BU406G - ON Semiconductor - searchdatasheet.com

October, 2011 − Rev. 9

1Publication Order Number:

BU406/D

BU406, BU407

NPN Power Transistors

These devices are high voltage, high speed transistors for horizontal

deflection output stages of TV’s and CRT’s.

Features

•High Voltage: VCEV = 330 or 400 V

•Fast Switching Speed: tf = 750 ns (max)

•Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage BU406

BU407

VCEO 200

150

Vdc

Collector−Emitter Voltage BU406

BU407

VCEV 400

330

Vdc

Collector−Base Voltage BU406

BU407

VCBO 400

330

Vdc

Emitter−Base Voltage VEBO 6 Vdc

Collector Current − Continuous

− Peak Repetitive

− Peak (10 ms)

IC7

Adc

Base Current IB4 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25°C

PD60

0.48

W/_C

Operating and Storage Junction

Temperature Storage

TJ, Tstg −65 to 150 _C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 2.08 _C/W

Thermal Resistance, Junction−to−Ambient RqJA 70 _C/W

Maximum Lead Temperature for Soldering

Purposes1/8″ from Case for 5 Seconds

TL260 _C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

NPN SILICON

POWER TRANSISTORS

7 AMPERES − 60 WATTS

150 AND 200 VOLTS

TO−220AB

CASE 221A−09

STYLE 1

http://onsemi.com

MARKING DIAGRAM

BU40x = Specific Device Code

x = 6 or 7

A = Assembly Location

Y = Year

WW = Work Week

G=Pb−Free Package

Device Package Shipping

ORDERING INFORMATION

BU406 TO−220AB 50 Units / Rail

BU406G TO−220AB

(Pb−Free)

50 Units / Rail

BU40xG

AY WW

BU407 TO−220AB 50 Units / Rail

BU407G TO−220AB

(Pb−Free)

50 Units / Rail

BU406, BU407

http://onsemi.com

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 1) BU406

(IC = 100 mAdc, IB = 0) BU407

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

200

150

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEV, VBE = 0)

(VCE = Rated VCEO + 50 Vdc, VBE = 0)

(VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C)

ÎÎÎÎÎ

ICES

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

0.1

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current BU406, BU407

(VEB = 6 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 5 Adc, IB = 0.5 Adc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 5 Adc, IB = 0.5 Adc)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

1.2

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Forward Diode Voltage

(IEC = 5 Adc) “D” only

ÎÎÎÎÎ

VEC

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

ÎÎÎÎ

Volts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current−Gain − Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz)

ÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

ÎÎÎÎÎ

Cob

ÎÎÎ

−

ÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load Crossover Time

(VCC = 40 Vdc, IC = 5 Adc, IB1 = IB2 = 0.5 Adc, L = 150 mH)

ÎÎÎÎÎ

ÎÎÎ

−

ÎÎÎÎ

−

ÎÎÎ

0.75

ÎÎÎÎ

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 1%.

100

0.1

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.2 0.3 0.5 0.7 1 5 7 10

hFE, DC CURRENT GAIN

TJ = 100°C

25°C

VCE = 5 V

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

720

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

IC, COLLECTOR CURRENT (AMP)

3 5 30 50 70 200

0.1

TC = 25°C

Figure 2. Maximum Rated Forward

Bias Safe Operating Area

100

BU407

BU406

BU406, BU407

http://onsemi.com

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.036 0.64 0.91

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.161 2.80 4.10

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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BU406/D

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