SOT-23 Plastic-Encapsulate Transistors Ti 203 MMBT4403LT1 TRANSISTOR (PNP) 1.BASE 2.EMITTER 3.COLLECTOR J 3 7 1.0 UNIT: mm we eee Pom: 0.3 W (Tamb=25T ) Icm: -0.6A tolfector-base voltage VierjcBo:-40V Baggies a8 Gperating and storage junction temperature range Tu, Tstg :-55C to+150C ELECTRICAL CHARACTERISTICS (Tamp=25C_ unless otherwise specified) Drain-source Breakdown Voltage V(BR}CBO Ic=-100n A, lE=0 -40 Collector Emitter Breakdown Voltage V(BR)CEO Ic=-1mA,1B=0 -40 V Emitter-base Breakdown Voltage V(BR)EBO fe=-100n A,Ic=0 -5 Collector Cut-off Current ne Van Ba co se nA Emitter cut-off current lEBO VeB=-4V,Ic=0 -0.4 HA DC Current Gain HFe VceE=-2V,Ic=-150mA 100 300 Collector-emitter Saturation Voltage VcEsat Ic=-150mA,1B=-15mA -0.4 Vv Bsse -emitter Voltage VBEsat Ic=-150mA,lB=-15mA -0.95 Vv Transition Frequency ft rome eo 200 MHz DEVICE MARKING : MMBT4403LT1:2T hee, NORMALIZED CURRENT GAIN Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) Typical Characteristics Static Characteristics 04 02 03 05 07 10 2.0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 VOLTAGE (VOLTS) 0.102 0.5 Ty = 125C 3.0 5.0 7.0 10 Ic, COLLECTOR CURRENT (mA} DC Current Gain 02 03 O5 O07 1.0 Ip, BASE CURRENT (mA) 20 2.0 Collector Saturation Region VBE(sat) @ Ic/Ip = 10 VBE(sat) @ VcE = 10 V V @ Icilg = 10 30 MMBT4403LT1 50 70 100 200 3.0 5.0 7.0 10 20 1020 50 10 20 50 100 200 500 I, COLLECTOR CURRENT (mA) On" Voltages 300 30 500 50 204