M95160 M95160-W M95160-R M95160-DF 16-Kbit serial SPI bus EEPROM with high-speed clock Datasheet - production data Features 3',3 %1 76623 ': PLOZLGWK 62 01 PLOZLGWK SO8 (MN) 150 mil width * Compatible with the Serial Peripheral Interface (SPI) bus * Memory array - 16 Kb (2 Kbytes) of EEPROM - Page size: 32 bytes - Additional Write lockable Page (Identification page) * Write - Byte Write within 5 ms - Page Write within 5 ms TSSOP8 (DW) 169 mil width * Write Protect: quarter, half or whole memory array * High-speed clock: 20 MHz UFDFPN8 (MC) 2 x 3 mm * Single supply voltage: - 2.5 V to 5.5 V for M95160-W - 1.8 V to 5.5 V for M95160-R - 1.7 V to 5.5 V for M95160-DF * Operating temperature range: from -40C up to +85C * Enhanced ESD protection * More than 4 million Write cycles WLCSP (CS) * More than 200-year data retention * Packages: - SO8 (ECOPACK2(R)) - TSSOP8 (ECOPACK2(R)) - UFDFPN8 (ECOPACK2(R)) - WLCSP (ECOPACK2(R)) - Unsawn wafer (each die is tested) Unsawn wafer October 2015 This is information on a product in full production. DocID022580 Rev 8 1/53 www.st.com Contents M95160 M95160-W M95160-R M95160-DF Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 3.1 Serial Data Output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.2 Serial Data Input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.3 Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.4 Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.5 Hold (HOLD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3.6 Write Protect (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.7 VCC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.8 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Connecting to the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 5 Operating features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.1 6 SPI modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.1.1 Operating supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.1.2 Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.1.3 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.1.4 Power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.2 Active Power and Standby Power modes . . . . . . . . . . . . . . . . . . . . . . . . 14 5.3 Hold condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.4 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.5 Data protection and protocol control . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6.1 Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.2 Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.3 Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6.3.1 2/53 WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 7 Contents 6.3.2 WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6.3.3 BP1, BP0 bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6.3.4 SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6.4 Write Status Register (WRSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.5 Read from Memory Array (READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6.6 Write to Memory Array (WRITE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 6.7 Read Identification Page (available only in M95160-D devices) . . . . . . . 26 6.8 Write Identification Page (available only in M95160-D devices) . . . . . . . 27 6.9 Read Lock Status (available only in M95160-D devices) . . . . . . . . . . . . . 28 6.10 Lock ID (available only in M95160-D devices) . . . . . . . . . . . . . . . . . . . . . 29 Power-up and delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 7.1 Power-up state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 7.2 Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 8 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 9 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 10 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 10.1 SO8N package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 10.2 TSSOP8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 10.3 UFDFN8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 10.4 WLCSP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 11 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 DocID022580 Rev 8 3/53 3 List of tables M95160 M95160-W M95160-R M95160-DF List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. 4/53 Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Write-protected block size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Instruction set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Significant bits within the two address bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Status Register format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Operating conditions (M95160-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Operating conditions (M95160-R, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Operating conditions (M95160-DF, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Cycling performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Memory cell data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 DC characteristics (M95160-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 DC characteristics (M95160-R or M95160-DF, device grade 6). . . . . . . . . . . . . . . . . . . . . 35 AC characteristics (M95160-W, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 AC characteristics (M95160-R or M95160-DF, device grade 6) . . . . . . . . . . . . . . . . . . . . 37 AC characteristics (M95160-F, device grade 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 AC characteristics (M95160-W, device grade 6) End of life products: these values apply only to M95160-WMN6TP/S and M95160-WDW6TP/S devices) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 SO8N - 8-lead plastic small outline, 150 mils body width, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 TSSOP8 - 8-lead thin shrink small outline, 3 x 4.4 mm, 0.5 mm pitch, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 UFDFN8 - 8-lead, 2 x 3 mm, 0.5 mm pitch ultra thin profile fine pitch dual flat package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Ordering information scheme (unsawn wafer) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8-pin package connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 WLCSP connections (top view, marking side, with bumps on the underside) . . . . . . . . . . . 7 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Bus master and memory devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Hold condition activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Write Enable (WREN) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Write Disable (WRDI) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Read Status Register (RDSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Write Status Register (WRSR) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Read from Memory Array (READ) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Byte Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Page Write (WRITE) sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Read Identification Page sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Write identification page sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Read Lock Status sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Lock ID sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Serial input timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Hold timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Serial output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 SO8N - 8-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . . 41 SO8N - 8-lead plastic small outline, 150 mils body width, package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 TSSOP8 - 8-lead thin shrink small outline, 3 x 4.4 mm, 0.5 mm pitch, package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 UFDFN8 - 8-lead, 2 x 3 mm, 0.5 mm pitch ultra thin profile fine pitch dual flat package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 DocID022580 Rev 8 5/53 5 Description 1 M95160 M95160-W M95160-R M95160-DF Description The M95160 devices are Electrically Erasable PROgrammable Memories (EEPROMs) organized as 2048 x 8 bits, accessed through the SPI bus. The M95160-W can operate with a supply voltage from 2.5 V to 5.5 V, the M95160-R can operate with a supply voltage from 1.8 V to 5.5 V, and the M95160-DF can operate with a supply voltage from 1.7 V to 5.5 V, over an ambient temperature range of -40 C / +85 C. The M95160-D offers an additional page, named the Identification Page (32 bytes). The Identification Page can be used to store sensitive application parameters which can be (later) permanently locked in Read-only mode. Figure 1. Logic diagram 6## $ 1 # 3 -XXX 7 (/,$ 633 !)# The SPI bus signals are C, D and Q, as shown in Figure 1 and Table 1. The device is selected when Chip Select (S) is driven low. Communications with the device can be interrupted when the HOLD is driven low. Table 1. Signal names Signal name 6/53 Function Direction C Serial Clock Input D Serial Data Input Input Q Serial Data Output Output S Chip Select Input W Write Protect Input HOLD Hold Input VCC Supply voltage - VSS Ground - DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF Description Figure 2. 8-pin package connections (top view) -XXX 3 1 7 633 6## (/,$ # $ !)$ 1. See Section 10: Package information for package dimensions, and how to identify pin-1. Figure 3. WLCSP connections (top view, marking side, with bumps on the underside) Y s^^ ^ ,K> s t t s^^ Y ^ s ,K> KZ 0DUNLQJVLGH WRSYLHZ %XPSVLGH ERWWRPYLHZ 069 DocID022580 Rev 8 7/53 40 Memory organization 2 M95160 M95160-W M95160-R M95160-DF Memory organization The memory is organized as shown in the following figure. Figure 4. Block diagram +2/' : 6 +LJKYROWDJH JHQHUDWRU &RQWUROORJLF & ' 4 ,2VKLIWUHJLVWHU $GGUHVVUHJLVWHU DQGFRXQWHU 'DWDUHJLVWHU 6WDWXV UHJLVWHU <GHFRGHU ((3520 DUHD SDJH ,GHQWLILFDWLRQSDJH ;GHFRGHU 069 8/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 3 Signal description Signal description During all operations, VCC must be held stable and within the specified valid range: VCC(min) to VCC(max). All of the input and output signals must be held high or low (according to voltages of VIH, VOH, VIL or VOL, as specified in Section 9: DC and AC parameters). These signals are described next. 3.1 Serial Data Output (Q) This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of Serial Clock (C). 3.2 Serial Data Input (D) This input signal is used to transfer data serially into the device. It receives instructions, addresses, and the data to be written. Values are latched on the rising edge of Serial Clock (C). 3.3 Serial Clock (C) This input signal provides the timing of the serial interface. Instructions, addresses, or data present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on Serial Data Output (Q) change from the falling edge of Serial Clock (C). 3.4 Chip Select (S) When this input signal is high, the device is deselected and Serial Data Output (Q) is at high impedance. The device is in the Standby Power mode, unless an internal Write cycle is in progress. Driving Chip Select (S) low selects the device, placing it in the Active Power mode. After power-up, a falling edge on Chip Select (S) is required prior to the start of any instruction. 3.5 Hold (HOLD) The Hold (HOLD) signal is used to pause any serial communications with the device without deselecting the device. During the Hold condition, the Serial Data Output (Q) is high impedance, and Serial Data Input (D) and Serial Clock (C) are Don't Care. To start the Hold condition, the device must be selected, with Chip Select (S) driven low. DocID022580 Rev 8 9/53 40 Signal description 3.6 M95160 M95160-W M95160-R M95160-DF Write Protect (W) The main purpose of this input signal is to freeze the size of the area of memory that is protected against Write instructions (as specified by the values in the BP1 and BP0 bits of the Status Register). This pin must be driven either high or low, and must be stable during all Write instructions. 3.7 VCC supply voltage VCC is the supply voltage. 3.8 VSS ground VSS is the reference for all signals, including the VCC supply voltage. 10/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 4 Connecting to the SPI bus Connecting to the SPI bus All instructions, addresses and input data bytes are shifted in to the device, most significant bit first. The Serial Data Input (D) is sampled on the first rising edge of the Serial Clock (C) after Chip Select (S) goes low. All output data bytes are shifted out of the device, most significant bit first. The Serial Data Output (Q) is latched on the first falling edge of the Serial Clock (C) after the instruction (such as the Read from Memory Array and Read Status Register instructions) have been clocked into the device. Figure 5. Bus master and memory devices on the SPI bus 966 9&& 5 6'2 63,,QWHUIDFHZLWK &32/&3+$ RU 6', 6&. & 4 9&& ' 4 9&& ' 966 63,%XV0DVWHU 5 &6 & 63,0HPRU\ 'HYLFH 5 & 4 9&& ' 966 63,0HPRU\ 'HYLFH 5 966 63,0HPRU\ 'HYLFH &6 &6 6 : +2/' 6 : +2/' 6 : +2/' $,E 1. The Write Protect (W) and Hold (HOLD) signals should be driven, high or low as appropriate. Figure 5 shows an example of three memory devices connected to an SPI bus master. Only one memory device is selected at a time, so only one memory device drives the Serial Data Output (Q) line at a time. The other memory devices are high impedance. The pull-up resistor R (represented in Figure 5) ensures that a device is not selected if the Bus Master leaves the S line in the high impedance state. In applications where the Bus Master may leave all SPI bus lines in high impedance at the same time (for example, if the Bus Master is reset during the transmission of an instruction), the clock line (C) must be connected to an external pull-down resistor so that, if all inputs/outputs become high impedance, the C line is pulled low (while the S line is pulled high): this ensures that S and C do not become high at the same time, and so, that the tSHCH requirement is met. The typical value of R is 100 k. DocID022580 Rev 8 11/53 40 Connecting to the SPI bus 4.1 M95160 M95160-W M95160-R M95160-DF SPI modes These devices can be driven by a microcontroller with its SPI peripheral running in either of the following two modes: * CPOL=0, CPHA=0 * CPOL=1, CPHA=1 For these two modes, input data is latched in on the rising edge of Serial Clock (C), and output data is available from the falling edge of Serial Clock (C). The difference between the two modes, as shown in Figure 6, is the clock polarity when the bus master is in Stand-by mode and not transferring data: * C remains at 0 for (CPOL=0, CPHA=0) * C remains at 1 for (CPOL=1, CPHA=1) Figure 6. SPI modes supported #0/, #0(! # # $ -3" 1 -3" !)" 12/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 5 Operating features 5.1 Supply voltage (VCC) 5.1.1 Operating supply voltage (VCC) Operating features Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage within the specified [VCC(min), VCC(max)] range must be applied (see Operating conditions in Section 9: DC and AC parameters). This voltage must remain stable and valid until the end of the transmission of the instruction and, for a Write instruction, until the completion of the internal write cycle (tW). In order to secure a stable DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor (usually of the order of 10 nF to 100 nF) close to the VCC/VSS device pins. 5.1.2 Device reset In order to prevent erroneous instruction decoding and inadvertent Write operations during power-up, a power-on-reset (POR) circuit is included. At power-up, the device does not respond to any instruction until VCC reaches the POR threshold voltage. This threshold is lower than the minimum VCC operating voltage (see Operating conditions in Section 9). At power-up, when VCC passes over the POR threshold, the device is reset and is in the following state: * in Standby Power mode, * deselected, * Status Register values: - The Write Enable Latch (WEL) bit is reset to 0. - The Write In Progress (WIP) bit is reset to 0. - The SRWD, BP1 and BP0 bits remain unchanged (non-volatile bits). It is important to note that the device must not be accessed until VCC reaches a valid and stable level within the specified [VCC(min), VCC(max)] range, as defined under Operating conditions in Section 9. 