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ON Semiconductor
Master Components Selector Guide
SG388/D
Rev. 12, June−2011
AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog
Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation;
Custom; DC−DC Controllers, Converters, and Regulators; Digital
Potentiometers; Diodes and Rectifiers; Drivers; DSP Systems;
EMI/RFI Filters; IGBTs and FETs; Interfaces; Memory; Standard Logic;
Thermal Management; Thyristors; Voltage and Current Management
SCILLC, 2011
Previous Edition 2010
“All Rights Reserved”
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ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ARKonline, BelaSigna†, BELASIGNA, dBCOOL, DBCOOL, EMI−LATOR, Ezairo†, EZAIRO, FOUNDATION, FRONTWAVE,
GENBlue, GENBlue & Design, GreenPoint, GreenPoint & Design, HDTMOS, HEARPHONE, HVTMOS, MOSORB,
PARAGON, PICOGUARD, PRAETORIAN, PULSECORE, QUAD−MODE, SENSEFET, SignaKlara†, SIGNAKLARA,
SMALLBLOCK, SOUND DESIGN, SOUND DESIGN & Design, SOUNDFIT, SOUNDFIT & Design, SURMETIC,
thinSTAX Design, TMOS, UNIWATT, WAVEFET and XPRESSARRAY are registered trademarks of Semiconductor
Components Industries, LLC (SCILLC).
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
AnyLevel, DPP, EASY SWITCHER, ECLinPS, ECLinPS Lite, ECLinPS MAX, ECLinPS Plus, EpiBase, FASTMOS,
FLEXMOS, FOUNDRYPLUS, From−the−Socket−to−the−Pocket, FULLPAK, GigaComm, HDPlus, ICEPAK, MECL,
MEGAHERTZ, MicroIntegration, MicroLeadless, MiniGate, MiniMOS, MiniMOSORB, Multi−Pak, NETRANS, NOCAP,
ON−Demand, Orela†, ORELA, PInPAK, PMODE, PowerBase, POWERSENSE, POWERTAP, PureEdge, Quake,
Quantum Charge Programmable, SLEEPMODE, SMARTDISCRETES, SMART HotPlug, SMARTswitch, Soft−Skip,
SUPERBRIDGES, SuperLock, ThermalTrak, Thermopad, Thermowatt, TIMING SAFE, Timing−Safe†, TMOS Stylized,
TOCCATA, Toccata Plus†, TOCCATA PLUS, Cool, uCool, VPower and Z−Switch are trademarks of Semiconductor
Components Industries, LLC (S
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Table of Contents
Page
AC−DC Controllers and Regulators 5...
Off−Line Controllers 8.............................
Off−Line Regulators 11............................
Power Factor Controllers 10........................
Secondary Side Controllers 10.....................
Amplifiers and Comparators 13........
Audio Amplifiers 16..............................
Compandors 16.................................
Comparators 16.................................
Operational Amplifiers 17.........................
Video Amplifiers 19..............................
Analog Switches 21...................
Audio Switches 24................................
Data Switches 24.................................
Signal Switches 25................................
Bipolar Transistors 27.................
Bipolar Power Transistors 30.......................
Discrete Transistors 31..........................
Darlington Transistors 46........................
Audio 38......................................
Electronic Lamp Ballasts 39......................
Small−Signal Bipolar Transistors 40.................
General−Purpose Transistors 40..................
General−Purpose Multiple Transistors 45...........
Low Noise and Good hFE Linearity 46.............
Darlington Transistors 46........................
High Current Transistors 47......................
High Voltage Transistors 49......................
RF Transistors 50...............................
Switching Transistors 50.........................
Multiple Switching Transistors 51..................
Digital Transistors (Bias Resistor Transistors) 52....
Dual Digital Transistors
(Bias Resistor Transistors) 54..................
Combinational Digital Transistors
(Bias Resistor Transistors) 55..................
Complex Digital Transistors 57....................
Low Saturation Voltage Transistors 58.............
Load Switch Transistors 59.......................
Clock and Data Distribution 61.........
Arithmetic Functions 64............................
Drivers and Fanout Buffers 65......................
Flip−Flops, Latches and Registers 65................
Logic Gates 74...................................
Multiplexers and Crosspoint Switches 75.............
Serial/Parallel Converters 77.......................
Skew Management 78.............................
Translators 78....................................
Page
Clock Generation 81..................
Crystal Oscillators 84..............................
Phase/Frequency Detectors 85.....................
PLL Clock Generators 85..........................
Spread Spectrum EMI Reduction Clocks 86..........
VCOs 88........................................
Zero Delay Buffers 89.............................
Custom 91............................
Digital ASICs 94.................................
Custom Foundry Services 94......................
DC−DC Controllers, Converters, and
Regulators 95........................
Battery Charge Controllers 98......................
Charge Pumps 98................................
DC−DC Controllers 98.............................
DC−DC Converters 100...........................
Linear Voltage Regulators 103......................
Single Linear Voltage Regulators 103.............
Dual Linear Voltage Regulators 110...............
PoE Controllers 111...............................
Digital Potentiometers 113.............
Digitally Programmable Potentiometers 116..........
Diodes and Rectifiers 119.............
Tuning and Switching Diodes 122...................
Abrupt Junction Tuning Diodes 122................
Hyper−Abrupt Junction Tuning Diodes 122.........
Schottky Diodes 123............................
Pin Switching Diodes 125........................
General Purpose Signal & Switching Diodes 126....
Zener Diodes − Regulation in Axial Leads 128........
Zener Diodes − Regulation in Surface Mount 130......
Dual Zeners − Duals in Surface Mount 136...........
TVS Diodes − In Axial Leads 139...................
TVS Diodes − In Surface Mount 142.................
ESD Protection Diodes 155........................
TVS/ESD Protection 175...........................
Application Specific Rectifiers 187...................
Low VF Schottky 187............................
Low Leakage Schottky 188.......................
High Voltage Schottky 188.......................
MEGAHERTZ188............................
UltraSoft Rectifiers 188..........................
Energy Rated Rectifiers 188......................
SCHOTTKY Rectifiers 189.........................
Surface Mount Schottky 189......................
Axial Lead Schottky 192.........................
TO−220 Type Schottky 193......................
TO−218 Types and TO−247 Schottky 195..........
UltraSoft Rectifiers 195............................
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Page
Diodes and Rectifiers (cont.)
Ultrafast Rectifiers 196............................
Surface Mount Ultrafast 196......................
Axial Lead Ultrafast 197.........................
TO−220 Type Ultrafast 198.......................
TO−218 Types and TO−247 Ultrafast 198..........
Fast Recovery Rectifiers/General
Purpose Rectifiers 199............................
Drivers 201...........................
Display/LED Drivers 204...........................
Load/Relay Drivers
Load Drivers 207...............................
Relay Drivers 207...............................
MOSFET/IGBT Drivers 208........................
Motor Drivers 208.................................
DSP Systems 211.....................
Audio DSP Systems 214...........................
EMI/RFI Filters 215....................
Audio Filters 218..................................
Data Filters 218..................................
IGBTs and FETs 221...................
IGBTs 224......................................
JFETS 224.....................................
MOSFETs 224..................................
Protected MOSFETs 236.........................
Interfaces 237........................
Data Transmitters and Transceivers 240............
HART and MAU 240...........................
LIN and CAN Transceivers 240..................
I/O Expanders 241...............................
Modulators/Demodulators 241.....................
PLC Modems 241...............................
Sensor Interfaces 241............................
SMART and SIM Card Interfaces 242...............
Page
Memory 243..........................
NVRAM 246.....................................
Parallel EEPROM 249.............................
Serial EEPROM 246..............................
SRAM 249.......................................
Standard Logic 251...................
Arithmetic Functions 254...........................
Buffers 255......................................
Flip−Flops 260...................................
Latches and Registers 261.........................
Logic Gates 263..................................
Multiplexers 271..................................
Multivibrators 273.................................
Transceivers 273.................................
Translators 274...................................
Thermal Management 277.............
Fan Controllers 280...............................
Temperature Sensors 281..........................
Thyristors 283........................
Programmable Unijunction Transistors (PUTs) 286....
SIDACs 286....................................
Silicon Controlled Rectifiers (SCRs) 286.............
Thyristor Surge Protection Devices (TSPDs) 287.....
TRIACs 288.....................................
Voltage and Current Management 291..
Current Protection 294.............................
Voltage Protection 294............................
Voltage References 294...........................
Voltage Supervisors 295...........................
Index 297.............................
NOTE: The Tape & Reel Specification information has been
moved to its own publication. Please see
ON Semiconductor brochure, BRD8011/D, for information
on Tape & Reel.
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AC−DC Controllers and Regulators
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ON Semiconductor Selector Guide − AC−DC Controllers and Regulators
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AC−DC Controllers and Regulators
Table of Contents
Page
Off−Line Controllers 8...............................
Off−Line Regulators 11..............................
Power Factor Controllers 10..........................
Secondary Side Controllers 10........................
ON Semiconductor Selector Guide − AC−DC Controllers and Regulators
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OFF−LINE CONTROLLERS
Device Topology Control Mode fsw Typ (kHz) Stand−by Mode
UVLO
(V)
Short−Circuit
Protection Latch
Soft
Start VCC Max (V) Drive Cap. (mA) Package
CS5124 Flyback Current Mode 400 No Yes No No Yes 75 200 SOIC−8
MC33060A Flyback Voltage Mode 200 No Yes No No Yes 42 200 PDIP−14; SOIC−14
MC33067 Flyback Voltage Mode 1000 No Yes Yes No Yes 20 200 / 200 PDIP−16; SOIC−16W
MC33364 Flyback Current Mode Yes Yes No No No 16 220 / 600 SOIC−16; SOIC−8
MC44603A Flyback Current/Voltage
Mode Up to 250 Yes 9 V Yes Yes Yes 18 750 / 750 SOIC−16W
NCL30000 Flyback Up to 300 20 500 / 800 SOIC−8
NCL30001 Flyback Current Mode Up to 150 20 1000 / 1000 SOIC−16
NCP1200 Flyback Current Mode 40; 60; 100 Yes No Yes No No 16 250 / 250 PDIP−8; SOIC−8
NCP1203 Flyback Current Mode 40; 60; 100 Yes Yes Yes No No 16 250 PDIP−8; SOIC−8
NCP1207A Flyback Current Mode Up to 1000 Yes yes Yes Yes Yes 16 500 / 500 PDIP−8; SOIC−8
NCP1207B Flyback Current Mode Up to 1000 Yes Yes Yes Yes Yes 18 500 / 500 SOIC−8
NCP1216 Flyback Current Mode 65; 100; 133 Yes No Yes No No 16 500 PDIP−8; SOIC−8
NCP1216A Flyback Current Mode 65; 100; 133 Yes No Yes No Yes 16 500 PDIP−8; SOIC−8
NCP1217 Flyback Current Mode 65; 100; 133 Yes Yes Yes Yes No 16 500 PDIP−8; SOIC−8
NCP1217A Flyback Current Mode 65; 100; 133 Yes Yes Yes Yes Yes 16 500 PDIP−8; SOIC−8
NCP1218 Flyback Current Mode 65 Yes 9.4 V Yes Yes Yes 20 500 / 800 SOIC−8
NCP1219 Flyback Current Mode 65; 100 Yes 9.4 V Yes Yes Yes 20 500 / 800 SOIC−8
NCP1230 Flyback Current Mode 65; 100; 133 Yes Yes Yes Yes Yes 18 500 / 800 PDIP−8; SOIC−8
NCP1234 Flyback Current Mode 65 9.5 Yes Yes Yes 28 500 / 500 SOIC−8
NCP1236 Flyback Current Mode 65 Yes Yes Yes 28 500 / 500 SOIC−8
NCP1237 Flyback Current Mode 65 Yes Yes Yes 28 1000 / 1000 SOIC−8
NCP1238 Flyback Current Mode 65 Yes Yes Yes 28 1000 / 1000 SOIC−8
NCP1250 Flyback Current Mode 65 Yes 8.8 V Yes Yes Yes 28 300 / 500 TSOP−6
NCP1251 Flyback Current Mode 65 Yes 8.8 Yes Yes Yes 28 300 / 500 TSOP−6
NCP1271 Flyback Current Mode 65; 100 Yes Yes Yes Yes Yes 20 500 / 800 PDIP−8; SOIC−8
NCP1288 Flyback Current Mode 65 10 V Yes Yes Yes 28 1000 / 1000 SOIC−8
NCP1308 Flyback Current Mode Variable Yes Yes Yes Yes Yes 16 500 / 500 SOIC−8
NCP1337 Flyback Current Mode Variable Yes Yes Yes Yes Yes 20 500 / 500 PDIP−8; SOIC−8
NCP1338 Flyback Current Mode Variable Yes Yes Yes Yes Yes 20 500 / 500 SOIC−8
NCP1351 Flyback Current Mode Variable No Yes Yes Yes No 28 400 / 400 PDIP−8; SOIC−8
NCP1377 Flyback Current Mode Variable Yes Yes No Yes Yes 16 500 / 500 PDIP−8; SOIC−8
NCP1379 Flyback Current Mode Variable Yes 9Yes Yes Yes 28 500 / 800 SOIC−8
NCP1380 Flyback Current Mode Variable Yes 9Yes No;
Yes Yes 28 500 / 800 SOIC−8
ON Semiconductor Selector Guide − AC−DC Controllers and Regulators
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OFF−LINE CONTROLLERS (continued)
Device PackageDrive Cap. (mA)VCC Max (V)
Soft
Start
Latch
Short−Circuit
Protection
UVLO
(V)
Stand−by Modefsw Typ (kHz)Control ModeTopology
NCP1381 Flyback Current Mode Variable Yes Yes Yes Yes Yes 20 500 / 800 SOIC−14
NCP1382 Flyback Current Mode Variable Yes Yes Yes Yes Yes 20 500 / 800 SOIC−14
NCP1562 Flyback Voltage Mode Up to 500 No Yes Yes Yes Yes 20 2500 / 2500 SOIC−16; TSSOP−16
NCV3843B Flyback Current Mode 52 No Yes Yes No Yes 30 200 / 200 SOIC−14; SOIC−8
UC2842B Flyback Current Mode 52 No Yes Yes No No 30 200 / 200 PDIP−8; SOIC−14; SOIC−8
UC2843B Flyback Current Mode 52 No Yes Yes No No 30 200 / 200 PDIP−8; SOIC−14; SOIC−8
UC2844B Flyback Current Mode 52 No Yes Yes No No 30 200 / 200 PDIP−8; SOIC−14; SOIC−8
UC2845B Flyback Current Mode 52 No Yes Yes No No 30 200 / 200 PDIP−8; SOIC−14; SOIC−8
UC3842B Flyback Current Mode 52 No Yes Yes No No;
Yes 30 200 / 200 PDIP−8; SOIC−14; SOIC−8
UC3843B Flyback Current Mode 52 No Yes Yes No No;
Yes 30 200 / 200 PDIP−8; SOIC−14; SOIC−8
NCP1252 Flyback; Forward Current Mode Up to 500 Yes 9 to 10 V
(typ) Yes Yes Yes 28 500 / 800 SOIC−8
NCP1294 Flyback; Forward;
Half−Bridge; Step−Down;
Step−Up
SOIC−16; TSSOP−16
CS51221 Forward Voltage Mode Up to 1000 No Yes No Yes Yes 15 1000 SOIC−16
NCP1392 Half−Bridge Current Mode 250 No 9 V No No Yes 16 500 / 1000 SOIC−8
NCP1393 Half−Bridge Current Mode 250 No 9 V No No Yes 16 500 / 1000 SOIC−8
NCP1910 Half−Bridge Current Mode Up to 500 Yes 9/10.4 Yes Yes Yes 20 500 / 1000 SOIC−24
MC33025 Push−Pull Current / Voltage
Mode 1000 No Yes Yes No Yes 30 200 / 200 SOIC−16W
NCP1395 Push−Pull Voltage Mode 1000 Yes Yes Yes Yes Yes 20 180 / 180 PDIP−16; SOIC−16
NCP1396 Push−Pull Voltage Mode Up to 500 Yes Yes Yes Yes Yes 20 500 / 1000 SOIC−16
MC34060A Voltage Mode 200 No Yes No No 42 200 PDIP−14; SOIC−14
NCP1397 9.5 /
10.5 Yes Yes Yes 20 500 / 1000 SOIC−16
UC3844B Current Mode 52 No Yes Yes No No;
Yes 25 200 / 200 PDIP−8; SOIC−14; SOIC−8
UC3845B Current Mode 52 No Yes Yes No No;
Yes 25 200 / 200 PDIP−8; SOIC−14; SOIC−8
ON Semiconductor Selector Guide − AC−DC Controllers and Regulators
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POWER FACTOR CONTROLLERS
Device PFC Mode
Frequency
Operation
Control
Mode Topology fSW Typ (kHz)
VCC Max
(V)
Drive Cap.
(mA) UVLO Latch UVP Inhibition Package
NCL30001 CCM Fixed Current
Mode Flyback Up to 150 20 1000 / 1000 SOIC−16
NCP1650 CCM Fixed Current
Mode Step−Up 25 − 250 20 1500 / 1500 10 − 10.5 Yes No Yes SOIC−16
NCP1653 CCM Fixed Current
Mode Step−Up 67; 100 18 1000 / 1000 8.7 − 13.25 Yes Fixed Yes PDIP−8; SOIC−8
NCP1654 CCM Fixed Current
Mode Step−Up 65000; 133000;
200000 20 1500 / 1500 10.5 − 13.75 No Yes Yes SOIC−8
NCP1910 CCM Variable Current
Mode Half−Bridge Up to 500 20 500 / 1000 9/10.4 Yes Yes Yes SOIC−24
NCP1652 CCM; DCM Fixed Current
Mode Step−Down 100; 100000 20 1 9.3 − 11.3 Yes Yes SOIC−16; SOIC−20W
MC33260 CRM Variable Voltage
Mode Step−Up Variable 16 500 / 500 8.5 − 11 Yes Fixed Yes PDIP−8; SOIC−8
MC33262 CRM Variable Current
Mode Step−Up Variable 30 500 / 500 8 − 13 Yes No Yes PDIP−8; SOIC−8
MC33368 CRM Variable Current
Mode Step−Up Variable 16 1000 / 1000 8.5 − 13 Yes No Yes SOIC−16
NCL30000 CRM Variable Flyback Up to 300 20 500 / 800 Yes Yes SOIC−8
NCP1607 CRM Variable Voltage
Mode Step−Up Variable 20 500 / 800 9.5 − 12 V Yes Yes Yes SOIC−8
NCP1608 CRM Variable Voltage
Mode Step−Up Variable 20 500 / 800 9.5−12 No Yes No SOIC−8
NCP1631 CRM Variable Voltage
Mode Step−Up 20 500 / 500 9.5 − 12 V Yes Yes SOIC−16
NCP1601 CRM; DCM Fixed; Variable Voltage
Mode Step−Up Up to 400 18 500 / 800 9 − 10.5; 9 −
13.75 Yes Fixed PDIP−8; SOIC−8
NCP1605 DCM Fixed Voltage
Mode Step−Up Up to 250 20 500 / 800 9 − 15 Yes Fixed; Yes Yes SOIC−16
MC34262 Current
Mode Boost 30 500 / 500 Yes Fixed No Yes PDIP−8; SOIC−8
SECONDARY SIDE CONTROLLERS
Device Description VCC Max (V) Vref Typ (V) ICC Max (A) TA Min (5C) TA Max (5C) Package
NCP4303 Universal Synchronous Rectification Driver 30 SOIC−8
NCP4330 Secondary Side Synchronous Controller 20 2.5 0.02 −40 125 SOIC−8
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OFF−LINE REGULATORS
Device
Control
Mode
fsw Typ
(kHz)
fJitter
Typ (%)
Stand−by
Mode
RDS(ON)
Typ (W)
V(BR)DSS
Max (V)
IPeak
(mA)
HV Start−
up Min
(V)
DSS
(mA) UVLO
Short
Circuit
Protection
Over Power
Comp. Brown−out Latch Package Type
NCP1010 Current
Mode 65; 100; 130 Yes Yes 25 700 100 Yes 8.5 Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1011 Current
Mode 65; 100; 130 Yes Yes 25 700 250 Yes 8.5 Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1012 Current
Mode 65; 100;
130; 133 Yes Yes 11 700 250 Yes 8Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1013 Current
Mode 65; 100;
130; 133 Yes Yes 11 700 350 Yes 8Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1014 Current
Mode 65; 100 Yes Yes 11 700 450 Yes 8Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1015 Current
Mode 65; 100 Yes Yes 11 700 450 Yes 8Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1027 Current
Mode 65; 100 Yes Yes 5.6 700 800 Yes N/A Yes Yes Yes Yes Yes PDIP−8
NCP1028 Current
Mode 65; 100 Yes Yes 5.6 700 800 Yes N/A Yes Yes Yes Yes No PDIP−8
NCP1050 Gated
Oscillator 44; 100; 136 Yes Yes 30 700 100 Yes 6.3 Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1051 Gated
Oscillator 44; 100; 136 Yes Yes 30 700 200 Yes 6.3 Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1052 Gated
Oscillator 44; 100; 136 Yes Yes 30 700 300 Yes 6.3 Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1053 Gated
Oscillator 44; 100; 136 Yes Yes 15 700 400 Yes 6.3 Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1054 Gated
Oscillator 44; 100; 136 Yes Yes 15 700 530 Yes 6.3 Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
NCP1055 Gated
Oscillator 45.5; 100;
140 Yes Yes 15 700 680 Yes 6.3 Yes Yes No No Yes PDIP−8; SOT−223−4
/ TO−261−4
MC33363A Voltage
Mode 285 No No 14 700 400 Yes No Yes No No No No SOIC−16W
MC33363B Voltage
Mode 285 No No 14 700 400 Yes No Yes No No No No SOIC−16W
NCP1030 Voltage
Mode 300 No No 4.1 200 515 Yes 12.5 Yes No No No Yes Micro8
NCP1031 Voltage
Mode Up to 1000 No No 2.1 200 1050 Yes 16 Yes No No No Yes DFN−8; SOIC−8
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Amplifiers and Comparators
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ON Semiconductor Selector Guide − Amplifiers and Comparators
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Amplifiers and Comparators
Table of Contents
Page
Audio Amplifiers 16.................................
