SCH2808 Ordering number : ENN8360 SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features * * * Composite type with an N-channel sillicon MOSFET (SCH1412) and a schottky barrier diode (SS0503) contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * 4V drive. [SBD] * Short reverse recovery time. * Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS 20 V ID 1.4 A IDP PD Allowable Power Dissipation 30 V PW10s, duty cycle1% 5.6 A Mounted on a ceramic board (900mm20.8mm) 1unit 0.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +125 C VRRM VRSM 30 V 30 V Average Output Current IO 0.5 A Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 3 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 C Storage Temperature Tstg --55 to +125 C Marking : QH Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62005PE MS IM TB-00001448 No.8360-1/6 SCH2808 Electrical Characteristics at Ta=25C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V VDS=30V, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=16V, VDS=0V yfs RDS(on)1 VDS=10V, ID=700mA Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 30 VDS=10V, ID=1mA V 1 A 10 A 2.6 V 230 300 m 400 560 m 1.2 0.66 ID=700mA, VGS=10V ID=400mA, VGS=4V 1.1 S RDS(on)2 Ciss VDS=10V, f=1MHz 65 pF Output Capacitance Coss VDS=10V, f=1MHz 14 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 8 pF Turn-ON Delay Time td(on) See specified Test Circuit. 5.0 ns Rise Time tr td(off) See specified Test Circuit. 4.0 ns See specified Test Circuit. 11 ns tf See specified Test Circuit. 3.0 ns Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.4A 2.5 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.4A 0.6 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=1.4A 0.3 Diode Forward Voltage VSD IS=1.4A, VGS=0V nC 0.87 1.2 V 0.42 0.47 V 120 A [SBD] Reverse Voltage VR Forward Voltage VF IR=0.5mA IF=0.5A Reverse Current Interterminal Capacitance IR C VR=15V VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions 30 V 13 pF 10 ns Electrical Connection unit : mm 7028-003 6 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain 1 2 3 Top view 1.6 0.2 1.5 2 3 0.5 0.56 1 0.25 0.05 1.6 0.05 0.2 6 5 4 1 : Gate 2 : Source 3 : Anode 4 : Cathode 5 : Drain 6 : Drain SANYO : SCH6 No.8360-2/6 SCH2808 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=15V Duty10% D 100mA 50 VOUT 100 10 100mA ID=700mA RL=21.4 VIN 10s PW=10s D.C.1% 10mA VIN 10V 0V --5V G trr SCH2808 50 S ID -- VDS [MOSFET] 25C 7 25 5C C 1.4 VDS=10V Ta= -- V 10 8V 1.2 4V 1.5 Drain Current, ID -- A 1.0 VGS=3V 0.8 0.6 0.4 75 0.5 1.0 Ta = Drain Current, ID -- A ID -- VGS [MOSFET] 6V 5V 2.0 C --25 C P.G 0 25 C 0.2 0 0 0.2 0.4 0.6 0.8 0 1.0 Drain-to-Source Voltage, VDS -- V IT03294 [MOSFET] RDS(on) -- VGS 800 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Gate-to-Source Voltage, VGS -- V IT03295 [MOSFET] RDS(on) -- Ta 800 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 700 600 500 ID=0.4A 0.7A 400 300 200 100 0 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT03296 700 600 =4V , VGS 500 0.4A I D= 400 =10V , VGS 300 .7A I D=0 200 100 0 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT03297 No.8360-3/6 SCH2808 yfs -- ID [MOSFET] 2 7 75 = Ta 5 C 5C --2 3 2 1.0 7 5 3 2 0.1 7 5 Ta=75 C 25C --25C C 5 1.0 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 0.2 [MOSFET] VDD=15V VGS=10V 3 0.4 0.6 0.8 1.0 1.2 1.4 Diode Forward Voltage, VSD -- V IT03299 Ciss, Coss, Crss -- VDS [MOSFET] IT03298 SW Time -- ID 5 100 f=1MHz Ciss 7 5 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns VGS=0V 2 Drain Current, ID -- A td(off) 10 7 td(on) 5 tr 3 tf 2 3 2 Coss 10 Crss 7 5 1.0 3 5 7 2 0.1 3 5 7 2 1.0 Drain Current, ID -- A 3 0 10 7 5 3 2 3 2 2.5 Total Gate Charge, Qg -- nC IT03302 PD -- Ta 0.8 m s 0m s Operation in this area is limited by RDS(on). 0.1 7 5 ) C 2.0 10 10 25 1.5 s s a= (T 1.0 ID=1.4A n 0.5 0 1m io 0 <10s 1.0 7 5 3 2 30 10 at er 2 25 IDP=5.6A op 4 20 C 6 15 D Drain Current, ID -- A 8 10 Drain-to-Source Voltage, VDS -- V IT03301 [MOSFET] ASO [MOSFET] VDS=10V ID=1.4A 0 5 IT03300 VGS -- Qg 10 Gate-to-Source Voltage, VGS -- V [MOSFET] 3 2 0.1 0.01 Allowable Power Dissipation, PD -- W IS -- VSD 5 VDS=10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 3 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT09716 [MOSFET] M 0.6 ou nte do na ce ram 0.4 ic bo ard (9 00 mm 0.2 2 0 .8m m) 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT09717 No.8360-4/6 SCH2808 IF -- VF 1.0 [SBD] 7 Reverse Current, IR -- A 2 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 PF(AV) -- IO 0.35 0.6 [SBD] C 100C 75C 1000 7 5 3 2 50C 100 7 5 3 2 25C 10 7 5 3 2 1.0 0 5 10 15 20 25 [SBD] IT07928 C -- VR 100 [SBD] f=1MHz Rectangular wave (1) 0.30 7 (2) (4) (3) 360 0.25 Sine wave 0.20 180 360 0.15 0.10 (1) Rectangular wave =60 (2) Rectangular wave =120 (3) Rectangular wave =180 (4) Sine wave =180 0.05 0 0 0.1 0.2 0.3 0.4 0.5 Average Output Current, IO -- A IFSM -- t 3.5 30 Reverse Voltage, VR -- V IT07927 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W Forward Voltage, VF -- V Surge Forward Current, IFSM(Peak) -- A 5 Ta=12 10000 7 5 3 2 3 Ta= 125 C 100 C 75C 50C 25C Forward Current, IF -- A 5 IR -- VR 100000 7 5 3 2 0.6 IT08187 5 3 2 10 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 7 IT07891 [SBD] Current waveform 50Hz sine wave 3.0 IS 20ms t 2.5 2.0 1.5 1.0 0.5 0 7 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 ID00338 No.8360-5/6 SCH2808 Note on usage : Since the SCH2808 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice. PS No.8360-6/6