5.1.3 Power-up conditions When the power supply is turned on, VCC rises continuously from VSS to VCC. During this time, the Chip Select (S) line is not allowed to float but should follow the VCC voltage. It is therefore recommended to connect the S line to VCC via a suitable pull-up resistor (see Figure 5). In addition, the Chip Select (S) input offers a built-in safety feature, as the S input is edgesensitive as well as level-sensitive: after power-up, the device does not become selected until a falling edge has first been detected on Chip Select (S). This ensures that Chip Select (S) must have been high, prior to going low to start the first operation. The VCC voltage has to rise continuously from 0 V up to the minimum VCC operating voltage defined under Operating conditions in Section 9. DocID022580 Rev 8 13/53 40 Operating features 5.1.4 M95160 M95160-W M95160-R M95160-DF Power-down During power-down (continuous decrease of the VCC supply voltage below the minimum VCC operating voltage defined under Operating conditions in Section 9), the device must be: 5.2 * deselected (Chip Select S should be allowed to follow the voltage applied on VCC), * in Standby Power mode (there should not be any internal write cycle in progress). Active Power and Standby Power modes When Chip Select (S) is low, the device is selected, and in the Active Power mode. The device consumes ICC. When Chip Select (S) is high, the device is deselected. If a Write cycle is not currently in progress, the device then goes into the Standby Power mode, and the device consumption drops to ICC1, as specified in DC characteristics (see Section 9). 5.3 Hold condition The Hold (HOLD) signal is used to pause any serial communications with the device without resetting the clocking sequence. To enter the Hold condition, the device must be selected, with Chip Select (S) low. During the Hold condition, the Serial Data Output (Q) is high impedance, and the Serial Data Input (D) and the Serial Clock (C) are Don't Care. Normally, the device is kept selected for the whole duration of the Hold condition. Deselecting the device while it is in the Hold condition has the effect of resetting the state of the device, and this mechanism can be used if required to reset any processes that had been in progress.(a) (b) Figure 7. Hold condition activation F +2/' +ROG FRQGLWLRQ +ROG FRQGLWLRQ DL( a. This resets the internal logic, except the WEL and WIP bits of the Status Register. b. In the specific case where the device has shifted in a Write command (Inst + Address + data bytes, each data byte being exactly 8 bits), deselecting the device also triggers the Write cycle of this decoded command. 14/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF Operating features The Hold condition starts when the Hold (HOLD) signal is driven low when Serial Clock (C) is already low (as shown in Figure 7). Figure 7 also shows what happens if the rising and falling edges are not timed to coincide with Serial Clock (C) being low. 5.4 Status Register The Status Register contains a number of status and control bits that can be read or set (as appropriate) by specific instructions. See Section 6.3: Read Status Register (RDSR) for a detailed description of the Status Register bits. 5.5 Data protection and protocol control The device features the following data protection mechanisms: * Before accepting the execution of the Write and Write Status Register instructions, the device checks whether the number of clock pulses comprised in the instructions is a multiple of eight. * All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set the Write Enable Latch (WEL) bit. * The Block Protect (BP1, BP0) bits in the Status Register are used to configure part of the memory as read-only. * The Write Protect (W) signal is used to protect the Block Protect (BP1, BP0) bits in the Status Register. For any instruction to be accepted, and executed, Chip Select (S) must be driven high after the rising edge of Serial Clock (C) for the last bit of the instruction, and before the next rising edge of Serial Clock (C). Two points should be noted in the previous sentence: * The "last bit of the instruction" can be the eighth bit of the instruction code, or the eighth bit of a data byte, depending on the instruction (except for Read Status Register (RDSR) and Read (READ) instructions). * The "next rising edge of Serial Clock (C)" might (or might not) be the next bus transaction for some other device on the SPI bus. Table 2. Write-protected block size Status Register bits Protected block Protected array addresses 0 none none 0 1 Upper quarter 0600h - 07FFh 1 0 Upper half 0400h - 07FFh 1 1 Whole memory 0000h - 07FFh BP1 BP0 0 DocID022580 Rev 8 15/53 40 Instructions 6 M95160 M95160-W M95160-R M95160-DF Instructions Each command is composed of bytes (MSBit transmitted first), initiated with the instruction byte, as summarized in Table 3. If an invalid instruction is sent (one not contained in Table 3), the device automatically enters a Wait state until deselected. Table 3. Instruction set Instruction Instruction format Description WREN Write Enable 0000 0110 WRDI Write Disable 0000 0100 RDSR Read Status Register 0000 0101 WRSR Write Status Register 0000 0001 READ Read from Memory Array 0000 0011 WRITE Write to Memory Array 0000 0010 (1) Read Identification Page 1000 0011 (1) Write Identification Page 1000 0010 RDLS(1) Reads the Identification Page lock status 1000 0011 LID(1) Locks the Identification page in read-only mode 1000 0010 RDID WRID 1. Instruction available only for the M95160-D device. For read and write commands to memory array and Identification Page the address is defined by two bytes as explained in Table 4. Table 4. Significant bits within the two address bytes(1)(2) MSB Address byte LSB Address byte Instructions b15 b14 b13 b12 b11 b10 b9 b8 b7 b6 b5 b4 b3 b2 b1 b0 READ or WRITE x x x x x A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 RDID or WRID(3) 0 0 0 0 0 0 0 0 0 0 0 A4 A3 A2 A1 A0 RDLS or LID(3) 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 1. A: Significant address bit. 2. x: bit is Don't Care. 3. Instruction available only for the M95160-D device. 16/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 6.1 Instructions Write Enable (WREN) The Write Enable Latch (WEL) bit must be set prior to each WRITE and WRSR instruction. The only way to do this is to send a Write Enable instruction to the device. As shown in Figure 8, to send this instruction to the device, Chip Select (S) is driven low, and the bits of the instruction byte are shifted in, on Serial Data Input (D). The device then enters a wait state. It waits for the device to be deselected, by Chip Select (S) being driven high. Figure 8. Write Enable (WREN) sequence 3 # )NSTRUCTION $ (IGH )MPEDANCE 1 !)E DocID022580 Rev 8 17/53 40 Instructions 6.2 M95160 M95160-W M95160-R M95160-DF Write Disable (WRDI) One way of resetting the Write Enable Latch (WEL) bit is to send a Write Disable instruction to the device. As shown in Figure 9, to send this instruction to the device, Chip Select (S) is driven low, and the bits of the instruction byte are shifted in, on Serial Data Input (D). The device then enters a wait state. It waits for a the device to be deselected, by Chip Select (S) being driven high. The Write Enable Latch (WEL) bit, in fact, becomes reset by any of the following events: * Power-up * WRDI instruction execution * WRSR instruction completion * WRITE instruction completion. Figure 9. Write Disable (WRDI) sequence 6 & ,QVWUXFWLRQ ' +LJK,PSHGDQFH 4 $,G 18/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 6.3 Instructions Read Status Register (RDSR) The Read Status Register (RDSR) instruction is used to read the Status Register. The Status Register may be read at any time, even while a Write or Write Status Register cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register continuously, as shown in Figure 10. Figure 10. Read Status Register (RDSR) sequence 3 # )NSTRUCTION $ 3TATUS 2EGISTER /UT 3TATUS 2EGISTER /UT (IGH )MPEDANCE 1 -3" -3" !)