Compandors 16....................................
Comparators 16....................................
Operational Amplifiers 17............................
Video Amplifiers 19.................................
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16
AUDIO AMPLIFIERS
Device Class Output Power Typ (W)
Output
Type
Efficiency Typ
(%)
ton Typ
(ms) THD + N Typ (%) IQ Typ (mA) ISD Typ (nA) Package
NCP2809 AB 0.135 −63 285 1.5 10 Micro10; UDFN−10
NCP2811 AB 0.11 −1 0.01 6 10 Flip−Chip−12; TSSOP−14; WQFN−12
NCP2890 AB −BTL 63 285 0.02 1.5 10 Flip−Chip−9; Micro8
NCP2892 AB 1.3 BTL 63 90 0.01 1.5 10 Flip−Chip−9
NCP2892B AB 1.3 BTL 63 90 0.01 1.5 10 Flip−Chip−9
NCP2990 AB 1.3 BTL 63 70 0.01 1.7 10 Flip−Chip−9
NCP2991 AB 1.35 BTL 64 30 0.015 1.8 20 Flip−Chip−9
NCP4894 AB −Differential 64 140 0.01 1.9 20 DFN−10; Flip−Chip−9; Micro10
NCS2211 AB 1.5 BTL 63 0.001 0.2 20 1000 DFN−8; SOIC−8
NCP2704 D 1.4 Differential 87 1 0.1 3.6 100 Flip−Chip−20
NCP2820 D 2.12; 2.19 Differential 87; 90 0.001; 1; 9 0.05 2.2 300 DFN−8; Flip−Chip−9
NCP2823 D 1.5; 3 BTL 90; 92 7.4 0.08 1.8; 2.6 10 Flip−Chip−9
NCP2824 D 1.2 BTL 86 7.4 0.06 2.2 10 Flip−Chip−9
NCS8353 D −BTL 83 450 0.03 33 0.1 QFN−32
NLMD5820 D −Differential 87 0 0.05 2.2 300 UDFN−16
COMPANDORS
Device Channels VCC Min (V) VCC Max (V) ICC Max (mA) THD Typ (%) en Typ (μV) Vref (V) TA Min (5C) TA Max (5C) Package
NE570 2 6 24 4.3 0.3 20 1.8 0 70 SOIC−16W
SA571 2 6 18 4.3 0.5 20 1.8 −40 85 PDIP−16; SOIC−16W
SA572 2 6 22 6.3 0.05 6 2.5 −40 85 PDIP−16; SOIC−16W; TSSOP−16
SA575 2 3 7 4.2 0.12 6 2.5 −40 85 PDIP−20; SOIC−20W; TSSOP−20
COMPARATORS
Device Channels VCC Min (V) VCC Max (V) IO Typ (mA) ICC Typ (mA) tres Typ (ns) VIO Max (mV) TA Min (5C) TA Max (5C) Package
LM211 1 5 36 8 2.4 200 3 −25 85 SOIC−8
LM311 1 5 36 8 2.4 200 7.5 0 70 PDIP−8; SOIC−8
LMV331 1 −40 5 84 0.06 800 9 2.7 85 SC−88A−5 / SC−70−5 / SOT−323−5;
TSOP−5 / SOT23−5
NCS2200 1 0.85 6 70 0.01 1100 5 −40 105 DFN−6; SC−88A−5 / SC−70−5 /
SOT−323−5; TSOP−5 / SOT23−5
NCS2200A 1 0.85 6 60 0.01 1100 5 −40 105 UDFN−6
NCS2202 1 0.85 6 70 0.01 1100 5 −40 105 SC−88A−5 / SC−70−5 / SOT−323−5;
TSOP−5 / SOT23−5
LM2903 2 2 36 16 0.7 1500 7 −40 105 Micro8; PDIP−8; SOIC−8
LM2903V 2 2 36 16 0.7 1500 7 −40 125 PDIP−8; SOIC−8
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17
COMPARATORS (continued)
Device PackageTA Max (5C)TA Min (5C)VIO Max (mV)tres Typ (ns)ICC Typ (mA)IO Typ (mA)VCC Max (V)VCC Min (V)Channels
LM293 2 2 36 16 0.7 1300 5 −25 85 Micro8; SOIC−8
LM393 2 2 36 16 0.7 1300 5 0 70 Micro8; PDIP−8; SOIC−8
LMV393 2 2.7 5.5 84 0.1 800 9 −40 85 Micro8; SOIC−8; UDFN−8
MC10E1651 2 − − 50 − − − 0 85 PLLC−20
MC10E1652 2 − − 50 − − − 0 85 PLLC−20
NCS2220 2 0.85 6 60 0.075 500 5 −40 105 UDFN−8
NCV2903 2 2 36 16 0.7 1500 7 −40 125 Micro8; SOIC−8
NE521 2 −7 7 −100 27 9.6 7.5 0 70 PDIP−14; SOIC−14
LM239 4 3 36 16 1 1300 5 −25 85 PDIP−14; SOIC−14; TSSOP−14
LM2901 4 3 36 16 1 1300 7 −40 105; 125 PDIP−14; SOIC−14; TSSOP−14
LM339 4 3 36 16 1 1300 5 0 70 PDIP−14; SOIC−14; TSSOP−14
LMV339 4 2.7 5 84 0.17 800 9 −40 85 SOIC−14; TSSOP−14
MC3302 4 3 30 16 1 1300 20 −40 85 PDIP−14; SOIC−14; TSSOP−14
NCV2901 4 3 36 16 1 1300 7 −40 125; 150 SOIC−14; TSSOP−14
OPERATIONAL AMPLIFIERS
Device Channels
Rail to
Rail
VCC
Min (V)
VCC Max
(V) IO Min (mA) IO Typ (mA) ID Typ (mA) GBW Typ (MHz) SR Typ (V/uS) VIO Max (mV) Package Type
LM201A 1 No 3 22 − − 1.8 1 0.5 2 PDIP−8; SOIC−8
LM301A 1 No 3 18 − − 1.2 1 0.5 7.5 PDIP−8; SOIC−8
LMV301 1 Yes 1.8 5.5 10 60 0.2 1 1 9 SC−88A−5 / SC−70−5 / SOT−323−5
LMV321 1 Yes 2.5 5.5 10 160 0.25 1 1 9 SC−88A−5 / SC−70−5 / SOT−323−5;
TSOP−5 / SOT23−5
LMV821 1 Yes 2.5 5.5 12 26 0.3 5 2 3.5 SC−88A−5 / SC−70−5 / SOT−323−5
LMV931 1 Yes 1.8 5 68 80 0.21 1.5 0.48 6 SC−88A−5 / SC−70−5 / SOT−323−5;
TSOP−5 / SOT23−5
LMV981 1 Yes 1.8 5 58 80 0.21 1.5 0.48 6 ULLGA−8
MC33071 1 No 3 44 10 30 1.9 4.5 10 5 PDIP−8; SOIC−8
MC33171 1 No 3 44 3 5 0.22 1.8 2.1 4.5 PDIP−8; SOIC−8
MC33201 1 Yes 1.8 12 50 80 0.9 2.2 1 6 PDIP−8; SOIC−8
MC34071 1 No 3 44 10 30 1.9 4.5 10 5 PDIP−8; SOIC−8
MC34071A 1 No 3 44 10 30 1.9 4.5 10 3 PDIP−8; SOIC−8
NCS2001 1 Yes 0.9 7 40 76 0.82 1.4 1.6 6 SC−88A−5 / SC−70−5 / SOT−323−5;
TSOP−5 / SOT23−5
NCS2002 1 Yes 0.9 7 65 86 0.002 1 1.2 6 TSOP−6
NCS7101 1 Yes 1.8 10 50 72 1.13 1 1.2 7 TSOP−5 / SOT23−5
NCV2002 1 Yes 0.9 7 −86 0.002 1 1.2 6 TSOP−6
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OPERATIONAL AMPLIFIERS (continued)
Device Package TypeVIO Max (mV)SR Typ (V/uS)GBW Typ (MHz)ID Typ (mA)IO Typ (mA)IO Min (mA)
VCC Max
(V)
VCC
Min (V)
Rail to
Rail
Channels
NE5230 1 Yes 1.8 15 4 6 0.11 0.25 0.09 3 PDIP−8; SOIC−8
NE5534 1 No 3 20 38 6.5; 8 10 13 2; 4 PDIP−8; SOIC−8
TLV271 1 Yes 2.7 16 5 13 0.56 3 2.6 5 TSOP−5 / SOT23−5
LM258 2 No 3 32 20 40 1.5 1 0.6 5 Micro8; PDIP−8; SOIC−8
LM2904 2 No 3 32 20 40 1.5 1 0.6 7 Micro8; PDIP−8; SOIC−8
LM2904V 2 −3 32 20 40 1.5 1 0.6 7 Micro8; PDIP−8; SOIC−8
LM358 2 No 3 32 20 40 1.5 1 0.6 3; 7 Micro8; PDIP−8; SOIC−8
LM392 2 No 3 30 20 40 60 1 0.1 5 SOIC−8
LM833 2 No 5 18 −29 4 15 7 5 PDIP−8; SOIC−8
LMV358 2 Yes 2.5 5.5 10 160 0.44 1 1 9 Micro8; SOIC−8; UDFN−8
LMV982 2 Yes 1.8 5 58 80 0.42 1.5 0.48 7.5 UQFN−10
MC33072 2 No 3 44 10 30 3.8 4.5 10 3; 5 PDIP−8; SOIC−8
MC33077 2 No 2.5 18 10 26 3.5 37 11 1PDIP−8; SOIC−8
MC33078 2 No 5 18 15 29 4.1 16 7 2 PDIP−8; SOIC−8
MC33172 2 No 3 44 −5 0.44 1.8 2.1 4.5 PDIP−8; SOIC−8
MC33178 2 No 4 36 50 80 0.9 5 2 3 Micro8; PDIP−8; SOIC−8
MC33202 2 Yes 1.8 12 50 80 1.8 2 1 8 Micro8; PDIP−8; SOIC−8
MC33272A 2 No 3 36 25 37 4.3 24 10 1; 2.5 PDIP−8; SOIC−8
MC34072 2 No 3 44 10 30 3.8 4.5 10 5 PDIP−8; SOIC−8
MC34072A 2 No 3 44 10 30 3.8 4.5 10 3; 5 PDIP−8; SOIC−8; WQFN−10
NCS5650 2 Yes 6; +3,−312; +6,−6−1500 20 60; 80 80 10 QFN−20
NCV2904 2 No 3 32 20 40 1.5 1 0.6 7 Micro8; SOIC−8
NCV33072 2 No 3 44 10 30 3.8 4.5 10 5 SOIC−8
NCV33202 2 Yes 1.8 12 50 80 1.8 2 1 8 SOIC−8
NE5517 2 No − − − − − − 50 −PDIP−16; SOIC−16
NE5532 2 No 3 20 10 38 8 10 9 2; 4 PDIP−8; SOIC−16W; SOIC−8
TCA0372 2 No 5 40 1000 5 1.4 1.4 15 PDIP−16; PDIP−8; SOEIAJ−16;
SOIC−16W
LM224 4 No 3 32 20 40 1.4 1 0.6 5 PDIP−14; SOIC−14; TSSOP−14
LM2902 4 No 3 32 20 40 1.4 1 0.6 7 PDIP−14; SOIC−14; TSSOP−14
LM2902V 4 No 3 32 20 40 1.4 1 0.6 7 SOIC−14; TSSOP−14
LM324 4 No 3 32 20 40 1.4 1 0.6 7 PDIP−14; SOIC−14; TSSOP−14
LM324A 4 No 3 32 20 40 1.4 1 0.6 3 PDIP−14; SOIC−14; TSSOP−14
LMV324 4 Yes 2.5 5.5 10 160 0.83 1 1 9 SOIC−14; TSSOP−14
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OPERATIONAL AMPLIFIERS (continued)
Device Package TypeVIO Max (mV)SR Typ (V/uS)GBW Typ (MHz)ID Typ (mA)IO Typ (mA)IO Min (mA)
VCC Max
(V)
VCC
Min (V)
Rail to
Rail
Channels
LMV824 4 Yes 2.5 5.5 12 26 1.3 5 2 3.5 SOIC−14; TSSOP−14
MC3303 4 No 3 36 10 30 2.8 1 0.6 8 PDIP−14; SOIC−14
MC33074 4 No 3 44 10 30 7.6 4.5 10 3; 5 PDIP−14; SOIC−14; TSSOP−14
MC33079 4 No 5 18 15 29 8.4 16 7 2 PDIP−14; SOIC−14
MC33174 4 No 3 44 3 5 0.88 1.8 2.1 4.5 PDIP−14; SOIC−14; TSSOP−14
MC33179 4 No 4 36 50 80 1.7 5 2 3 PDIP−14; SOIC−14; TSSOP−14
MC33204 4 Yes 1.8 12 50 80 3.6 2.2 1 10 PDIP−14; SOIC−14; TSSOP−14
MC33274A 4 No 3 36 25 37 8.6 24 10 1 PDIP−14; SOIC−14; TSSOP−14
MC3403 4 No 3 36 10 20 2.8 1 0.6 10 PDIP−14; SOIC−14
MC34074 4 No 3 44 10 30 7.6 4.5 10 3; 5 PDIP−14; SOIC−14
MC34074A 4 No 3 44 10 30 7.6 4.5 10 3 PDIP−14; SOIC−14
NCV2902 4 No 3 32 20 40 1.4 1 0.6 7 SOIC−14; TSSOP−14
NCV33204 4 Yes 1.8 12 50 80 3.6 2 1 10 SOIC−14; TSSOP−14
NCV33274A 4 No 3 36 25 37 8.6 24 10 1 SOIC−14; TSSOP−14
VIDEO AMPLIFERS
Device Channels GBW Typ (MHz) VCC Max (V) ID Typ (mA) TA Min (5C) TA Max (5C) Package
NCS2561 1 8 3.3 0.0015 −40 125 SC−88−6 / SC−70−6 / SOT−363−6
NE592 1 40; 90 8 18 0 70 PDIP−14; PDIP−8; SOIC−14; SOIC−8
NCS2553 3 8 5.5 23 −40 85 SOIC−8
NCS2563 3 30 5.5 − −40 85 SOIC−8
NCS2554 4 8 5.5 40 −40 85 TSSOP−14
NCS2564 4 8; 34 5.3 40 −40 85 TSSOP−14
NCS2566 6 8; 34 5.3 65 −40 85 TSSOP−20
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Analog Switches
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AUDIO SWITCHES
Device Number of Elements Channels ron Max (W) Ilkg Max (mA) VCC Min (V) VCC Max (V) Package
NLAS4157 1 1 1 1 1.65 5.5 SC−88−6 / SC−70−6 / SOT−363−6
NLAS5123 1 1 1 1 1.65 5.5 UDFN−6;,WDFN−6
NS5B1G385 1 1 7 1 2 5.5 SC−88A−5 / SC−70−5 / SOT−323−5;
TSOP−5 / SOT23−5
NLAS3699 2 4 0.5 1 1.65 3.6 QFN−16
NLAS3699B 2 4 0.75 1 1.65 4.5 QFN−16
NLAS3799B 2 4 0.4 1 1.65 4.5 QFN−16; UQFN−16
NLAS4684 2 2 0.5 1 1.8 5.5 DFN−10; Flip−Chip−10; Micro10
NLAS5157 2 2 0.5 1 1.65 4.3 UDFN−6
NLAS5213 2 2 1.3 1 1.65 4.5 UDFN−8; US8
NLAS5223 2 2 0.5 1 1.65 3.6 WQFN−10
NLAS52231 2 2 0.5 1 1.65 4.5 UQFN−10
NLAS5223B 2 2 0.5 1 1.65 4.5 UQFN−10; WQFN−10
NLAS4783 3 3 1.2 1 1.65 3.6 QFN−16
NLAS4783B 3 3 1.2 1 1.65 4.5 QFN−16
NLAS3799 4 2 0.5 1 1.65 3.6 QFN−16
NLMD5820 4 2 0.5 2 1.65 4.2 UDFN−16
NS5S1153 4 2 4.6 0.08 2.7 5 UQFN−10
NLAS3899 − − 4 1 1.65 4.3 QFN−16
DATA SWITCHES
Device Number of Elements Channels ron Max (W) Ilkg Max (mA) VCC Min (V) VCC Max (V) Package
NS5B1G384 1 1 7 1 2 −SC−88A−5 / SC−70−5 / SOT−323−5; TSOP−5 /
SOT23−5
NS5B1G385 1 1 7 1 2 5.5 SC−88A−5 / SC−70−5 / SOT−323−5; TSOP−5 /
SOT23−5
NCN9252 2 6 6 1 1.65 4.5 UQFN−12
NLAS4717 2 2 4.5 1 1.8 5.5 Flip−Chip−10; Micro10
NLAS4717EP 2 2 4.5 1 1.8 5.5 Flip−Chip−10; WQFN−10
NLAS7213 2 2 9 1 1.65 4.5 UQFN−8
NLAS7222A 2 4 9 1 3 3.6 UQFN−10; WQFN−10
NLAS7222B 2 4 8 1 1.65 4.5 UQFN−10
NLAS7222C 2 4 8 1 1.65 4.5 UQFN−10
NLAS7242 2 2 7.5 1 1.65 4.5 UQFN−10
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DATA SWITCHES (continued)
Device PackageVCC Max (V)VCC Min (V)
Ilkg Max (mA)ron Max (W)
ChannelsNumber of Elements
NLAS8252MUTAG 2 6 6 1 1.65 4.5 UQFN−12
NS5S1153 4 2 4.6 0.08 2.7 5 UQFN−10
NCN1154 6 3 −0.08 2.7 5 UQFN−12
NS3L500 11 11 7 600 3 3.6 WQFN−56
NCN7200 14 7 16 0.1 3 3.6 WQFN−42
NCN2612 30 6 13 500 3 3.6 WQFN−56
NLAS3899 − − 4 1 1.65 4.3 QFN−16
SIGNAL SWITCHES
Device Number of Elements Channels ron Max (W) Ilkg Max (mA) VCC Min (V) VCC Max (V) Package
MC14051B 1 8 500 0.1 3 18 PDIP−16; SOIC−16; TSSOP−16
MC14067B 1 16 500 0.1 3 18 SOIC−24
MC74HC4051A 1 8 190 0.2 2 12 PDIP−16; SOIC−16; SOIC−16W; TSSOP−16
MC74HC4851A 1 8 550 0.1 2 6 PDIP−16; SOIC−16; SOIC−16W; TSSOP−16
MC74LVX8051 1 8 30 0.2 2 6 SOIC−16; TSSOP−16
MC74LVXT8051 1 8 30 0.1 2 6 SOIC−16; TSSOP−16
MC74VHC1G66 1 1 45 0.1 2 5.5 SC−88A−5 / SC−70−5 / SOT−323−5; TSOP−5 /
SOT23−5
MC74VHC1GT66 1 1 45 0.1 2 5.5 SC−88A−5 / SC−70−5 / SOT−323−5; TSOP−5 /
SOT23−5
MC74VHC4051 1 8 160 0.1 2 6 SOIC−16; TSSOP−16
NLAS4051 1 8 37 0.1 2.5 5.5 SOIC−16; TSSOP−16
NLAS4501 1 1 30 0.1 2 5.5 SC−88A−5 / SC−70−5 / SOT−323−5; TSOP−5 /
SOT23−5
NLAS4599 1 2 30 0.1 2 5.5 SC−88−6 / SC−70−6 / SOT−363−6; TSOP−6
NLAS5123 1 1 1 1 1.65 5.5 UDFN−6; WDFN−6
NLASB3157 1 1 7 1 1.65 5.5 SC−88−6 / SC−70−6 / SOT−363−6; WDFN−6
NLAST4051 1 8 37 0.1 2.5 5.5 TSSOP−16
NLAST4501 1 1 30 0.1 2 5.5 SC−88A−5 / SC−70−5 / SOT−323−5; TSOP−5 /
SOT23−5
NLAST4599 1 2 30 0.1 2 5.5 SC−88−6 / SC−70−6 / SOT−363−6; TSOP−6
NS5B1G385 1 1 7 1 2 5.5 SC−88A−5 / SC−70−5 / SOT−323−5; TSOP−5 /
SOT23−5
MC14052B 2 4 500 0.1 3 18 PDIP−16; SOIC−16; TSSOP−16
MC74HC4052A 2 4 190 0.1 2 12 PDIP−16; SOIC−16; SOIC−16W; TSSOP−16
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SIGNAL SWITCHES (continued)
Device PackageVCC Max (V)VCC Min (V)
Ilkg Max (mA)ron Max (W)
ChannelsNumber of Elements
MC74HC4852A 2 4 2; 550 0.1 2 6 PDIP−16; SOIC−16; TSSOP−16
NLAS2066 2 2 11 0.1 1.65 5.5 US8
NLAS3158 2 2 6 1 1.65 5.5 DFN−12
NLAS323 2 1 30 0.1 2 5.5 US8
NLAS324 2 2 30 0.1 2 5.5 US8
NLAS325 2 2 30 0.2 2 5.5 US8
