. The marking band indicates the cathode.

SOD27 DO-35A24 SC-40 97-06-09

Hermetically sealed glass package; axial leaded; 2 leads SOD27

UNIT b

max.

mm 0.56

max. G1

max.

25.44.251.85

min.

DIMENSIONS (mm are the original dimensions)

LD L

(1)

0 1 2 mm

scale

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999 65

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Printed in The Netherlands 115002/03/pp8 Date of release: 1999 Jun 01 Document order number: 9397 750 05882