2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01 www.vishay.com
7-1
N-Channel JFET
PRODUCT SUMMARY
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
v –8 –25 2 2
FEATURES BENEFITS APPLICATIONS
DExcellent High-Frequency Gain:
Gps 11 dB @ 400 MHz
DVery Low Noise: 3 dB @ 400 MHz
DVery Low Distortion
DHigh ac/dc Switch Off-Isolation
DHigh Gain: AV = 60 @ 100 mA
DWideband High Gain
DVery High System Sensitivity
DHigh Quality of Amplification
DHigh-Speed Switching Capability
DHigh Low-Level Signal Amplification
DHigh-Frequency Amplifier/Mixer
DOscillator
DSample-and-Hold
DVery Low Capacitance Switches
DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
1
TO-226AA
(TO-92)
Top View
S
D
G2
3
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
2N3819
Vishay Siliconix
www.vishay.com
7-2 Document Number: 70238
S–04028—Rev. D ,04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min TypaMax Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA , VDS = 0 V –25 –35
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 2 nA –3 –8V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 2 10 20 mA
VGS = –15 V, VDS = 0 V –0.002 –2 nA
Gate Reverse Current IGSS TA = 100_C–0.002 –2mA
Gate Operating CurrentcIGVDG = 10 V, ID = 1 mA –20
Drain Cutoff Current ID(off) VDS = 10 V, VGS = –8 V 2pA
Drain-Source On-Resistance rDS(on) VGS = 0 V, ID = 1 mA 150 W
Gate-Source Voltage VGS VDS = 15 V, ID = 200 mA–0.5 –2.5 –7.5
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
f = 1 kHz 2 5.5 6.5
Common-Source Forward T ransconductancecgfs VDS = 15 V
V = 0 V f = 100 MHz 1.6 5.5 mS
Common-Source Output Conductancecgos VGS = 0 V f = 1 kHz 25 50 mS
Common-Source Input Capacitance Ciss 2.2 8
Common-Source Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 0.7 4 pF
Equivalent Input Noise VoltagecenVDS = 10 V, VGS = 0 V, f = 100 Hz 6nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NH
b. Pulse test: PW v300 ms, duty cycle v2%.
c. This parameter not registered with JEDEC.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
500
0–10–6
300
0
100
60
0
rDS gos
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
20
0–10
0
10
0
IDSS
gfs
VGS(off) – Gate-Source Cutoff Voltage (V)
80
40
20
400
100
200
–2–4–8
VGS(off) – Gate-Source Cutoff Voltage (V)
6
8
4
2
–6–2–4–8
12
16
4
8
IDSS @ VDS = 15 V, VGS = 0 V
gfs @ VDS = 15 V, VGS = 0 V
f = 1 kHz
gos – Output Conductance (mS)
IDSS – Saturation Drain Current (mA)
rDS(on) – Drain-Source On-Resistance ( Ω )
gfs – Forward Transconductance (mS)
2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01 www.vishay.com
7-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
0
2
8
6
4
Gate Leakage Current
01020
5 mA
0.1 mA
100 nA
10 nA
1 nA
100 pA
10 pA
1 pA
0.1 pA
0.1 mA
IGSS @ 25_C
TA = 25_C
TA = 125_C
5 mA
IGSS @
125_C
Output Characteristics Output Characteristics
Common-Source Forward Transconductance
vs. Drain Current
0.1 1 10
10
2
0
VGS(off) = –3 V
TA = –55_C
125_C
10
04 10
0
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.2 V
–1.0 V
VGS = 0 V
15
010
0
–0.6 V
–0.9 V
–1.2 V
–1.5 V
–1.8 V
VGS = 0 V
–0.3 V
VDG – Drain-Gate Voltage (V) ID – Drain Current (mA)
VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Transfer Characteristics
VGS(off) = –2 V
TA = –55_C
125_C
VGS – Gate-Source Voltage (V)
Transfer Characteristics
TA = –55_C
125_C
VGS(off) = –3 V
8
6
4
VDS = 10 V
f = 1 kHz
VGS(off) = –2 V VGS(off) = –3 V
2
8
6
4
268 4268
3
12
9
6
VDS = 10 V VDS = 10 V
10
0
2
8
6
4
0–0.8 –20 –3–0.4 –1.2 –1.6 –1.2–0.6 –1.8 –2.4
1 mA
1 mA
25_C
25_C25_C
–1.4 V
gfs – Forward Transconductance (mS)
IG – Gate Leakage
ID – Drain Current (mA)
ID – Drain Current (mA)ID – Drain Current (mA)
ID – Drain Current (mA)
2N3819
Vishay Siliconix
www.vishay.com
7-4 Document Number: 70238
S–04028—Rev. D ,04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
10
0–0.8 –2
8
0
VGS(off) = –2 V
TA = –55_C
125_C
VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltgage
10
–3–0.60
0
TA = –55_C
125_C
VGS(off) = –3 V
ID – Drain Current (mA) ID – Drain Current (mA)
On-Resistance vs. Drain Current Circuit Voltage Gain vs. Drain Current
0.1 1 10
300
0
TA = –55_C
–3 V
VGS(off) = –2 V
100.1
100
0
Assume VDD = 15 V, VDS = 5 V
RL+10 V
ID
VGS(off) = –2 V
–3 V
Common-Source Input Capacitance
vs. Gate-Source Voltage Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
0–20–4
0
f = 1 MHz
VDS = 0 V
VDS = 10 V
3.0
0–20
0
VDS = 0 V
VDS = 10 V
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
f = 1 MHz
VDS = 10 V
f = 1 kHz VDS = 10 V
f = 1 kHz
6
4
2
240
180
120
60
8
6
4
2
80
60
40
20
1
–0.4 –1.6–1.2 –1.2 –1.8 –2.4
4
3
2
1
–8–12 –16 –4–8–12 –16
2.4
1.8
1.2
0.6
AV+
gfs RL
1)RLgos
25_C25_C
gfs – Forward Transconductance (mS)
gfs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance ( Ω )
AV – Voltage Gain
Ciss – Input Capacitance (pF)
Crss – Reverse Feedback Capacitance (pF)
2N3819
Vishay Siliconix
Document Number: 70238
S–04028—Rev. D ,04-Jun-01 www.vishay.com
7-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance Output Admittance
Input Admittance Forward Admittance
100
10
1
0.1
100 1000
bis
gis
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
(mS)
100
10
1
0.1100
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
(mS)
–bis
gfs
10
1
0.1
0.01
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source –brs
–grs
10
1
0.1
0.01
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source bos
gos
f – Frequency (MHz) f – Frequency (MHz)
f – Frequency (MHz)f – Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
10 100 1 k 100 k10 k
20
0
ID = 5 mA
VDS = 10 V 20
00.1 1 10
TA = –55_C
125_C
VGS(off) = –3 V
ID – Drain Current (mA)f – Frequency (Hz)
(mS)
(mS)
200 500 1000200 500
100 1000 100200 500 1000200 500
VDS = 10 V
f = 1 kHz
VGS(off) = –3 V
16
12
8
4
16
12
8
4
ID = IDSS
25_C
en – Noise Voltage nV / Hz
gos – Output Conductance (mS)
