Kinetis KL17 Microcontroller
48 MHz ARM® Cortex®-M0+ and 128/256 KB Flash
The KL17 series is optimized for cost-sensitive and battery-
powered applications requiring low-power general-purpose
connectivity. The product offers:
• Embedded ROM with boot loader for flexible program
upgrade
• High accuracy internal voltage and clock reference
• FlexIO to support any standard and customized serial
peripheral emulation
• Down to 54uA/MHz in very low power run mode and
1.96uA in deep sleep mode (RAM + RTC retained)
Core Processor
• ARM® Cortex®-M0+ core up to 48 MHz
Memories
• 128/256 KB program flash memory
• 32 KB SRAM
• 16 KB ROM with build-in bootloader
• 32-byte backup register
System
• 4-channel asynchronous DMA controller
• Watchdog
• Low-leakage wakeup unit
• Two-pin Serial Wire Debug (SWD) programming and
debug interface
• Micro Trace Buffer
• Bit manipulation engine
• Interrupt controller
Clocks
• 48MHz high accuracy (up to 0.5%) internal reference
clock
• 8MHz/2MHz high accuracy (up to 3%) internal
reference clock
• 1KHz reference clock active under all low-power
modes (except VLLS0)
• 32–40KHz and 3–32MHz crystal oscillator
Peripherals
• One UART module supporting ISO7816, operating
up to 1.5 Mbit/s
• Two low-power UART modules supporting
asynchronous operation in low-power modes
• Two I2C modules and I2C0 supporting up to 1
Mbit/s
• Two 16-bit SPI modules supporting up to 24 Mbit/s
• One FlexIO module supporting emulation of
additional UART, IrDA, SPI, I2C, I2S, PWM and
other serial modules, etc.
• One serial audio interface I2S
• One 16-bit 818 ksps ADC module with high
accuracy internal voltage reference (Vref) and up to
16 channels
• High-speed analog comparator containing a 6-bit
DAC for programmable reference input
• One 12-bit DAC
• 1.2 V internal voltage reference
Timers
• One 6-channel Timer/PWM module
• Two 2-channel Timer/PWM modules
• One low-power timer
• Periodic interrupt timer
• Real time clock
MKL17Z128Vxx4
MKL17Z256Vxx4
MKL17Z256CAL4R
32 and 48 QFN
5x5 mm P 0.5 mm 7x7
mm P 0.5 mm
36 WLCSP
2.8x2.7 mm P 0.4 mm
64 LQFP
10x10 mm P 0.5 mm
64 BGA
5x5 mm P 0.5 mm
Freescale Semiconductor, Inc. KL17P64M48SF6
Data Sheet: Technical Data Rev. 6, 02/2016
© 2014–2016 Freescale Semiconductor, Inc. All rights reserved.
Document Number:
Operating Characteristics
• Voltage range: 1.71 to 3.6 V
• Flash write voltage range: 1.71 to 3.6 V
• Temperature range: –40 to 85 °C for WLCSP package
and –40 to 105 °C for other packages
Packages
• 64 LQFP 10mm x 10mm, 0.5mm pitch, 1.6mm
thickness
• 64 MAPBGA 5mm x 5mm, 0.5mm pitch, 1.23mm
thickness
• 48 QFN 7mm x 7mm, 0.5mm pitch, 0.65mm thickness
• 32 QFN 5mm x 5mm, 0.5mm pitch, 0.65mm thickness
• 36 WLCSP 2.8mm x 2.7mm, 0.4mm pitch, 0.6mm
thickness
Security and Integrity
• 80-bit unique identification number per chip
• Advanced flash security
I/O
• Up to 54 general-purpose input/output pins (GPIO)
and 6 high-drive pad
Low Power
• Down to 54uA/MHz in very low power run mode
• Down to 1.96uA in VLLS3 mode (RAM + RTC
retained)
• Six flexible static modes
Ordering Information
Product Memory Package IO and ADC channel
Part number Marking (Line1/
Line2)
Flash
(KB)
SRAM
(KB)
Pin
count
Package GPIOs GPIOs
(INT/HD)1ADC
channels
(SE/DP)
MKL17Z128VFM4 M17P7V 128 32 32 QFN 28 19/6 11/2
MKL17Z256VFM4 M17P8V 256 32 32 QFN 28 19/6 11/2
MKL17Z128VFT4 M17P7V 128 32 48 QFN 40 24/6 18/3
MKL17Z256VFT4 M17P8V 256 32 48 QFN 40 24/6 18/3
MKL17Z128VLH4 MKL17Z128V//LH4 128 32 64 LQFP 54 31/6 20/4
MKL17Z256VLH4 MKL17Z256V//LH4 256 32 64 LQFP 54 31/6 20/4
MKL17Z128VMP4 M17P7V 128 32 64 MAPBGA 54 31/6 20/4
MKL17Z256VMP4 M17P8V 256 32 64 MAPBGA 54 31/6 20/4
MKL17Z256CAL4R MKL17Z256CAL4 256 32 36 WLCSP 26 23/6 7/0
1. INT: interrupt pin numbers; HD: high drive pin numbers
Related Resources
Type Description Resource
Selector
Guide
The Freescale Solution Advisor is a web-based tool that features
interactive application wizards and a dynamic product selector.
Solution Advisor
Product Brief The Product Brief contains concise overview/summary information to
enable quick evaluation of a device for design suitability.
KL1XPB1
Reference
Manual
The Reference Manual contains a comprehensive description of the
structure and function (operation) of a device.
KL17P64M48SF6RM1
Data Sheet The Data Sheet includes electrical characteristics and signal
connections.
This document.
Chip Errata The chip mask set Errata provides additional or corrective information for
a particular device mask set.
KINETIS_L_1N71K1
Table continues on the next page...
2Kinetis KL17 Microcontroller, Rev. 6, 02/2016
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Related Resources (continued)
Type Description Resource
Package
drawing
Package dimensions are provided in package drawings. 64-LQFP: 98ASS23234W1 64-
MAPBGA: 98ASA00420D, 132-
QFN: 98ASA00615D1 48-QFN:
98ASA00616D, 136-WLCSP:
98ASA00949D1
1. To find the associated resource, go to http://www.nxp.com and perform a search using this term.
Kinetis KL17 Microcontroller, Rev. 6, 02/2016 3
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Table of Contents
1 Ratings....................................................................................5
1.1 Thermal handling ratings................................................. 5
1.2 Moisture handling ratings................................................ 5
1.3 ESD handling ratings.......................................................5
1.4 Voltage and current operating ratings............................. 5
2 General................................................................................... 6
2.1 AC electrical characteristics.............................................6
2.2 Nonswitching electrical specifications..............................6
2.2.1 Voltage and current operating requirements....... 7
2.2.2 LVD and POR operating requirements................7
2.2.3 Voltage and current operating behaviors.............8
2.2.4 Power mode transition operating behaviors........ 9
2.2.5 Power consumption operating behaviors............ 10
2.2.6 EMC radiated emissions operating behaviors.....20
2.2.7 Designing with radiated emissions in mind..........21
2.2.8 Capacitance attributes.........................................21
2.3 Switching specifications...................................................21
2.3.1 Device clock specifications..................................21
2.3.2 General switching specifications......................... 22
2.4 Thermal specifications.....................................................22
2.4.1 Thermal operating requirements......................... 22
2.4.2 Thermal attributes................................................23
3 Peripheral operating requirements and behaviors.................. 24
3.1 Core modules.................................................................. 24
3.1.1 SWD electricals .................................................. 24
3.2 System modules.............................................................. 25
3.3 Clock modules................................................................. 25
3.3.1 MCG-Lite specifications.......................................25
3.3.2 Oscillator electrical specifications........................27
3.4 Memories and memory interfaces................................... 29
3.4.1 Flash electrical specifications..............................29
3.5 Security and integrity modules........................................ 31
3.6 Analog............................................................................. 31
3.6.1 ADC electrical specifications............................... 31
3.6.2 Voltage reference electrical specifications.......... 36
3.6.3 CMP and 6-bit DAC electrical specifications....... 37
3.6.4 12-bit DAC electrical characteristics....................39
3.7 Timers..............................................................................42
3.8 Communication interfaces............................................... 42
3.8.1 SPI switching specifications................................ 42
3.8.2 I2C.......................................................................47
3.8.3 UART...................................................................48
3.8.4 I2S/SAI switching specifications..........................49
4 Dimensions............................................................................. 53
4.1 Obtaining package dimensions....................................... 53
5 Pinouts and Packaging........................................................... 54
5.1 KL17 signal multiplexing and pin assignments................54
5.2 KL17 Family Pinouts........................................................57
5.3 Recommended connection for unused analog and
digital pins........................................................................61
6 Ordering parts......................................................................... 62
6.1 Determining valid orderable parts....................................62
7 Part identification.....................................................................62
7.1 Description.......................................................................62
7.2 Format............................................................................. 63
7.3 Fields............................................................................... 63
7.4 Example...........................................................................63
8 Terminology and guidelines.................................................... 64
8.1 Definitions........................................................................64
8.2 Examples.........................................................................64
8.3 Typical-value conditions.................................................. 65
8.4 Relationship between ratings and operating
requirements....................................................................65
8.5 Guidelines for ratings and operating requirements..........66
9 Revision History...................................................................... 66
4Kinetis KL17 Microcontroller, Rev. 6, 02/2016
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1 Ratings
1.1 Thermal handling ratings
Table 1. Thermal handling ratings
Symbol Description Min. Max. Unit Notes
TSTG Storage temperature –55 150 °C 1
TSDR Solder temperature, lead-free — 260 °C 2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.2 Moisture handling ratings
Table 2. Moisture handling ratings
Symbol Description Min. Max. Unit Notes
MSL Moisture sensitivity level — 3 — 1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
1.3 ESD handling ratings
Table 3. ESD handling ratings
Symbol Description Min. Max. Unit Notes
VHBM Electrostatic discharge voltage, human body model –2000 +2000 V 1
VCDM Electrostatic discharge voltage, charged-device
model
–500 +500 V 2
ILAT Latch-up current at ambient temperature of 105 °C –100 +100 mA 3
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human
Body Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
Ratings
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1.4 Voltage and current operating ratings
Table 4. Voltage and current operating ratings
Symbol Description Min. Max. Unit
VDD Digital supply voltage –0.3 3.8 V
IDD Digital supply current — 120 mA
VIO IO pin input voltage –0.3 VDD + 0.3 V
IDInstantaneous maximum current single pin limit (applies to
all port pins)
–25 25 mA
VDDA Analog supply voltage VDD – 0.3 VDD + 0.3 V
2 General
2.1 AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
80%
20%
50%
VIL
Input Signal
VIH
Fall Time
High
Low
Rise Time
Midpoint1
The midpoint is VIL + (VIH - VIL) / 2
Figure 1. Input signal measurement reference
All digital I/O switching characteristics, unless otherwise specified, assume that the
output pins have the following characteristics.
• CL=30 pF loads
• Slew rate disabled
• Normal drive strength
2.2 Nonswitching electrical specifications
General
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2.2.1 Voltage and current operating requirements
Table 5. Voltage and current operating requirements
Symbol Description Min. Max. Unit Notes
VDD Supply voltage 1.71 3.6 V
VDDA Analog supply voltage 1.71 3.6 V
VDD – VDDA VDD-to-VDDA differential voltage –0.1 0.1 V
VSS – VSSA VSS-to-VSSA differential voltage –0.1 0.1 V
VIH Input high voltage
• 2.7 V ≤ VDD ≤ 3.6 V
• 1.7 V ≤ VDD ≤ 2.7 V
0.7 × VDD
0.75 × VDD
—
—
V
V
VIL Input low voltage
• 2.7 V ≤ VDD ≤ 3.6 V
• 1.7 V ≤ VDD ≤ 2.7 V
—
—
0.35 × VDD
0.3 × VDD
V
V
VHYS Input hysteresis 0.06 × VDD — V
IICIO IO pin negative DC injection current — single pin
• VIN < VSS-0.3V -3 — mA
1
IICcont Contiguous pin DC injection current —regional limit,
includes sum of negative injection currents of 16
contiguous pins
• Negative current injection -25 — mA
VODPU Open drain pullup voltage level VDD VDD V2
VRAM VDD voltage required to retain RAM 1.2 — V
1. All I/O pins are internally clamped to VSS through a ESD protection diode. There is no diode connection to VDD. If VIN
greater than VIO_MIN (= VSS-0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If
this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting
resistor is calculated as R = (VIO_MIN - VIN)/|IICIO|.
2. Open drain outputs must be pulled to VDD.
2.2.2 LVD and POR operating requirements
Table 6. VDD supply LVD and POR operating requirements
Symbol Description Min. Typ. Max. Unit Notes
VPOR Falling VDD POR detect voltage 0.8 1.1 1.5 V —
VLVDH Falling low-voltage detect threshold — high
range (LVDV = 01)
2.48 2.56 2.64 V —
Low-voltage warning thresholds — high range 1
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Table 6. VDD supply LVD and POR operating requirements (continued)
Symbol Description Min. Typ. Max. Unit Notes
VLVW1H
VLVW2H
VLVW3H
VLVW4H
• Level 1 falling (LVWV = 00)
• Level 2 falling (LVWV = 01)
• Level 3 falling (LVWV = 10)
• Level 4 falling (LVWV = 11)
2.62
2.72
2.82
2.92
2.70
2.80
2.90
3.00
2.78
2.88
2.98
3.08
V
V
V
V
VHYSH Low-voltage inhibit reset/recover hysteresis —
high range
— ±60 — mV —
VLVDL Falling low-voltage detect threshold — low
range (LVDV=00)
1.54 1.60 1.66 V —
VLVW1L
VLVW2L
VLVW3L
VLVW4L
Low-voltage warning thresholds — low range
• Level 1 falling (LVWV = 00)
• Level 2 falling (LVWV = 01)
• Level 3 falling (LVWV = 10)
• Level 4 falling (LVWV = 11)
1.74
1.84
1.94
2.04
1.80
1.90
2.00
2.10
1.86
1.96
2.06
2.16
V
V
V
V
1
VHYSL Low-voltage inhibit reset/recover hysteresis —
low range
— ±40 — mV —
VBG Bandgap voltage reference 0.97 1.00 1.03 V —
tLPO Internal low power oscillator period — factory
trimmed
900 1000 1100 μs —
1. Rising thresholds are falling threshold + hysteresis voltage
2.2.3 Voltage and current operating behaviors
Table 7. Voltage and current operating behaviors
Symbol Description Min. Max. Unit Notes
VOH Output high voltage — normal drive pad
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –5 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –1.5 mA
VDD – 0.5
VDD – 0.5
—
—
V
V
1
VOH Output high voltage — high drive pad
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –18 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –6 mA
VDD – 0.5
VDD – 0.5
—
—
V
V
1
IOHT Output high current total for all ports — 100 mA
VOL Output low voltage — normal drive pad
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 5 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 1.5 mA
—
—
0.5
0.5
V
V
1
VOL Output low voltage — high drive pad
—
0.5
V
1
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General
8Kinetis KL17 Microcontroller, Rev. 6, 02/2016
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Table 7. Voltage and current operating behaviors (continued)
Symbol Description Min. Max. Unit Notes
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 18 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 6 mA
— 0.5 V
IOLT Output low current total for all ports — 100 mA
IIN Input leakage current (per pin) for full temperature
range
— 1 μA 2
IIN Input leakage current (per pin) at 25 °C — 0.025 μA 2
IIN Input leakage current (total all pins) for full
temperature range
— 64 μA 2
IOZ Hi-Z (off-state) leakage current (per pin) — 1 μA
RPU Internal pullup resistors 20 50 kΩ 3
1. PTB0, PTB1, PTC3, PTC4, PTD6, and PTD7 I/O have both high drive and normal drive capability selected by the
associated PTx_PCRn[DSE] control bit. All other GPIOs are normal drive only.
2. Measured at VDD = 3.6 V
3. Measured at VDD supply voltage = VDD min and Vinput = VSS
2.2.4 Power mode transition operating behaviors
All specifications except tPOR and VLLSx→RUN recovery times in the following
table assume this clock configuration:
• CPU and system clocks = 48 MHz
• Bus and flash clock = 24 MHz
• HIRC clock mode
Table 8. Power mode transition operating behaviors
Symbol Description Min. Typ. Max. Unit Notes
tPOR After a POR event, amount of time from the
point VDD reaches 1.8 V to execution of the first
instruction across the operating temperature
range of the chip.
— — 300 μs 1
• VLLS0 → RUN
—
152
166
μs
• VLLS1 → RUN
—
152
166
μs
• VLLS3 → RUN
—
93
104
μs
• LLS → RUN
—
7.5
8
μs
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General
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Table 8. Power mode transition operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
• VLPS → RUN
—
7.5
8
μs
• STOP → RUN
—
7.5
8
μs
1. Normal boot (FTFA_FOPT[LPBOOT]=11)
2.2.5 Power consumption operating behaviors
The maximum values stated in the following table represent characterized results
equivalent to the mean plus three times the standard deviation (mean + 3 sigma).
NOTE
The while (1) test is executed with flash cache enabled.
NOTE
The data at 105 °C are for QFN, LQFP and MAPBGA
packages only.
Table 9. Power consumption operating behaviors
Symbol Description Min. Typ. Max. Unit Notes
IDDA Analog supply current — — See note mA 1
IDD_RUNCO Running CoreMark in flash in compute operation
mode—48M HIRC mode, 48 MHz core / 24 MHz
flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
5.76
6.04
6.40
6.68
mA
2
IDD_RUNCO Running While(1) loop in flash in compute
operation mode—48M HIRC mode, 48 MHz
core / 24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
3.21
3.49
3.85
4.13
mA
IDD_RUN Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable 48
MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
6.45
6.75
7.09
7.39
mA
2
IDD_RUN Run mode current—48M HIRC mode, running
CoreMark in flash all peripheral clock disable, 24
MHz core/12 MHz flash, VDD = 3.0 V
2
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General
10 Kinetis KL17 Microcontroller, Rev. 6, 02/2016
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Table 9. Power consumption operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
• at 25 °C
• at 105 °C
—
—
3.95
4.23
4.59
4.87
mA
IDD_RUN Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock disable 12
MHz core/6 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
2.68
2.96
3.32
3.60
mA
2
IDD_RUN Run mode current—48M HIRC mode, running
CoreMark in Flash all peripheral clock enable 48
MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
8.08
8.39
8.72
9.03
mA
2
IDD_RUN Run mode current—48M HIRC mode, running
While(1) loop in flash all peripheral clock disable,
48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
3.90
4.21
4.54
4.85
mA
IDD_RUN Run mode current—48M HIRC mode, running
While(1) loop in Flash all peripheral clock disable,
24 MHz core/12 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
2.66
2.94
3.30
3.58
mA
IDD_RUN Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock disable,
12 MHz core/6 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
2.03
2.31
2.67
2.95
mA
IDD_RUN Run mode current—48M HIRC mode, Running
While(1) loop in Flash all peripheral clock enable,
48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
5.52
5.83
6.16
6.47
mA
IDD_RUN Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
disable, 48 MHz core/24 MHz flash, VDD = 3.0 V
• at 25 °C
• at 105 °C
—
—
5.29
5.56
5.93
6.20
mA
IDD_RUN Run mode current—48M HIRC mode, running
While(1) loop in SRAM all peripheral clock
enable, 48 MHz core/24 MHz flash, VDD = 3.0 V
—
—
6.91
7.19
7.55
7.91
mA
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Table 9. Power consumption operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
• at 25 °C
• at 105 °C
IDD_VLPRCO Very Low Power Run Core Mark in Flash in
Compute Operation mode: Core@4MHz, Flash
@1MHz, VDD = 3.0 V
• at 25 °C
—
826
907
μA
IDD_VLPRCO Very-low-power-run While(1) loop in SRAM in
compute operation mode— 8 MHz LIRC mode, 4
MHz core / 1 MHz flash, VDD = 3.0 V
• at 25 °C
—
405
486
μA
IDD_VLPRCO Very-low-power run While(1) loop in SRAM in
compute operation mode:—2 MHz LIRC mode, 2
MHz core / 0.5 MHz flash, VDD = 3.0 V
• at 25 °C
—
154
235
μA
IDD_VLPR Very-low-power run mode current— 2 MHz LIRC
mode, While(1) loop in flash all peripheral clock
disable, 2 MHz core / 0.5 MHz flash, VDD = 3.0 V
• at 25 °C
—
108
189
μA
IDD_VLPR Very-low-power run mode current— 2 MHz LIRC
mode, While(1) loop in flash all peripheral clock
disable, 125 kHz core / 31.25 kHz flash, VDD =
3.0 V
• at 25 °C
—
39
120
μA
IDD_VLPR Very-low-power run mode current— 8 MHz LIRC
mode, While(1) loop in flash all peripheral clock
disable, 4 MHz core / 1 MHz flash, VDD = 3.0 V
• at 25 °C
—
249
330
μA
IDD_VLPR Very-low-power run mode current— 8 MHz LIRC
mode, While(1) loop in flash all peripheral clock
enable, 4 MHz core / 1 MHz flash, VDD = 3.0 V
• at 25 °C
—
337
418
μA
IDD_VLPR Very-low-power run mode current— 8 MHz LIRC
mode, While(1) loop in SRAM in all peripheral
clock disable, 4 MHz core / 1 MHz flash, VDD =
3.0 V
• at 25 °C
—
416
497
μA
IDD_VLPR Very-low-power run mode current— 8 MHz LIRC
mode, While(1) loop in SRAM all peripheral clock
enable, 4 MHz core / 1 MHz flash, VDD = 3.0 V
• at 25 °C
—
494
575
μA
IDD_VLPR Very-low-power run mode current—2 MHz LIRC
mode, While(1) loop in SRAM in all peripheral
clock disable, 2 MHz core / 0.5 MHz flash, VDD =
3.0 V
• at 25 °C
—
166
247
μA
IDD_VLPR Very-low-power run mode current—2 MHz LIRC
mode, While(1) loop in SRAM all peripheral clock
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Table 9. Power consumption operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
disable, 125 kHz core / 31.25 kHz flash, VDD =
3.0 V
• at 25 °C
— 50 131 μA
IDD_VLPR Very-low-power run mode current—2 MHz LIRC
mode, While(1) loop in SRAM all peripheral clock
enable, 2 MHz core / 0.5 MHz flash, VDD = 3.0 V
• at 25 °C
—
208
289
μA
IDD_WAIT Wait mode current—core disabled, 48 MHz
system/24 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
—
1.81
1.89
mA
IDD_WAIT Wait mode current—core disabled, 24 MHz
system/12 MHz bus, flash disabled (flash doze
enabled), all peripheral clocks disabled,
MCG_Lite under HIRC mode, VDD = 3.0 V
—
1.22
1.39
mA
IDD_VLPW Very-low-power wait mode current, core disabled,
4 MHz system/ 1 MHz bus and flash, all
peripheral clocks disabled, VDD = 3.0 V
— 172 182 μA
IDD_VLPW Very-low-power wait mode current, core disabled,
2 MHz system/ 0.5 MHz bus and flash, all
peripheral clocks disabled, VDD = 3.0 V
— 69 76 μA
IDD_VLPW Very-low-power wait mode current, core disabled,
125 kHz system/ 31.25 kHz bus and flash, all
peripheral clocks disabled, VDD = 3.0 V
— 36 40 μA
IDD_PSTOP2 Partial Stop 2, core and system clock disabled, 12
MHz bus and flash, VDD = 3.0 V
—
1.81
2.06
mA
IDD_PSTOP2 Partial Stop 2, core and system clock disabled,
flash doze enabled, 12 MHz bus, VDD = 3.0 V
—
1.00
1.25
mA
IDD_STOP Stop mode current at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
—
—
—
—
161.93
181.45
236.29
390.33
171.82
191.96
271.17
465.58
μA
IDD_VLPS Very-low-power stop mode current at 3.0 V
• at 25 °C and below
• at 50 °C
• at 85 °C
• at 105 °C
—
—
—
—
3.31
10.43
34.14
104.38
5.14
17.68
61.06
164.44
μA
IDD_VLPS Very-low-power stop mode current at 1.8 V
• at 25 °C and below
—
3.21
5.22
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Table 9. Power consumption operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
• at 50 °C
• at 85 °C
• at 105 °C
—
—
—
10.26
33.49
102.92
17.62
60.19
162.20
μA
IDD_LLS Low-leakage stop mode current, all peripheral
disable, at 3.0 V
• at 25 °C and below
• at 50 °C
• at 70 °C
• at 85 °C
• at 105 °C
—
—
—
—
—
2.06
4.72
8.13
13.34
41.08
3.33
6.85
13.30
24.70
52.43
μA
IDD_LLS Low-leakage stop mode current with RTC current,
at 3.0 V
• at 25 °C and below
• at 50 °C
• at 70 °C
• at 85 °C
• at 105 °C
—
—
—
—
—
2.46
5.12
8.53
13.74
41.48
3.73
7.25
11.78
18.91
52.83
μA
IDD_LLS Low-leakage stop mode current with RTC current,
at 1.8 V
• at 25 °C and below
• at 50 °C
• at 70 °C
• at 85 °C
• at 105 °C
—
—
—
—
—
2.35
4.91
8.32
13.44
40.47
2.70
6.75
11.78
18.21
51.85
μA
3
IDD_VLLS3 Very-low-leakage stop mode 3 current, all
peripheral disable, at 3.0 V
• at 25 °C and below
• at 50 °C
• at 70 °C
• at 85 °C
• at 105 °C
—
—
—
—
—
1.45
3.37
5.76
9.72
30.41
1.85
4.39
8.48
14.30
37.50
μA
IDD_VLLS3 Very-low-leakage stop mode 3 current with RTC
current, at 3.0 V
• at 25 °C and below
• at 50 °C
• at 70 °C
• at 85 °C
• at 105 °C
—
—
—
—
—
2.05
3.97
6.36
10.32
31.01
2.45
4.99
9.08
14.73
38.10
μA
3
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Table 9. Power consumption operating behaviors (continued)
Symbol Description Min. Typ. Max. Unit Notes
IDD_VLLS3 Very-low-leakage stop mode 3 current with RTC
current, at 1.8 V
• at 25 °C and below
• at 50 °C
• at 70 °C
• at 85 °C
• at 105 °C
—
—
—
—
—
1.96
3.86
6.23
10.21
30.25
2.36
5.67
8.53
13.37
37.02
μA
3
IDD_VLLS1 Very-low-leakage stop mode 1 current all
peripheral disabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 70°C
• at 85°C
• at 105 °C
—
—
—
—
—
0.66
1.78
2.55
4.83
16.42
0.80
3.87
4.26
6.64
20.49
μA
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 3.0 V
• at 25 °C and below
• at 50°C
• at 70°C
• at 85°C
• at 105 °C
—
—
—
—
—
1.26
2.38
3.15
5.43
17.02
1.40
4.47
4.86
7.24
21.09
μA
3
IDD_VLLS1 Very-low-leakage stop mode 1 current RTC
enabled at 1.8 V
• at 25 °C and below
• at 50°C
• at 70°C
• at 85°C
• at 105 °C
—
—
—
—
—
1.16
1.96
2.78
4.85
15.78
1.30
2.28
3.37
6.88
18.81
μA
3
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled (SMC_STOPCTRL[PORPO]
= 0) at 3.0 V
• at 25 °C and below
• at 50 °C
• at 70 °C
• at 85 °C
• at 105 °C
—
—
—
—
—
0.35
1.25
2.53
4.40
16.09
0.47
1.44
3.24
5.24
19.29
μA
IDD_VLLS0 Very-low-leakage stop mode 0 current all
peripheral disabled (SMC_STOPCTRL[PORPO]
= 1) at 3 V
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Table 9. Power consumption operating behaviors
Symbol Description Min. Typ. Max. Unit Notes
• at 25 °C and below
• at 50 °C
• at 70 °C
• at 85 °C
• at 105 °C
—
—
—
—
—
0.18
1.09
2.25
4.25
15.95
0.28
1.31
2.94
5.10
19.10
μA
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
each module's specification for its supply current.
2. MCG_Lite configured for HIRC mode. CoreMark benchmark compiled using IAR 7.10 with optimization level high,
optimized for balanced.
3. RTC uses external 32 kHz crystal as clock source, and the current includes ERCLK32K power consumption.
Table 10. Low power mode peripheral adders — typical value
Symbol Description Temperature (°C) Unit
-40 25 50 70 85 105
IIRC8MHz 8 MHz internal reference clock (IRC)
adder. Measured by entering STOP or
VLPS mode with 8 MHz IRC enabled,
MCG_SC[FCRDIV]=000b,
MCG_MC[LIRC_DIV2]=000b.
93 93 93 93 93 93 µA
IIRC2MHz 2 MHz internal reference clock (IRC)
adder. Measured by entering STOP mode
with the 2 MHz IRC enabled,
MCG_SC[FCRDIV]=000b,
MCG_MC[LIRC_DIV2]=000b.
29 29 29 29 29 29 µA
IEREFSTEN4MHz External 4 MHz crystal clock adder.
Measured by entering STOP or VLPS
mode with the crystal enabled.
206 224 230 238 245 253 µA
IEREFSTEN32KHz External 32 kHz crystal clock adder by
means of the OSC0_CR[EREFSTEN and
EREFSTEN] bits. Measured by entering all
modes with the crystal enabled.
• VLLS1
• VLLS3
• LLS
• VLPS
• STOP
440
440
490
510
510
490
490
490
560
560
540
540
540
560
560
560
560
560
560
560
570
570
570
610
610
580
580
680
680
680
nA
ILPTMR LPTMR peripheral adder measured by
placing the device in VLLS1 mode with
LPTMR enabled using LPO.
30
30
30
85
100
200
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Table 10. Low power mode peripheral adders — typical value (continued)
Symbol Description Temperature (°C) Unit
-40 25 50 70 85 105
nA
ICMP CMP peripheral adder measured by
placing the device in VLLS1 mode with
CMP enabled using the 6-bit DAC and a
single external input for compare. Includes
6-bit DAC power consumption.
22 22 22 22 22 22 µA
IUART UART peripheral adder measured by
placing the device in STOP or VLPS mode
with selected clock source waiting for RX
data at 115200 baud rate. Includes
selected clock source power consumption.
• IRC8M (8 MHz internal reference
clock)
• IRC2M (2 MHz internal reference
clock)
114
34
114
34
114
34
114
34
114
34
114
34
µA
ITPM TPM peripheral adder measured by
placing the device in STOP or VLPS mode
with selected clock source configured for
output compare generating 100 Hz clock
signal. No load is placed on the I/O
generating the clock signal. Includes
selected clock source and I/O switching
currents.
• IRC8M (8 MHz internal reference
clock)
• IRC2M (2 MHz internal reference
clock)
147
42
147
42
147
42
147
42
147
42
147
42
µA
IBG Bandgap adder when BGEN bit is set and
device is placed in VLPx or VLLSx mode.
