T4-LDS-0168, Rev. 3 (120776) ©2012 Microsemi Corporation Page 1 of 5
1N5807, 1N5 80 9 an d 1N5811
Available on
commercial
versions
VOID-LESS HERM E TICALL Y SEALE D ULTRAFAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
Quali f i ed Lev els:
JAN, JAN TX,
JANTX V and JANS
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers
with working peak reverse voltages from 50 to 150 v olts ar e h er m eti c al ly s e aled w i t h v o i d -less glass
construction using an internal “Category 1” metallurgical bond. These devices are available in both
leaded and surface mount MELF package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
“B” Package
Also available in:
“B” MELF Package
(s urf ace mount)
1N5807, 09, 11US & URS
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5807, 1N5809, 1N5811 series.
• Void-l ess hermetically sealed glass pac kage.
• Quadruple-layer passi vation.
• Extremely robust c onstruction.
• Internal “Category 1” metallurgical bonds.
• JAN, JANTX, JANTXV and JANS qualifications are availble per MIL-PRF-19500/477.
• RoHS com pliant versions available (commercial grade only).
APPLICATIONS / BENE FITS
• Ultrafast recovery 6 amp rectifier series from 50 to 150 V.
• Military, space and other high-reliability applications.
• Switching power supplies or other applications requiring extremely fast switching & low forward
loss.
• High forward surge current capability.
• Low thermal resistance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi MicroNote 050.
MAXIMUM RAT INGS @ TA= 25 oC unless other wise spe cified
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Lead (L = .375 in) Fig. 1
RӨJL
22
oC/W
Thermal Resistance
RӨJX
52
oC/W
Working Peak Reverse Vol tage:
1N5807
1N5809
1N5811
VRWM
50
100
150
V
Forward Surge Current (3)
IFSM
125
A
Average Rectified Output Current
@ TL = +75
o
C at 3/8 inch lead length
(1)
IO1 6.0 A
Average Rectified Output-Current
@ TA = +55
o
C at 3/8 inch lead length
(2)
IO2 3.0 A
Capacitance @ VR = 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
CJ
60
pF
Reverse Recovery Time (4)
trr
30
ns
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. IO1 is rated at TL = 75 oC at 3/8 i nc h lead le ngt h. D er ate at 60 mA/oC for TL above 75 oC.
2. IO2 is derated at 25 mA/ºC above TA = 55 oC for PC boards where thermal r esistance from m ounting
po int to ambie nt i s s uffi ciently co nt ro lled w here TJ(max) 175 oC is not exc eeded.
3. TA = 25 oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals.
4. IF = 1.0 A, IRM = 1.0 A, IR(REC) = .0.10 A and di/dt = 100 A/µs min.
T4-LDS-0168, Rev. 3 (120776) ©2012 Microsemi Corporation Page 2 of 5
1N5807, 1N5 80 9 an d 1N5811
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed voidless hard glass with tung sten slug s.
• TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate ov er copper.
• MARKING: Body coated in blue with part number.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
• WEIGHT: 750 milligrams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N5807 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
(See Electric al Characteristics
table)
SYMBOL S & DEFI NITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibi t at a spec ified current.
VRWM
Working Peak Reverse Vol tage: The maximum peak voltage that can be applied over the operating temperature
range.
IO
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and
a 180 degree conducti on angle.
VF
Maximum Forward Voltage: The maximum forward voltage the devi ce will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
trr
Reverse Recovery Time: The time i nterval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs.
ELECTRI CAL CHARACTERISTICS @
TA
= 25 º C unles s otherwise stated
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
µ
A
V(BR)
MAXIMUM FORWARD
VOLTAGE
@ 4 A (8 .3 ms pulse )
VFM
REVERSE
CURRENT
(MAX.)
@ VRWM
IR
SURGE
CURRENT
(MAX)
IFSM
(Note 1)
REVERSE
RECOVERY
T IME ( MAX)
trr
(Note 2)
TYPE
Volts
Volts
µA
Amps ns
25 oC
125 oC
25 oC
125 oC
1N5807
60
0.875
0.800
5
525
125
30
1N5809
110
0.875
0.800
5
525
125
30
1N5811
160
0.875
0.800
5
525
125
30
NOTES: 1. TA = 25 oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals.
2. IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min.
T4-LDS-0168, Rev. 3 (120776) ©2012 Microsemi Corporation Page 3 of 5
1N5807, 1N5 80 9 an d 1N5811
GRAPHS
Heating Time (sec)
FIGURE 1
Max i mum Th er mal Imped anc e
IO (A)
FIGURE 2
Rectifier Power vs IO (Average Forward Current)
Theta (oC/W)
P
O
(W)
T4-LDS-0168, Rev. 3 (120776) ©2012 Microsemi Corporation Page 4 of 5
1N5807, 1N5 80 9 an d 1N5811
GRAPHS (continued)
P ad Area per P ad (sq in)
FIGURE 3
Thermal Resistance vs FR4 Pad Area At Ambient
PCB horizontal ( for each pad) with 1, 2, and 3 oz copper
VF (V)
FIGURE 4
Forward Volt age vs Forward Current
I
F
(V)
Thermal Resistance (oC/W)
T4-LDS-0168, Rev. 3 (120776) ©2012 Microsemi Corporation Page 5 of 5
1N5807, 1N5 80 9 an d 1N5811
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Di mens ion BL sha ll include the entire body including slugs and
sections of the lead over w hich the diameter is uncontrolled. This
uncontrolled area is defined as the zone between the edge of the
diode body and extending .050 inch (1.27 m m) onto the leads.
4. Di mens ion BD shall be me asured at the largest diameter.
5. In accordance with ASME Y14.5M, diam eters are equivalent to Φx
symbology.
DIMENSIONS
Ltr
INCH
MILLIMETERS
Notes
Min
Max
Min
Max
BD
.115
.142
2.92
3.61
4
BL
.130
.300
3.30
7.62
3
LD
0.036
.042
0.91
1.07
3
LL
.900
1.30
22.86
33.02
Lead Tolerance = +.002 - .003 in.
(Includes sections of the lead or fillet over which the lead diameter is uncontrolled.)