2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-1367 (Z) 1st. Edition Mar. 2001 Features * High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, D = 45 %min. (f = 836.5MHz) * Compact package capable of surface mounting Outline UPAK 2 1 3 D 4 1. Gate 2. Source 3. Drain 4. Source G S This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested. 2SK2596 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 17 V Gate to source voltage VGSS 10 V Drain current ID 0.4 A 1 A Drain peak current I D(pulse)* 1 2 Channel dissipation Pch* 3 W Channel temperature Tch 150 C Storage temperature Tstg -45 to +150 C Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Electrical Characteristics (Ta = 25C) Item Symbol Min. Typ Max. Unit Test Conditions Zero gate voltage drain current I DSS -- -- 10 A VDS = 12 V, VGS = 0 Gate to source leak current I GSS -- -- 5.0 A VGS = 10V, VDS = 0 Gate to source cutoff voltage VGS(off) 0.4 -- 1.1 V I D = 2mA, VDS = 12V Input capacitance Ciss -- 22 -- pF VGS = 5V, VDS = 0 f = 1MHz Output capacitance Coss -- 10.5 -- pF VDS = 12V, VGS = 0 f = 1MHz Output Power Pout 30.2 31.46 -- dBm VDS = 12V f = 836.5MHz Pin = 18dBm Drain Rational D 45 55 -- % VDS = 12V Pout = 30.2dBm f = 836.5MHz Pin = 18dBm 2 2SK2596 Main Characteristics Typical Output Characteristics 3.0 4 Pulse test V 8V I D (A) 2.5 3 6V 2.0 5V 1.5 2 4V 1.0 1 3V 0.5 V GS = 2 V 0 50 100 150 Case Temperature 0 200 0.6 Tc = -25C 25C 75C 0.4 4 6 8 10 1.0 0.5 Forward Transfer Admittance vs. Drain Current Tc = -25C 25C 0.2 0.1 75C 0.05 0.2 0 Forward Transfer Admittance |y fs | (S) (A) ID 1.0 0.8 2 Drain to Source Voltage V DS (V) Tc (C) Typical Transfer Characteristics Drain Current 10 Drain Current Channel Power Dissipation Pch (W) Maximum Channel Power Dissipation Curve V DS = 12 V Pulse Test 1 2 3 Gate to Source Voltage 4 V GS (V) 0.02 5 V DS = 12 V Pulse Test 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 Drain Current I D (A) 3 2SK2596 Gate to Source Cutoff Voltage vs. Ambient Temperature 10 1.2 5 Gate to Source Cutoff Voltage VGS(off) (V) Drain to Source Saturation Voltage VDS(sat) (V) Drain to Source Saturation Voltage vs. Drain Current 25C 2 Tc = -25C 1 0.5 75C 0.2 0.1 0.05 V DS = 12 V Pulse Test 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 10 mA 0.8 0.6 ID= 0.4 0.2 V DS = 12 V 0 -25 1 0 Input Capacitance vs. Gate to Source Voltage 75 100 125 100 Output Capacitance Coss (pF) Input Capacitance Ciss (pF) 50 Output Capacitance vs. Drain to Source Voltage 24 22 20 18 16 V DS = 0 f = 1 MHz -6 -2 2 6 Gate to Source Voltage VGS (V) 4 25 Ambient Temperature Ta (C) Drain Current I D (A) 14 -10 1 mA 0.1 m A 10 50 20 10 5 2 V GS = 0 f = 1 MHz 1 0.1 0.2 0.5 1 2 5 Drain to Source V DS (V) 10 20 Output Power, Drain Rational vs. Input Power 100 50 20 10 5 2 100 2.5 V GS = 0 f = 1 MHz 1 0.1 0.2 0.5 1 2 5 10 Gate to Source Voltege VGS (V) 20 V DS = 12 V I DO = 100 mA 2.0 f = 836.5MHz 80 Po 1.5 D Drain Rational D (%) Reverse Transfer Capacitance vs. Gate to Source Votage Output Power Po (W) Reverse Transfer Capacitance Crss (pF) 2SK2596 60 1.0 40 0.5 20 0 20 40 60 80 0 100 Input power Pin (W) 5 2SK2596 Package Dimensions As of January, 2001 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Mass (reference value) 6 (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 0.1 0.44 Max 2.5 0.1 4.25 Max 1 0.8 Min 1.8 Max 0.4 4.5 0.1 UPAK -- Conforms 0.050 g 2SK2596 Cautions 1. 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