SBE D MM 7929237 004158? 289 MISGTH f SGS-THOMSON FuIS- SF iMicroztectnomies BZX 85 C 2V7 200 SG S-THOMSON ZENER DIODES a LARGE VOLTAGE RANGE : 2.7V TO 200V a DOUBLE SLUG TYPE CONSTRUCTION a PRO ELECTRON REGISTRATION : 2.7V TO 110V a CECC FOR TYPES : 2.7V TO 82V a (LEVEL QUALITY ASSESSMENT : L) A we \ DESCRIPTION DO 41 1.3W hermetically sealed glass silicon Zener (Glass) diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit Prot Power Dissipation* Tamb = 25C 1.3 Ww lzm Continuous Reverse Current Tamp = 25C See page 2 mA Izsm Peak Reverse Current Tamb = 25C See page 2 mA Tstg Storage and Junction Temperature Range - 5510175 C y, Th Maximum Lead Temperature for Soldering during 10s at 4mm 230 C from Case THERMAL RESISTANCE Symbol Parameter Value Unit Rth q-a) | Junction-ambient* 110 oCiW * On infinite heatsink with 4mm fead length. July 1989 1/4 111 SbE D MM 7929237 0041588 115 MESGTH BZX 5 UG 2V/ > 200 S G S-THOMSON ELECTRICAL CHARACTERISTICS (Tamp = 25C unless otherwise specified) Types Varilzr* | rzt/lzt| tzr tzK/IzK Vz In/Va Vr lzm Izsu** Tamb 25C 150C min max max max min max max max (V) (Q)__| (mA) | (2) (mA) | (10*c) (uA) a) (mA) (mA) O A BZX 85 C 2V7 25 29 20 80 400 1 -8 ~5 150 300 1 370 2874 A BZX 85 3V0 28 32 20 80 400 1 -8 -5 100 300 1 340 2604 oeA BZX 85 C 3V3 31 35 20 80 400 1 -68 -5 40 200 1 320 2381 O*A BZX 85 C 3V6 34 38 20 70 $00 1 ~8 -5 20 50 1 290 2193 Oo A BZX 85 C 3V9 37 44 16 60 00 1 -7 -2 10 20 1 280 2033 OA BZX 85C 4V3 40 46 13 50 500 1 - 1 3 10 1 250 1842 Oe A BZX 85 C 4V7 44 50 13 45 500 1 -3 4 3 10 1 215 1667 OeA BZX 85 C 5V1 48 54 10 45 500 1 -1 4 1 10 15 200 1543 &*A BZX 85 C 5V6 52 60 7 45 400 1 0 45 1 10 2 190 1389 QA BZX 85C 6V2 58 66 4 35 300 4 1 55 1 10 3 170 1263 0 A BZX 85 C 6V8B 64 72 35] 35 300 1 15 6 1 10 4 155 1157 Oe A BZX 85 C 7V5 70 79 3 35 200 05 2 65 1 10 45 140 1055 O&A BZX 85C BV2 77 87 5 25 200 O05 3 7 1 10 62 130 958 OA BZX 85 C 9V1 85 96 5 25 200 05 35 75 1 10 68 120 868 &eA BZX B5C 10 94 106 ? 25 200 O05 4 8 0.5 10 75 105 786 OA BZX 85C 11 104 116 8 20 300 05 45 8 05 10 82 97 718 Oe A BZX 85C 12 114 127 9 20 350 05 45 85 05 10 91 88 656 Qe A BZX 85C 13 124 144 10 20 400 05 5 a5 05 10 10 79 591 Qe A BZX 85 C 15 138 156 15 15 500 05 5 9 05 10 11 71 534 Qe A BZX 85 C 16 153 174 15 15 500 O05 55 9 05 10 12 66 487 QeA B2X 85 C 18 168 191 20 15 500 05 6 9 O5 10 13 62 436 OeA BZX 85 C 20 188 212 24 10 600 O05 6 9 05 10 16 56 393 O*A BZX 85 C 22 208 233 25 10 600 O05 6 95 os 10 16 52 358 OA BZX 85 C 24 228 256 25 10 600 05 6 95 05 10 18 47 326 Ge A BZX 85C 27 254 289 30 8 750 025 6 95 05 10 20 41 288 OA BZX 85 C 30 28 32 30 8 1000 025 6 95 0.5 10 22 36 260 Oe A BZX 85 C 33 31 35 35 8 1000 025 6 9.5 05 10 24 33 238 eA BZX 85C 36 34 38 40 8 1000 025 6 95 05 10 