NLAS44599 2 2 30 0.2 2 5.5 QFN−16; TSSOP−16
NLAS4717EP 2 2 4.5 1 1.8 5.5 Flip−Chip−10; WQFN−10
NLAS5223 2 2 0.5 1 1.65 3.6 WQFN−10
NLAS9431 2 2 30 0.2 2 5.5 QFN−16
NLAST44599 2 2 30 0.2 2 5.5 QFN−16; TSSOP−16
NLAST9431 2 2 30 0.2 2 5.5 QFN−16
MC14053B 3 2 500 0.1 3 18 PDIP−16; SOIC−16; TSSOP−16
MC74HC4053A 3 2 190 0.1 2 12 PDIP−16; SOIC−16; SOIC−16W; TSSOP−16
MC74LVX8053 3 2 30 0.1 2 6 SOIC−16; TSSOP−16
MC74LVXT8053 3 2 30 0.1 2 6 SOIC−16; TSSOP−16
NLAS4053 3 2 37 0.1 2.5 5.5 SOIC−16; TSSOP−16
MC14016B 4 1 660 0.1 3 18 PDIP−14; SOIC−14
MC14066B 4 1 500 0.1 3 18 PDIP−14; SOIC−14; TSSOP−14
MC14551B 4 2 500 0.1 3 18 PDIP−16; SOIC−16
MC74HC4066A 4 1 120 0.1 2 12 PDIP−14; SOIC−14; TSSOP−14
MC74HC4316A 4 1 160 0.1 2 6 PDIP−16; SOIC−16
MC74LVX4066 4 1 25 0.1 2 6 SOIC−14; TSSOP−14
MC74LVXT4066 4 4 25 0.1 2 5.5 SOIC−14; TSSOP−14
MC74VHC4066 4 1 120 0.1 2 12 SOIC−14; TSSOP−14
NLAS3799 4 2 0.5 1 1.65 3.6 QFN−16
NL7WB66 20 2 11 0.1 1.65 5.5 US8
NLAS1053 − − 28 1 2 5.5 US8
NLAS3899 − − 4 1 1.65 4.3 QFN−16
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Bipolar Transistors
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Bipolar Transistors
Table of Contents
Page
Bipolar Power Transistors 30..........................
Discrete Transistors 31............................
Darlington Transistors 36..........................
Audio 38........................................
Electronic Lamp Ballasts 39........................
Small−Signal Bipolar Transistors 40....................
General−Purpose Transistors 40....................
General−Purpose Multiple Transistors 45............
Low Noise and Good hFE Linearity 46...............
Darlington Transistors 46..........................
High Current Transistors 47........................
High Voltage Transistors 49........................
RF Transistors 50.................................
Switching Transistors 50...........................
Multiple Switching Transistors 51....................
Digital Transistors (Bias Resistor Transistors) 52......
Dual Digital Transistors
(Bias Resistor Transistors) 54....................
Combinational Digital Transistors
(Bias Resistor Transistors) 55....................
Complex Digital Transistors 57.....................
Low Saturation Voltage Transistors 58...............
Load Switch Transistors 59........................
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BIPOLAR TRANSISTORS SELECTOR GUIDE
SELECTION BY PACKAGE
Package IC Range
(Amps)
VCE Range
(Volts)
PD
(Watts)
SOT−223 0.5−3.0 30−300 2.75−3.0
DPAK 0.5−10 25−450 12.5−25
D2PAK 6.0−10 80−350 50−75
DPAK 0.5−10 25−450 12.5−25
TO−225AA 0.3−5.0 25−500 12.5−50
TO−220AB 0.5−15 32−400 30−150
Isolated
TO−220 1.0−10 60−450 28−45
TO−218 10−25 60−350 80−150
TO−247 8.0−30 150−250 100−200
TO−3P 15−20 150−260 150−200
TO−264 15−20 250−350 200−250
TO−264
5−Lead 15 260 200
TO−3
(TO−204AA)
40 Mil Pins
4.0−30 40−250 115−250
TO−3
(TO−204AE)
60 Mil Pins
40−60 60−250 150−300
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DISCRETE TRANSISTORS
ICCont
Amps
Max
VCEO(sus)
Volts
Min
Device Type
hFE
Min/Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°CPackage
NPN PNP
0.5 300 MMJT350T1 30/240 0.05 30 2.75
SOT−223
2.0 100 NSS1C201MZ4 NSS1C200MZ4 120/360 0.5 100 2.0
3.0 40 NJT4030P 200/400 1.0 160 typ 2.0
40 NJT4031N 200/400 1.0 215 2.0
40 NSS40301MZ4 NSS40300MZ4 200/500 1.0 150 typ 2.0
6.0 60 NSS60601MZ4 NSS60600MZ4 120/360 1.0 100 2.0
0.5 300 MJD340T4 MJD350T4 30/240 0.05 30 15
DPAK
1.0 250 MJD47T4 30/150 0.3 10 15
350 MJD5731T4 10 min 1.0 10 15
400 MJD50T4 30/150 0.3 10 15
2.0 50 NJD2873T4 40 min 2.0 65 12.5
50 NJD1718 70/240 0.5 80 typ 15
3.0 40 MJD31T4 MJD32T4 10 min 1.0 3.0 15
100 MJD31CT4 MJD32CT4 10 min 1.0 3.0 15
4.0 45 MJD148T4 50 min 2.0 3.0 20
100 MJD243T4 MJD253T4 40/180 0.2 40 12.5
5.0 25 MJD200T4 MJD210T4 45/180 2.0 65 12.5
6.0 100 MJD41CT4 MJD42CT4 15/75 3.0 3.0 20
8.0 80 MJD44H11T4 MJD45H11T4 40 min 4.0 50 typ 20
10 60 MJD3055T4 MJD2955T4 20/100 4.0 2.0 20
6.0 100 MJB41CT4 MJB42CT4 15/75 3.0 3.0 65
D2PAK
8.0 80 MJB44H11T4 MJB45H11T4 40/100 4.0 40 50
0.3 350 MJE3439 40/160 0.02 15 15
TO−225AA
0.5 200 MJE344 30/300 0.05 15 20.8
250 2N5655 30/250 0.1 10 20
300 MJE340 MJE350 30/240 0.05 30 20.8
350 2N5657 30/250 0.1 10 20
BD159 30/240 0.05 30 20
1.0 40 2N4921 2N4918 20/100 0.5 3.0 30
60 2N4922 2N4919 20/100 0.5 3.0 30
80 2N4923 2N4920 20/100 0.5 3.0 30
1.5 45 BD135 BD136 40/250 0.15 50 12.5
60 BD137 BD138 40/250 0.15 50 12.5
80 BD139 BD140 40/250 0.15 50 12.5
2.0 45 BD234 25 min 1.0 3.0 25
80 BD237 25 min 1.0 3.0 25
3.0 40 MJE180 MJE170 50/250 0.1 50 12.5
60 MJE181 MJE171 50/250 0.1 50 12.5
80 BD179 BD180 40/250 0.15 3.0 25
MJE182 MJE172 50/250 0.1 50 12.5
†Style 3.
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DISCRETE TRANSISTORS (continued)
ICCont
Amps
Max
VCEO(sus)
Volts
Min
Device Type
hFE
Min/Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°CPackage
NPN PNP
4.0 32 BD435 BD436 50 min 2.0 3.0 36
TO−225AA
40 MJE371 40 min 1.0 3.0 40
2N5190 25 min 1.5 2.0 40
45 BD437 BD438 40 min 2.0 3.0 36
60 BD439 BD440 25 min 2.0 3.0 36
BD787 BD788 20 min 2.0 50 15
2N5191 2N5194 25/100 1.5 2.0 40
80 2N5192 2N5195 25/100 1.5 2.0 40
BD441 BD442 15 min 2.0 3.0 36
100 MJE243 MJE253 40/120 0.2 40 15
5.0 25 MJE200 MJE210 45/180 2.0 65 15
1.0 60 TIP29A 15/75 1.0 3.0 30
TO−220AB
80 TIP29B 15/75 1.0 3.0 30
100 TIP29C TIP30C 15/75 1.0 3.0 30
250 TIP47 30/150 0.3 10 40
300 TIP48 MJE5730 30/150 0.3 10 40
350 MJE5731 30/150 0.3 10 40
375 MJE5731A 30/150 0.3 10 40
400 TIP50 30/150 0.3 10 40
2.0 450/1000 BUX85 30 0.1 4.0 50
MJE18002 14/34 0.2 12 typ 40
3.0 40 TIP31 TIP32 25 min 1.0 3.0 40
60 TIP31A TIP32A 25 min 1.0 3.0 40
80 BD242B 25 min 1.0 3.0 40
TIP31B TIP32B 25 min 1.0 3.0 40
100 BD241C BD242C 25 min 1.0 3.0 40
TIP31C TIP32C 25 min 1.0 3.0 40
4.0 80 D45C12 40/120 0.2 40 typ 30
350 MJE15034 MJE15035 10 min 2.0 30 50
400/700 MJE13005 6/30 3.0 4.0 60
500/800 BUH50 10 typ 2.0 4.0 50
5.0 400/700 BUL45 14/34 0.3 12 typ 75
BUL45D2* 22 min 0.8 13 typ 75
450/1000 MJE18004 14/34 0.3 13 75
NOTE: When two voltages are given, the format is VCEO(sus)/VCES.
*D2 suffix indicates transistor with built−in C−E freewheeling diode and antisaturation network.
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DISCRETE TRANSISTORS (continued)
ICCont
Amps
Max
VCEO(sus)
Volts
Min
Device Type
hFE
Min/Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°CPackage
NPN PNP
6.0 40 TIP42 15/75 3.0 3.0 65
TO−220AB
60 TIP41A TIP42A 15/75 3.0 3.0 65
80 TIP41B TIP42B 15/75 3.0 3.0 65
BD244B 15 min 3.0 3.0 65
100 BD243C BD244C 15 min 3.0 3.0 65
TIP41C TIP42C 15/75 3.0 3.0 65
7.0 30 2N6288 2N6111 30/150 3.0 4.0 40
50 2N6109 30/150 2.5 4.0 40
70 2N6292 2N6107 30/150 2.0 4.0 40
200 BU406 30 min 1.5 10 60
8.0 120 MJE15028 MJE15029 20 min 4.0 30 50
150 MJE15030 MJE15031 20 min 4.0 30 50
250 MJE15032 MJE15033 10 min 2.0 30 50
300 MJE5850 15 min 2.0 30 typ 80
350 MJE5851 15 min 2.0 30 typ 80
400 MJE5852 15 min 2.0 30 typ 80
MJE13007 5/30 5.0 14 typ 80
450/1000 MJE18008 16/34 1.0 13 typ 125
10 60 D44H8 D45H8 40 min 4.0 3.0 50
MJE3055T MJE2955T 20/70 4.0 3.0 75
80 BD809 BD810 15 min 4.0 1.5 90
D44H11 D45H11 40 min 4.0 50 typ 50
400/700 BUH100 6.0 min 10 23 typ 100
12 90 BUV26 12 min 12 30 typ 85
120 BUV27 12 min 8.0 30 typ 70
400/700 MJE13009 6/30 8.0 4.0 100
15 60 2N6487 2N6490 20/150 5.0 5.0 75
80 2N6488 2N6491 20/150 5.0 5.0 75
D44VH10 D45VH10 20 min 4.0 50 typ 83
400/700 BUH150 4.0 min 20 23 typ 150
NOTE: When two voltages are given, the format is VCEO(sus)/VCES.
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34
DISCRETE TRANSISTORS (continued)
ICCont
Amps
Max
VCEO(sus)
Volts
Min
Device Type
hFE
Min/Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°CPackage
NPN PNP
1.0 250 MJF47 30/150 0.3 10 28
Isolated
TO−220
3.0 100 MJF31C MJF32C 10 min 1.0 3.0 28
5.0 450/1000 MJF18004 14/34 0.3 13 typ 35
8.0 150 MJF15030 MJF15031 40 min 3.0 30 35
450/1000 MJF18008 16/34 1.0 13 typ 45
10 60 MJF3055 MJF2955 20/100 4.0 2.0 40
80 MJF44H11 MJF45H11 40/100 4.0 40 35
10 100 TIP33C 20/100 3.0 3.0 80
TO−218
15 60 TIP3055 TIP2955 5 min 10 2.5 80
16 160 MJE4343 15 min 8.0 1.0 125
25 60 TIP35A TIP36A 15/75 15 3.0 125
100 TIP35C TIP36C 15/75 15 3.0 125
15 260 MJW3281A MJW1302A 75/150 4.0 30 200
TO−247
16 250 MJW21194 MJW21193 20/60 8.0 4.0 200
MJW21196 MJW21195 20/60 8.0 4.0 200
30 450/1000 MJW18020 14/35 3.0 13 typ 250
15 260 NJW0281 NJW0302 75/150 3.0 30 150
TO−3P
260 NJW3281 NJW1302 75/150 4.0 30 200
16 250 NJW21194 NJW21193 20/60 8.0 4.0 200
15 260 MJL3281A MJL1302A 75/150 4.0 30 200
TO−264
350 MJL4281A MJL4302A 80/250 5.0 35 230
16 250 MJL21194 MJL21193 25/75 8.0 4.0 200
MJL21196 MJL21195 25/75 8.0 4.0 200
15 260 NJL0281D NJL0302D 75/150 3.0 30 180
TO−264
(5−Lead)
260 NJL3281D NJL1302D 75/150 4.0 30 200
350 NJL4281D NJL4302D 75/150 5.0 30 250
16 250 NJL21194D NJL21193D 25/75 8.0 4.0 200
10 140 2N3442 20/70 4.0 3.0 117
TO−3
(TO−204AA)
15 60 2N3055 MJ2955 20/70 4.0 2.5 115
2N3055A 20/70 4.0 0.8 115
120 MJ15015 MJ15016 20/70 4.0 1.0 180
140 MJ15001 25/150 4.0 2.0 200
NOTE: When two voltages are given, the format is VCEO(sus)/VCES.
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DISCRETE TRANSISTORS (continued)
ICCont
Amps
Max
VCEO(sus)
Volts
Min
Device Type
hFE
Min/Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°CPackage
NPN PNP
16 140 2N3773 15/60 8.0 4.0 150
TO−3
(TO−204AA)
200 MJ15022 MJ15023 15/60 8.0 5.0 250
250 MJ15024 MJ15025 15/60 8.0 5.0 250
MJ21194 MJ21193 25/75 8.0 4.0 250
MJ21196 MJ21195 25/75 8.0 4.0 250
20 60 2N3772 15/60 10 2.0 150
90 2N5038 20/100 12 60 140
140 MJ15003 MJ15004 25/150 5.0 2.0 250
25 60 2N5885 2N5883 20/100 10 4.0 200
80 2N5886 2N5884 20/100 10 4.0 200
100 2N6338 30/120 10 40 200
150 2N6341 30/120 10 40 200
30 40 2N3771 15/60 15 2.0 150
60 2N5302 15/60 15 2.0 200
100 MJ802 MJ4502 25/100 7.5 2.0 200
40 200 BUV21 10 min 25 8.0 150
TO−3
(TO−204AE)
250 BUV22 10 min 20 8.0 250
50 80 2N5686 2N5684 15/60 25 2.0 300
60 80 MJ14002 15/100 50 3.0 300
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DARLINGTON TRANSISTORS
ICCont
Amps
Max
VCEO(sus)
Volts
Min
Device Type
hFE
Min/Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°CPackage
NPN PNP
2.0 100 MJD112T4 MJD117T4 1000 min 2.0 25 20
D2PAK
4.0 80 MJD6039T4 1k/2k 2.0 25 20
350 NJD35N04 2000 min 2.0 90 45
8.0 100 MJD122T4 MJD127T4 1k/2k 4.0 4 20
120 MJD128T4 1k/2k 4.0 4 20
400 MJB5742 200 min 4.0 80
10 80 MJD44E3T4 1k min 5.0 20
350 BUB323Z 500/3400 5.0 2.0 75
2.0 100 MJE270† MJE271† 1.5k min 0.12 6.0 15
TO−225AA
4.0 40 2N6034 25 min 1.5 2.0 40
45 BD675 BD676 750 1.5 3.0 40
BD675A BD676A 750 2.0 3.0 40
60 BD677 BD678 750 min 1.5 40
BD677A BD678A 750 min 2.0 40
MJE800 MJE700 750 min 1.5 1.0 40
2N6038 2N6035 750/18k 2.0 25 40
80 BD679 BD680 750 min 1.5 40
BD679A BD680A 750 min 2.0 40
MJE802 MJE702 750 min 1.5 1.0 40
MJE803 MJE703 750 min 2.0 1.0 40
2N6039 2N6036 750/18k 2.0 25 40
100 BD681 BD682 750 min 1.5 40
2.0 60 TIP110 TIP115 500 min 2.0 25 50
TO−220AB
80 TIP111 TIP116 500 min 2.0 25 50
100 TIP112 TIP117 500 min 2.0 25 50
5.0 60 TIP120 TIP125 1k min 3.0 4.0 65
80 TIP121 TIP126 1k min 3.0 4.0 65
100 TIP122 TIP127 1k min 3.0 4.0 75
8.0 60 2N6043 2N6040 1k/10k 4.0 4.0 75
TIP100 1k/20k 3.0 4.0 80
80 BDX53B BDX54B 750 min 3.0 4.0 60
TIP106 1k/20k 3.0 4.0 80
TIP131 1k/15k 4.0 70
100 TIP132 1k/15k 4.0 70
2N6045 2N6042 1k/10k 3.0 4.0 75
BDX53C BDX54C 750 min 3.0
TIP102 TIP107 1k/20k 3.0 4.0 80
400 MJE5742 200 min 4.0 80
NOTE: When two voltages are given, the format is VCEO(sus)/VCES.