% The status and control bits of the Status Register are as follows: 6.3.1 WIP bit The Write In Progress (WIP) bit indicates whether the memory is busy with a Write or Write Status Register cycle. When set to 1, such a cycle is in progress, when reset to 0, no such cycle is in progress. 6.3.2 WEL bit The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1, the internal Write Enable Latch is set. When set to 0, the internal Write Enable Latch is reset, and no Write or Write Status Register instruction is accepted. The WEL bit is returned to its reset state by the following events: 6.3.3 * Power-up * Write Disable (WRDI) instruction completion * Write Status Register (WRSR) instruction completion * Write (WRITE) instruction completion BP1, BP0 bits The Block Protect (BP1, BP0) bits are non volatile. They define the size of the area to be software-protected against Write instructions. These bits are written with the Write Status Register (WRSR) instruction. When one or both of the Block Protect (BP1, BP0) bits is set to 1, the relevant memory area (as defined in Table 2) becomes protected against Write (WRITE) instructions. The Block Protect (BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set. DocID022580 Rev 8 19/53 40 Instructions 6.3.4 M95160 M95160-W M95160-R M95160-DF SRWD bit The Status Register Write Disable (SRWD) bit is operated in conjunction with the Write Protect (W) signal. The Status Register Write Disable (SRWD) bit and Write Protect (W) signal enable the device to be put in the Hardware Protected mode (when the Status Register Write Disable (SRWD) bit is set to 1, and Write Protect (W) is driven low). In this mode, the non-volatile bits of the Status Register (SRWD, BP1, BP0) become read-only bits and the Write Status Register (WRSR) instruction is no longer accepted for execution. Table 5. Status Register format b7 SRWD b0 0 0 0 BP1 BP0 WEL WIP Status Register Write Protect Block Protect bits Write Enable Latch bit Write In Progress bit 20/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 6.4 Instructions Write Status Register (WRSR) The Write Status Register (WRSR) instruction is used to write new values to the Status Register. Before it can be accepted, a Write Enable (WREN) instruction must have been previously executed. The Write Status Register (WRSR) instruction is entered by driving Chip Select (S) low, followed by the instruction code, the data byte on Serial Data input (D) and Chip Select (S) driven high. Chip Select (S) must be driven high after the rising edge of Serial Clock (C) that latches in the eighth bit of the data byte, and before the next rising edge of Serial Clock (C). Otherwise, the Write Status Register (WRSR) instruction is not executed. The instruction sequence is shown in Figure 11. Figure 11. Write Status Register (WRSR) sequence 3 # )NSTRUCTION 3TATUS 2EGISTER )N $ (IGH )MPEDANCE -3" 1 !)D Driving the Chip Select (S) signal high at a byte boundary of the input data triggers the selftimed Write cycle that takes tW to complete (as specified in AC tables under Section 9: DC and AC parameters). While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write in progress (WIP) bit: the WIP bit is 1 during the self-timed Write cycle tW, and 0 when the Write cycle is complete. The WEL bit (Write Enable Latch) is also reset at the end of the Write cycle tW. The Write Status Register (WRSR) instruction enables the user to change the values of the BP1, BP0 and SRWD bits: * The Block Protect (BP1, BP0) bits define the size of the area that is to be treated as read-only, as defined in Table 2. * The SRWD (Status Register Write Disable) bit, in accordance with the signal read on the Write Protect pin (W), enables the user to set or reset the Write protection mode of the Status Register itself, as defined in Table 6. When in Write-protected mode, the Write Status Register (WRSR) instruction is not executed. The contents of the SRWD and BP1, BP0 bits are updated after the completion of the WRSR instruction, including the tW Write cycle. The Write Status Register (WRSR) instruction has no effect on the b6, b5, b4, b1, b0 bits in the Status Register. Bits b6, b5, b4 are always read as 0. DocID022580 Rev 8 21/53 40 Instructions M95160 M95160-W M95160-R M95160-DF Table 6. Protection modes W SRWD signal bit 1 0 0 0 1 1 0 1 Mode Write protection of the Status Register Memory content Protected area(1) Unprotected area(1) Status Register is writable (if the WREN instruction Softwarehas set the WEL bit). protected Write-protected The values in the BP1 (SPM) and BP0 bits can be changed. Ready to accept Write instructions Status Register is Hardware writeHardwareprotected. protected The values in the BP1 (HPM) and BP0 bits cannot be changed. Ready to accept Write instructions Write-protected 1. As defined by the values in the Block Protect (BP1, BP0) bits of the Status Register. See Table 2. The protection features of the device are summarized in Table 6. When the Status Register Write Disable (SRWD) bit in the Status Register is 0 (its initial delivery state), it is possible to write to the Status Register (provided that the WEL bit has previously been set by a WREN instruction), regardless of the logic level applied on the Write Protect (W) input pin. When the Status Register Write Disable (SRWD) bit in the Status Register is set to 1, two cases should be considered, depending on the state of the Write Protect (W) input pin: * If Write Protect (W) is driven high, it is possible to write to the Status Register (provided that the WEL bit has previously been set by a WREN instruction). * If Write Protect (W) is driven low, it is not possible to write to the Status Register even if the WEL bit has previously been set by a WREN instruction. (Attempts to write to the Status Register are rejected, and are not accepted for execution). As a consequence, all the data bytes in the memory area, which are Software-protected (SPM) by the Block Protect (BP1, BP0) bits in the Status Register, are also hardware-protected against data modification. Regardless of the order of the two events, the Hardware-protected mode (HPM) can be entered by: * either setting the SRWD bit after driving the Write Protect (W) input pin low, * or driving the Write Protect (W) input pin low after setting the SRWD bit. Once the Hardware-protected mode (HPM) has been entered, the only way of exiting it is to pull high the Write Protect (W) input pin. If the Write Protect (W) input pin is permanently tied high, the Hardware-protected mode (HPM) can never be activated, and only the Software-protected mode (SPM), using the Block Protect (BP1, BP0) bits in the Status Register, can be used. 22/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 6.5 Instructions Read from Memory Array (READ) As shown in Figure 12, to send this instruction to the device, Chip Select (S) is first driven low. The bits of the instruction byte and address bytes are then shifted in, on Serial Data Input (D). The address is loaded into an internal address register, and the byte of data at that address is shifted out, on Serial Data Output (Q). Figure 12. Read from Memory Array (READ) sequence 6 & ,QVWUXFWLRQ %LW$GGUHVV ' 06% 'DWD2XW +LJK,PSHGDQFH 4 'DWD2XW 06% $,' 1. Depending on the memory size, as shown in Table 4, the most significant address bits are Don't Care. If Chip Select (S) continues to be driven low, the internal address register is incremented automatically, and the byte of data at the new address is shifted out. When the highest address is reached, the address counter rolls over to zero, allowing the Read cycle to be continued indefinitely. The whole memory can, therefore, be read with a single READ instruction. The Read cycle is terminated by driving Chip Select (S) high. The rising edge of the Chip Select (S) signal can occur at any time during the cycle. The instruction is not accepted, and is not executed, if a Write cycle is currently in progress. DocID022580 Rev 8 23/53 40 Instructions 6.6 M95160 M95160-W M95160-R M95160-DF Write to Memory Array (WRITE) As shown in Figure 13, to send this instruction to the device, Chip Select (S) is first driven low. The bits of the instruction byte, address byte, and at least one data byte are then shifted in, on Serial Data Input (D). The instruction is terminated by driving Chip Select (S) high at a byte boundary of the input data. The self-timed Write cycle, triggered by the Chip Select (S) rising edge, continues for a period tW (as specified in AC characteristics in Section 9: DC and AC parameters), at the end of which the Write in Progress (WIP) bit is reset to 0. Figure 13. Byte Write (WRITE) sequence 3 # )NSTRUCTION "IT !DDRESS $ $ATA "YTE (IGH )MPEDANCE 1 !)