© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 4
1Publication Order Number:
BAV70TT1/D
BAV70TT1G,
NSVBAV70TT1G,
NSVBAV70TT3G
Dual Switching Diode
Features
•AEC−Q101 Qualified and PPAP Capable
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Reverse Voltage VR70 Vdc
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
RJA 555 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
PD
360
2.9
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RJA 345 °C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
Device Package Shipping†
ORDERING INFORMATION
CASE 463
SOT−416/SC−75
STYLE 3
3
2
1
3
CATHODE
ANODE
1
2
ANODE
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAV70TT1G SOT−416
(Pb-Free)
3000 / Tape &
Reel
A4 MG
G
1
A4 = Specific Device Code
M= Date Code
G= Pb−Free Package
MARKING
DIAGRAM
NSVBAV70TT1G SOT−416
(Pb-Free)
3000 / Tape &
Reel
NSVBAV70TT3G SOT−416
(Pb-Free)
10000 / Tape &
Reel
BAV70TT1G, NSVBAV70TT1G, NSVBAV70TT3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 Adc)
V(BR) 70 −Vdc
Reverse Voltage Leakage Current (Note 3)
(VR = 70 Vdc)
(VR = 50 Vdc)
IR
IR
−
−
5.0
100
Adc
nAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CD−1.5 pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1)
trr −6.0 ns
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
VRF −1.75 V
3. For each individual diode while the second diode is unbiased.
BAV70TT1G, NSVBAV70TT1G, NSVBAV70TT3G
http://onsemi.com
3
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2.
RS = 50
BAV70
IF
SAMPLING
OSCILLOSCOPE
RL = 50
trtp
I
10%
90%
VR
INPUT PULSE
+IFtrr OUTPUT PULSE
10%OF VR
100
RS = 50
BAV70 SAMPLING
OSCILLOSCOPE
RL = 50
1 K450
90%
10%
t
trtp
INPUT PULSE
V
VFR
OUTPUT PULSE t
I
BAV70TT1G, NSVBAV70TT1G, NSVBAV70TT3G
http://onsemi.com
4
100
0.2 0.4
VF, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
TA = 85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
1.0
0
VR, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
CD, DIODE CAPACITANCE (pF)
2468
IF, FORWARD CURRENT (mA)
Figure 3. Forward Voltage Figure 4. Leakage Current
Figure 5. Capacitance
TA = -40°C
TA = 25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
TA = 25°C
IR, REVERSE CURRENT (μA)
Figure 6. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
BAV70TT1G, NSVBAV70TT1G, NSVBAV70TT3G
http://onsemi.com
5
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81−3−5817−1050
BAV70TT1/D
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