ES1A
THRU
ES1M
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ) (High Profile)
Features
• For Surface Mount Applications
• Extremely Low Thermal Resistance
• Easy Pick And Place
• High Temp Soldering: 250°C for 10 Seconds At Terminals
• Superfast Recovery Times For High Efficiency
Maximum Ratings
0.090”
0.085”
SUGGESTED SOLDER
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current IF(AV) 1.0A TJ = 75°C
Peak Forward Surge
Current IFSM 30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage VFIFM = 1.0A;
TJ = 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR5µA
100µATJ = 25°C
TJ = 100°C
Typical Junction
Capacitance CJ45pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
• Operating Temperature: -50°C to +150°C
• Storage Temperature: -50°C to +150°C
• Maximum Thermal Resistance; 15°C/W Junction To Lead
MCC
Catalog
Number
Device
Marking Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
ES1M ES1M 1000V 700V 1000V
ES1A ES1A 50V 35V 50V
ES1B ES1B 100V 70V 100V
ES1C ES1C 150V 105V 150V
ES1D ES1D 200V 140V 200V
ES1G ES1G 400V 280V 400V
ES1J ES1J 600V 420V 600V
ES1K ES1K 800V 560V 800V
Maximum Reverse
Recovery Time Trr IF=0.5A, IR=1.0A,
Irr=0.25A
www.mccsemi.com
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .078 .116 1.98 2.95
B .067 .089 1.70 2.25
C .002 .008 .05 .20
D --- .02 --- .51
E .035 .055 .89 1.40
F .065 .096 1.65 2.45
G .205 .224 5.21 5.69
H .160 .180 4.06 4.57
J .100 .112 2.57 2.84
H
J
E
F
G
A
B
D
C
Cathode Band
ES1A-D 50ns
ES1G-K 60ns
ES1M 100ns
ES1A-D .975V
ES1G-K 1.35V
ES1M 1.60V
omponents
21201 Itasca Street Chatsworth
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MCC