†Style 3.
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DARLINGTON TRANSISTORS (continued)
ICCont
Amps
Max
VCEO(sus)
Volts
Min
Device Type
hFE
Min/Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°CPackage
NPN PNP
10 60 2N6387 2N6667 1k/20k 5.0 20 65
TO−220AB
80 BDX33B BDX34B 750 min 3.0 3.0 70
2N6388 1k/20k 5.0 20 65
100 BDX33C BDX34C 750 min 3.0 3.0 70
15 80 BDW46 1k min 5.0 4.0 85
100 BDW42 BDW47 1k min 5.0 4.0 85
5.0 100 MJF122 MJF127 2000 min 3.0 4.0 28
Isolated
TO−220
10 100 MJF6388 3k/20k 3.0 20 40
10 60 TIP140 500 min 10 4.0 125
TO−218
TIP141 500 min 10 4.0 125
100 BDV65B BDV64B 1k min 5.0 125
TIP142 TIP147 500 min 10 4.0 125
350 BU323Z 500/3400 5.0 150
15 150 MJH11017 400/15k 10 3.0 150
200 MJH11020 MJH11019 400/15k 10 3.0 150
250 MJH11022 MJH11021 400/15k 10 3.0 150
20 100 MJH6284 MJH6287 750/18k 10 4.0 125
12 100 2N6052 750/18k 6.0 4.0 150
TO−3
(TO−204AA)
15 250 MJ11022 MJ11021 100 min 15 3.0 175
20 80 2N6286 750/18k 10 4.0 160
100 2N6284 2N6287 750/18k 10 4.0 160
30 60 MJ11012 1k min 20 4.0 200
120 MJ11016 MJ11015 1k min 20 4.0 200
250 MJ11022 MJ11021 400/15k 10 3.0 200
50 60 MJ11028 400 min 50 300
TO−3
(TO−204AE)
120 MJ11032 MJ11033 400 min 50 300
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Audio
GENERAL DESIGN CURVES FOR POWER AUDIO OUTPUT STAGES
500
300
100
70
50
30
10
10 30 50 100 300 500 1000
16 OHMS
8 OHMS
4 OHMS
OUTPUT POWER (WATTS)
V(BR)CEO (VOLTS)
8 OHMS
4 OHMS
50
30
10
5.0
3.0
1.0
10 30 50 100 300 500 1000
OUTPUT POWER (WATTS)
PEAK OUTPUT CURRENT (AMPS)
16 OHMS
V(BR)CEO Required on Output and Driver Transistor
vs. Output Power for 4, 8 and 18 W Loads
Output Transistor Peak Collector Current
vs. Output Power for 4, 8 and 16 W Loads
Another important parameter that must be considered before selecting the output transistors is the safe−operating area these
devices must withstand. For a complete discussion see Application Note AN485.
RECOMMENDED POWER TRANSISTORS FOR AUDIO/SERVO LOADS
RMS
Power
Output NPN PNP Package
PD
Watts
@ 25°CVCEO IC Max
hFE fT
MHz
Typ
Min/Max
@ IC
Amps
To 25 W MJE15030 MJE15031 TO−220 50 150 8.0 20 min 4.0 30
MJE15032 MJE15033 TO−220 50 250 8.0 50 min 1.0 30
25 to 50 W MJE15034 MJE15035 TO−220 50 350 4.0 50 min 1.0 30
50 to 100 W MJ15003 MJ15004 TO−3 150 140 20 25/150 5.0 3.0
MJ15015 MJ15016 TO−3 180 120 15 20/70 4.0 3.0
Over 100 W
NJW0281 NJW0302 TO−3P 150 260 15 75/150 3.0 30
NJL0281D NJL0302D TO−264
(5−Lead)
180 260 15 75/150 3.0 30
MJL21194 MJL21193 TO−264 200 250 16 25/75 8.0 4.0
MJL21196 MJL21195 TO−264 200 250 16 25/75 8.0 4.0
MJW21194 MJW21193 TO−247 200 250 16 20/60 8.0 4.0
NJW21194 NJW21193 TO−3P 200 250 16 20/60 8.0 4.0
MJW21196 MJW21195 TO−247 200 250 16 25/60 8.0 4.0
MJL3281A MJL1302A TO−264 200 260 15 75/150 5.0 30
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RECOMMENDED POWER TRANSISTORS FOR AUDIO/SERVO LOADS (continued)
RMS
Power
Output NPN PNP Package
PD
Watts
@ 25°CVCEO IC Max
hFE fT
MHz
Typ
Min/Max
@ IC
Amps
Over 100 W
MJW3281A MJW1302A TO−247 200 260 15 75/150 5.0 30
NJW3281 NJW1302 TO−3P 200 260 15 75/150 5.0 30
MJL4281A MJL4302A TO−264 200 350 15 80/200 5.0 35
NJL3281D NJL1302D TO−264
(5−Lead)
200 260 15 75/150 7.0 30
NJL4281D NJL4302D TO−264
(5−Lead)
250 350 15 75/150 5.0 30
MJ15024 MJ15025 TO−3 250 250 16 15/60 8.0 4.0
MJ21194 MJ21193 TO−3 250 250 16 25/75 8.0 4.0
The Power Transistors shown are provided for reference only and show device capability. The final choice of the Power
Transistors used is left to the circuit designer and depends upon the particular safe−operating area required and the mounting
and heat sinking configuration used.
Bipolar Power Transistors for Electronic Lamp Ballasts
ICCont
Amps
Max
VCEO(sus)
Volts
Min
VCES
Volts
Min Device Type
IC
Operating
Amps
hFE min
@ IC
Operating
VCE = 1.0 V
Inductive
Switching
@ IC Operating
tsi/tfi Max (s)
PD (Case)
Watts
@ 25°CPackage
2.0 450 1000 MJE18002 1.0 6.0 2.75/0.175 50
TO−220AB
4.0 500 800 BUH50 2.0 8.0 typ 2.75/0.15 50
5.0
400 700 BUL45 2.0 7.0 3.8/0.17 75
700 BUL45D2* 2.0 10 2.25/0.015 75
450 1000 MJE18004 2.0 6.0 2.5/0.175 75
8.0 450 1000 MJE18008 4.5 6.0 3.2/0.15 125
10 400 700 BUH100 5.0 10 typ 3.5/0.15 100
15 400 700 BUH150 10 8.0 typ 2.75/0.175 150
Isolated TO−220
ICCont
Amps
Max
VCEO(sus)
Volts
Min
VCES
Volts
Min Device Type
IC
Operating
Amps
hFE min
@ IC
Operating
VCE = 1.0 V
Inductive
Switching
@ IC Operating
tsi/tfi Max (s)
PD (Case)
Watts
@ 25°CPackage
5.0 450 1000 MJF18004 2.0 6.0 2.5/0.175 35
Isolated
TO−220
8.0 450 1000 MJF18008 4.5 6.0 3.2/0.15 45
BUH−Series are specified for Halogen applications.
*D2 suffix indicates transistor with built−in C−E freewheeling diode and antisaturation network.
†Style 3.
The isolated TO−220 is UL RECOGNIZED for its isolation feature and has been evaluated to 3500 volts RMS. Actual
isolation rating depends on specific mounting position and maintaining required strike and creepage distances.
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40
BIPOLAR TRANSISTORS
GENERAL−PURPOSE TRANSISTORS
NPN PNP V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
NF
dB
Max Package
Min Max
MPS8099 −80 500 100 300 150 −
TO−226AA, TO−92
Case 29−11
MPSA06 MPSA56 80 500 100 −100 −
BC639 −80 1000 40 160 60 0.5
BC639−16 −80 1000 100 250 60 0.5
−BC490 80 1000 60 400 150 typ −
−BC640−016 80 500 100 250 − −
BC546B BC556B 65 100 180 450 150 10
MPSA05 MPSA55 60 500 100 −100 −
−MPS2907A 60 600 100 300 200 −
MPS651 MPS751 60 2000 75 −75 0.5
BC637 −60 500 40 160 −0.5
−2N5087 50 50 250 800 40 2.0
−BC307B 45 100 200 460 150 10
BC337 −45 800 100 630 210 (Typ) −
BC337−25 BC327−25 45 800 160 400 260 (Typ) −
BC337−40 BC327−40 45 800 250 630 260 (Typ) −
BC550C BC560C 45 100 380 800 250 (Typ) 2.5
BC547B BC557B 45 100 180 450 150 10
BC547C BC557C 45 100 400 800 150 10
MPS2222A −40 600 100 300 300 −
PN2222A −40 600 100 300 300 4
2N4401 2N4403 40 600 100 300 200 −
−MPS4250 40 50 250 800 −2.0
−MPS750 40 2000 40 −75 −
−MPS6652 40 1000 50 −100 −
2N3904 2N3906 40 200 100 300 250 5.0
BC548C −30 100 420 800 300 10
BC548B BC558B 30 100 180 460 150 10
BC549C −30 100 420 800 − −
MPS2222 −30 600 100 300 250 −
2N5088 −30 50 350 −50 3.0
2N5089 −25 50 450 −50 2.0
2N4124 −25 200 120 360 300 −
MPS4124 −25 200 120 360 170 5.0
MPS5172 −25 100 100 500 − −
−BC369 20 1000 60 −65 0.5
MPSW06 MPSW56 80 500 80 −50 −
TO−226AE (1−WATT)
TO−92
Case 29−10
MPSW05 MPSW55 60 500 60 −50 250
MPSW01A MPSW51A 40 1000 50 −50 −
MPSW01 MPSW51 30 1000 50 −50 −
MPS6726 −30 1000 50 250 − −
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
GENERAL−PURPOSE TRANSISTORS (continued)
NPN Package
NF
dB
Max
fT
MHz Min
hFE
IC
mA
Max
V(BR)CEO
PNPNPN Package
NF
dB
Max
fT
MHz Min
MaxMin
IC
mA
Max
V(BR)CEO
PNP
MMBT5550L −140 600 60 250 − −
TO−236AB, SOT−23
Case 318−08
−BSS63L 100 100 30 −50 −0.25
BSS64L −80 100 20 −60 0.15
MMBTA06L MMBTA56L 80 500 100 −100 −
MMBT8099L −80 500 100 300 150 −
BC846AL −65 100 110 220 100 10
BC846BL −65 100 200 450 100 10
−BC856AL 65 100 125 250 100 10
−BC856BL 65 100 220 475 100 10
−MMBT2907AL 60 600 100 300 200 −
MMBT2484L −60 50 250 − − 3.0
MMBTA05L −60 500 100 −100 −
−MMBTA55L 60 500 100 −50 −
MMBT6428L −50 200 250 −100 3.0 (Typ)
−MMBT5087L 50 50 250 −40 2.0
MMBT6429L −45 200 500 −100 3.0 (Typ)
BC817−16L BC807−16L 45 500 100 250 100 −
BC817−25L BC807−25L 45 500 160 400 100 −
BC817−40L BC807−40L 45 500 250 600 100 −
BC847AL −45 100 110 220 100 10
BC847BL −45 100 200 450 100 10
BC847CL −45 100 420 800 100 10
BC850BL −45 100 200 450 100 4.0
BC850CL −45 100 420 800 100 4.0
−BC857AL 45 100 125 250 100 10
−BC857BL 45 100 220 475 100 10
−BC857CL 45 100 420 800 100 10
−BCW68GL 45 800 120 400 100 10
−BCW70L 45 100 215 500 −10
BCW72L −45 100 200 450 300 10
−BCX17L 45 500 100 600 − −
BCX19L −45 500 100 600 − −
MMBT2222AL −40 600 100 300 300 4.0
MMBT3904L −40 200 100 300 200 5.0
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
GENERAL−PURPOSE TRANSISTORS (continued)
NPN Package
NF
dB
Max
fT
MHz Min
hFE
IC
mA
Max
V(BR)CEO
PNPNPN Package
NF
dB
Max
fT
MHz Min
MaxMin
IC
mA
Max
V(BR)CEO
PNP
−MMBT3906L 40 200 100 300 250 4.0
TO−236AB, SOT−23
Case 318−08
MMBT4401L −40 600 100 300 250 −
−MMBT4403L 40 600 100 300 200 −
MMBT3416L −40 100 75 225 − −
−MMBTA70L 40 100 40 400 125 −
−BCW30L 32 100 215 500 −10
BCW32L −32 100 200 450 −10
BCW65AL −32 800 100 250 100 10
BCW65CL −32 100 250 630 100 10
BC848AL −30 100 110 220 100 10
BC848BL −30 100 200 450 100 10
BC848CL −30 100 420 800 100 10
BC849BL −30 100 200 450 100 4.0
BC849CL −30 100 420 800 100 4.0
MMBT489L −30 1000 300 900 100 −
−MMBT589L 30 1000 100 300 100 −
−BC858AL 30 100 125 250 100 10
−BC858BL 30 100 220 475 100 10
−BC858CL 30 100 420 800 100 10
MMBT5088L −30 50 300 900 5 3.0
MMBT2222L −30 600 100 300 250 4.0
MMBT6521L −25 100 300 600 − −
MMBT5089L −25 50 400 1200 50 2.0
MMBT4124L −25 200 120 360 300 5.0
BC818−40L −25 500 250 600 100 −
−MMBT4126L 25 200 120 300 250 4.0
−BC808−25L 25 500 160 400 100 −
BCW33L −20 100 420 800 −10
MSD601−R−50 100 210 340 − −
SC−59
Case 318D−04
MSD602−R−50 500 120 240 − −
MSC2712G −50 100 200 400 − −
−MSA1162G 50 100 200 400 − −
−MSA1162Y 50 100 120 240 − −
−MSB709−R45 100 210 340 − −
MSD1328−R−20 500 200 350 − −
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
GENERAL−PURPOSE TRANSISTORS (continued)
NPN Package
NF
dB
Max
fT
MHz Min
hFE
IC
mA
Max
V(BR)CEO
PNPNPN Package
NF
dB
Max
fT
MHz Min
MaxMin
IC
mA
Max
V(BR)CEO
PNP
MMBTA06W MMBTA56W 80 500 100 −100 −
SC−70, SOT−323
Case 419−04
BC846BW −65 100 200 450 100 10
−BC856BW 65 100 220 475 100 10
−MMBT2907AW 60 600 100 −200 −
MSD1819A−R−50 100 210 340 − −
BC847AW −45 100 110 220 100 10
BC847BW −45 100 200 450 100 10
BC847CW −45 100 420 800 100 4.0
−BC857BW 45 100 220 475 100 10
−BC857CW 45 100 420 800 100 10
−MSB1218A−R45 100 210 340 − −
MMBT4401W −40 600 100 300 250 −
−MMBT4403W 40 600 100 300 200 −
MMBT2222AW −40 600 100 300 300 4.0
MMBT3904W −40 200 100 300 300 5.0
−MMBT3906W 40 200 100 300 250 4.0
BC848BW −30 100 200 450 100 10
BC848CW −30 100 420 800 100 4.0
−BC858AW 30 100 110 220 100 10
−BC858BW 30 100 200 450 100 10
2SC4617 −50 100 120 560 180 (Typ) −
SOT−416, SC−75, SC−90
Case 463−01
−2SA1774 50 100 120 560 140 (Typ) −
BC847BT −45 100 200 450 100 10
BC847CT −45 100 420 800 100 4.0
−BC857BT 45 100 220 475 100 10
MMBT3904T −40 200 100 300 300 5.0
−MMBT3906T 40 200 100 300 250 4.0
MMBT2222AT −40 600 100 300 300 4.0
MMBT5551M3 −160 60 80 250 − −
SOT−723
Case 631AA−01
BC846BM3 −65 100 200 450 100 10
−MMBT2907AM3 60 600 100 300 200 −
2SC5658M3 −50 100 120 560 180 (Typ) −
2SC5658RM3 −50 100 215 375 180 (Typ) −
−2SA2029M3 50 100 120 560 140 (Typ) −
−NS2029M3 50 100 120 560 100 −
−BC856BM3 45 100 220 475 100 10
BC847BM3 −45 100 200 450 100 10
−MMBT4403M3 40 600 100 300 200 −
MMBT4401M3 −40 600 100 300 250 −
MMBT2222AM3 −40 600 100 300 300 4
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
GENERAL−PURPOSE TRANSISTORS (continued)
NPN Package
NF
dB
Max
fT
MHz Min
hFE
IC
mA
Max
V(BR)CEO
PNPNPN Package
NF
dB
Max
fT
MHz Min
MaxMin
IC
mA
Max
V(BR)CEO
PNP
NST846BF3 −65 100 200 450 100 10
SOT−1123
Case 524AA
−NST856BF3 65 100 200 475 100 10
NST847BF3 −45 100 200 450 100 10
−NST857BF3 45 100 200 475 100 10
NST3904F3 −40 200 100 300 200 5
−NST3906F3 40 200 100 300 250 4
NST848BF3 −30 100 200 450 100 10
BCP56 BCP53 80 1000 40 250 50 (Typ) −
SOT−223
Case 318E−04
BCP56−10 BCP53−10 80 1000 63 160 50 (Typ) −
BCP56−16 BCP53−16 80 1000 100 250 50 (Typ) −
−PZT2907A 60 600 100 300 200 −
PZT651 PZT751 60 2000 75 −75 −
PZT2222A −40 600 100 300 300 −
PZT3904 −40 200 100 300 300 5.0
BCP68 BCP69 25 1000 85 375 60 (Typ) −SOT−223
Case 318E−04
−MMBT2131 30 700 150 − − −
SC−74
Case 318F−05
−MBT35200M 35 2000 100 400 100 −
TSOP−6 SINGLE
Case 318G−02
NST489AM −30 2000 300 900 200 −
−NSL12AW 12 2000 100 300 100 −SC−88, SOT−363
Case 419B−02
Devices listed in bold italic are ON Semiconductor preferred devices.
