1N5807, 1N5809 and 1N5811 Available on commercial versions VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/477 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal "Category 1" metallurgical bond. These devices are available in both leaded and surface mount MELF package configurations. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * * * * * * * JEDEC registered 1N5807, 1N5809, 1N5811 series. Void-less hermetically sealed glass package. Quadruple-layer passivation. Extremely robust construction. Internal "Category 1" metallurgical bonds. JAN, JANTX, JANTXV and JANS qualifications are availble per MIL-PRF-19500/477. RoHS compliant versions available (commercial grade only). "B" Package APPLICATIONS / BENEFITS * * * * * * * Ultrafast recovery 6 amp rectifier series from 50 to 150 V. Military, space and other high-reliability applications. Switching power supplies or other applications requiring extremely fast switching & low forward loss. High forward surge current capability. Low thermal resistance. Controlled avalanche with peak reverse power capability. Inherently radiation hard as described in Microsemi MicroNote 050. Also available in: "B" MELF Package (surface mount) 1N5807, 09, 11US & URS MAXIMUM RATINGS @ TA = 25 oC unless otherwise specified Parameters/Test Conditions Junction and Storage Temperature Thermal Resistance Junction-to-Lead (L = .375 in) Fig. 1 Thermal Resistance 1N5807 Working Peak Reverse Voltage: 1N5809 1N5811 (3) Forward Surge Current Average Rectified Output Current o (1) @ TL = +75 C at 3/8 inch lead length Average Rectified Output-Current o (2) @ TA = +55 C at 3/8 inch lead length Capacitance @ V R = 10 V, f = 1 MHz; Vsig = 50 mV (p-p) (4) Reverse Recovery Time Solder Temperature @ 10 s Symbol Value TJ and TSTG R JL R JX V RWM I FSM I O1 -65 to +175 22 52 50 100 150 125 6.0 Unit I O2 3.0 A CJ t rr TSP 60 30 260 pF ns o C o C C/W o C/W V o A A Notes: 1. I O1 is rated at T L = 75 oC at 3/8 inch lead length. Derate at 60 mA/oC for T L above 75 oC. o 2. I O2 is derated at 25 mA/C above T A = 55 C for PC boards where thermal resistance from mounting o point to ambient is sufficiently controlled where T J(max) 175 C is not exceeded. 3. T A = 25 oC @ I O = 3.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals. 4. I F = 1.0 A, I RM = 1.0 A, I R(REC) = .0.10 A and di/dt = 100 A/s min. T4-LDS-0168, Rev. 3 (120776) (c)2012 Microsemi Corporation MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 5 1N5807, 1N5809 and 1N5811 MECHANICAL and PACKAGING * * * * * * * CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper. MARKING: Body coated in blue with part number. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 750 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5807 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol V BR V RWM IO VF IR C t rr Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs. ELECTRICAL CHARACTERISTICS @ TA = 25 C unless otherwise stated BREAKDOWN VOLTAGE (MIN.) @ 100 A V (BR) MAXIMUM FORWARD VOLTAGE @ 4 A (8.3 ms pulse) V FM TYPE 1N5807 1N5809 1N5811 Volts Volts 60 110 160 25 oC 0.875 0.875 0.875 125 oC 0.800 0.800 0.800 REVERSE CURRENT (MAX.) @ V RWM IR A 25 oC 125 oC 5 525 5 525 5 525 SURGE CURRENT (MAX) REVERSE RECOVERY TIME (MAX) I FSM t rr (Note 1) (Note 2) Amps 125 125 125 ns 30 30 30 NOTES: 1. T A = 25 oC @ I O = 3.0 A and V RWM for ten 8.3 ms surges at 1 minute intervals. 2. I F = 1.0 A, I RM = 1.0 A, I R(REC) = 0.10 A and di/dt = 100 A/s min. T4-LDS-0168, Rev. 3 (120776) (c)2012 Microsemi Corporation Page 2 of 5 1N5807, 1N5809 and 1N5811 Theta (oC/W) GRAPHS Heating Time (sec) PO (W) FIGURE 1 Maximum Thermal Impedance I O (A) FIGURE 2 Rectifier Power vs I O (Average Forward Current) T4-LDS-0168, Rev. 3 (120776) (c)2012 Microsemi Corporation Page 3 of 5 1N5807, 1N5809 and 1N5811 Thermal Resistance (oC/W) GRAPHS (continued) Pad Area per Pad (sq in) FIGURE 3 Thermal Resistance vs FR4 Pad Area At Ambient IF (V) PCB horizontal (for each pad) with 1, 2, and 3 oz copper V F (V) FIGURE 4 Forward Voltage vs Forward Current T4-LDS-0168, Rev. 3 (120776) (c)2012 Microsemi Corporation Page 4 of 5 1N5807, 1N5809 and 1N5811 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension BL shall include the entire body including slugs and sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 4. Dimension BD shall be measured at the largest diameter. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Ltr BD BL LD LL DIMENSIONS INCH MILLIMETERS Min Max Min Max .115 .142 2.92 3.61 .130 .300 3.30 7.62 0.036 .042 0.91 1.07 .900 1.30 22.86 33.02 Notes 4 3 3 Lead Tolerance = +.002 - .003 in. (Includes sections of the lead or fillet over which the lead diameter is uncontrolled.) T4-LDS-0168, Rev. 3 (120776) (c)2012 Microsemi Corporation Page 5 of 5