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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C14A
IDM TC= 25°C, pulse width limited by TJM 56 A
IAR 14 A
EAR TC= 25°C19mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 3.5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 190 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
N-Channel Enhancement Mode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250 µA 500 V
VGS(th) VDS = VGS, ID = 250 µA24V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C 250 µA
RDS(on) VGS = 10 V, ID = 8.4 A 0.40 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IRFP 450 VDSS = 500 V
ID(cont) = 14 A
RDS(on) = 0.40 ΩΩ
ΩΩ
Ω
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
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International standard packages
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Low RDS (on) HDMOSTM process
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Rugged polysilicon gate cell structure
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Low package inductance (< 5 nH)
- easy to drive and to protect
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Fast switching times
Applications
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Switch-mode and resonant-mode
power supplies
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Motor controls
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Uninterruptible Power Supplies (UPS)
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DC choppers
Advantages
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Easy to mount with 1 screw
(isolated mounting screw hole)
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Space savings
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High power density
92604E(5/96)
D (TAB)
Standard Power MOSFET
IXYS reserves the right to change limits, test conditions, and dimensions.
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© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 8.4 A, pulse test 9 .3 S
Ciss 2800 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3 00 p F
Crss 150 pF
td(on) 18 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 14 A 4 7 ns
td(off) RG = 6.2 Ω, (External) 9 2 ns
tf44 ns
Qg(on) 110 150 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 14 A 1 5 2 0 nC
Qgd 50 80 nC
RthJC 0.65 K/W
RthCK 0.24 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 1 4 A
ISM Repetitive; pulse width limited by TJM 56 A
VSD IF = IS, VGS = 0 V, 1. 4 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 5 0 0 ns
IRFP 450
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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