CMLD2004G CMLD2004A
CMLD2004C CMLD2004S
CMLD2004DO
SURFACE MOUNT SILICON
DUAL, HIGH VOLTAGE
SWITCHING DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD2004G series
contains two (2) silicon high voltage switching diodes,
manufactured by the epitaxial planar process, epoxy
molded in an SOT-563 surface mount package,
designed for applications requiring high voltage
capability.
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Continuous Reverse Voltage VR 240 V
Peak Repetitive Reverse Voltage VRRM 300 V
Peak Repetitive Reverse Current IO 200 mA
Continuous Forward Current IF 225 mA
Peak Repetitive Forward Current IFRM 625 mA
Peak Forward Surge Current, tp=1.0μs IFSM 4.0 A
Peak Forward Surge Current, tp=1.0s IFSM 1.0 A
Power Dissipation PD 250 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 500 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR V
R=240V 100 nA
IR V
R=240V, TA=150°C 100 μA
BVR I
R=100μA 300 V
VF I
F=100mA 1.0 V
CJ V
R=0, f=1.0MHz 5.0 pF
trr I
F=IR=30mA, Irr=3.0mA, RL=100Ω 50 ns
The following configurations are available:
CMLD2004G DUAL, ISOLATED MARKING CODE: DG
CMLD2004A DUAL, COMMON ANODE MARKING CODE: 04A or 4A
CMLD2004C DUAL, COMMON CATHODE MARKING CODE: 04C
CMLD2004S DUAL, IN SERIES MARKING CODE: 04S
CMLD2004DO DUAL, ISOLATED OPPOSING MARKING CODE: 04O
SOT-563 CASE
R8 (21-March 2016)
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