fiAMOSPEC SILICON POWER TRANSISTORS PNP The MJ15023 and MJ15025 are power base power transistors MJ15023 designed for high power audio, disk head positioners and other MJ15025 linear applications. FEATURES * High Safe Operating Area * High DC Current Gain- 16 AMPERE hee= 15(Min)@I,= 8.0 A Vog=4.0 V SILICON POWER TRANSISTORS 200 - 250 VOLTS MAXIMUM RATINGS 250 WATTS Characteristic Symbol MJ15023 | MJ15025 Unit Collector-Emitter Voltage Vero 200 250 Vv Collector-Base Voltage Vepo 350 400 V Emitter-Base Voltage Vepo 5.0 V Collector-Emitter Voltage Voex 400 Vv Collector Current - Continuous Io 16 A - Peak lom 30 B Base Current-Continuous . lp 5 A ey =t t D 7 F Total Power Dissipation @T, = 25C Py 250 Ww _ Derate above 25C 1.43 wc ----t I Operating and Storage Junction Ty Tst C Jo | 1 Temperature Range -65 to +200 2 | i Os I" c DS ; THERMAL CHARACTERISTICS L Ot A Characteristic Symbol Max UNIT . . . 9 Thermal ResistanceJunction to Case Rejc 0.7 CW PIN 1.BASE 2.EMITTER COLLECTOR(CASE) FIGURE -1 POWER DERATING MILLIMETERS DIM MIN MAX A 38.75 | 39.96 B 19.28 22.23 Cc 7.96 9.28 D 11.18 12.19 E 25.20 | 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 | 30.40 I 16.64 | 17.30 J 3.88 4.36 0 K 10.67 | 11.18 0 25 50 75 100 125 150 175 200 To , TEMPERATURE? C)MJ15023 , MJ15025 PNP | ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS |Coliector-Emitter Sustaining Voltage(1) MJ15023 Vv 200 | Vv (ig= 100 mA, 1,= 0) MJ15025 250 | Collector Cutoff Current loex | wa (Vee= 200 V , Vegiom= 1.5 V) MJ15023 250 (Vce= 250 V, Vegiom= 1-5 V) MJ15025 | 250 |Collector Cutoff Current lcEo | uA (Weg= 150 V, 1,= 0) MJ15023 500 (Vog= 200 V, 1,= 0) MJ15025 500 |Emitter Cutoff Current | lego 500 | uA | (Vep= 5.0 V, 1,= 0) | ON CHARACTERISTICS (1) DC Current Gain hFE (1g= 8.0 A, Veg= 4.0 V) 15 | 60 (Ie= 16. A, Vog= 4.0 V) 5.0 | Collector-Emitter Saturation Voltage Veeteay | v | (1g =8.0A, lp= 0.8 A) 140 (p= 16 A, 1,= 3.2 A) 4.0 Base-Emitter On Voltage Vig{on) Vv (1g =8.0A, Vog= 4.0V) 2.2 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (2) | (lg= 1.0 A, Veg= 10 V, f= 1.0 MHz) 4.0 {Output Capacitance Cob pF 1 ( Vog 10 V, I= 0, f= 1.0 MHz) 600 (1) Pulse Test: Pulse width = 300 us , Duty Cycle < 2.0% (2) t= [tye] fae MHzMJ15023,MJ15025 PNP a nn A FIG-2 DC CURRENT GAIN FIG-3 "ON" VOLTAGE T=100C = T228C s $ B a E 3 a = ww g 8 Tyn28 % Vee@Voe*4V_ e > Ba Vv ee) 25C Vceeai@lets T=100C 4 0 02 03 05 4 2 5 7 10 20 02 03 05 07 1.0 20 3.0 50 7.0 10 20 lc , COLLECTOR CURRENT (AMP) IC , COLLECTOR CURRENT (AMP) FIG-4 CAPACITANCES FIG-S CURRENT GAIN- BANDWIDTH PRODUCT 4k T.#28C = Voe=10V 2k 3 f rest 21 MHz 2 +k 3 it i oO 2 Zz o < Ww E g we 5 A o E 5 20 g 2 100 FE og 0.1 0.2 0.5 1.0 20 5.0 10 IC , COLLECTOR CURRENT (AMP) 40 1.0 2.0 5.0 10 20 50 100 300 Vr, REVERSE VOLTAGE(VOLTS) FIG-6 ACTIVE-REGION SAFE OPERATING AREA There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate = Ie-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-6 is base on Typiq=200 C:T is vari- able depending on conditions.At high case temperatures , thermal limitation will reduce the power that can be handied to values less than the limitations imposed by second - Bonding Wire Limit breakdown. Thermaly Limited (Single -Second Breakdown Limited le, COLLECTOR CURRENT (Amp) 1 2 10 20 50 100 200 500 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS)