PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
25 June 2019 Product data sheet
1. General description
NPN/NPN general-purpose double transistor in a SOT363 (SC-88) very small Surface-Mounted
Device (SMD) plastic package.
2. Features and benefits
General-purpose double transistor
Board-space reduction
3. Applications
General-purpose switching and amplification
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter
voltage
open base - - 40 V
ICcollector current - - 200 mA
hFE DC current gain VCE = 1 V; IC = 10 mA; Tamb = 25 °C 100 180 300
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E1 emitter TR1
2 B1 base TR1
3 C2 collector TR2
4 E2 emitter TR2
5 B2 base TR2
6 C1 collector TR1
1 32
456
TSSOP6 (SOT363)
sym020
B1
E1 C2
B2
C1
TR1
TR2
E2
Nexperia PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMBT3904YS TSSOP6 plastic surface-mounted package; 6 leads SOT363
7. Marking
Table 4. Marking codes
Type number Marking code[1]
PMBT3904YS BC%
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 6 V
ICcollector current - 200 mA
ICM peak collector current - 200 mA
IBM peak base current
single pulse; tp ≤ 1 ms
- 100 mA
Ptot total power dissipation Tamb ≤ 25 °C [1] - 230 mW
Per device
Ptot total power dissipation Tamb ≤ 25 °C [1] - 350 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMBT3904YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 2 / 10
Nexperia PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
006aab113
Tamb (°C)
- 75 17575- 25 12525
200
100
300
400
Ptot
(mW)
0
FR4 PCB, standard footprint
Fig. 1. Per device: Power derating curve
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance from
junction to ambient
in free air [1] - - 543 K/W
Rth(j-sp) thermal resistance from
junction to solder point
- - 290 K/W
Per device
Rth(j-a) thermal resistance from
junction to ambient
in free air [1] - - 357 K/W
[1] Device mounted on anFR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab114
10- 5 1010- 2
10- 4 102
10- 1
tp (s)
10- 3 103
1
102
10
103
Zth(j-a)
(K/W)
1
δ = 1
0.33
0.01
0.02
0.05
0.5
0.1
0.2
0
0.75
FR4 PCB, standard footprint
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMBT3904YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 3 / 10
Nexperia PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
ICBO collector-base cut-off
current
VCB = 30 V; IE = 0 A; Tamb = 25 °C - - 50 nA
IEBO emitter-base cut-off
current
VEB = 6 V; IC = 0 A; Tamb = 25 °C - - 50 nA
VCE = 1 V; IC = 0.1 mA; Tamb = 25 °C 60 180 -
VCE = 1 V; IC = 1 mA; Tamb = 25 °C 80 180 -
VCE = 1 V; IC = 10 mA; Tamb = 25 °C 100 180 300
VCE = 1 V; IC = 50 mA; Tamb = 25 °C 60 105 -
hFE DC current gain
VCE = 1 V; IC = 100 mA; Tamb = 25 °C 30 50 -
IC = 10 mA; IB = 1 mA; Tamb = 25 °C - 75 200 mVVCEsat collector-emitter
saturation voltage IC = 50 mA; IB = 5 mA; Tamb = 25 °C - 120 300 mV
IC = 10 mA; IB = 1 mA; Tamb = 25 °C 650 750 850 mVVBEsat base-emitter saturation
voltage IC = 50 mA; IB = 5 mA - 850 950 mV
tddelay time - - 35 ns
trrise time - - 35 ns
ton turn-on time - - 70 ns
tsstorage time - - 200 ns
tffall time - - 50 ns
toff turn-off time
IC = 10 mA; IBon = 1 mA; IBoff = -1 mA;
VCC = 3 V; Tamb = 25 °C
- - 250 ns
Cccollector capacitance VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 4 pF
Ceemitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A;
Tamb = 25 °C
- - 8 pF
fTtransition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz;
Tamb = 25 °C
300 - - MHz
NF noise figure VCE = 5 V; IC = 100 µA; RS = 1 kΩ;
Tamb = 25 °C; f = 10 Hz to 15.7 kHz
- - 5 dB
PMBT3904YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 4 / 10
Nexperia PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
006aab115
200
400
600
hFE
0
IC (mA)
10- 1 103
102
1 10
(1)
(2)
(3)
VCE = 1 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 3. DC current gain as a function of collector
current; typical values
VCE (V)
0 1084 62
006aab116
0.10
0.05
0.15
0.20
IC
(A)
0.0
IB (mA) = 5.0 4.5
3.5
3.0 2.5
2.0 1.5
1.0
0.5
4.0
Tamb = 25 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
006aab117
0.4
0.8
1.2
VBE
(V)
0
IC (mA)
10- 1 103
102
1 10
(1)
(2)
(3)
VCE = 1 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 5. Base-emitter voltage as a function of collector
current; typical values
006aab118
IC (mA)
10- 1 103
102
1 10
0.5
0.9
1.3
VBEsat
(V)
0.1
(1)
(2)
(3)
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 6. Base-emitter saturation voltage as a function of
collector current; typical values
PMBT3904YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 5 / 10
Nexperia PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
006aab119
IC (mA)
10- 1 103
102
1 10
10- 1
1
VCEsat
(V)
10- 2
(1)
(3)
(2)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 7. Collector-emitter saturation voltage as a function of collector current; typical values
11. Test information
RC
R2
R1
DUT
mlb826
Vo
RB
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
Fig. 8. Test circuit for switching times
12. Package outline
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
1 32
46 5
14-10-03Dimensions in mm
Fig. 9. Package outline TSSOP6 (SOT363)
PMBT3904YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 6 / 10
Nexperia PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
13. Soldering
solder lands
solder resist
occupied area
solder paste
sot363_fr
2.65
2.35 0.4 (2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensions in mm
Fig. 10. Reflow soldering footprint for TSSOP6 (SOT363)
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
Fig. 11. Wave soldering footprint for TSSOP6 (SOT363)
PMBT3904YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 7 / 10
Nexperia PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMBT3904YS v.2 20190625 Product data sheet - PMBT3904YS v.1
Modifications: The format of this data sheet has been redesigned to comply with the identity guidelines
of Nexperia.
Legal texts have been adapted to the new company name where appropriate.
PMBT3904YS v.1 20090512 Product data sheet - -
PMBT3904YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 8 / 10
Nexperia PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification This document contains data from
the preliminary specification.
Product [short]
data sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
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multiple devices. The latest product status information is available on
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PMBT3904YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 9 / 10
Nexperia PMBT3904YS
40 V, 200 mA NPN/NPN general-purpose double transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 4
11. Test information.......................................................... 6
12. Package outline.......................................................... 6
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information........................................................9
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 25 June 2019
PMBT3904YS All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 25 June 2019 10 / 10