X02xxxA
January 1995
SENSITIVE GATE SCR
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180°conductionangle) Tl= 60°C 1.25 A
IT(AV) Mean on-statecurrent
(180°conductionangle) Tl= 60°C 0.8 A
ITSM Non repetitivesurge peak on-statecurrent
(Tjinitial= 25°C) tp =8.3 ms 25 A
tp =10 ms 22.5
I2tI2t Value for fusing tp =10 ms 2.5 A2s
dI/dt Critical rate of rise of on-state current
IG=10mA di
G/dt =0.1A/µs. 30 A/µs
Tstg
TjStorageand operatingjunctiontemperaturerange - 40, +150
- 40, +125 °C
Tl Maximum lead temperaturefor soldering during 10sat
2mm from case 260 °C
ABSOLUTE RATINGS (limitingvalues)
TO92
(Plastic)
IT(RMS) =1.25A
VDRM = 200V to 800V
Low IGT <200 µA
FEATURES
Symbol Parameter Voltage Unit
BDMN
V
DRM
VRRM Repetitivepeak off-statevoltage
Tj=125°CR
GK =1KΩ200 400 600 800 V
The X02xxxA series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applicationswherelow gate sensitivityis required.
DESCRIPTION
K
GA
1/5
PG (AV)= 0.2W PGM = 3 W (tp = 20 µs) IGM =1.2 A (tp =20 µs)
GATE CHARACTERISTICS (maximumvalues)
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 150 °C/W
Rth(j-l) Junctionto leadsfor DC 60 °C/W
THERMAL RESISTANCES
Symbol TestConditions Sensitivity Unit
02 03 05
IGT VD=12V (DC) RL=140ΩTj= 25°C MIN 20 20 µA
MAX 200 200 50
VGT VD=12V (DC) RL=140ΩTj= 25°C MAX 0.8 V
VGD VD=VDRM RL=3.3kΩ
RGK =1KΩTj= 125°C MIN 0.1 V
VRGM IRG =10µA Tj= 25°C MIN 8 V
tgd VD=VDRM ITM=3xI
T(AV)
dIG/dt = 0.1A/µsI
G
= 10mA Tj= 25°C TYP 0.5 µs
IHIT= 50mA RGK =1KΩTj= 25°C MAX 5 mA
ILIG=1mA RGK =1KΩTj= 25°C MAX 6 mA
VTM ITM= 2.5A tp= 380µsTj= 25°C MAX 1.45 V
IDRM
IRRM VD=VDRM RGK =1KΩ
V
R=VRRM Tj= 25°C MAX 5 µA
Tj= 110°C MAX 200 µA
dV/dt VD=67%VDRM RGK =1KΩTj= 110°C TYP 15 20 15 V/µs
tq ITM=3xI
T(AV)V
R
=35V
dI/dt=10A/µs tp=100µs
dV/dt=2V/µs
VD= 67%VDRM RGK =1KΩ
Tj= 110°C MAX 100 µs
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
X0203MA
SCRTOP GLASS
CURRENT
PACKAGE:
A =TO92
VOLTAGE
SENSITIVITY
X02xxxA
2/5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2P (W)
360 O
= 180o
= 120o
=90
o
=60
o
=30
o
DC
I (A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus averageon-statecurrent.
0 10 20 30 40 50 60 70 80 90 100 110 120 130
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4I (A)
T(AV)
= 180o
DC
Tlead ( C)
o
Fig.3 : Averageon-state current versus lead tem-
perature.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25 C]
oIh[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5: Relative variationof gatetriggercurrent and
holding current versus junction temperature.
0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0.8
1.0
1.2 -50
-70
-90
-110
P (W) Tlead ( C)
o
Tamb ( C)
o
Rth(j-l)
Rth(j-a)
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb andTlead).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00 Zth(j-a)/Rth(j-a)
tp(s)
Fig.4 : Relative variation of thermal impedance
junctionto ambient versus pulse duration.
1 10 100 1000
0
5
10
15
20
25 Tj initial = 25 C
o
Number of cycles
I (A)
TSM
Fig.6 : Non repetitivesurge peak on-state current
versusnumber of cycles.
X02xxxA
3/5
110
1
10
100 I (A). I2t(A
2s)
TSM
Tj initial = 25 C
o
ITSM
tp(ms)
I2t
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidalpulse with width : tp ≤10ms, and
correspondingvalue ofI2t.
00.511.522.533.544.5
0.1
1
10
100 I (A)
TM
Tj initial
25 C
o
Tj max
V (V)
TM
Tj max
Vto =1.05V
Rt =0.150
Fig.8 : On-statecharacteristics(maximum values).
X02xxxA
4/5
PACKAGE MECHANICAL DATA
TO92 (Plastic)
DF
a
E
B
A
C
REF. DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
A 1.35 0.053
B 4.7 0.185
C 2.54 0.100
D 4.4 4.8 0.173 0.189
E 12.7 0.500
F 3.7 0.146
a 0.45 0.017
Marking: Typenumber
Weight : 0.2 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patentsor other rights of third parties which may result from its use. No
license is granted by implication or otherwise under anypatent or patent rightsof SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized foruse as critical components inlife support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995SGS-THOMSON Microelectronics - All rights reserved.
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X02xxxA
5/5
