Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
A customized leadframe has been incorporated into the standard
SOT-23 package to produce a HEXFET Power MOSFET with
the industry's smallest footprint. This package, dubbed the
Micro3, is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of the Micro3
allows it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
VDSS = 30V
RDS(on) = 0.25Ω
HEXFET® Power MOSFET
Description
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel MOSFET
lSOT-23 Footprint
lLow Profile (<1.1mm)
lAvailable in Tape and Reel
lFast Switching
lLead-Free
lRoHS Compliant, Halogen-Free
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
A
= 25°C
Continuous Drain Current, VGS @ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, VGS @ 10V
I
DM Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
mW
Linear Derating Factor mW/°C
V
GS Gate-to-Source Voltage
V
E
AS Single Pulse Avalanche Energy
g
mJ
dv/dt Peak diode Recovery dv/dt
d
V/ns
T
J ,
T
STG Junction and Storage Temperature Range °C
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJA Maximum Junction-to-Ambient
f
–––
230
°C/W
3.9
A
5.0
540
4.3
±20
Max.
1.2
0.93
7.3
-55 to + 150
D
S
G
3
1
2
Micro3™
IRLML2803PbF
Form Quantity
IRLML2803TRPbF Micro3
™
(SOT-23) Tape and Reel 3000 IRLML2803TRPbF
Package Type
Standard Pack
Orderable Part NumberBase Part Number
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2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2803PbF
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA
ΔV(BR)DSS/ΔT
JBreakdown Voltage Temp. Coefficient 0.029 V/°C Reference to 25°C, ID = 1mA
0.25 VGS = 10V, ID = 0.91A
0.40 VGS = 4.5V, ID = 0.46A
VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 0.87 S VDS = 10V, ID = 0.46A
1.0 VDS = 24V, VGS = 0V
25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage -100 VGS = -20V
Gate-to-Source Reverse Leakage 100 VGS = 20V
QgTotal Gate Charge 3.3 5.0 ID = 0.91A
Qgs Gate-to-Source Charge 0.48 0.72 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge 1.1 1.7 VGS = 10V, See Fig. 6 and 9
td(on) Turn-On Delay Time 3.9 VDD = 15V
trRise Time 4.0 ID = 0.91A
td(off) Turn-Off Delay Time 9.0 RG = 6.2Ω
tfFall Time 1.7 RD = 16Ω, See Fig. 10
Ciss Input Capacitance 85 VGS = 0V
Coss Output Capacitance 34 pF VDS = 25V
Crss Reverse Transfer Capacitance 15 = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.2 V TJ = 25°C, IS = 0.91A, VGS = 0V
trr Reverse Recovery Time 26 40 ns TJ = 25°C, IF = 0.91A
Qrr Reverse RecoveryCharge 22 32 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
7.3
0.54
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 0.91A, di/dt ≤ 120A/µs, VDD ≤ V
(BR)DSS,
TJ ≤ 150°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Limited by TJmax, starting TJ = 25°C, L = 9.4mH, RG = 25Ω, IAS = 0.9A.
Surface mounted on FR-4 board, t ≤ 5sec.
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IRLML2803PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
0.1 1 10
20μs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
0.1
1
10
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20μs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 0.91A
D
0.1
1
10
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20μs PULSE WIDTH
DS
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IRLML2803PbF
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
20
40
60
80
100
120
140
160
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0.0 1.0 2.0 3.0 4.0 5.0
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 0.91A
V = 24V
V = 15V
D
DS
DS
0.1
1
10
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
0.1
1
10
100
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
1ms
10ms
A
A
J
100μs
10μs
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2803PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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IRLML2803PbF
Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
0
2
4
6
8
10
12
14
16
18
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 0.57A
0.75A
BOTTOM 0.90A
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2803PbF
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
0.08
0.88
0.01
0.89
0.95 B S C
MI L L I ME T E R S
MIN
e
E
E1
D
L
A
A1
A2
c
M
O
B
S
Y
MI NMAX MAX
.036
.0375 B S C
DIME NS IONS
INCH ES
b0.30
bbb
0.15
.008
ccc .006
0.25 BS CL1
L0.40 0.60
.0118 B S C
aaa
0.20
.004
0° 8° 8°0°
2.80
1.20
0
E1
E
D5
6
3
12 ccc C B A
B5
6
e
e1
A2
A
A1
bbb C A B
3X b aaa C
3 S URF 0
3X L
L1
H4
7
2.10
e1 1.90 B S C .075 BSC
.0119
.0032
.111
.083
.048 .055
.119
.103
.0196
.0078
.0039
.044
.0004
.035 .040
.0236.0158
1.02
0.20
0.50
2.64
3.04
1.40
1.12
0.10
0.10
1.90
[.075]
0.95
[.0375]
0.972
[.038]
2.742
[.1079]
0.802
[.031]
R E COMMENDE D F OOT PRINT
3X
3X
NOT E S
1. DIMENSIONING AND TOLERANCING PER AS ME Y14.5M-1994.
4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5 DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6 DI ME N S IONS D AN D E 1 AR E ME AS U R E D AT DAT U M PL ANE H .
2. DIMENSIONS ARE S HOWN IN MILLIMETERS AND INCHES.
3. CONTROLLING DIMENSION: MILLIMET ER.
7 DIMENSION L IS THE LEAD LENGTH FOR SOL DERING T O A SUBSTRAT E.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.
F = IRLML6401
A2001 A27
Notes: This part marking information applies to devices produced after 02/26/2001
ASSEMBLY LOT CODE
LEAD-FREE
DATE CODE
E = IRLML6402
X = PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = IRLML2402
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
Y
82008
32003
12001
YEAR
2002 2
52005
2004 4
2007
2006
7
6
2010 0
2009 9
YEAR Y
C03
WORK
WEEK
01
02
A
W
B
04 D
24
26
25
X
Z
Y
WORK
WEEK W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2010
2009 J
Y51
29
28
30
C
B
D
50 X
I = IRLML0030
J = IRLML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML2060
P = IRLML9301
R = IRLML9303
Cu WIRE
HALOGEN FREE
PART NUMBER
52 Z
DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
2018
2013
2011
2012
2015
2014
2017
2016
2020
2019
W = IRFML8244
V = IRLML6346
U = IRLML6344
T = IRLML6246
S = IRLML6244
Y = IRLML2246
X = IRLML2244
Z = IRFML9244
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2803PbF
Tape & Reel Information
SOT-23
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRLML2803PbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
MS L 1
(per JE DE C
J-S T D-020D
††
)
RoHS c ompliant
Yes
Qualification information
†
Qualification level
Cons umer
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level Micro3™ (SOT-23)
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date Comment
•
Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 7.
•
Added Qualification table -Qual level "Consumer" on page 9.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
4/24/2014
