BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV's and CRT's. Features * * * * High Voltage: VCEV = 330 or 400 V Fast Switching Speed: tf = 750 ns (max) Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A Pb-Free Packages are Available* http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating BU406 BU407 VCEO 200 150 Vdc Collector-Emitter Voltage BU406 BU407 VCEV 400 330 Vdc Collector-Base Voltage BU406 BU407 VCBO 400 330 Vdc VEBO 6 Vdc Collector Current - Continuous - Peak Repetitive - Peak (10 ms) IC 7 10 15 Adc Base Current IB 4 Adc Total Device Dissipation @ TC = 25_C Derate above 25C PD 60 0.48 W W/_C TJ, Tstg -65 to 150 _C Emitter-Base Voltage Operating and Storage Junction Temperature Storage NPN SILICON POWER TRANSISTORS 7 AMPERES - 60 WATTS 150 AND 200 VOLTS TO-220AB CASE 221A-09 STYLE 1 1 Characteristics Symbol Max Unit RqJC 2.08 _C/W Thermal Resistance, Junction-to-Ambient RqJA 70 _C/W Maximum Lead Temperature for Soldering Purposes1/8 from Case for 5 Seconds TL 260 _C 3 MARKING DIAGRAM BU40xG AY WW THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case 2 BU40x = Specific Device Code x = 6 or 7 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device Package Shipping BU406 TO-220AB 50 Units / Rail BU406G TO-220AB (Pb-Free) 50 Units / Rail BU407 TO-220AB 50 Units / Rail BU407G TO-220AB (Pb-Free) 50 Units / Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 9 1 Publication Order Number: BU406/D BU406, BU407 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII III IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII IIIIIII IIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 200 150 - - - - Vdc - - - - - - 5 0.1 1 IEBO - - 1 mAdc Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) VCE(sat) - - 1 Vdc Base-Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) VBE(sat) - - 1.2 Vdc VEC - - 2 Volts fT 10 - - MHz Cob - 80 - pF tc - - 0.75 ms OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0) BU406 BU407 Collector Cutoff Current (VCE = Rated VCEV, VBE = 0) (VCE = Rated VCEO + 50 Vdc, VBE = 0) (VCE = Rated VCEO + 50 Vdc, VBE = 0, TC = 150_C) Emitter Cutoff Current (VEB = 6 Vdc, IC = 0) ICES BU406, BU407 mAdc ON CHARACTERISTICS (Note 1) Forward Diode Voltage (IEC = 5 Adc) "D" only DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) SWITCHING CHARACTERISTICS Inductive Load Crossover Time (VCC = 40 Vdc, IC = 5 Adc, IB1 = IB2 = 0.5 Adc, L = 150 mH) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 1%. 100 50 30 TJ = 100C IC, COLLECTOR CURRENT (AMP) hFE, DC CURRENT GAIN 70 10 25C VCE = 5 V 20 10 0.1 2 3 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) 5 7 10 dc BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1 0.1 TC = 25C 2 Figure 1. DC Current Gain 3 BU407 BU406 20 30 5 7 10 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 2. Maximum Rated Forward Bias Safe Operating Area http://onsemi.com 2 200 BU406, BU407 PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 3 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BU406/D