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45
BIPOLAR TRANSISTORS
GENERAL−PURPOSE MULTIPLE TRANSISTORS
Device Type V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
NF
dB
Max Package
Min Max
BC846BDW1 Dual NPN 65 100 200 450 100 10
SC−88, SOT−363
Case 419B−02
BC856BDW1 Dual PNP 65 100 220 475 100 10
BC846BPDW1 Dual Complementary 65 100 200 475 100 10
BC847BDW1 Dual NPN 45 100 200 290 100 10
BC847CDW1 Dual NPN 45 100 420 520 100 4.0
BC857BDW1 Dual PNP 45 100 220 290 100 10
BC857CDW1 Dual PNP 45 100 420 520 100 10
BC847BPDW1 Dual Complementary 45 100 200 475 100 10
MBT3904DW1 Dual NPN 40 200 100 300 300 5.0
MBT3906DW1 Dual PNP 40 200 100 300 250 4.0
MBT3946DW1 Dual Complementary 40 200 100 300 250 5.0/4.0
MBT2222ADW1 Dual NPN 40 600 100 300 300 4.0
MBT6429DW1 Dual NPN 45 200 500 1250 100 −
NST45011MW6 Dual Matched NPN 45 100 200 500 100 10
UMZ1N Dual Complementary 50 200 200 400 114 (Typ) −
BC848CDW1 Dual NPN 30 100 420 250 100 4.0
BC848CPDW1 Dual Complementary 30 100 420 520 100 4.0/10
BC847CDXV6 NPN 45 100 420 520 100 −
SOT−563
Case 463A−01
EMT1DXV6 Dual PNP 60 100 120 560 140 (Typ) −
EMX1DXV6 Dual NPN 50 100 120 560 180 (Typ) −
EMX2DXV6 Dual NPN 50 100 120 560 180 (Typ) −
EMZ1DXV6 Complementary 60 100 120 560 140 (Typ) −
BC847BPDXV6 Complementary 45 100 200 290 100 −
NST3904DXV6 Dual NPN 40 200 100 300 300 −
NST3906DXV6 Dual PNP 40 200 100 300 250 −
NST3946DXV6 Complementary 40 200 100 300 250 −
NST30010MXV6 Matched Dual PNP 30 100 420 520 100 −
BC858CDXV6 Dual PNP 30 100 420 520 100 −
NST3904DP6 Dual NPN 40 200 100 300 200 5
SOT−963
Case 527AA
NST3906DP6 Dual PNP 40 200 100 300 250 4
NST3946DP6 Dual Complementary 40 200 100 300 200 5
NST847BDP6 Dual NPN 45 100 200 450 100 10
NST847BPDP6 Dual Complementary 45 100 200 450 100 10
NST857BDP6 Dual PNP 45 100 200 475 100 10
NST45010MW6 Matched Dual PNP 45 100 220 475 100 10
HN1B01FDW1 Complementary 50 200 200 400 − − SC−74
Case 318F−05
NSS40301MD Matched Dual NPN 40 3000 200 500 150 −
SOIC−8
Case 751
STYLE 16
1
8
Devices listed in bold italic are ON Semiconductor preferred devices.
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46
BIPOLAR TRANSISTORS
LOW NOISE AND GOOD HFE LINEARITY
NPN PNP V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
NF
dB
Max Package
Min Max
−2N5087 50 50 250 800 40 2.0
TO−226AA, TO−92
Case 29−11
(Note 1)
MPSA18 −45 200 500 1500 100 1.5
BC550C −45 100 380 800 250 (Typ) 2.5
2N5088 −30 50 350 −50 3.0
2N5089 −25 50 450 −50 2.0
MMBT2484L −60 50 250 − − 3.0
TO−236AB, SOT−23
Case 318−08
MMBT6428L −50 200 250 −100 3.0 (Typ)
−MMBT5087L 50 50 250 −40 2.0
MMBT6429L −45 200 500 −100 3.0 (Typ)
MMBT5088L −30 50 300 900 5 3.0
MMBT5089L −25 50 400 −50 2.0
Devices listed in bold italic are ON Semiconductor preferred devices.
1. NF: Noise Figure at RS = 2.0 k, IC = 200 A, VCE = 5.0 Volts. f = 30 Hz to 15 kHz.
DARLINGTON TRANSISTORS
NPN PNP V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
NF
dB
Max Package
Min Max
MPSW45A −50 1000 25K 150K 100 1.5
TO−226AE (1−WATT)
TO−92
Case 29−10
MPSW45 −40 1000 25K 150K 100 1.5
MPSA29 −100 500 10K −125 1.5
TO−226AA, TO−92
Case 29−11
BC373 −80 1000 10K 160K 100 1.1
MPSA27 −60 500 10K − − 1.5
2N6427 −40 500 20K 200K −1.5
2N6426 −40 500 30K 300K 125 1.5
MPSA14 −30 500 20K −125 1.5
MPSA13 −30 500 10K −125 1.5
BC517 −30 1000 30K −200 (Typ) 1.0
MMBT6427L −40 500 20000 200000 −10
TO−236AB, SOT−23
Case 318−08
MMBTA14L MMBTA64L 30 300 20K −125 −
MMBTA13L −30 300 10000 −125 −
−MMBTA63L 30 500 10000 −125 −
BSP52 −80 1000 2000 −−−
SOT−223
Case 318E−04
Devices listed in bold italic are ON Semiconductor preferred devices.
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47
BIPOLAR TRANSISTORS
HIGH CURRENT TRANSISTORS (w 500 mA)
NPN PNP V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
NF
dB
Max Package
Min Max
BC639 −80 500 40 160 60 0.5
TO−226AA, TO−92
Case 29−11
BC639−16 −80 1000 100 250 60 0.5
−BC490 80 1000 60 400 150 typ −
MPS8099 −80 500 100 300 150 −
MPSA06 MPSA56 80 500 100 −100 −
MPS651 MPS751 60 2000 75 −75 0.5
BC637 60 500 40 160 −0.5
MPSA05 MPSA55 60 500 100 −100 −
−MPS2907A 60 600 100 300 200 −
BC337 −45 800 100 630 210 (Typ) −
BC337−25 BC327−25 45 800 160 400 260 (Typ) −
BC337−40 BC327−40 45 800 250 630 260 (Typ) −
MPS650 MPS750 40 2000 40 −75 −
MPS2222A −40 600 100 300 300 −
2N4401 2N4403 40 600 100 300 200 −
P2N2222A −40 600 100 300 300 −
PN2222A −40 600 100 300 300 −
MPS6652 40 1000 50 −100 −
MPS2222 −30 600 100 300 250 −
−BC369 20 1000 60 −65 0.5
MPSW06 MPSW56 80 500 80 −50 −
TO−226AE (1−WATT)
TO−92
Case 29−10
MPSW05 −60 500 60 −50 250
−2SA1020 50 2000 70 240 100 −
MPSW01A MPSW51A 40 1000 50 −50 −
MPSW01 MPSW51 30 1000 50 −50 −
MPS6726 −30 1000 50 250 − −
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
HIGH CURRENT TRANSISTORS (w 500 mA) (continued)
NPN Package
NF
dB
Max
fT
MHz Min
hFE
IC
mA
Max
V(BR)CEO
PNPNPN Package
NF
dB
Max
fT
MHz Min
MaxMin
IC
mA
Max
V(BR)CEO
PNP
MMBT5550L −140 600 60 250 − −
TO−236AB, SOT−23
Case 318−08
MMBTA06L MMBTA56L 80 500 100 −100 −
MMBT8099L −80 500 100 300 150 −
−MMBT2907AL 60 600 100 300 200 −
MMBTA05L −60 500 100 −100 −
−MMBTA55L 60 500 100 −50 −
−BCW68GL 45 800 120 400 100 10
BCW66GL −45 800 160 400 100 10
−BCX17L 45 500 100 600 − −
BCX19L −45 500 100 600 − −
MMBT2222AL −40 600 100 300 300 4.0
MMBT4401L −40 600 100 300 250 −
−MMBT4403L 40 600 100 300 200 −
BCW65AL −32 800 100 250 100 10
MMBT2222L −30 600 100 300 250 4.0
BCP56 BCP53 80 1000 40 250 50 (Typ) −
SOT−223
Case 318E−04
BCP56−10 BCP53−10 80 1000 63 160 50 (Typ) −
BCP56−16 BCP53−16 80 1000 100 250 50 (Typ) −
−PZT2907A 60 600 100 300 200 −
PZT651 PZT751 60 2000 75 −75 −
PZT2222A −40 600 100 300 300 −
BCP68 BCP69 25 1000 85 375 60 (Typ) −
MMBT2222AT −40 600 100 300 300 4.0 SOT−416, SC−75, SC−90
Case 463−01
−MMBT2907AW 60 600 100 −200 −
SC−70, SOT−323
Case 419−04
MMBT2222AW −40 600 100 300 300 4.0
−MSB92ASW 300 500 120 200 50 −
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
HIGH VOLTAGE TRANSISTORS (> 100 V)
NPN PNP V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
NF
dB
Max Package
Min Max
MPSW42 −300 500 40 −50 0.5
TO−226AE (1−WATT)
TO−92
Case 29−10
−MPSW92 300 500 25 −50 0.5
2N5551 −160 600 80 250 100 8.0
−2N5401 150 600 60 240 100 8.0
MPSA44 −400 300 50 200 − −
TO−226AA, TO−92
Case 29−11
−BF493S 350 500 40 −50 −
−2N6520 350 500 30 200 40 −
MPSA42 −300 500 40 −50 0.5
−MPSA92 300 500 40 −50 0.5
BF422 BF423 250 500 50 −60 −
2N5550 −140 600 60 250 100 10
MMBT6517L −350 100 15 −40 −
TO−236AB, SOT−23
Case 318−08
−MMBT6520L 350 500 15 −40 −
MMBTA42L −300 50 40 −50 −
−MMBTA92L 300 50 25 −50 −
MMBT5551L −160 600 80 250 − −
−MMBT5401L 150 500 50 −100 8.0
MMBT5550L −140 600 60 250 − −
BSP19A −350 100 40 −70 −
SOT−223
Case 318E−04
PZTA42 PZTA92 300 500 40 −50 −
−PZTA96S 450 500 50 150 − −
−BSP16 300 100 30 120 15 −
BF720 BF721 250 100 50 −60 −
−MSB92 300 50 25 − − −
SC−59
CASE 318D−04
MSD42W −300 150 40 − − −
SC−70, SOT−323
Case 419−04
MSD42SW −300 150 25 200 − −
−MSB92W 300 500 25 −50 −
−MSB92AW 300 500 120 200 50 −
−MSB92ASW 300 500 120 200 50 −
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
RF TRANSISTORS
NPN PNP V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
Cap
pF Max Package
Min Max
MPSH10 −25 −60 −650 CRB = 0.65
TO−226AA, TO−92
Case 29−11
MMBTH10L −25 −60 −650 CCB = 0.7
TO−236AB, SOT−23
Case 318−08
MMBTH10−4L −25 −120 240 800 CCB = 0.7
MMBT918L −15 50 20 −600 COBO = 1.7
BSV52L −12 100 40 120 400 −
MMBTH10M3 −25 −60 −650 CCB = 0.7
SOT−723
Case 631AA−01
Devices listed in bold italic are ON Semiconductor preferred devices.
SWITCHING TRANSISTORS
NPN PNP V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
Toff
ns Max Package
Min Max
−MPS2907A 60 600 100 300 200 110
TO−226AA, TO−92
Case 29−11
2N4401 2N4403 40 600 100 300 200 −
2N3904 2N3906 40 200 100 300 250 300
P2N2222A −40 600 100 300 300 285
MPS2222A −40 600 100 300 300 285
−MMBT2907AL 60 600 100 300 200 100
TO−236AB, SOT−23
Case 318−08
MMBT2222AL −40 600 100 300 300 285
MMBT3904L −40 200 100 300 300 250
−MMBT3906L 40 200 100 300 250 300
MMBT4401L −40 600 100 300 250 255
−MMBT4403L 40 600 100 300 200 255
MMBT2369L −15 200 40 120 −18
MMBT2369AL −15 200 40 120 −18
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
SWITCHING TRANSISTORS
NPN PNP V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
Toff
ns Max Package
Min Max
−MMBT2907AW 60 600 100 300 200 100
SC−70, SOT−323
Case 419−04
MMBT3904W −40 200 100 300 300 250
−MMBT3906W 40 200 100 300 250 300
MMBT2222AW −40 600 100 300 300 285
MMBT4401W −40 600 100 300 250 255
−MMBT4403W 40 600 100 300 200 255
MMBT3904T −40 200 100 300 300 250
SOT−416, SC−75, SC−90
Case 463−01
−MMBT3906T 40 200 100 300 250 300
MMBT2222AT −40 600 100 300 300 285
Devices listed in bold italic are ON Semiconductor preferred devices.
MULTIPLE SWITCHING TRANSISTORS
Device Type V(BR)CEO
IC
mA
Max
hFE fT
MHz Min
Toff
ns Max Package
Min Max
MBT3904DW1 Dual NPN 40 200 100 300 300 250
SC−88, SOT−363
Case 419B−02
MBT3906DW1 Dual PNP 40 200 100 300 250 300
MBT3946DW1 Dual Complementary 40 200 100 300 250 250/300
MBT2222ADW1 Dual NPN 40 600 100 300 300 285
HN1B01FDW1 Dual Complementary 50 200 200 400 − −
SC−74
Case 318F−05
Devices listed in bold italic are ON Semiconductor preferred devices.
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52
BIPOLAR TRANSISTORS
DIGITAL TRANSISTORS (BIAS RESISTOR TRANSISTORS)
These devices include bias resistors on the semiconductor chip with the transistor.
See the BRT diagram for orientation of resistors.
C
(OUT)
E
(GND)
B
(IN)
R1
R2
NPN PNP V(BR)CEO
IC
mA
Max
hFE
Min
R1
W
R2
WPackage
MUN2211 MUN2111 50 100 35 10K 10K
SC−59
Case 318D−04
MUN2212 MUN2112 50 100 60 22K 22K
MUN2213 MUN2113 50 100 80 47K 47K
MUN2214 MUN2114 50 100 80 10K 47K
MUN2215 50 100 160 10K ∞
MUN2216 50 100 160 4.7K ∞
MUN2230 50 100 3.0 1.0K 1.0K
MUN2232 50 100 15 4.7K 4.7K
MUN2233 50 100 80 4.7K 47K
MUN2234 50 100 80 22K 47K
MUN2237 50 100 80 47K 22K
MUN2240 −50 100 160 47K ∞
MMUN2211L MMUN2111L 50 100 35 10K 10K
TO−236AB, SOT−23
Case 318−08
MMUN2212L MMUN2112L 50 100 60 22K 22K
MMUN2213L MMUN2113L 50 100 80 47K 47K
MMUN2214L MMUN2114L 50 100 80 10K 47K
MMUN2215L MMUN2115L 50 100 160 10K ∞
MMUN2216L MMUN2116L 50 100 160 4.7K ∞
MMUN2231L 50 100 8.0 2.2K 2.2K
MMUN2232L MMUN2132L 50 100 15 4.7K 4.7K
MMUN2233L MMUN2133L 50 100 80 4.7K 47K
MMUN2234L MMUN2134L 50 100 80 22K 47K
MMUN2238L −50 100 160 2.2K ∞
MUN5211 MUN5111 50 100 35 10K 10K
SC−70, SOT−323
Case 419−04
MUN5212 MUN5112 50 100 60 22K 22K
MUN5213 MUN5113 50 100 80 47K 47K
MUN5214 MUN5114 50 100 80 10K 47K
MUN5215 50 100 160 10K ∞
MUN5230 50 100 3.0 1.0K 1.0K
MUN5131 50 100 8.0 2.2K 2.2K
MUN5232 MUN5132 50 100 15 4.7K 4.7K
MUN5233 MUN5133 50 100 80 4.7K 47K
MUN5235 MUN5135 50 100 80 2.2K 47K
Devices listed in bold italic are ON Semiconductor preferred devices.
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53
BIPOLAR TRANSISTORS
DIGITAL TRANSISTORS (BIAS RESISTOR TRANSISTORS) (continued)
These devices include bias resistors on the semiconductor chip with the transistor.
See the BRT diagram for orientation of resistors.
C
(OUT)
E
(GND)
B
(IN)
R1
R2
NPN Package
R2
W
R1
W
hFE
Min
IC
mA
Max
V(BR)CEO
PNPNPN Package
R2
W
R1
W
hFE
Min
IC
mA
Max
V(BR)CEO
PNP
DTC114EE DTA114EE 50 100 35 10k 10k
SOT−416, SC−75, SC−90
Case 463−01
DTC124EE 50 100 60 22k 22k
DTC144EE DTA144EE 50 100 80 47k 47k
DTC114YE DTA114YE 50 100 80 10k 47k
DTC114TE DTA114TE 50 100 160 10k ∞
DTC143EE DTA143EE 50 100 15 4.7k 4.7k
DTC143ZE DTA143ZE 50 100 80 4.7k 4.7k
DTC124XE −50 100 80 22k 47k
DTC123JE 50 100 80 2.2k 47k
DTC115EE DTA115EE 50 100 80 100k 100k
DTC114EM3 DTA114EM3 50 100 35 10k 10k
SOT−723
Case 631AA−01
DTC124EM3 DTA124EM3 50 100 60 22k 22k
DTC144EM3 DTA144EM3 50 100 80 47k 47k
DTC114YM3 DTA114YM3 50 100 80 10k 47k
DTC114TM3 DTA114TM3 50 100 160 10k ∞
DTC143TM3 DTA143TM3 50 100 160 4.7k ∞
DTC123EM3 DTA123EM3 50 100 8.0 2.2k 2.2k
DTC143EM3 DTA143EM3 50 100 15 4.7k 4.7k
DTC143ZM3 DTA143ZM3 50 100 80 4.7k 4.7k
DTC124XM3 DTA124XM3 50 100 80 22k 47k
DTC123JM3 50 100 80 2.2k 47k
DTC115EM3 DTA115EM3 50 100 80 100k 100k
DTC144WM3 DTA144WM3 50 100 80 47k 22k
DTC144TM3 DTA144TM3 50 100 160 47k ∞
NSBC143EF3 NSBA143EF3 50 100 15 4.7k 4.7k
SOT−1123
Case 524AA
NSBC114EF NSBA114EF3 50 100 35 10k 10k
NSBC124EF3 NSBA124EF3 50 100 60 22k 22k
NSBC144EF3 NSBA144EF3 50 100 80 47k 47k
NSBC123JF3 NSBA123JF3 50 100 80 2.2k 47k
NSBC143ZF3 NSBA143ZF3 50 100 80 4.7k 47k
NSBC144WF3 NSBA144WF3 50 100 80 47k 22k
NSBC123TF3 NSBA123TF3 50 100 160 2.2k ∞
NSBC114TF3 NSBA114TF3 50 100 160 10k ∞
NSBC115TF3 NSBA115TF3 50 100 160 100k ∞
Devices listed in bold italic are ON Semiconductor preferred devices.
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54
BIPOLAR TRANSISTORS
DUAL DIGITAL TRANSISTORS (BIAS RESISTOR TRANSISTORS)
These devices include bias resistors on the semiconductor chip with the transistor.
See the BRT diagram for orientation of resistors.
