MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
GCU08BA-130
OUTLINE DRAWING Dimensions in mm
APPLICATION
Current source inverters, DC choppers, Induction heaters, DC to DC converter
20V POWER SUPPLY INPUT
(MSTB2.5/2-G-5.08AU)
FAULT SIGNAL OUTPUT (HFBR-1521)
FIBER OPTIC INPUT (HFBR-2521)
LED4 : POWER SUPPLY OK (GREEN)
LED3 : G-K OK (GREEN)
LED2 : GATE ON (YELLOW)
LED1 : GATE OFF (RED)
GATE TEST POINT
CATHODE TEST POINT
A PART MAGNIFICATION
φ
3.5
±
0.2
2.2
±
0.2 DEPTH
φ
3.5
±0.2
2.2
±0.2 DEPTH
9
20
37
5
13.7
20
10
1.6
37
A
20MAX
160
80
2-6×M4
2-6×M4
208
165
80
250
85
46.5
46.5
48
48
160
120
160
104
140
120
K
G
K
K
G
K
G
K
G
K
G
G
φ
47±0.2 6±0.5
6±0.5
6±0.5 6±0.5
14.5±1.3
26.2±0.3 80±0.5
10.1±0.9
φ
47
±0.2
LED3
LED4
LED1
LED2
TPG
TPK
OE1
OE2
CAPTIV SCREW
(DEPTH OF THE SCREW INTO
THE HEATSINK : 6 ~ 8mm)
Symmetrical GCT unit
GCT and gate driver are connected
ITQRM:
Repetitive controllable on-state current
........ 800A
IT(AV): Average on-state current ..................... 330A
VDRM: Repetitive peak off-state voltage ....... 6500V
VRRM: Repetitive peak reverse voltage ........ 6500V
Tj: Operation junction temperature ......... 125°C
Mar. 2009
http://store.iiic.cc/
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Mar. 2009
2
RMS on-state current
Average on-state current
Surge on-state current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak reverse gate current
Unit
Symbol
VRRM
VRSM
VDRM
VDSM
V(LTDS)
Parameter
V
V
V
V
V
Voltage class
6500
6500
6500
6500
3600
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Long term DC stability voltage
MAXIMUM RATINGS
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
GCT PART
Conditions
Gate driver energized
Gate driver energized
Gate driver energized, λ = 100 Fit
520
330
4.8
9.6 × 104
1000
5
17
100
120
10
21
500
800
Applied for all condition angles
f = 60Hz, sinewave θ = 180°, Tf = 62°C
VDM = 3/4 VDRM, VD = 3000V, LC = 0.3µH
Tj = 25/125°C (See Fig. 1, 3)
VD = 3000V, IT = 800A, CS = 0.1µF, RS = 10
Tj = 25/125°C, f = 60Hz (See Fig. 1, 2)
IT = 800A, VR = 3000V, Tj = 25/125°C
CS = 0.1µF, R S = 10 (See Fig. 4, 5)
One half cycle at 60Hz, Tj = 125°C start
Ratings
A
A
kA
A2s
A/µs
kW
kW
W
W
V
V
A
A
IT(RMS)
IT(AV)
ITSM
I2t
diR/dt
PFGM
PRGM
PFG(AV)
PRG(AV)
VFGM
VRGM
IFGM
IRGM
Symbol Parameter Conditions
ITQRM Repetitive controllable
on-state current 800
Unit
A
diT/dtCritical rate of rise of on-state
current 1000 A/µs
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state
voltage
Turn-on time
Turn-on delay time
Turn-on switching energy
Storage time
Turn-off switching energy
Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
3000
VTM
IRRM
IDRM
IGRM
dv/dt
tgt
td
Eon
ts
Eoff
QRR
Erec
IGT
VGT
V
mA
mA
mA
V/µs
µs
µs
J/P
µs
J/P
µ
C
J/P
A
V
ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions Limits
Min Typ Max Unit
5.5
250
100
40
5
1
0.6
3
2.3
1800
4.4
0.5
1.5
IT = 400A, Tj = 125°C
VRM = 6500V, Tj = 125°C
VDM = 6500V, Tj = 125°C, Gata driver energized
VRG = 21V, Tj = 125°C
VD = 3000V, Tj = 125°C
Gate driver energized (Expo. wave)
IT = 800A, VD = 3000V, di/dt = 1000A/µs, Tj = 125°C
CS = 0.1µF, R S = 10(See Fig. 1, 2)
IT = 400A, VD = 3000V, di/dt = 1000A/µs
CS = 0.1µF, RS = 10Ω, Tj = 125°C(See Fig. 1, 2)
IT = 800A, VDM = 3/4 VDRM, VD = 3000V
CS = 0.1µF, RS = 10, Tj = 125°C(See Fig. 1, 5)
IT = 400A, VDM = 4000V, VD = 3000V
CS = 0.1µF, RS = 10, Tj = 125°C(See Fig. 1, 5)
VR = 3000V, IT = 400A, di/dt = 1000A/µs
CS = 0.1µF, RS = 10, Tj = 125°C (See Fig. 4, 5)
VD = 24V, RL = 0.1, Tj = 25°C
DC method
http://store.iiic.cc/
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Mar. 2009
3
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Power supply voltage
Gate power consumption
Delay time of on gate current
Delay time of off gate current
Control signal
Power supply connector
Status signal
DC power supply
IT = 420Arms, f = 780Hz, duty = 0.33
Ta = 25°C
Ta = 25°C