$ 1. Depending on the memory size, as shown in Table 4, the most significant address bits are Don't Care. In the case of Figure 13, Chip Select (S) is driven high after the eighth bit of the data byte has been latched in, indicating that the instruction is being used to write a single byte. However, if Chip Select (S) continues to be driven low, as shown in Figure 14, the next byte of input data is shifted in, so that more than a single byte, starting from the given address towards the end of the same page, can be written in a single internal Write cycle. Each time a new data byte is shifted in, the least significant bits of the internal address counter are incremented. If more bytes are sent than will fit up to the end of the page, a condition known as "roll-over" occurs. In case of roll-over, the bytes exceeding the page size are overwritten from location 0 of the same page. The instruction is not accepted, and is not executed, under the following conditions: 24/53 * if the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable instruction just before), * if a Write cycle is already in progress, * if the device has not been deselected, by driving high Chip Select (S), at a byte boundary (after the eighth bit, b0, of the last data byte that has been latched in), * if the addressed page is in the region protected by the Block Protect (BP1 and BP0) bits. DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF Note: Instructions The self-timed write cycle tW is internally executed as a sequence of two consecutive events: [Erase addressed byte(s)], followed by [Program addressed byte(s)]. An erased bit is read as "0" and a programmed bit is read as "1". Figure 14. Page Write (WRITE) sequence 3 # )NSTRUCTION "IT !DDRESS $ $ATA "YTE 3 # $ATA "YTE $ $ATA "YTE $ATA "YTE . !)$ 1. Depending on the memory size, as shown in Table 4, the most significant address bits are Don't Care. DocID022580 Rev 8 25/53 40 Instructions 6.7 M95160 M95160-W M95160-R M95160-DF Read Identification Page (available only in M95160-D devices) The Read Identification Page (RDID) instruction is used to read the Identification Page (additional page of 32 bytes which can be written and later permanently locked in Read-only mode). The Chip Select (S) signal is first driven low, the bits of the instruction byte and address bytes are then shifted in (MSB first) on Serial Data input (D). Address bit A10 must be 0, other upper address bits are Don't Care (it might be easier to define these bits as 0, as shown in Table 4). The data byte pointed to by the lower address bits [A4:A0] is shifted out (MSB first) on Serial Data output (Q). The first byte addressed can be any byte within the identification page. If Chip Select (S) continues to be driven low, the internal address register is automatically incremented and the byte of data at the new address is shifted out. Note that there is no roll over feature in the Identification Page. The address of bytes to read must not exceed the page boundary. The read cycle is terminated by driving Chip Select (S) high. The rising edge of the Chip Select (S) signal can occur at any time when the data bits are shifted out. The instruction is not accepted, and is not executed, if a Write cycle is currently in progress. Figure 15. Read Identification Page sequence 6 & ,QVWUXFWLRQ ELWDGGUHVV ' 06% 'DWD2XW +LJKLPSHGDQFH 4 'DWD2XW 06% $L 26/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 6.8 Instructions Write Identification Page (available only in M95160-D devices) The Write Identification Page (WRID) instruction is used to write the Identification Page (additional page of 32 bytes which can also be permanently locked in Read-only mode). The Chip Select signal (S) is first driven low, and then the bits of the instruction byte, address bytes, and at least one data byte are shifted in (MSB first) on Serial Data input (D). Address bit A10 must be 0, other upper address bits are Don't Care (it might be easier to define these bits as 0, as shown in Table 4). The lower address bits [A4:A0] define the byte address inside the identification page. The self-timed Write cycle starts from the rising edge of Chip Select (S), and continues for a period tW (as specified in Section 9: DC and AC parameters). Figure 16. Write identification page sequence 6 & ,QVWUXFWLRQ ' ELWDGGUHVV 'DWDE\WH +LJKLPSHGDQFH 4 $L The instruction is discarded, and is not executed, under the following conditions: * If the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable instruction just before). * If a Write cycle is already in progress. * If the device has not been deselected, by driving high Chip Select (S), at exactly a byte boundary (after the eighth bit, b0, of the last data byte that has been latched in). DocID022580 Rev 8 27/53 40 Instructions 6.9 M95160 M95160-W M95160-R M95160-DF Read Lock Status (available only in M95160-D devices) The Read Lock Status (RDLS) instruction is used to read the lock status. To send this instruction to the device, Chip Select (S) first has to be driven low. The bits of the instruction byte and address bytes are then shifted in (MSB first) on Serial Data input (D). Address bit A10 must be 1; all other address bits are Don't Care (it might be easier to define these bits as 0, as shown in Table 4). The Lock bit is the LSB (Least Significant Bit) of the byte read on Serial Data output (Q). It is at `1' when the lock is active and at `0' when the lock is not active. If Chip Select (S) continues to be driven low, the same data byte is shifted out. The read cycle is terminated by driving Chip Select (S) high. The instruction sequence is shown in Figure 17. The Read Lock Status instruction is not accepted and not executed if a Write cycle is currently in progress. Figure 17. Read Lock Status sequence 6 & ,QVWUXFWLRQ ELWDGGUHVV ' 06% 'DWD2XW +LJKLPSHGDQFH 4 'DWD2XW 06% $L 28/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 6.10 Instructions Lock ID (available only in M95160-D devices) The Lock Identification Page (LID) command is used to permanently lock the Identification Page in Read-only mode. The LID instruction is issued by driving Chip Select (S) low, sending (MSB first) the instruction code, the address and a data byte on Serial Data input (D), and driving Chip Select (S) high. In the address sent, A10 must be equal to 1. All other address bits are Don't Care (it might be easier to define these bits as 0, as shown in Table 4). The data byte sent must be equal to the binary value xxxx xx1x, where x = Don't Care. The LID instruction is terminated by driving Chip Select (S) high at a data byte boundary, otherwise, the instruction is not executed. Driving Chip Select (S) high at a byte boundary of the input data triggers the self-timed Write cycle which duration is tW (specified in Section 9: DC and AC parameters). The instruction sequence is shown in Figure 18. The instruction is discarded, and is not executed, under the following conditions: * If the Write Enable Latch (WEL) bit has not been set to 1 (by executing a Write Enable instruction just before). * If a Write cycle is already in progress. * If the device has not been deselected, by driving high Chip Select (S), at exactly a byte boundary (after the eighth bit, b0, of the last data byte that has been latched in). Figure 18. Lock ID sequence 6 & ,QVWUXFWLRQ ' ELWDGGUHVV 'DWDE\WH +LJKLPSHGDQFH 4 $L DocID022580 Rev 8 29/53 40 Power-up and delivery state M95160 M95160-W M95160-R M95160-DF 7 Power-up and delivery state 7.1 Power-up state After power-up, the device is in the following state: * Standby power mode, * deselected (after power-up, a falling edge is required on Chip Select (S) before any instructions can be started), * not in the Hold condition, * the Write Enable Latch (WEL) is reset to 0, * Write In Progress (WIP) is reset to 0. The SRWD, BP1 and BP0 bits of the Status Register are unchanged from the previous power-down (they are non-volatile bits). 