C
(OUT)
E
(GND)
B
(IN)
R1
R2
NPN PNP V(BR)CEO
IC
mA
Max
hFE
Min
R1
W
R2
WPackage
MUN5211DW1 MUN5111DW1 50 100 35 10k 10k
SC−88, SOT−363
Duals
Case 419B−02
MUN5212DW1 50 100 60 22k 22k
MUN5213DW1 MUN5113DW1 50 100 80 47k 47k
MUN5214DW1 MUN5114DW1 50 100 80 10k 47k
MUN5215DW1 MUN5115DW1 50 100 160 10k ∞
MUN5216DW1 MUN5116DW1 50 100 160 4.7k ∞
MUN5230DW1 50 100 3.0 1.0k 1.0k
MUN5232DW1 50 100 15 4.7k 4.7k
MUN5233DW1 MUN5133DW1 50 100 80 4.7k 47k
MUN5235DW1 MUN5135DW1 50 100 80 2.2k 47k
MUN5237DW1 50 100 80 47k 22k
NSBC114EDXV6 NSBA114EDXV6 50 100 35 10k 10k
SOT−563
Duals
Case 463A−01
NSBC124EDXV6 50 100 60 22k 22k
NSBC144EDXV6 NSBA144EDXV6 50 100 80 47k 47k
NSBC114YDXV6 NSBA114YDXV6 50 100 80 10k 10k
NSBC114TDXV6 50 100 160 10k −
NSBC143ZDXV6 50 100 80 4.7k 4.7k
NSBA123JDXV6 50 100 80 2.2k 47k
NSBC115EDXV6 NSBA115EDXV6 50 100 80 100k 100k
NSBC143EDP6 NSBA143EDP6 50 100 15 4.7k 4.7k
SOT−963
Case 527AA
NSBC114EDP6 NSBA114EDP6 50 100 35 10k 10k
NSBC124EDP6 NSBA124EDP6 50 100 60 22k 22k
NSBC114YDP6 NSBA114YDP6 50 100 80 10k 47k
NSBC123JDP6 NSBA123JDP6 50 100 80 2.2k 47k
NSBC143ZDP6 NSBA143ZDP6 50 100 80 4.7k 47k
NSBC144EDP6 NSBA144EDP6 50 100 80 47k 47k
NSBC144WDP6 NSBA144WDP6 50 100 80 47k 22k
NSBC114TDP6 NSBA114TDP6 50 100 160 10k ∞
NSBC115TDP6 NSBA115TDP6 50 100 160 100k ∞
NSBC123TDP6 NSBA123TDP6 50 100 160 2.2k ∞
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BIPOLAR TRANSISTORS
DUAL DIGITAL TRANSISTORS (BIAS RESISTOR TRANSISTORS)
These devices include bias resistors on the semiconductor chip with the transistor.
See the BRT diagram for orientation of resistors.
C
(OUT)
E
(GND)
B
(IN)
R1
R2
NPN Package
R2
W
R1
W
hFE
Min
IC
mA
Max
V(BR)CEO
PNPNPN Package
R2
W
R1
W
hFE
Min
IC
mA
Max
V(BR)CEO
PNP
NSBC114YF3 NSBA114YF3 45 100 80 10k 47k
SOT−1123
Case 524AA
IMH20TR1 −15 600 100 2.2k −
SC−74
Case 318F−05
Devices listed in bold italic are ON Semiconductor preferred devices.
BIPOLAR TRANSISTORS
COMBINATIONAL DIGITAL TRANSISTORS (BIAS RESISTOR TRANSISTORS)
These devices include bias resistors on the semiconductor chip with the transistor.
See the BRT diagram for orientation of resistors.
C
(OUT)
E
(GND)
B
(IN)
R1
R2
Device Type V(BR)CEO
IC
mA
Max
hFE
Min Q1 Q2 Package
MUN5311DW1
Dual Complementary
50 100 35 MUN5211 MUN5111
SC−88, SOT−363
Case 419B−02
MUN5312DW1 50 100 60 MUN5212 MUN5112
MUN5313DW1 50 100 80 MUN5213 MUN5113
MUN5314DW1 50 100 80 MUN5214 MUN5114
MUN5315DW1 50 100 160 MUN5215 MUN5115
MUN5316DW1 50 100 160 MUN5216 MUN5116
MUN5330DW1 50 100 3.0 MUN5230 MUN5130
MUN5332DW1 50 100 15 4.7k/4.7k 4.7k/4.7k
MUN5333DW1 50 100 80 MUN5233 MUN5133
MUN5334DW1 50 100 80 22k/47k 22k/47k
MUN5335DW1 50 100 80 MUN5235 MUN5135
NSB4904DW1 50 100 80 22k/47k 22k/47k
UMC3N
Dual Common Base Collector
50 100 35 4.7k/10k 47k/47k
SC−88A, SOT−353
SC70−5
Case 419A−02
UMC5N 50 100 20 47k/∞47k/∞
NSB1706DMW5 Dual Common Emitter 50 100 80 4.7k/47k 4.7k/47k
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
COMBINATIONAL DIGITAL TRANSISTORS (BIAS RESISTOR TRANSISTORS)
These devices include bias resistors on the semiconductor chip with the transistor.
See the BRT diagram for orientation of resistors.
C
(OUT)
E
(GND)
B
(IN)
R1
R2
Device Package
Q2Q1
hFE
Min
IC
mA
Max
V(BR)CEO
TypeDevice Package
Q2Q1
hFE
Min
IC
mA
Max
V(BR)CEO
Type
EMC2DXV5
Dual Common Base Collector
50 100 60 22k/22k 22k/22k
SOT−553
Case 463B−01
EMC3DXV5 50 100 35 10k/10k 10k/10k
EMC4DXV5 50 100 80 10k/47k 4.7k/47k
EMC5DXV5 50 100 35 4.7k/10k 4.7k/47k
EMG2DXV5 Dual Common Base,
Common Emitter 50 100 80 4.7k/47k 4.7K/47k
NSTB1002DXV5 Dual Common Base Collector 40 100 100 47k/47/k 47k/47k
NSTB1005DXV5 50 100 80 47k/47k 47k/47k
EMD4DXV6
Dual Complementary
50 100 80 10k/47k 47k/47k
SOT−563
Case 463A−01
EMD5DXV6 50 100 20 4.7k/10k 47k/47k
NSBC114EPDXV6 50 100 35 10k/10k 10k/10k
NSBC114YPDXV6 50 100 80 10k/47k 10k/47k
NSBC123JPDXV6 50 100 80 2.2k/47k 2.2k/47k
NSBC124EPDXV6 50 100 60 22k/22k 22k/22k
NSBC143TPDXV6 50 100 160 4.7k/∞4.7k/∞
NSBC143ZPDXV6 50 100 80 4.7k/47k 4.7k/47k
NSBC144EPDXV6 50 100 80 47k/47k 47k/47k
NSB1011XV6 Dual NPN 50 100 −2.2k/47k 10k/10k
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
COMBINATIONAL DIGITAL TRANSISTORS (BIAS RESISTOR TRANSISTORS) (continued)
These devices include bias resistors on the semiconductor chip with the transistor.
See the BRT diagram for orientation of resistors.
C
(OUT)
E
(GND)
B
(IN)
R1
R2
Device Type V(BR)CEO
IC
mA
Max
hFE
Min Q1 Q2 Package
NSBC114EPD6
Dual Complementary
50 100 35 10k/10k 10k/10k
SOT−963
Case
NSBC114YPDP6 50 100 80 10k/47k 10k/47k
NSBC123JPDP6 50 100 80 2.2k/47k 2.2k/47k
NSBC143ZPDP6 50 100 80 4.7k/47k 4.7k/47k
NSBC144EPDP6 50 100 80 47k/47k 47k/47k
NSBC115TPDP6 50 100 160 100k/∞100k/∞
Devices listed in bold italic are ON Semiconductor preferred devices.
COMPLEX DIGITAL TRANSISTORS
These devices include bias resistors on the semiconductor chip with the transistor.
See the BRT diagram for orientation of resistors.
(1)(2)
Q2
Q1
R2
R1
(3)
(4) (5) (6)
Device
Switching Transistor
Digital Transistor
Package
V(BR)CEO
V
IC
(mA)
Max
hFE
Min Max
hFE
Min
R1
W
R2
W
EMF5XV6 12 500 270 680 80 47K 47K
SOT−563
Case 463A−01
EMF18XV6 60 100 120 560 80 47K 47K
Devices listed in bold italic are ON Semiconductor preferred devices.
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BIPOLAR TRANSISTORS
LOW SATURATION VOLTAGE TRANSISTORS
NPN PNP V(BR)CEO
IC DC
A
Max
IC Peak
A
Max
hFE @
1.0 A ft
MHz Min
VCE(sat)
@ 1.0 A
Max Package
Min Max
NSS1C201L −100 2 3 120 360 100 0.09
TO−236AB,
SOT−23
Case 318−08
STYLE 6
−NSS1C200L 100 2 3 120 360 120 0.115
NSS60201L −60 2 4 200 500 150 0.070
−NSS60200L 60 2 4 200 500 150 0.095
NSS40201L −40 2 4 200 500 150 0.060
−NSS40200L 40 2 4 200 500 150 0.090
NSS30101L −30 1 2 100 500 100 0.200
−NSS30100L 30 1 2 100 500 100 0.300
NSS20201L −20 2 4 200 500 150 0.050
−NSS20200L 20 2 4 200 500 150 0.080
NSS12201L −12 2 4 200 500 150 0.055
−NSS12200L 12 2 4 200 500 150 0.080
NSS20101J −20 1 2 200 500 350 0.22
SC−89
Case 463A−01
−NSS12100M3 12 1 3 120 0.41
SOT−723
Case 631AA−01
NSS30071MR6 −30 0.7 2 150 500 100 0.250
SC−74
Case 318F−05
STYLE 2
−NSS30070MR6 30 0.7 2 150 500 100 0.250
−NSS35200MR6 35 2 5 100 400 100 0.150
TSOP−6 Single
Case 318G−02
STYLE 6
NSS30201MR6 −30 2 5 200 900 100 0.150
NSS20201MR6 −20 2 5 200 900 100 0.150
−NSS20300MR6 20 3 5 100 400 100 0.150
NSS40601CF8 −40 6 6 225 500 100 0.065
ChipFETt
Case 1206A−03
STYLE 4
−NSS40600CF8 40 6 6 220 500 100 0.065
−NSS35200CF8 35 2 7 100 400 100 0.150
NSS20601CF8 −20 6 6 250 500 100 0.050
NSS12601CF8 −12 6 6 250 500 100 0.050
NSS40501UW3 −40 5 6 250 500 100 0.045
WDFN3
Case 506AU−01
−NSS40500UW3 40 5 6 250 500 100 0.080
NSS20501UW3 −20 5 6 250 500 100 0.045
−NSS20500UW3 20 5 7 250 500 100 0.090
NSS12501UW3 −12 5 6 250 500 100 0.045
−NSS12500UW3 12 5 6 250 500 100 0.070
−NSS12100UW3 12 1 2 200 400 200 0.44
Devices listed in bold italic are ON Semiconductor preferred devices.
ON Semiconductor Selector Guide − Bipolar Transistors
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59
BIPOLAR TRANSISTORS
LOW SATURATION VOLTAGE TRANSISTORS (continued)
NPN Package
VCE(sat)
@ 1.0 A
Max
ft
MHz Min
hFE @
1.0 A
IC Peak
A
Max
IC DC
A
Max
V(BR)CEO
PNPNPN Package
VCE(sat)
@ 1.0 A
Max
ft
MHz Min
MaxMin
IC Peak
A
Max
IC DC
A
Max
V(BR)CEO
PNP
−NSS40200UW6 40 2 4 150 500 100 0.120
WDFN6
Case 506AS−01
−NSS12200W 12 2 3 100 300 100 0.290 SC−88, SOT−363
Case 419B−02
STYLE 20
−NSS12100XV6 12 1 2 200 500 150 0.280
SOT−563
Case 463A−01
NJD2873 −50 2 3 120 360 65 0.300
DPAK
Case 369C−01
NSS1C201MZ4 −100 2 3 120 360 100 0.100
SOT−223
Case 318E−04
−NSS1C200MZ4 100 2 3 120 360 120 0.125
NSS40301MZ4 −40 3 5 200 500 150 0.045
−NSS40300MZ4 40 3 5 200 500 150 0.050
NSS60601MZ4 −60 6 12 120 360 100 0.060
−NSS60600MZ4 60 6 12 120 360 100 0.065
−NSB9435 30 3 5 125 500 110 0.210
Devices listed in bold italic are ON Semiconductor preferred devices.
LOW SATURATION VOLTAGE MULTIPLE TRANSISTORS
Device Type V(BR)CEO IC DC IC Peak
hFE
ftVCE(sat) Package
Min Max
NSS40301MD Matched Dual NPN 40 3 6 200 100 0.05
SOIC−8
Case 751
1
8
NSS40300DD Dual PNP 40 3 6 220 100 0.095
NSS40300MD Matched Dual PNP 40 3 6 220 100 0.095
NSS40302PD Dual Complementary 40 3 6 200 100 0.06
LOAD SWITCH TRANSISTORS (Low Saturation Voltage Transistors with BRT Driver)
NPN PNP V(BR)CEO
IC DC
A
Max
IC Peak
A
Max
hFE @
1.0 A ft
MHz Min
VCE(sat)
@ 0.1 A
Max Package
Min Max
−EMF5XV6 50 0.1 0.5 270 680 −0.250
SOT−563
Case 463A−01
−EMF18XV6 50 0.1 0.5 120 560 −0.400
Devices listed in bold italic are ON Semiconductor preferred devices.
ON Semiconductor Selector Guide − Bipolar Transistors
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Clock and Data Distribution
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ON Semiconductor Selector Guide − Clock and Data Distribution
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63
Clock and Data Distribution
Table of Contents
Page
Arithmetic Functions 64..............................
Drivers and Fanout Buffers 65........................
Flip−Flops, Latches and Registers 65..................
Logic Gates 74.....................................
Multiplexers and Crosspoint Switches 75...............
Serial/Parallel Converters 77..........................
Skew Management 78...............................
Translators 78......................................
ON Semiconductor Selector Guide − Clock and Data Distribution
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64
ARITHMETIC FUNCTIONS
Device Type Input Level Output Level VCC Typ (V) fMax Typ (MHz) tpd Typ (ns) tR & tF Max (ps) Package
MC10H180 Adder /
Subtractor ECL ECL −5.2 1.8 2100 PDIP−16; PLLC−20
MC100E016 Counter ECL ECL 5 900 0.775 700 PLCC−28
MC100E136 Counter ECL ECL 5 650 1.15 600 PLCC−28
MC100E137 Counter ECL ECL 5 2200 2.9 600 PLCC−28
MC100EP016A Counter CML; ECL ECL 3.3 1400 0.55 320 LQFP−32; QFN−32
MC10E016 Counter ECL ECL 5 900 0.775 800 PLCC−28
MC10E136 Counter ECL ECL 5 650 1.15 600 PLCC−28
MC10E137 Counter ECL ECL 5 2200 2.9 600 PLCC−28
MC10EP016 Counter CML; ECL ECL 3.3; 5 900 0.5 220 LQFP−32
MC10H016 Counter ECL ECL −5.2 200 1.8 21 PDIP−16; PLLC−20
MC10H136 Counter ECL ECL −5.2 250 1.5 2400 PDIP−16; PLLC−20
MC100EL32 Divider ECL ECL 5 3000 0.51 350 DFN−8; SOIC−8; TSSOP−8
MC100EL33 Divider ECL ECL 5 4200 0.65 350 SOIC−8; TSSOP−8
MC100EL34 Divider ECL ECL 5 1100 1 52.5 SOIC−16
MC100EL38 Divider ECL ECL 5 1200 0.9 550 SOIC−20W
MC100EL39 Divider ECL ECL 5 1200 0.9 550 SOIC−20W
MC100EP139 Divider CML; ECL ECL 3.3; 5 1000 0.75 275 QFN−20; SOIC−20W; TSSOP−20
MC100EP32 Divider CML; ECL ECL 3.3; 5 4000 0.35 170 DFN−8; SOIC−8; TSSOP−8
MC100EP33 Divider CML; ECL ECL 3.3; 5 4000 0.32 180 DFN−8; SOIC−8; TSSOP−8
MC100LVEL32 Divider ECL; LVDS ECL 3.3 2600 0.51 320 DFN−8; SOIC−8; TSSOP−8
MC100LVEL33 Divider ECL; LVDS ECL 3.3 4000 0.63 320 DFN−8; SOIC−8; TSSOP−8
MC100LVEL34 Divider ECL; LVDS ECL 3.3 1500 0.7 400 SOIC−16; TSSOP−16
MC100LVEL37 Divider ECL; LVDS ECL 3.3 1000 0.7 550 SOIC−20W
MC100LVEL38 Divider ECL; HSTL ECL 3.3 1000 0.9 550 SOIC−20W
MC100LVEL39 Divider ECL; LVDS ECL 3.3 1000 0.9 550 SOIC−20W
MC100LVEP34 Divider CML; ECL; LVDS ECL 2.5; 3.3 2800 0.7 250 SOIC−16; TSSOP−16
MC10EL32 Divider ECL ECL 5 3000 0.51 350 SOIC−8; TSSOP−8
MC10EL33 Divider ECL ECL 5 4000 0.65 350 SOIC−8; TSSOP−8
MC10EL34 Divider ECL ECL 5 1100 1 52.5 SOIC−16
MC10EP139 Divider CML; ECL ECL 3.3; 5 1000 0.75 275 SOIC−20W; TSSOP−20
MC10EP32 Divider CML; ECL ECL 3.3; 5 400; 4000 0.35 17; 170 DFN−8; SOIC−8; TSSOP−8
MC10EP33 Divider CML; ECL ECL 3.3; 5 4000 0.32 180 DFN−8; SOIC−8; TSSOP−8
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ARITHMETIC FUNCTIONS (continued)
Device PackagetR & tF Max (ps)tpd Typ (ns)fMax Typ (MHz)VCC Typ (V)Output LevelInput LevelType
NB4L339 Divider CML; ECL; LVDS ECL 2.5; 3.3 700 1.3 250 QFN−32
NB6L239 Divider CML; CMOS;
ECL; LVDS ECL 2.5; 3.3 3000 0.47 120 QFN−16
NB6N239S Divider CML; CMOS;
ECL; LVDS LVDS 3.3 3000 0.665 190 QFN−16
NB7L32M Divider CML; ECL; LVDS CML 2.5; 3.3 14000 0.155 45 QFN−16
NB7N017M Divider CML; CMOS;
ECL; LVDS CML 3.3 3500 0.5 65 QFN−52
NB7V32M Divider CML; ECL; LVDS CML 1.8; 2.5 10000 0.2 60 QFN−16
NB7V33M Divider CML; ECL; LVDS CML 1.8; 2.5 11000 0.26 60 QFN−16
MC10E166 Magnitude
Comparator ECL ECL 5 1100 0.85 800 PLCC−28
MC12026A Prescaler ECL ECL 5 1100 SOIC−8
MC12080 Prescaler ECL ECL 5 1100 SOIC−8
MC12093 Prescaler ECL ECL 3.3 1100 DFN−8; SOIC−8
MC12095 Prescaler ECL ECL 3.3 3000 DFN−8; SOIC−8
DRIVERS AND FANOUT BUFFERS
Device Type
Channe
ls
Input /
Output
Ratio Input Level
Output
Level
VCC
Typ (V)
TJitter
RMS
Typ
(ps)
tskew(o−o)
Max (ps)
tpd Typ
(ns)
tR & tF Max
(ps)
fmaxClock Typ
(MHz)
fmaxData Typ
(Mbps) Package
MC100EL11 Buffer 1 1:2 ECL ECL 5 0.2 5 0.265 350 2000 SOIC−8;
TSSOP−8
MC100EP11 Buffer 1 1:2 CML; ECL ECL 3.3; 5 0.2 20 0.22 180 3000 DFN−8; SOIC−8;
TSSOP−8
MC100LVEL11 Buffer 1 1:2 ECL; LVDS ECL 3.3 0.2 20 0.33 180 1000 DFN−8; SOIC−8;
TSSOP−8
MC100LVEP11 Buffer 1 1:2 CML; ECL; LVDS ECL 2.5; 3.3 0.2 20 0.24 180 3000 DFN−8; SOIC−8;
TSSOP−8
MC10EL11 Buffer 1 1:2 ECL ECL 5 0.2 5 0.265 350 2000 SOIC−8;
TSSOP−8
MC10EP11 Buffer 1 1:2 ECL ECL 3.3; 5 0.2 20 0.22 180 3000 SOIC−8;
TSSOP−8
MC10LVEP11 Buffer 1 1:2 CML; ECL; LVDS ECL 2.5; 3.3 0.2 20 0.24 180 3000 SOIC−8;
TSSOP−8
NB4N11M Buffer 1 1:2 CML; CMOS;
ECL; LVDS; TTL CML 3.3 1 25 600 300 2500 2500 TSSOP−8
NB6L11 Buffer 1 1:2 CML; CMOS;
ECL; LVDS; TTL ECL 2.5; 3.3 0.2 15 0.15 120 6000 6000 SOIC−8;
TSSOP−8
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66
DRIVERS AND FANOUT BUFFERS (continued)
Device Package
fmaxData Typ
(Mbps)
fmaxClock Typ
(MHz)
tR & tF Max
(ps)
tpd Typ
(ns)
tskew(o−o)
Max (ps)
TJitter
RMS
Typ
(ps)
VCC
Typ (V)
Output
Level
Input Level
Input /
Output
Ratio
Channe
ls
Type
NB6L11M Buffer 1 1:2 CML; CMOS;
ECL; LVDS; TTL CML 2.5; 3.3 0.15 15 200 120 4000 QFN−16
NB6L11S Buffer 1 1:2 CML; CMOS;
ECL; LVDS; TTL LVDS 2.5 0.5 25 0.38 170 2000 2500 QFN−16
NB6L611 Buffer 1 1:2 CML; CMOS;
ECL; LVDS; TTL ECL 2.5; 3.3 0.2 15 0.2 200 4000 QFN−16
NB6N11S Buffer 1 1:2 CML; CMOS;
ECL; LVDS; TTL LVDS 3.3 0.5 30 470 120 2000 2500 QFN−16
NB7L11M Buffer 1 1:2 CML; CMOS;
ECL; LVDS; TTL CML 2.5; 3.3 0.2 15 0.11 60 8000 12000 QFN−16
NBSG11 Buffer 1 1:2 CML; CMOS;
ECL; LVDS; TTL ECL 2.5; 3.3 0.5 15 0.125 30 12000 12000 QFN−16
MC100EL15 Buffer 1 1:4 ECL ECL 5 0.2 50 0.57 575 1000 SOIC−16
MC10EL15 Buffer 1 1:4 ECL ECL 5 0.2 50 0.57 575 1000 SOIC−16
NB3L553 Buffer 1 1:4 CMOS CMOS 2.5; 3.3;
550 4 1000 200 DFN−8; SOIC−8
NB3N2304NZ Buffer 1 1:4 CMOS CMOS 3.3 100 3.5 1500 140 DFN−8;
TSSOP−8
NB3N551 Buffer 1 1:4 CMOS CMOS 3.3; 5 2 160 3 1000 180 DFN−8; SOIC−8
NB6HQ14M Buffer 1 1:4 CML; ECL; LVDS CML 2.5 0.2 3 0.22 30 5000 6500 QFN−16
NB6L14 Buffer 1 1:4 CML; CMOS;
ECL; LVDS; TTL ECL 2.5; 3.3 0.2 20 350 225 3000 2500 QFN−16
NB6L14M Buffer 1 1:4 CML; CMOS;
ECL; LVDS; TTL CML 2.5; 3.3 0.2 20 350 150 3000 2500 QFN−16
NB6L14S Buffer 1 1:4 CML; CMOS;
ECL; HCSL;
HSTL; LVDS;
TTL
LVDS 2.5 0.5 20 0.45 225 2000 2500 QFN−16
NB6N14S Buffer 1 1:4 CML; CMOS;
ECL; LVDS; TTL LVDS 3.3 0.5 20 0.38 190 2000 2500 QFN−16
NB7HQ14M Buffer 1 1:4 CML; ECL; LVDS CML 2.5 0.2 15 0.17 45 7000 10000 QFN−16
NB7L14 Buffer 1 1:4 CML; CMOS;
ECL; LVDS; TTL ECL 2.5; 3.3 0.5 15 165 60 7000 10700 QFN−16
NB7L14M Buffer 1 1:4 CML; CMOS;
ECL; LVDS; TTL CML 2.5; 3.3 0.5 15 0.11 60 8000 12000 QFN−16
NB7VQ14M Buffer 1 1:4 CML; ECL; LVDS CML 1.8; 3.3 0.2 15 0.175 45 8000 14000 QFN−16
NBSG14 Buffer 1 1:4 CML; CMOS;
ECL; LVDS; TTL ECL 2.5; 3.3 0.5 15 0.125 55 12000 12000 QFN−16
MC100EL14 Buffer 1 1:5 ECL ECL 5 0.2 50 0.68 500 1000 SOIC−20W
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DRIVERS AND FANOUT BUFFERS (continued)
Device Package
fmaxData Typ
(Mbps)
fmaxClock Typ
(MHz)
tR & tF Max
(ps)
tpd Typ
(ns)
tskew(o−o)
Max (ps)
TJitter
RMS
Typ
(ps)
VCC
Typ (V)
Output
Level
Input Level
Input /
Output
Ratio
Channe
ls
Type
MC100EP14 Buffer 1 1:5 CML; ECL;
HSTL; LVDS ECL 3.3; 5 0.2 45 0.375 270 2000 TSSOP−20
MC100LVEL14 Buffer 1 1:5 ECL; LVDS ECL 3.3 0.2 50 0.68 500 1000 SOIC−20W
MC100LVEP14 Buffer 1 1:5 CML; ECL;
HSTL; LVDS ECL 2.5; 3.3 0.2 25 0.4 250 2000 TSSOP−20
P2P2305NZ Buffer 1 1:5 CMOS CMOS 3.3 250 4 2000 133.33 SOIC−8
MC100E211 Buffer 1 1:6 ECL ECL 5 0.2 75 0.94 400 700 PLCC−28
MC10E211 Buffer 1 1:6 ECL ECL 5 0.2 75 0.94 400 700 PLCC−28
MC100H643 Buffer 1 1:8 ECL TTL 5 500 1200 80 PLCC−28
MC100H646 Buffer 1 1:8 ECL TTL 5 350 1500 80 PLCC−28
MC10H643 Buffer 1 1:8 ECL TTL 5 500 5.36 1200 80 PLCC−28
MC10H646 Buffer 1 1:8 ECL TTL 5 350 5.36 1500 80 PLCC−28
NB7L1008M Buffer 1 1:8 CML; ECL; LVDS CML 2.5; 3.3 0.2 25 0.16 70 6000 10700 QFN−32
MC100E111 Buffer 1 1:9 ECL ECL 5 0.2 50 0.53 600 800 PLCC−28
MC100EP809 Buffer 1 1:9 CML; ECL;
HSTL; LVDS HSTL 3.3 1.4 15 0.85 600 750 LQFP−32;
QFN−32
MC100LVE111 Buffer 1 1:9 ECL ECL 3.3 0.2 20 0.53 600 1500 PLCC−28
MC10E111 Buffer 1 1:9 ECL ECL 5 0.2 50 0.53 600 800 PLCC−28
MC10H641 Buffer 1 1:9 ECL ECL 5 350 5.36 1700 65 PLCC−28
MC10H645 Buffer 1 1:9 TTL TTL 5 650 5.36 2500 PLCC−28
PCS2P2309NZ Buffer 1 1:9 CMOS CMOS 3.3 250 4 2000 SOIC−16
MC100LVEP111 Buffer 1 1:10 CML; ECL;
HSTL; LVDS ECL 2.5; 3.3 0.2 25 0.5 200 3000 LQFP−32;
QFN−32
NB4N111K Buffer 1 1:10 CML; ECL; LVDS HCSL 3.3 1 100 0.1 700 400 QFN−32
NB7L111M Buffer 1 1:10 CML; CMOS;
ECL; LVDS; TTL CML 2.5; 3.3 0.2 20 0.28 75 5500 6125 QFN−52
NB100LVEP222 Buffer 1 1:15 CML; ECL; LVDS ECL 2.5; 3.3 0.2 20 0.875 160 1000 LQFP−52;
QFN−52
NB100LVEP221 Buffer 1 1:20 CML; ECL;
HSTL; LVDS ECL 2.5; 3.3 1 20 0.54 300 1000 LQFP−52;
QFN−52
NB4N121K Buffer 1 1:21 CML; CMOS;
ECL; LVDS; TTL HCSL 3.3 1 50 0.8 340 200 QFN−52
NB100EP223 Buffer 1 1:22 CML; ECL;
HSTL; LVDS HSTL 3.3 0.2 25 1 700 500 QFP−64 /
LQFP−64
NB100LVEP224 Buffer 1 1:24 CML; ECL; LVDS ECL 2.5; 3.3 5 40 0.75 300 1000 QFP−64 /
LQFP−64
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DRIVERS AND FANOUT BUFFERS (continued)
Device Package
fmaxData Typ
(Mbps)
fmaxClock Typ
(MHz)
tR & tF Max
(ps)
tpd Typ
(ns)
tskew(o−o)
Max (ps)
TJitter
RMS
Typ
(ps)
VCC
Typ (V)
Output
Level
Input Level
Input /
Output
Ratio
Channe
ls
Type
MC10H640 Buffer 1 2:6 ECL TTL 5 500 5.4 2500 135 PLCC−28
MC100E310 Buffer 1 2:8 ECL ECL 5 0.2 50 0.65 600 900 PLCC−28
MC100H642 Buffer 1 2:8 ECL TTL 5 500 5.25 2500 100 PLCC−28
MC100LVE310 Buffer 1 2:8 ECL ECL 3.3 1.5 50 0.65 600 1000 PLCC−28
NB3H83905C Buffer 1 Crystal CMOS 1.8; 3.3 0.14 80 −800 40 SOIC−16;
TSSOP−16
MC100LVE210 Buffer 1 1:4; 1:5 ECL ECL 3.3 0.2 75 0.6 600 700 PLCC−28
MC100EL13 Buffer 2 1:3 ECL ECL 5 0.2 50 0.5 500 1000 SOIC−20W
MC100LVEL13 Buffer 2 1:3 ECL; LVDS ECL 3.3 0.2 50 0.5 500 1000 SOIC−20W
MC100EP210S Buffer 2 1:5 CML; ECL; LVDS LVDS 3.3 0.2 20 0.55 225 1000 LQFP−32;
QFN−32
MC100LVEP210 Buffer 2 1:5 CML; ECL;
HSTL; LVDS ECL 2.5; 3.3 0.2 20 0.35 270 3000 LQFP−32;
QFN−32
MC100LVE222 Buffer 2 1:15 ECL ECL 3.3 0.2 50 1.18 600 1500 QFP−52 /
LQFP−52
MC100E210 Buffer 2 1:4; 1:5 ECL ECL 5 0.2 75 0.6 600 700 PLCC−28
MC10EL89 Coaxial
Cable Driver 1 1:2 ECL 2X ECL 5 20 0.35 455 1500 SOIC−8;
TSSOP−8
MC10EP89 Coaxial
Cable Driver 1 1:2 CML; ECL 2X ECL 3.3; 5 0.5 20 0.31 350 2000 DFN−8; SOIC−8;
TSSOP−8
MC10SX1189 Fibre
Channel
Coaxial
Cable Driver
1 1:2 ECL 2X ECL 5 0.425 250 2500 SOIC−16
MC10SX1190 Fibre
Channel
Coaxial
Cable Driver
1 1:2 ECL 2X ECL 3.3; 5 0.425 250 2500 2500 TSSOP−20
MC10SX1130 LED Driver 1 1:1 ECL ECL 5 1.4 1260 300 SOIC−16
NB7L585 Multiplexer 1 2:6 CML; ECL; LVDS ECL 2.5; 3.3 0.2 20 0.175 85 QFN−32
NB7L585R Multiplexer 1 2:6 CML; ECL; LVDS RSECL 2.5 0.2 20 0.160−0
.200 70 QFN−32
NB7VQ572M Multiplexer 1 4:2 CML; ECL; LVDS CML 1.8; 3.3 0.2 15 175 65 7000 11000 QFN−32
NB7VPQ16M PreEmphasi
s &
Equalizer
1 1:1 CML; ECL; LVDS CML 1.8; 2.5 0.1 0.2 50 8000 12500 QFN−16
MC100EL12 Signal
Driver 1 1:1 ECL ECL 5 0.29 550 1000 SOIC−8;
TSSOP−8
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DRIVERS AND FANOUT BUFFERS (continued)
Device Package
fmaxData Typ
(Mbps)
fmaxClock Typ
(MHz)
tR & tF Max
(ps)
tpd Typ
(ns)
tskew(o−o)
Max (ps)
TJitter
RMS
Typ
(ps)
VCC
Typ (V)
Output
Level
Input Level
Input /
Output
Ratio
Channe
ls
Type
MC100EL16 Signal
Driver 1 1:1 ECL ECL 5 0.2 0.25 350 1000 SOIC−8;
TSSOP−8
MC100EP16 Signal
Driver 1 1:1 CML; ECL ECL 3.3; 5 0.2 0.22 180 4000 DFN−8; SOIC−8;
TSSOP−8
MC100EP16F Signal
Driver 1 1:1 CML; ECL RSECL 3.3; 5 0.2 0.3 100 4000 SOIC−8;
TSSOP−8
MC100EP16T Signal
Driver 1 1:1 CML; ECL ECL 3.3; 5 0.2 0.22 180 3000 DFN−8; SOIC−8;
TSSOP−8
MC100EP16VA Signal
Driver 1 1:1 CML; ECL ECL 3.3; 5 0.2 0.27 180 3000 DFN−8; SOIC−8;
TSSOP−8
MC100EP16VS Signal
Driver 1 1:1 ECL ECL 3.3; 5 0.2 0.22 180 4000 SOIC−8;
TSSOP−8
MC100EP16VT Signal
Driver 1 1:1 ECL ECL 3.3; 5 0.2 0.3 180 4000 DFN−8; SOIC−8;
TSSOP−8
MC100LVEL16 Signal
Driver 1 1:1 ECL; LVDS ECL 3.3 0.2 0.3 320 1000 DFN−8; SOIC−8;
TSSOP−8
MC100LVEP16 Signal
Driver 1 1:1 CML; ECL; LVDS ECL 2.5; 3.3 0.2 0.24 180 4000 DFN−8; SOIC−8;
TSSOP−8
MC10EL16 Signal
Driver 1 1:1 ECL ECL 5 0.2 0.25 350 1750 SOIC−8;
TSSOP−8
MC10EP16 Signal
Driver 1 1:1 CML; ECL ECL 3.3; 5 0.2 0.22 180 4000 DFN−8; SOIC−8;
TSSOP−8
MC10EP16T Signal
Driver 1 1:1 CML; ECL ECL 3.3; 5 0.2 0.22 180 3000 DFN−8; SOIC−8;
TSSOP−8
MC10EP16VA Signal
Driver 1 1:1 CML; ECL ECL 3.3; 5 0.2 0.27 180 3000 DFN−8; SOIC−8;
TSSOP−8
MC10LVEP16 Signal
Driver 1 1:1 CML; ECL; LVDS ECL 2.5; 3.3 0.2 0.24 180 4000 SOIC−8;
TSSOP−8
NB4L16M Signal
Driver 1 1:1 CML; CMOS;
ECL; LVDS; TTL CML 2.5; 3.3 0.2 0.265 90 3500 5000 QFN−16
NB4N316M Signal
Driver 1 1:1 CML; CMOS;
ECL; HSTL;
LVDS; TTL
CML 3.3 1 20 0.55 300 2000 2500 TSSOP−8
NB6L16 Signal
Driver 1 1:1 CML; CMOS;
ECL; LVDS; TTL ECL 2.5; 3.3 0.2 0.13 120 6000 6000 SOIC−8;
TSSOP−8
NB7L216 Signal
Driver 1 1:1 CML; CMOS;
ECL; LVDS; TTL ECL 2.5; 3.3 0.1 0.18 45 8500 12000 QFN−16
NBSG16 Signal
Driver 1 1:1 CML; CMOS;
ECL; LVDS; TTL RSECL 2.5; 3.3 0.3 0.12 65 12000 12000 QFN−16
NBSG16M Signal
Driver 1 1:1 CML; CMOS;
ECL; LVDS; TTL CML 2.5; 3.3 0.2 0.12 53 10000 10000 QFN−16
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70
DRIVERS AND FANOUT BUFFERS (continued)
Device Package
fmaxData Typ
(Mbps)
fmaxClock Typ
(MHz)
tR & tF Max
(ps)
tpd Typ
(ns)
tskew(o−o)
Max (ps)
TJitter
RMS
Typ
(ps)
VCC
Typ (V)
Output
Level
Input Level
Input /
Output
Ratio
Channe
ls
Type
NBSG16VS Signal
Driver 1 1:1 CML; CMOS;
ECL; LVDS; TTL RSECL 2.5; 3.3 0.8 no spec 0.125 55 12000 12000 QFN−16
MC100EP16VB Signal
Driver 1 1:2 CML; ECL ECL 3.3; 5 0.2 0.3 240 3000 SOIC−8;
TSSOP−8
MC100EP16VC Signal
Driver 1 1:2 ECL ECL 3.3; 5 0.2 0.38 240 3000 DFN−8; SOIC−8;
TSSOP−8
MC100LVEL12 Signal
Driver 1 1:2 ECL ECL 3.3 0.445 550 1000 DFN−8; SOIC−8;
TSSOP−8
MC10EL12 Signal
Driver 1 1:2 ECL ECL 5 0.29 550 SOIC−8;
TSSOP−8
NB7VQ1006M Signal
Driver 1 1:6 CML; ECL; LVDS CML 1.8; 2.5 0.2 1 0.225 65 7500 10000 QFN−24
NB4N527S Signal
Driver 2 1:1 CML; CMOS;
ECL; HSTL;
LVDS
LVDS 3.3 1 50 0.275 300 1500 2500 QFN−16
NB4N855S Signal
Driver 2 1:1 CML; CMOS;
ECL; HSTL;
LVDS; SSTL;
TTL
LVDS 3.3 1 25 0.47 140 1500 2500 Micro10
NB4N1158 Signal
Driver 2 2:1 ECL; TTL ECL 3.3 10 0.375 150 1500 TSSOP−28
MC10H116 Signal
Driver 3 1:1 ECL; HSTL ECL −5.2 1 1600 PDIP−16;
PLLC−20;
SOIC−16
MC10H123 Signal
Driver 3 4:1 ECL ECL −5.2 1.5 1700 PDIP−16;
PLLC−20
MC100E112 Signal