Optical fiber data link
Transmitter : HFBR-1521 : Agilent
Receiver : HFBR-2521 : Agilent
Phoenix contact
Type name : MSTB2.5/2-G-5.08AU
VGIN
PGIN
tfd
trd
19
V
W
µs
µs
GATE DRIVER PART
Symbol Parameter Conditions Limits
Min Typ Max Unit
20
21
35
3.0
3.0
(Note 1)
Mounting force
Weight
Pole piece diameter (GTC device)
Housing thickness (GTC device)
±0.2mm
±0.5mm
FM
kN
g
mm
mm
Symbol Parameter Conditions Limits
Min
11.1
Typ
13
1100
47
26
Max
15.8
Unit
MECHANICAL DATA
Junction operating temperature
Storage temperature
Ambient operation temperature
Thermal resistance
Recommend : 40°C
Junction to Fin
Tj
Tstg
Ta
Rt(j-f)
°C
°C
°C
K/W
Symbol Parameter Conditions Limits
Min
–10
–10
–10
Typ
Max
125
60
60
0.025
Unit
THERMAL DATA
http://store.iiic.cc/
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Mar. 2009
4
Fig. 1 Turn-on and Turn-off waveform
Fig. 2 Turn-on test circuit Fig. 3 Turn-off test circuit
(With clamp circuit)
Fig. 5 Turn-off and Reverse recovery test circuit
Fig. 4 Reverse recovery waveform
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
td ; 0VRG ~ 0.9VD
tgt ; 0VRG ~ 0.1VD
ts ; 0VRG ~ 0.9IT
diG/dt ; 0.1IGM ~ 0.9IGM
tw ; 0VRG ~ 0.9IGM
diGQ/dt ; 0.1IRG ~ 0.9IRG
tfd ; 50% on signal ~ 0VRG
trd ; 50% off signal ~ 0VRG
Integration area for Eoff ; 5%VD ~ until 100µs
VD
VRG
IGM
ts
VRG
ITVD
diGQ/dt
diG/dt
IGQ
IG
tgt
td
tfd trd
Control signal
tw
t(Eoff) = 100µs
DUT
L
V
D
Rs
Cs
Rc
L (load) FWDi
DUT CDi
Cc
V
D
Lc
ANL
0
90%I
RM
V
RM
t
rr
I
T
50%I
RM
V
R
Q
RR
= (t
rr
×I
RM
)/2
Integration area for E
rec
; 0I
T
~ until 100µs
[]
d
i
/d
t
(0 ~ 50%I
RM
)
t(E
rec
) = 100µs
50%I
T
Cs
Cs
L (load)
DUT
DUT
VD
Rs
Rs
ANL
http://store.iiic.cc/
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Mar. 2009
5
Note 1. Status signal
1. Status signal from LED
(1) Status signal
Status of GCT
On state
Off state
LED 1
(Red)
LED 2
(Yellow)
OFF
ON
ON
OFF
2. Status signal from Transmitter (L : Light NL : No light)
Control signal
(GDU input)
Status signal
(GDU output)
Control signal
(Control board)
NL
L
L
L
NL
NL
Control signal
(GDU input)
Status signal
(GDU output)
Control signal
(Control board)
L
Normal
Fault
L
NL
L
L
NL
NL
Control signal
(GDU input)
Status signal
(GDU output)
Control signal
(Control board)
L
NL
Normal Fault
L
NL
L
NL
(Always No light)
(Always light)
L
L
NL
NL
Control signal
(GDU input)
Status signal
(GDU output)
Control signal
(Control board)
(1) Normal operation
(3) Fault signal (G-K short)
(2) Fault signal (O/V or U/V)
(4) Fault signal (fiber optic)
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
20±1V
Voltage down
20±1V
Voltage down
Normal
Normal
G-K short
G-K short
Normal
Fault
Fault
Fault
PS LED (LED 4)
(Green)
G-K LED (LED 3)
(Green)
(2) Fault signal
Status G-K Power Supply
On
Off
Off
Off
On
Off
On
Off
http://store.iiic.cc/
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
Mar. 2009
6
PERFORMANCE CURVES
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
GCU08BA-130
HIGH POWER INVERTER USE
PRESS PACK TYPE
8
7
6
00
5
4
3
2
1
200 400 600 800 1000
CONDITION
V
D
=3000V, V
DM
=V
D
+2.34×I
T
Tj=125°C, Cs=0.1µF
Rs=10
MAXIMUM ON-STATE CHARACTERISTIC
ON-STATE CURRENT IT (A)
ON-STATE VOLTAGE VTM (V)
TURN OFF SWITCHING ENERGY Eoff (J/P)
TURN OFF CURRENT IT (A)
Eoff VS IT (Max)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
Zth (K/W)
TIME (S)
0
0.03
0.035
0.02
0.025
0.015
0.005
0.01
012345678910
Tj=125°C
Tj=25°C
REVERSE RECOVERY ENERGY Erec (J/P)
ON-STATE CURRENT IT (A)
Erec VS IT (Max)
10
9
00
8
7
6
5
4
3
2
1
200 400 600 800 1000
CONDITION
V
R
=3000V, Tj=125°C
di/dt=1000A/µs
Cs=0.1µF, Rs=10
TURN ON SWITCHING ENERGY Eon (J/P)
TURN ON CURRENT IT (A)
Eon VS IT (Max)
1.4
10000
1.2
1.0
0.6
0.8
0.2
0.4
0.0 800600400200
CONDITION
V
D
=3000V, Tj=125°C
di/dt=1000A/µs
Cs=0.1µF, Rs=10
10–2 10–1
2357
100
2357
101
2357
10–3
2357
5
3
10
1
2
7
5
3
2
7
5
3
2
7
10
4
10
2
10
3
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