BAV70TT1G, NSVBAV70TT1G, NSVBAV70TT3G Dual Switching Diode Features http://onsemi.com * AEC-Q101 Qualified and PPAP Capable * NSV Prefix for Automotive and Other Applications Requiring * Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ANODE 1 3 CATHODE 2 ANODE MARKING DIAGRAM MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol Max Unit VR 70 Vdc IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/C 555 C/W THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (Note 1) TA = 25C Derated above 25C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation, FR-4 Board (Note 2) TA = 25C Derated above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range October, 2011 - Rev. 4 2 1 CASE 463 SOT-416/SC-75 STYLE 3 PD RJA PD 360 mW 2.9 mW/C RJA 345 C/W TJ, Tstg -55 to +150 C 1 A4 MG G 1 A4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 Inch Pad (c) Semiconductor Components Industries, LLC, 2011 3 M G = Specific Device Code = Date Code = Pb-Free Package ORDERING INFORMATION Device Package Shipping BAV70TT1G SOT-416 (Pb-Free) 3000 / Tape & Reel NSVBAV70TT1G SOT-416 (Pb-Free) 3000 / Tape & Reel NSVBAV70TT3G SOT-416 (Pb-Free) 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAV70TT1/D BAV70TT1G, NSVBAV70TT1G, NSVBAV70TT3G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 - Vdc IR IR - - 5.0 100 Adc nAdc Diode Capacitance (VR = 0, f = 1.0 MHz) CD - 1.5 pF Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF - - - - 715 855 1000 1250 Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) trr - 6.0 ns VRF - 1.75 V OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (Note 3) (VR = 70 Vdc) (VR = 50 Vdc) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) (Figure 2) 3. For each individual diode while the second diode is unbiased. http://onsemi.com 2 mVdc BAV70TT1G, NSVBAV70TT1G, NSVBAV70TT3G BAV70 RS = 50 SAMPLING OSCILLOSCOPE RL = 50 IF tr tp I 10% +IF trr 10%OF 90% VR OUTPUT PULSE INPUT PULSE Figure 1. Recovery Time Equivalent Test Circuit 450 1 K RS = 50 SAMPLING OSCILLOSCOPE RL = 50 BAV70 I V 90% VFR 10% t tr tp INPUT PULSE Figure 2. http://onsemi.com 3 OUTPUT PULSE t VR 100 BAV70TT1G, NSVBAV70TT1G, NSVBAV70TT3G 10 100 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) TA = 150C 10 TA = 85C TA = 25C 1.0 TA = -40C TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 0 1.2 10 Figure 3. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 Figure 4. Leakage Current CD, DIODE CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 2 0 4 6 8 VR, REVERSE VOLTAGE (VOLTS) r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 5. Capacitance 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 6. Normalized Thermal Response http://onsemi.com 4 10 100 1000 BAV70TT1G, NSVBAV70TT1G, NSVBAV70TT3G PACKAGE DIMENSIONS SC-75/SOT-416 CASE 463-01 ISSUE F -E- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 2 3 b 3 PL 0.20 (0.008) e -D- DIM A A1 b C D E e L HE 1 M D HE C 0.20 (0.008) E INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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