MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Mar. 2009
2
RMS on-state current
Average on-state current
Surge on-state current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Unit
Symbol
VRRM
VRSM
VDRM
VDSM
V(LTDS)
Parameter
V
V
V
V
V
Voltage class
6500
6500
6500
6500
3600
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Long term DC stability voltage
MAXIMUM RATINGS
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
GCT PART
Conditions
—
—
Gate driver energized
Gate driver energized
Gate driver energized, λ = 100 Fit
520
330
4.8
9.6 × 104
1000
5
17
100
120
10
21
500
800
Applied for all condition angles
f = 60Hz, sinewave θ = 180°, Tf = 62°C
VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH
Tj = 25/125°C (See Fig. 1, 3)
VD = 3000V, IT = 800A, CS = 0.1µF, RS = 10Ω
Tj = 25/125°C, f = 60Hz (See Fig. 1, 2)
IT = 800A, VR = 3000V, Tj = 25/125°C
CS = 0.1µF, R S = 10Ω (See Fig. 4, 5)
One half cycle at 60Hz, Tj = 125°C start
Ratings
A
A
kA
A2s
A/µs
kW
kW
W
W
V
V
A
A
IT(RMS)
IT(AV)
ITSM
I2t
diR/dt
PFGM
PRGM
PFG(AV)
PRG(AV)
VFGM
VRGM
IFGM
IRGM
Symbol Parameter Conditions
ITQRM Repetitive controllable
on-state current 800
Unit
A
diT/dtCritical rate of rise of on-state
current 1000 A/µs
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state
voltage
Turn-on time
Turn-on delay time
Turn-on switching energy
Storage time
Turn-off switching energy
Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
—
—
—
—
3000
—
—
—
—
—
—
—
—
—
VTM
IRRM
IDRM
IGRM
dv/dt
tgt
td
Eon
ts
Eoff
QRR
Erec
IGT
VGT
V
mA
mA
mA
V/µs
µs
µs
J/P
µs
J/P
µ
C
J/P
A
V
ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Limits
Min Typ Max Unit
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.5
250
100
40
—
5
1
0.6
3
2.3
1800
4.4
0.5
1.5
IT = 400A, Tj = 125°C
VRM = 6500V, Tj = 125°C
VDM = 6500V, Tj = 125°C, Gata driver energized
VRG = 21V, Tj = 125°C
VD = 3000V, Tj = 125°C
Gate driver energized (Expo. wave)
IT = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C
CS = 0.1µF, R S = 10Ω(See Fig. 1, 2)
IT = 400A, VD = 3000V, di/dt = 1000A/µs
CS = 0.1µF, RS = 10Ω, Tj = 125°C(See Fig. 1, 2)
IT = 800A, VDM = 3/4 VDRM, VD = 3000V
CS = 0.1µF, RS = 10Ω, Tj = 125°C(See Fig. 1, 5)
IT = 400A, VDM = 4000V, VD = 3000V
CS = 0.1µF, RS = 10Ω, Tj = 125°C(See Fig. 1, 5)
VR = 3000V, IT = 400A, di/dt = 1000A/µs
CS = 0.1µF, RS = 10Ω, Tj = 125°C (See Fig. 4, 5)
VD = 24V, RL = 0.1Ω, Tj = 25°C
DC method
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