7.2 Initial delivery state The device is delivered with: 30/53 * the memory array set to all 1s (each byte = FFh) * Status register: bit SRWD =0, BP1 =0 and BP0 =0 * Identification page: byte values are Don't Care. DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 8 Maximum ratings Maximum ratings Stressing the device outside the ratings listed in Table 7 may cause permanent damage to the device. These are stress ratings only, and operation of the device at these, or any other conditions outside those indicated in the operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 7. Absolute maximum ratings Symbol TSTG TLEAD Parameter Min. Max. Unit Ambient operating temperature -40 130 C Storage temperature -65 150 C Lead temperature during soldering See note (1) C VO Output voltage -0.50 VCC+0.6 V VI Input voltage -0.50 6.5 V VCC Supply voltage -0.50 6.5 V IOL DC output current (Q = 0) - 5 mA IOH DC output current (Q = 1) - 5 mA - 4000 V VESD Electrostatic discharge voltage (human body model)(2) 1. Compliant with JEDEC standard J-STD-020D (for small-body, Sn-Pb or Pb free assembly), the ST ECOPACK(R) 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS directive 2011/65/EU of July 2011). 2. Positive and negative pulses applied on different combinations of pin connections, according to AECQ100-002 (compliant with ANSI/ESDA/JEDEC JS-001-2012, C1=100 pF, R1=1500 , R2=500 ). DocID022580 Rev 8 31/53 40 DC and AC parameters 9 M95160 M95160-W M95160-R M95160-DF DC and AC parameters This section summarizes the operating conditions and the DC/AC characteristics of the device. Table 8. Operating conditions (M95160-W, device grade 6) Symbol VCC TA Parameter Min. Max. Unit Supply voltage 2.5 5.5 V Ambient operating temperature -40 85 C Table 9. Operating conditions (M95160-R, device grade 6) Symbol VCC TA Parameter Min. Max. Unit Supply voltage 1.8 5.5 V Ambient operating temperature -40 85 C Table 10. Operating conditions (M95160-DF, device grade 6) Symbol VCC TA Parameter Min. Max. Unit Supply voltage 1.7 5.5 V Ambient operating temperature -40 85 C Max. Unit Table 11. AC measurement conditions Symbol CL Parameter Min. Load capacitance 30 - pF - Input rise and fall times 50 ns - Input pulse voltages 0.2 VCC to 0.8 VCC V - Input and output timing reference voltages 0.3 VCC to 0.7 VCC V Figure 19. AC measurement I/O waveform ,QSXW/HYHOV ,QSXWDQG2XWSXW 7LPLQJ5HIHUHQFH/HYHOV 9&& 9&& 9&& 9&& 32/53 $,& DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF DC and AC parameters Table 12. Cycling performance Symbol Ncycle (1) Parameter Write cycle endurance Test conditions Min. Max. Unit TA 25 C, VCC(min) < VCC < VCC(max) - 4,000,000 TA = 85 C, VCC(min) < VCC < VCC(max) - Write cycle 1,200,000 1. Cycling performance for products identified by process letter K (previous products were specified with 1 million cycles at 25 C) Table 13. Memory cell data retention Parameter Data retention(1)(2) Test conditions Min. Unit TA = 55 C 200 Year 1. The data retention behavior is checked in production, while the 200-year limit is defined from characterization and qualification results. 2. For products identified by process letter K (previous products were specified with a data retention of 40 years at 55C). Table 14. Capacitance Symbol COUT CIN Test conditions(1) Min. Max. Unit VOUT = 0 V - 8 pF Input capacitance (D) VIN = 0 V - 8 pF Input capacitance (other pins) VIN = 0 V - 6 pF Parameter Output capacitance (Q) 1. Sampled only, not 100% tested, at TA = 25 C and a frequency of 5 MHz. DocID022580 Rev 8 33/53 40 DC and AC parameters M95160 M95160-W M95160-R M95160-DF Table 15. DC characteristics (M95160-W, device grade 6) Symbol Parameter Test conditions in addition to those defined in Table 8 and Table 11 Max. Unit ILI Input leakage current VIN = VSS or VCC - 2 A ILO Output leakage current S = VCC, VOUT = VSS or VCC - 2 A VCC = 2.5 V, fC = 5 MHz, C = 0.1 VCC/0.9 VCC, Q = open - 2 VCC = 2.5 V, fC = 10 MHz, C = 0.1 VCC/0.9 VCC, Q = open - 2 (1) VCC = 5.5 V, fC = 20 MHz, C = 0.1 VCC/0.9 VCC, Q = open - 5 (2) During tW, S = VCC, 2.5 V < VCC < 5.5 V - 5 S = VCC, VCC = 5.5 V, VIN = VSS or VCC, - 3 S = VCC, VCC = 2.5 V, VIN = VSS or VCC, - 2 ICC ICC0(3) ICC1 Supply current (Read) Supply current (Write) Supply current (Standby) mA mA A VIL Input low voltage - -0.45 0.3 VCC V VIH Input high voltage - 0.7 VCC VCC+1 V VOL Output low voltage IOL = 1.5 mA, VCC = 2.5 V - 0.4 V VOH Output high voltage VCC = 2.5 V and IOH = 0.4 mA or VCC = 5.5 V and IOH = 2 mA 0.8 VCC - V 1.0(4) 1.65(5) V VRES(3) Internal reset threshold voltage - 1. 5 mA for the devices identified with process letter G or S. 2. Only for the devices identified by process letter K. 3. Characterized only, not tested in production. 4. 0.5 V with the device identified by process letter K. 5. 1.5 V with the device identified by process letter K. 34/53 Min. DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF DC and AC parameters Table 16. DC characteristics (M95160-R or M95160-DF, device grade 6) Symbol Parameter Test conditions in addition to those defined in Table 9 or Table 10 and Table 11(1) Min. Max. Unit ILI Input leakage current VIN = VSS or VCC - 2 A ILO Output leakage current S = VCC, voltage applied on Q = VSS or VCC - 2 A ICC Supply current (Read) VCC = 1.8 V or 1.7 V, fC = 5 MHz, C = 0.1 VCC/0.9 VCC, Q = open - 2(2) mA ICC0(3) Supply current (Write) VCC = 1.8 V or 1.7 V, during tW, S = VCC - 5 mA ICC1 Supply current (Standby) VCC = 1.8 V or 1.7 V, S = VCC, VIN = VSS or VCC - 1 A VIL Input low voltage VCC < 2.5 V -0.45 0.25 VCC V VIH Input high voltage VCC < 2.5 V 0.75 VCC VCC+1 V VOL Output low voltage IOL = 0.15 mA, VCC = 1.8 V or 1.7 V - 0.3 V VOH Output high voltage IOH = -0.1 mA, VCC = 1.8 V or 1.7 V 0.8 VCC - V 1.0(4) 1.65(5) V VRES(3) Internal reset threshold voltage - 1. If the application uses the M95160-R or M95160-DF devices with 2.5 V VCC 5.5 V and -40 C TA +85 C, please refer to Table 15: DC characteristics (M95160-W, device grade 6), rather than to the above table. 2. 2 mA at 3.5 MHz for the devices identified with process letters G or S. 3. Characterized only, not tested in production. 4. 0.5 V with the device identified by process letter K. 5. 1.5 V with the device identified by process letter K. DocID022580 Rev 8 35/53 40 DC and AC parameters M95160 M95160-W M95160-R M95160-DF Table 17. AC characteristics (M95160-W, device grade 6) Test conditions specified in Table 8 and Table 11 (1) Symbol Alt. Parameter VCC = 2.5 to 5.5 V VCC = 4.5 to 5.5 V Unit Min. Max. Min. Max. fC fSCK Clock frequency DC 10 DC 20 MHz tSLCH tCSS1 S active setup time 30 - 15 - ns tSHCH tCSS2 S not active setup time 30 - 15 - ns tSHSL tCS S deselect time 40 - 20 - ns tCHSH tCSH S active hold time 30 - 15 - ns tCHSL - S not active hold time 30 - 15 - ns (2) tCLH Clock high time 40 - 20 - ns tCL(2) tCLL Clock low time 40 - 20 - ns tCLCH(3) tRC Clock rise time - 2 - 2 s tCHCL(3) tFC Clock fall time - 2 - 2 s tDVCH tDSU Data in setup time 10 - 5 - ns tCHDX tDH Data in hold time 10 - 10 - ns tHHCH - Clock low hold time after HOLD not active 30 - 15 - ns tHLCH - Clock low hold time after HOLD active 30 - 15 - ns tCLHL - Clock low set-up time before HOLD active 0 - 0 - ns tCLHH - Clock low set-up time before HOLD not active 0 - 0 - ns Output disable time - 40 - 20 ns Clock low to output valid - 40 - 20 ns tCH (3) tDIS (4) tV tSHQZ tCLQV tCLQX tHO Output hold time 0 - 0 - ns tQLQH(3) tRO Output rise time - 40 - 20 ns tQHQL(3) tFO Output fall time - 40 - 20 ns tHHQV tLZ HOLD high to output valid - 40 - 20 ns tHLQZ(3) tHZ HOLD low to output high-Z - 40 - 20 ns tW tWC Write time - 5 - 5 ms 1. Only for devices identified by process letter K. 2. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max). 3. Characterized only, not tested in production. 4. tCLQV must be compatible with tCL (clock low time): if the SPI bus master offers a Read setup time tSU = 0 ns, tCL can be equal to (or greater than) tCLQV; in all other cases, tCL must be equal to (or greater than) tCLQV+tSU. 36/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF DC and AC parameters Table 18. AC characteristics (M95160-R or M95160-DF, device grade 6) Test conditions specified in Table 9 or Table 10 and Table 11(1) Symbol Alt. Parameter fSCK Clock frequency fC Min. Max. Unit D.C. 5 MHz tSLCH tCSS1 S active setup time 60 - ns tSHCH tCSS2 S not active setup time 60 - ns 90 - ns 60 - ns 60 - ns tSHSL tCS tCHSH tCSH S active hold time tCHSL S not active hold time (2) tCLH Clock high time 80 - ns (2) tCLL Clock low time 80 - ns tCH tCL - S deselect time tCLCH(3) tRC Clock rise time - 2 s (3) tFC Clock fall time - 2 s tCHCL tDVCH tDSU Data in setup time 20 - ns tCHDX tDH Data in hold time 20 - ns tHHCH - Clock low hold time after HOLD not active 60 - ns tHLCH - Clock low hold time after HOLD active 60 - ns tCLHL - Clock low set-up time before HOLD active 0 - ns tCLHH - Clock low set-up time before HOLD not active 0 - ns tSHQZ(3) tDIS Output disable time - 80 ns tCLQV tV Clock low to output valid - 80 ns tCLQX tHO Output hold time 0 - ns tQLQH(3) tRO Output rise time - 80 ns tQHQL(3) tFO Output fall time - 80 ns tHHQV tLZ HOLD high to output valid - 80 ns tHLQZ(3) tHZ HOLD low to output high-Z - 80 ns tW tWC Write time - 5 ms 1. If the application uses the M95160-R or M95160-DF devices at 2.5 V VCC 5.5 V and -40 C TA +85 C, please refer to Table 17: AC characteristics (M95160-W, device grade 6), rather than to the above table. 2. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max). 3. Characterized only, not tested in production. DocID022580 Rev 8 37/53 40 DC and AC parameters M95160 M95160-W M95160-R M95160-DF Table 19. AC characteristics (M95160-F(1), device grade 6) Test conditions specified in Table 10 and Table 11 Symbol fC Alt. Parameter fSCK Clock frequency Min. Max. Unit D.C. 3.5 MHz tSLCH tCSS1 S active setup time 85 - ns tSHCH tCSS2 S not active setup time 85 - ns 120 - ns 85 - ns 85 - ns tCLH Clock high time 110 - ns tCLL Clock low time 110 - ns tSHSL tCS tCHSH tCSH S active hold time tCHSL tCH(2) tCL (2) - S deselect time S not active hold time tCLCH (3) tRC Clock rise time - 2 s tCHCL (3) tFC Clock fall time - 2 s tDVCH tDSU Data in setup time 30 - ns tCHDX tDH Data in hold time 30 - ns tHHCH - Clock low hold time after HOLD not active 85 - ns tHLCH - Clock low hold time after HOLD active 85 - ns tCLHL - Clock low set-up time before HOLD active 0 - 0 tCLHH - Clock low set-up time before HOLD not active 0 - 0 Output disable time - 120 ns Clock low to output valid - 120 ns tSHQZ (3) tDIS tCLQV tV tCLQX tHO Output hold time 0 - ns tQLQH(3) tRO Output rise time - 100 ns tQHQL(3) tFO Output fall time - 100 ns tHHQV tLZ HOLD high to output valid - 110 ns tHLQZ(3) tHZ HOLD low to output high-Z - 110 ns tW tWC Write time - 5 ms 1. Not recommended for new designs, please refer to Table 18: AC characteristics (M95160-R or M95160DF, device grade 6). 2. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max). 3. Characterized only, not tested in production. 38/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF DC and AC parameters The values in the following table must not be considered for any new design. Table 20. AC characteristics (M95160-W, device grade 6) End of life products: these values apply only to M95160-WMN6TP/S and M95160-WDW6TP/S devices) Test conditions specified in Table 8 and Table 11 Symbol Alt. Min. Max. Unit fC fSCK Clock frequency D.C. 5 MHz tSLCH tCSS1 S active setup time 90 - ns tSHCH tCSS2 S not active setup time 90 - ns tSHSL tCS S deselect time 100 - ns tCHSH tCSH S active hold time 90 - ns tCHSL - S not active hold time 90 - ns tCH(1) tCLH Clock high time 90 - ns tCL(1) tCLL Clock low time 90 - ns tCLCH(2) tRC Clock rise time - 1 s (2) tFC Clock fall time - 1 s tCHCL Parameter tDVCH tDSU Data in setup time 20 - ns tCHDX tDH Data in hold time 30 - ns tHHCH - Clock low hold time after HOLD not active 70 - ns tHLCH - Clock low hold time after HOLD active 40 - ns tCLHL - Clock low set-up time before HOLD active 0 - ns tCLHH - Clock low set-up time before HOLD not active 0 - ns tSHQZ(2) tDIS Output disable time - 100 ns tCLQV tV Clock low to output valid - 60 ns tCLQX tHO Output hold time 0 - ns tQLQH(2) tRO Output rise time - 50 ns tQHQL(2) tFO Output fall time - 50 ns tHHQV tLZ HOLD high to output valid - 50 ns tHLQZ(2) tHZ HOLD low to output high-Z - 100 ns tW tWC Write time - 5 ms 1. tCH + tCL must never be lower than the shortest possible clock period, 1/fC(max). 2. Characterized only, not tested in production. DocID022580 Rev 8 39/53 40 DC and AC parameters M95160 M95160-W M95160-R M95160-DF Figure 20. Serial input timing T3(3, 3 T#(3, T#( T3,#( T#(3( T3(#( # T$6#( T#, T#(#, T#,#( T#($8 ,3" ). -3" ). $ (IGH IMPEDANCE 1 !)D Figure 21. Hold timing 3 T(,#( T#,(, T((#( # T#,(( T(,1: T((16 1 !)C Figure 22. Serial output timing 3 T#( T3(3, # T#,16 T#,#( T#(#, T#, T3(1: T#,18 1 T1,1( T1(1, $ !$$2 ,3" ). !)F 40/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 10 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 10.1 SO8N package information Figure 23. SO8N - 8-lead plastic small outline, 150 mils body width, package outline K[U $ $ F FFF E H PP *$8*(3/$1( ' N ( ( $ / / 62$B9 1. Drawing is not to scale. Table 21. SO8N - 8-lead plastic small outline, 150 mils body width, package mechanical data inches(1) millimeters Symbol Min. Typ. Max. Min. Typ. Max. A - - 1.750 - - 0.0689 A1 0.100 - 0.250 0.0039 - 0.0098 A2 1.250 - - 0.0492 - - b 0.280 - 0.480 0.0110 - 0.0189 c 0.170 - 0.230 0.0067 - 0.0091 D 4.800 4.900 5.000 0.1890 0.1929 0.1969 E 5.800 6.000 6.200 0.2283 0.2362 0.2441 E1 3.800 3.900 4.000 0.1496 0.1535 0.1575 e - 1.270 - - 0.0500 - h 0.250 - 0.500 0.0098 - 0.0197 k 0 - 8 0 - 8 L 0.400 - 1.270 0.0157 - 0.0500 DocID022580 Rev 8 41/53 52 Package information M95160 M95160-W M95160-R M95160-DF Table 21. SO8N - 8-lead plastic small outline, 150 mils body width, package mechanical data (continued) inches(1) millimeters Symbol Min. Typ. Max. Min. Typ. Max. L1 - 1.040 - - 0.0409 - ccc - - 0.100 - - 0.0039 1. Values in inches are converted from mm and rounded to four decimal digits. Figure 24. SO8N - 8-lead plastic small outline, 150 mils body width, package recommended footprint [ 2B621B)3B9 1. Dimensions are expressed in millimeters. 42/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 10.2 Package information TSSOP8 package information Figure 25.TSSOP8 - 8-lead thin shrink small outline, 3 x 4.4 mm, 0.5 mm pitch, package outline > W > 76623$0B9 1. Drawing is not to scale. Table 22. TSSOP8 - 8-lead thin shrink small outline, 3 x 4.4 mm, 0.5 mm pitch, package mechanical data inches(1) millimeters Symbol Min. Typ. Max. Min. Typ. Max. A - - 1.200 - - 0.0472 A1 0.050 - 0.150 0.0020 - 0.0059 A2 0.800 1.000 1.050 0.0315 0.0394 0.0413 b 0.190 - 0.300 0.0075 - 0.0118 c 0.090 - 0.200 0.0035 - 0.0079 CP - - 0.100 - - 0.0039 D 2.900 3.000 3.100 0.1142 0.1181 0.1220 e - 0.650 - - 0.0256 - E 6.200 6.400 6.600 0.2441 0.2520 0.2598 E1 4.300 4.400 4.500 0.1693 0.1732 0.1772 L 0.450 0.600 0.750 0.0177 0.0236 0.0295 L1 - 1.000 - - 0.0394 - 0 - 8 0 - 8 1. Values in inches are converted from mm and rounded to four decimal digits. DocID022580 Rev 8 43/53 52 Package information 10.3 M95160 M95160-W M95160-R M95160-DF UFDFN8 package information Figure 26. UFDFN8 - 8-lead, 2 x 3 mm, 0.5 mm pitch ultra thin profile fine pitch dual flat package outline ' 1 $ % $ $ FFF 3LQ ,'PDUNLQJ ( & HHH & 6HDWLQJSODQH $ 6LGHYLHZ [ DDD & DDD & [ 7RSYLHZ ' H 'DWXP$ E / / / / 3LQ ,'PDUNLQJ ( H / H . 