DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 22 2004 Oct 11
DISCRETE SEMICONDUCTORS
BC549; BC550
NPN general purpose transistors
db
ook, halfpage
M3D186
2004 Oct 11 2
NXP Semiconductors Product data sheet
NPN general purpose transistors BC549; BC550
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
Low noise stages in audio frequency equipment.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC559 an d BC560.
PINNING
PIN DESCRIPTION
1emitter
2base
3collector
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM182
3
2
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BC549C SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54
BC550C
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC549 30 V
BC550 50 V
VCEO collector-emitter voltage open base
BC549 30 V
BC550 45 V
VEBO emitter-base voltage open collector 5 V
ICcollector current (DC) 100 mA
ICM peak collector current 200 mA
IBM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 500 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb ambient temperature 65 +150 °C
2004 Oct 11 3
NXP Semiconductors Product data sheet
NPN general purpose transistors BC549; BC550
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 30 V; IE = 0 A −−15 nA
VCB = 30 V; IE = 0 A; Tj = 150 °C−−5μA
IEBO emitter-b a s e cut-off current VEB = 5 V; IC = 0 A −−100 nA
hFE DC current gain VCE = 5 V; see Fig.2
IC = 10 μA270
IC = 2 mA 420 520 800
VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA 90 250 mV
IC = 100 mA; IB = 5 mA 200 600 mV
VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 700 mV
IC = 100 mA; IB = 5 mA; note 1 900 mV
VBE base-emitter voltage VCE = 5 V; IC = 2 mA; note 2 580 660 700 mV
VCE = 5 V; IC = 10 mA; note 2 −−770 mV
Cccollector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz 1.5 pF
Ceemitter capacitance VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz 11 pF
fTtransition frequency VCE = 5 V; IC = 10 mA;
f = 100 MHz 100 −−MHz
Fnoise figu r e VCE = 5 V; IC = 200 μA;
RS = 2 kΩ; f = 10 Hz to 15.7 kHz −−4dB
VCE = 5 V; IC = 200 μA;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz −−4dB
2004 Oct 11 4
NXP Semiconductors Product data sheet
NPN general purpose transistors BC549; BC550
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
600
200
400
MBH725
102101
hFE
1IC (mA)
10 103
102
VCE = 5 V
BC549C; BC550C.
2004 Oct 11 5
NXP Semiconductors Product data sheet
NPN general purpose transistors BC549; BC550
PACKAGE OUTLINE
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43A 04-06-28
04-11-16
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT5
4
e1e
1
2
3
2004 Oct 11 6
NXP Semiconductors Product data sheet
NPN general purpose transistors BC549; BC550
DAT A SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have change d since this document was published
and may differ in case of multiple devices. The latest product status informati on is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This docum en t con tains da ta from th e pr e liminary spec i f i c ation.
Product data sheet Production This document contains the product specification.
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published in this document, including without limitation
specifications and product description s, at any time and
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditio ns
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliabi lity.
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Quick reference data The Quick reference data is an
extract of the product data gi ven in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name N XP Semiconductors, including new legal
definitions and disclai mers. No changes were made to the technical content, except for package outline
drawings which were upda ted to the latest version.
Printed in The Netherlands R75/04/pp7 Date of release: 2004 Oct 11 Document order number: 9397 750 13569