45 45 45 45 45 45 µA
IADC ADC peripheral adder combining the
measured values at VDD and VDDA by
placing the device in STOP or VLPS
mode. ADC is configured for low power
mode using the internal clock and
continuous conversions.
330 330 330 330 330 330 µA
2.2.5.1 Diagram: Typical IDD_RUN operating behavior
The following data was measured under these conditions:
• MCG-Lite in HIRC for run mode, and LIRC for VLPR mode
• No GPIOs toggled
• Code execution from flash
• For the ALLOFF curve, all peripheral clocks are disabled except FTFA
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Figure 2. Run mode supply current vs. core frequency
General
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General
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Current Consumption on VDD (A)
Current Consumption on VDD (A)
Figure 3. VLPR mode current vs. core frequency
2.2.6 EMC radiated emissions operating behaviors
Table 11. EMC radiated emissions operating behaviors for 64-pin LQFP
package
Symbol Description Frequency
band
(MHz)
Typ. Unit Notes
VRE1 Radiated emissions voltage, band 1 0.15–50 11 dBμV 1, 2
VRE2 Radiated emissions voltage, band 2 50–150 12 dBμV
VRE3 Radiated emissions voltage, band 3 150–500 10 dBμV
VRE4 Radiated emissions voltage, band 4 500–1000 6 dBμV
VRE_IEC IEC level 0.15–1000 N — 2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement
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of Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and
Wideband TEM Cell Method. Measurements were made while the microcontroller was running basic application code.
The reported emission level is the value of the maximum measured emission, rounded up to the next whole number,
from among the measured orientations in each frequency range.
2. VDD = 3.3 V, TA = 25 °C, fOSC = IRC48M, fSYS = 48 MHz, fBUS = 24 MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and
Wideband TEM Cell Method
2.2.7 Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to www.freescale.com.
2. Perform a keyword search for “EMC design.”
2.2.8 Capacitance attributes
Table 12. Capacitance attributes
Symbol Description Min. Max. Unit
CIN Input capacitance — 7 pF
2.3 Switching specifications
2.3.1 Device clock specifications
Table 13. Device clock specifications
Symbol Description Min. Max. Unit
Normal run mode
fSYS System and core clock1— 48 MHz
fBUS Bus clock1— 24 MHz
fFLASH Flash clock1— 24 MHz
fLPTMR LPTMR clock — 24 MHz
VLPR and VLPS modes2
fSYS System and core clock — 4 MHz
fBUS Bus clock — 1 MHz
fFLASH Flash clock — 1 MHz
fLPTMR LPTMR clock3— 24 MHz
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Table 13. Device clock specifications (continued)
Symbol Description Min. Max. Unit
fLPTMR_ERCLK LPTMR external reference clock — 16 MHz
fosc_hi_2 Oscillator crystal or resonator frequency — high frequency
mode (high range) (MCG_C2[RANGE]=1x)
— 16 MHz
fTPM TPM asynchronous clock — 8 MHz
fLPUART0/1 LPUART0/1 asynchronous clock — 8 MHz
1. The maximum value of system clock, core clock, bus clock, and flash clock under normal run mode can be 3% higher
than the specified maximum frequency when IRC 48MHz is used as the clock source.
2. The frequency limitations in VLPR and VLPS modes here override any frequency specification listed in the timing
specification for any other module. These same frequency limits apply to VLPS, whether VLPS was entered from RUN
or from VLPR.
3. The LPTMR can be clocked at this speed in VLPR or VLPS only when the source is an external pin.
2.3.2 General switching specifications
These general-purpose specifications apply to all signals configured for GPIO and
UART signals.
Table 14. General switching specifications
Description Min. Max. Unit Notes
GPIO pin interrupt pulse width (digital glitch filter disabled) —
Synchronous path
1.5 — Bus clock
cycles
1
External RESET and NMI pin interrupt pulse width —
Asynchronous path
100 — ns 2
GPIO pin interrupt pulse width — Asynchronous path 16 — ns 2
Port rise and fall time — 36 ns 3
1. The synchronous and asynchronous timing must be met.
2. This is the shortest pulse that is guaranteed to be recognized.
3. 75 pF load
2.4 Thermal specifications
2.4.1 Thermal operating requirements
Table 15. Thermal operating requirements for WLCSP package
Symbol Description Min. Max. Unit Notes
TJDie junction temperature –40 95 °C
TAAmbient temperature –40 85 °C 1
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