27 30 219 A BZX 85C 39 37 41 50 6 1000 O25 6 95 05 10 30 28 203 Oe A BZX 85 C 43 40 46 50 6 1000 025 6 95 05 10 33 26 181 QA BZX 85 C 47 44 50 90 4 1500 025 6 95 05 10 36 23 167 QeA BZX85C 451 48 54 115 4 1500 025 6 95 05 10 39 21 154 Oe A BZX 85 C 56 52 60 120 4 2000 025 6 95 a5 10 43 19 139 QeA BZX 85 C 62 58 66 125 4 2000 0.25 6 95 05s 10 47 16 126 o BZX 85 C 68 64 72 130 4 2000 0.25 6 95 05 10 51 15 176 6 B2xX 85 C 75 70 80 135 4 2000 025 6 95 0.5 10 56 14 104 BZX 85 C 82 77 87 200 27/3000 025 7 12 0.5 10 62 12 96 BZX 85 C 91 a5 96 250 2.7| 3000 025 7 12 05 10 68 10 87 BZX 85 C 100 94 106 350 27/3000 025 7 12 05 10 75 94 79 BZx 85 C 110 |104 116 450 27} 4000 025 7 12 05 10 82 8.6 72 BZX 85C 120 |114 127 550 2 4500 025 7 12 05 10 91 7.8 66 BZxX 85 C 130 |124 141 700 2 5000 025 7 12 05 10 | 100 70 59 BZX 85 C 150 [138 156 1000 2 6000 025 7 12 a5 10 | 110 64 3 BZX 85 C 160 | 153 171 1100 15/6500 025 7 12 a5 10 | 120 58 49 BZX 85 C 180 | 168 191 4200 15] 7000 025 7 12 05s 10 130 52 44 BZX 85 C 200 | 180 212 1500 15] 8000 025 7 12 05 10 150 47 39 * Pulse test 20ms < tp < 50ms ** Rectangular waveform (tp = 10ms) A Devices under CCQ/CCT Devices under CCQ/CECC CNES qualified product. The regulation voltages are defined according to the E24 series Forward voltage drop Vr < 1V (Tams = 25 C, Ip = 0 2A) 2/4 &77 SSS:THoMson MICROELECTRONICS 112 SbE D MM 75929237? 0041589 SG S=-THOMSON P (Ww) 4.5 1.0 0.5 Tamb (C) 0 25 50 75 100 125 150 175 Fig.4 - Power dissipation versus ambient temperature on infinite heatsink, 2th (% Rip} 400 50 t (s) 4074 4 40 0 103 49-2 102 Fig.d - Transient thermal impedance junction-ambient versus pulse duration. O51 MESGTH BZX 85 C 2V7 200 Aun (C/W) 160 4120 BO 40 0 5 10 15 20 25 Fig.2 - Thermal resistance versus lead length on infinite heatsink. INFINITE HEATSINK L Test point of teonnexion Try_[A) Vzt <8-8V == Vz7 2 5.8 ag-4 4a-2 Va } Ven (v) 19-3 i 40 400 500 0.7 0.8 0.9 4 1.4 1.2 Fig.4 - Capacitance versus reverse Fig.5 Peak forward current applied voltage. versus peak forward voltage drop {typical values) . 3/4 E77 SGS-THOMSON T7 microuscrRomes 113 SBE D MM 7929237 00415590 873 MSGTH BZX 85 C 2V7 200 SG S-THOMSON Ip (ma) Azt (Q) 103 ZT Ty = 150 C Va = 0.75 Vor i 102 1o74 10-2 40 1073 Izt Vzt ) zt = Vat to74 1 10 102 4 10 102 Fig.8 - Reverse current versus regulation Fig.7 - Differential resistance versus voltage (Typical Values) regulation voltage (Typical Values) 403 Pzsgm_ (W) Ty anatial = 25 OC 402 10 tp (ms) i 407 4 4 10 402 Fag.8 - Peak pulse power versus pulse duration (rectangular waveform) (maximum values) . PACKAGE MECHANICAL DATA DO 41 (Glass) Cooling method by convection and conductron Marking clear ring at cathode end, Weight 0349 44 {7 SGS-THOMSON If imenostecrnomes 114