7HUPLQDOWLS 'HWDLO$ (YHQWHUPLQDO / 1'[ H 6HH'HWDLO$ %RWWRPYLHZ =:EB0(B9 1. Max. package warpage is 0.05 mm. 2. Exposed copper is not systematic and can appear partially or totally according to the cross section. 3. Drawing is not to scale. 4. The central pad (the area E2 by D2 in the above illustration) must be either connected to VSS or left floating (not connected) in the end application. Table 23. UFDFN8 - 8-lead, 2 x 3 mm, 0.5 mm pitch ultra thin profile fine pitch dual flat package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A 0.450 0.550 0.600 0.0177 0.0217 0.0236 A1 0.000 0.020 0.050 0.0000 0.0008 0.0020 b 0.200 0.250 0.300 0.0079 0.0098 0.0118 D 1.900 2.000 2.100 0.0748 0.0787 0.0827 D2 1.200 - 1.600 0.0472 - 0.0630 E 2.900 3.000 3.100 0.1142 0.1181 0.1220 (2) 44/53 DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF Package information Table 23. UFDFN8 - 8-lead, 2 x 3 mm, 0.5 mm pitch ultra thin profile fine pitch dual flat package mechanical data (continued) inches(1) millimeters Symbol Min Typ Max Min Typ Max 1.200 - 1.600 0.0472 - 0.0630 e - 0.500 - K 0.300 - - 0.0118 - - L 0.300 - 0.500 0.0118 - 0.0197 L1 - - 0.150 - - 0.0059 L3 0.300 - - 0.0118 - - aaa - - 0.150 - - 0.0059 bbb - - 0.100 - - 0.0039 ccc - - 0.100 - - 0.0039 - - 0.050 - - 0.0020 - - 0.080 - - 0.0031 E2 ddd eee (3) 0.0197 1. Values in inches are converted from mm and rounded to 4 decimal digits. 2. Dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from the terminal tip. 3. Applied for exposed die paddle and terminals. Exclude embedding part of exposed die paddle from measuring. DocID022580 Rev 8 45/53 52 Package information 10.4 M95160 M95160-W M95160-R M95160-DF WLCSP package information Figure 27. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale package outline H BBB : 8 ' * H 9 & H $ETAIL ! H % ( /RIENTATION REFERENCE $ DDD /RIENTATION REFERENCE i $ 7AFER BACK SIDE ) "UMP SIDE $ 3IDE VIEW "UMP HHH= $ = CCC DDD - : 89 - : E 3EATING PLANE SEE NOTE $ETAIL ! 2OTATED #?-%?6 1. Drawing is not to scale. Table 24. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale package mechanical data inches(1) millimeters Symbol 46/53 Min Typ Max Min Typ Max A 0.490 0.545 0.600 0.0193 0.0215 0.0236 A1 - 0.190 - - 0.0075 - A2 - 0.355 - - 0.0140 - b(2) - 0.270 - - 0.0106 - D - 1.350 1.475 - 0.0531 0.0581 E - 1.365 1.490 - 0.0537 0.0587 e - 0.400 - - 0.0157 - e1 - 0.800 - - 0.0315 - F - 0.282 - - 0.0111 - DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF Package information Table 24. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale package mechanical data (continued) G - 0.275 - - 0.0108 - aaa - - 0.110 - - 0.0043 bbb - - 0.110 - - 0.0043 ccc - - 0.110 - - 0.0043 ddd - - 0.060 - - 0.0024 eee - - 0.060 - - 0.0024 1. Values in inches are converted from mm and rounded to 4 decimal digits. 2. Dimension is measured at the maximum bump diameter parallel to primary datum Z. Figure 28. WLCSP - 8-bump, 1.350 x 1.365 mm, 0.4 mm pitch wafer level chip scale package recommended footprint H H H H [ E &B)3B9 1. Dimensions are expressed in millimeters. DocID022580 Rev 8 47/53 52 Part numbering 11 M95160 M95160-W M95160-R M95160-DF Part numbering Table 25. Ordering information scheme Example: M95160-D W MN 6 T P Device type M95 = SPI serial access EEPROM Device function 160 = 16 Kbit (2048 x 8) 160-D = 16 Kbit (2048 x 8) plus Identification page Operating voltage W = VCC = 2.5 to 5.5 V R = VCC = 1.8 to 5.5 V F = VCC = 1.7 to 5.5 V Package(1) MN = SO8 (150 mil width) DW = TSSOP8 (169 mil width) MC = UFDFPN8 (MLP8) CS = WLCSP Device grade 6 = Industrial temperature range, -40 to 85 C Device tested with standard test flow Option T = Tape and reel packing blank = tube packing Plating technology G or P = RoHS compliant and halogen-free (ECOPACK2(R)) Process(2) /G or /S = Manufacturing technology code 1. All packages are ECOPACK2(R) (RoHS-compliant and free of brominated, chlorinated and antimony-oxide flame retardants). 2. The process letters apply to WLCSP devices only. The process letters appear on the device package (marking) and on the shipment box. Please contact your nearest ST Sales Office for further information. 48/53 DocID022580 Rev 8 /S M95160 M95160-W M95160-R M95160-DF Part numbering Table 26. Ordering information scheme (unsawn wafer)(1) Example: M95160-D - F K W 20 I /85 Device type M95 = SPI serial access EEPROM Device function 160-D = 16 Kbit (2048 x 8 bit) plus identification page Operating voltage F = VCC = 1.7 V to 5.5 V Process K = F8H Delivery form W = Unsawn wafer Wafer thickness 20 = Non-backlapped wafer Wafer testing I = Inkless test Device grade 85 = 0C to 85C 1. For all information concerning the M95160 delivered in unsawn wafer, please contact your nearest ST Sales Office. DocID022580 Rev 8 49/53 52 Part numbering Note: 50/53 M95160 M95160-W M95160-R M95160-DF Parts marked as "ES", "E" or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity. DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF 12 Revision history Revision history Table 27. Document revision history Date Revision 22-Mar-2012 1 Initial release. 17-Dec-2012 2 Updated: - All information about package UFDFPN8 - Introduction of Package information - Section 7.2: Initial delivery state 08-Jan-2013 3 Updated plating technology 16-Sep-2013 4 Replaced "M95160-F" by "M95160-DF" part number. Updated: - Package figure on cover page - Features: High-speed clock frequency, write cycles and data retention - Section 10: Package information - Figure 4: Block diagram - Section 6: Instructions: updated introduction and added Sections 6.7 to 6.10 - Section 7.2: Initial delivery state - footnote 1 in Table 7: Absolute maximum ratings - Table 15: DC characteristics (M95160-W, device grade 6), Table 16: DC characteristics (M95160-R or M95160-DF, device grade 6), Table 17: AC characteristics (M95160-W, device grade 6) and Table 18: AC characteristics (M95160-R or M95160-DF, device grade 6). - Table 25: Ordering information scheme Added Table 12: Cycling performance and Table 13: Memory cell data retention. 11-Mar-2014 5 Added in cover page "Write lockable Page (Identification page)" 6 Updated Figure 3: WLCSP connections (top view, marking side, with bumps on the underside). Deleted Caution in Figure 3: WLCSP connections (top view, marking side, with bumps on the underside). Updated Footnote 2. in Figure 25: UFDFPN8 (MLP8) - 8-lead ultra thin fine pitch dual flat no lead, package outline. Updated Table 23: UFDFPN8 (MLP8) - 8-lead ultra thin fine pitch dual flat package no lead 2 x 3 mm, data. and Table 24: M95160-RCS6TP/S WLCSP package mechanical data. Updated Figure 26: M95160-RCS6TP/S WLCSP package outline. 21-May-2014 Changes DocID022580 Rev 8 51/53 52 Revision history M95160 M95160-W M95160-R M95160-DF Table 27. Document revision history (continued) Date 06-Oct-2014 05-Oct-2015 52/53 Revision Changes 7 Updated package information in Features. Updated footnotes: - 2 in Table 7: Absolute maximum ratings; - 1 in Table 15: DC characteristics (M95160-W, device grade 6); - 1 in Table 25: Ordering information scheme. Updated Table 25: Ordering information scheme. 8 Added Unsawn wafer option and updated package information in Features. Updated Figure 4: Block diagram and Section 5.1.3: Power-up conditions. Updated Section 10: Package information and its subsections. Added Table 26: Ordering information scheme (unsawn wafer) in Section 11. DocID022580 Rev 8 M95160 M95160-W M95160-R M95160-DF IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2015 STMicroelectronics - All rights reserved DocID022580 Rev 8 53/53 53