Driver 4 1:1 ECL ECL 5 40 0.4 700 700 PLCC−28
MC100EL17 Signal
Driver 4 1:1 ECL; LVDS ECL 5 0.2 0.425 550 1000 SOIC−20W
MC100EP17 Signal
Driver 4 1:1 CML; ECL ECL 3.3; 5 0.2 0.22 230 3000 QFN−20;
SOIC−20W;
TSSOP−20
MC100H680 Signal
Driver 4 1:1 ECL TTL 5 3.2 3400 PLCC−28
MC100LVEL17 Signal
Driver 4 1:1 ECL; LVDS ECL 3.3 0.2 0.425 550 1750 SOIC−20W
MC10EP17 Signal
Driver 4 1:1 CML; ECL ECL 3.3; 5 0.2 0.22 230 3000 QFN−20;
SOIC−20W;
TSSOP−20
MC10H115 Signal
Driver 4 1:1 ECL ECL −5.2 1 1500 PDIP−16;
PLLC−20
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71
DRIVERS AND FANOUT BUFFERS (continued)
Device Package
fmaxData Typ
(Mbps)
fmaxClock Typ
(MHz)
tR & tF Max
(ps)
tpd Typ
(ns)
tskew(o−o)
Max (ps)
TJitter
RMS
Typ
(ps)
VCC
Typ (V)
Output
Level
Input Level
Input /
Output
Ratio
Channe
ls
Type
NB100LVEP17 Signal
Driver 4 1:1 CML; ECL; LVDS ECL 2.5; 3.3;
50.5 0.25 240 2500 2500 QFN−24;
TSSOP−20
MC10E112 Signal
Driver 4 1:2 ECL ECL 5 40 0.4 700 700 PLCC−28
MC100E116 Signal
Driver 5 1:1 ECL ECL 5 0.2 0.3 575 800 PLCC−28
MC10E116 Signal
Driver 5 1:1 ECL ECL 5 0.2 0.3 575 800 PLCC−28
MC10E416 Signal
Driver 5 1:1 ECL ECL 5 0.2 0.35 350 2000 PLCC−28
MC100EP116 Signal
Driver 6 1:1 ECL ECL 3.3; 5 0.2 0.26 240 3000 LQFP−32;
QFN−32
MC10EP116 Signal
Driver 6 1:1 CML; ECL ECL 3.3; 5 0.2 0.26 240 3000 LQFP−32
MC10E122 Signal
Driver 9 1:1 ECL ECL 5 75 0.35 800 800 PLCC−28
FLIP−FLOPS, LATCHES AND REGISTERS
Device Type Bits
Input
Level Output Level
VCC
Typ (V)
tJitter
Typ
(ps)
tpd Typ
(ns)
tsu Min
(ns)
th Min
(ns) trec Typ (ns) tR & tF Max (ps)
fToggle Typ
(MHz) Package
MC100EL31 D−Type 1 ECL ECL 5 1 0.475 0.15 0.25 0.4 350 2800 SOIC−8;
TSSOP−8
MC100EL51 D−Type 1 ECL ECL 5 1 0.475 0.15 0.25 0.4 350 2800 SOIC−8;
TSSOP−8
MC100EL52 D−Type 1 ECL ECL 5 1 0.365 0.125 0.15 350 2800 SOIC−8;
TSSOP−8
MC100EP31 D−Type 1 CML;
ECL ECL 3.3; 5 0.2 0.34 0.1 0.15 0.225 200 3000 DFN−8; SOIC−8;
TSSOP−8
MC100EP51 D−Type 1 CML;
ECL ECL 3.3; 5 0.2 0.37 0.1 0.1 0.15 180 3000 DFN−8; SOIC−8;
TSSOP−8
MC100EP52 D−Type 1 CML;
ECL ECL 3.3; 5 0.2 0.33 0.05 0 180 4000 DFN−8; SOIC−8;
TSSOP−8
MC100LVEL31 D−Type 1 ECL ECL 3.3 1 0.475 0.15 0.25 0.4 320 2900 SOIC−8;
TSSOP−8
MC100LVEL51 D−Type 1 ECL ECL 3.3 1 0.475 0.15 0.25 0.35 320 2800 DFN−8; SOIC−8;
TSSOP−8
MC10EL31 D−Type 1 ECL ECL 5 1 0.475 0.15 0.25 0.4 350 2800 SOIC−8;
TSSOP−8
MC10EL51 D−Type 1 ECL ECL 5 1 0.475 0.15 0.25 0.4 350 2800 SOIC−8;
TSSOP−8
ON Semiconductor Selector Guide − Clock and Data Distribution
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72
FLIP−FLOPS, LATCHES AND REGISTERS (continued)
Device Package
fToggle Typ
(MHz)
tR & tF Max (ps)trec Typ (ns)
th Min
(ns)
tsu Min
(ns)
tpd Typ
(ns)
tJitter
Typ
(ps)
VCC
Typ (V)
Output Level
Input
Level
BitsType
MC10EL52 D−Type 1 ECL ECL 5 1 0.365 0.125 0.15 350 2800 SOIC−8;
TSSOP−8
MC10EP31 D−Type 1 CML;
ECL ECL 3.3; 5 0.2 0.34 0.1 0.15 0.225 200 3000 DFN−8; SOIC−8;
TSSOP−8
MC10EP51 D−Type 1 CML;
ECL ECL 3.3; 5 0.2 0.375 0.1 0.1 0.15 180 3000 DFN−8; SOIC−8;
TSSOP−8
MC10EP52 D−Type 1 CML;
ECL ECL 3.3; 5 1 0.33 0.05 0 180 4000 DFN−8; SOIC−8;
TSSOP−8
NB4L52 D−Type 1 CML;
CMOS;
ECL;
LVDS
ECL 2.5; 3.3;
51 0.33 0.1 0.05 0.4 200 4000 QFN−16
NBSG53A D−Type 1 CML;
CMOS;
ECL;
LVDS
ECL 2.5; 3.3 0.5 0.215 0.03 0.025 0.009 60 10000 QFN−16
MC100EL29 D−Type 2 ECL;
LVDS ECL 5 1 0.58 0 0.1 0.1 550 1100 SOIC−20W
MC100EP29 D−Type 2 CML;
ECL ECL 3.3; 5 0.2 0.42 0.1 0.1 0.15 300 3000 QFN−20;
TSSOP−20
MC100LVEL29 D−Type 2 ECL;
LVDS ECL 3.3 1 0.58 0 0.1 0.1 550 1100 SOIC−20W
MC10EP29 D−Type 2 CML;
ECL ECL 3.3; 5 0.2 0.42 0.1 0.1 0.15 300 3000 QFN−20;
TSSOP−20
MC10H131 D−Type 2 ECL ECL −5.2 1 0.7 0.8 2000 250 PDIP−16;
PLLC−20
MC100E431 D−Type 3 ECL ECL 5 1 0.6 0.2 0.2 0.4 650 1100 PLCC−28
MC100EL30 D−Type 3 ECL ECL 5 1 0.45 0.15 0.2 0.4 550 1200 SOIC−20W
MC100LVEL30 D−Type 3 ECL ECL 3.3 1 0.45 0.15 0.2 0.4 550 1200 SOIC−20W
MC10E431 D−Type 3 CML;
ECL ECL 5 1 0.6 0.2 0.2 0.4 650 1100 PLCC−28
MC100E131 D−Type 4 ECL ECL 5 1 0.5 0.15 0.175 0.4 480 1100 PLCC−28
MC100EP131 D−Type 4 CML;
ECL ECL 3.3; 5 0.2 0.46 0.12 0.12 0.29 290 3000 LQFP−32;
QFN−32
MC10E131 D−Type 4 ECL ECL 5 1 0.5 0.15 0.175 0.4 480 1100 PLCC−28
MC10EP131 D−Type 4 CML;
ECL ECL 3.3; 5 0.2 0.46 0.12 0.12 0.29 290 3000 LQFP−32;
QFN−32
MC10H176 D−Type 6 ECL ECL −5.2 1.7 1.5 0.9 1900 250 PDIP−16;
PLLC−20
NB7V52M D−Type CML;
ECL;
LVDS
CML 1.8; 2.5 0.2 0.2 0.04 0.05 35 10000 QFN−16
ON Semiconductor Selector Guide − Clock and Data Distribution
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73
FLIP−FLOPS, LATCHES AND REGISTERS (continued)
Device Package
fToggle Typ
(MHz)
tR & tF Max (ps)trec Typ (ns)
th Min
(ns)
tsu Min
(ns)
tpd Typ
(ns)
tJitter
Typ
(ps)
VCC
Typ (V)
Output Level
Input
Level
BitsType
MC100EL35 JK−Type 1 ECL ECL 5 1 0.252;
0.525 0.15 0.25 0.4 350 2200 DFN−8; SOIC−8;
TSSOP−8
MC100EP35 JK−Type 1 CML;
ECL ECL 3.3; 5 0.2 0.41 0.15 0.15 0.15 180 3000 DFN−8; SOIC−8;
TSSOP−8
MC10EL35 JK−Type 1 ECL ECL 5 1 0.525 0.15 0.25 0.4 350 2200 SOIC−8;
TSSOP−8
MC10EP35 JK−Type 1 CML;
ECL ECL 3.3; 5 0.2 0.41 0.15 0.15 0.15 180 3000 SOIC−8;
TSSOP−8
MC10H135 JK−Type 2 ECL ECL −5.2 1.5 1.5 1 2200 250 PDIP−16;
PLLC−20
MC100E150 Latch 6 ECL ECL 5 1 0.8 0.2 0.2 0.75 450 1000 PLCC−28
MC10E150 Latch 6 ECL ECL −5.2 1 0.8 0.2 0.2 0.75 450 900 PLCC−28
MC100E175 Latch 9 ECL ECL 5 1 0.6 0.275 0.175 0.85 800 1000 PLCC−28
MC10E175 Latch 9 ECL ECL −5.2 1 0.6 0.275 0.175 0.85 800 1100 PLCC−28
MC100E452 Register 5 ECL ECL 5 1 0.6 0.175 0.225 0.75 650 PLCC−28
MC10E452 Register 5 ECL ECL 5 1 0.6 0.175 0.225 0.75 650 PLCC−28
MC100E151 Register 6 ECL ECL 5 1 0.65 0.15 0.35 0.75 450 1100 PLCC−28
MC100E451 Register 6 ECL ECL 5 1 0.65 0.15 0.35 0.75 800 PLCC−28
MC100EP451 Register 6 CML;
ECL ECL 3.3; 5 0.2 0.45 0.08 0.08 0.25 260 3000 LQFP−32;
QFN−32
MC10E151 Register 6 ECL ECL 5 1 0.65 0.15 0.35 0.75 450 1100 PLCC−28
MC10E451 Register 6 ECL ECL 5 1 0.65 0.15 0.35 0.75 800 PLCC−28
MC10EP451 Register 6 CML;
ECL ECL 3.3; 5 0.2 0.45 0.08 0.08 0.25 260 3000 LQFP−32;
QFN−32
MC100E143 Register 9 ECL ECL 5 1 0.8 0.05 0.3 0.9 800 PLCC−28
MC10E143 Register 9 ECL ECL 5 1 0.8 0.05 0.3 0.9 800 PLCC−28
MC10H141 Shift
Register 4 ECL ECL −5.2 1.5 1.5 1 2400 250 PDIP−16;
PLLC−20
MC100E241 Shift
Register 8 ECL ECL 5 1 0.75 0.175 0.2 0.9 800 PLCC−28
MC10E141 Shift
Register 8 ECL ECL 5 1 0.75 0.175 0.2 0.9 800 700 PLCC−28
MC100EP142 Shift
Register 9 CML;
ECL ECL 3.3; 5 1 0.675 0.05 0.1 0.8 275 2800 LQFP−32;
QFN−32
ON Semiconductor Selector Guide − Clock and Data Distribution
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74
FLIP−FLOPS, LATCHES AND REGISTERS (continued)
Device Package
fToggle Typ
(MHz)
tR & tF Max (ps)trec Typ (ns)
th Min
(ns)
tsu Min
(ns)
tpd Typ
(ns)
tJitter
Typ
(ps)
VCC
Typ (V)
Output Level
Input
Level
BitsType
MC10E142 Shift
Register 9 ECL ECL 5 1 0.8 0.05 0.3 0.9 800 PLCC−28
MC10EP142 Shift
Register 9 CML;
ECL ECL 3.3; 5 1 0.675 0.05 0.1 0.8 275 2800 LQFP−32;
QFN−32
LOGIC GATES
Device Type Channels Input Level
Output
Level
VCC Typ
(V)
fToggle Max
(MHz) tpd Typ (ns)
tJitter Typ
(ps)
tR & tF Max
(ps) Package
MC10H104 AND 4 ECL ECL −5.2 1 1700 PDIP−16; PLLC−20
MC100E104 AND/NAND 5 ECL ECL 5 2000 0.385 1 700 PLCC−28
MC100E404 AND/NAND 4 ECL ECL 5 2000 0.475 1 400 PLCC−28
MC100EL04 AND/NAND 1 ECL ECL 5 2000 0.24 1 350 SOIC−8; TSSOP−8
MC100EL05 AND/NAND 1 ECL ECL 5 2000 0.275 1 350 SOIC−8; TSSOP−8
MC100EP05 AND/NAND 1 CML; ECL ECL 3.3; 5 3000 0.22 0.2 180 DFN−8; SOIC−8; TSSOP−8
MC100EP105 AND/NAND 1 CML; ECL ECL 3.3; 5 3000 0.22 0.2 180 LQFP−32; QFN−32
MC100LVEL05 AND/NAND 1 ECL; LVDS ECL 3.3 2000 0.34 1 320 SOIC−8; TSSOP−8
MC100LVEP05 AND/NAND 1 CML; ECL; LVDS ECL 2.5; 3.3 3000 0.22 0.2 200 DFN−8; SOIC−8; TSSOP−8
MC10E104 AND/NAND 5 ECL ECL 5 700 0.385 1 700 PLCC−28
MC10E404 AND/NAND 4 ECL ECL 5 700 0.475 1 400 PLCC−28
MC10EL04 AND/NAND 1 ECL ECL 5 2000 0.24 1 350 SOIC−8; TSSOP−8
MC10EL05 AND/NAND 1 ECL ECL 5 2000 0.275 1 350 SOIC−8; TSSOP−8
MC10EP05 AND/NAND 1 CML; ECL ECL 3.3; 5 3000 0.22 0.2 180 SOIC−8; TSSOP−8
MC10EP105 AND/NAND 1 CML; ECL ECL 3.3; 5 3000 0.22 0.2 180 LQFP−32; QFN−32
MC10H102 NOR 4 ECL ECL −5.2 1 1600 PDIP−16; PLLC−20
MC10H103 OR 4 ECL ECL −5.2 1 1800 PDIP−16; PLLC−20
MC100E101 OR/NOR 4 ECL ECL 5 2000 0.35 1 575 PLCC−28
MC100EL01 OR/NOR 1 ECL ECL 5 2000 0.23 1 235 SOIC−8; TSSOP−8
MC100EP01 OR/NOR 1 CML; ECL ECL 3.3; 5 3000 0.27 0.2 180 DFN−8; SOIC−8; TSSOP−8
MC100EP101 OR/NOR 4 CML; ECL ECL 3.3; 5 3000 0.3 0.2 220 LQFP−32; QFN−32
MC100LVEL01 OR/NOR 1 ECL ECL 3.3 2000 0.37 1 320 SOIC−8; TSSOP−8
MC10E101 OR/NOR 4 ECL ECL 5 700 0.35 1 575 PLCC−28
MC10EL01 OR/NOR 1 ECL ECL 5 2000 0.23 1 235 SOIC−8; TSSOP−8
MC10EP01 OR/NOR 1 CML; ECL ECL 3.3; 5 3000 0.27 0.2 180 DFN−8; SOIC−8; TSSOP−8
ON Semiconductor Selector Guide − Clock and Data Distribution
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75
LOGIC GATES (continued)
Device Package
tR & tF Max
(ps)
tJitter Typ
(ps)
tpd Typ (ns)
fToggle Max
(MHz)
VCC Typ
(V)
Output
Level
Input LevelChannelsType
MC10EP101 OR/NOR 4 CML; ECL ECL 3.3; 5 3000 0.3 0.2 220 LQFP−32; QFN−32
MC10H101 OR/NOR 4 ECL ECL −5.2 1 2200 PDIP−16; PLLC−20
MC10H105 OR/NOR 3 ECL ECL −5.2 1 1600 PDIP−16; PLLC−20
NB7L86M SmartGate 1 CML; CMOS;
ECL; LVDS; TTL CML 2.5; 3.3 8000 0.09 0.2 60 QFN−16
NBSG86A SmartGate 1 CML; CMOS;
ECL; LVDS; TTL RSECL 2.5; 3.3 8000 0.165 0.5 65 QFN−16
MC100E107 XOR/XNOR 5 ECL ECL 5 2000 0.41 1 700 PLCC−28
MC100EL07 XOR/XNOR 1 ECL ECL 5 2000 0.26 1 225 DFN−8; TSSOP−8
MC100EP08 XOR/XNOR 1 CML; ECL ECL 3.3; 5 3000 0.25 0.2 180 SOIC−8; TSSOP−8
MC10E107 XOR/XNOR 5 ECL ECL 5 700 0.41 1 700 PLCC−28
MC10EL07 XOR/XNOR 1 ECL ECL 5 2000 0.26 1 225 SOIC−8; TSSOP−8
MC10EP08 XOR/XNOR 1 CML; ECL ECL 3.3; 5 3000 0.25 0.2 180 SOIC−8; TSSOP−8
MC10H107 XOR/XNOR 3 ECL ECL −5.2 1 1600 PDIP−16; PLLC−20
MULTIPLEXERS AND CROSSPOINT SWITCHES
Device
Input / Out-
put Ratio Channels Input Level
Output
Level
VCC Typ
(V)
fMax Typ
(MHz)
tJitter Typ
(ps)
tskew(OO)
Max (ps) tpd Typ (ns) Package
MC100E158 2:1 5 ECL ECL 5 1000 1 60 0.385 PLCC−28
MC100E457 2:1 3 CML; ECL ECL 5 1000 1 40 0.475 PLCC−28
MC100EL56 2:1 2 ECL; LVDS ECL 5 1000 1 80 0.58 SOIC−20W
MC100EL58 2:1 1 ECL ECL 5 1500 1 0.23 DFN−8; SOIC−8; TSSOP−8
MC100EL59 2:1 3 ECL ECL 5 1000 1 100 0.5 SOIC−20W
MC100EP56 2:1 2 CML; ECL ECL 3.3; 5 3000 0.2 100 0.36 QFN−20; SOIC−20W; TSSOP−20
MC100EP58 2:1 1 CML; ECL ECL 3.3; 5 3000 0.2 0.31 SOIC−8; TSSOP−8
MC100LVEL56 2:1 2 ECL; LVDS ECL 3.3 1000 3 80 0.44 SOIC−20W
MC100LVEL58 2:1 1 ECL ECL 3.3 1500 1 0.44 SOIC−8; TSSOP−8
MC100LVEL59 2:1 3 ECL ECL 3.3 1000 1 100 0.5 SOIC−20W
MC10E154 2:1 5 ECL ECL 5 1100 1 50 0.5 PLCC−28
MC10E155 2:1 6 ECL ECL 5 1100 1 75 0.5 PLCC−28
MC10E157 2:1 4 ECL ECL 5 1100 1 70 0.38 PLCC−28
MC10E158 2:1 5 ECL ECL 5 1100 1 60 0.385 PLCC−28
MC10E167 2:1 6 ECL ECL 5 1400 1 75 0.65 PLCC−28
ON Semiconductor Selector Guide − Clock and Data Distribution
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MULTIPLEXERS AND CROSSPOINT SWITCHES (continued)
Device Packagetpd Typ (ns)
tskew(OO)
Max (ps)
tJitter Typ
(ps)
fMax Typ
(MHz)
VCC Typ
(V)
Output
Level
Input LevelChannels
Input / Out-
put Ratio
MC10E457 2:1 3 CML; ECL ECL 5 1000 1 40 0.475 PLCC−28
MC10EL58 2:1 1 ECL ECL 5 1500 1 0.23 SOIC−8; TSSOP−8
MC10EP56 2:1 2 CML; ECL ECL 3.3; 5 3000 0.2 100 0.475 QFN−20; TSSOP−20
MC10EP58 2:1 1 CML; ECL ECL 3.3; 5 3000 0.2 0.31 SOIC−8; TSSOP−8
MC10H158 2:1 4 ECL ECL −5.2 1.5 PDIP−16; PLLC−20
NB100LVEP56 2:1 2 CML; ECL; LVDS ECL 2.5; 3.3 2500 0.2 50 0.7 QFN−24; TSSOP−20
NB4L6254 2:1 2 CML; CMOS;
ECL; LVDS ECL 2.5 3000 0.3 50 485 LQFP−32; QFN−32
NB4L858M 2:1 4 CML; ECL CML 2.5 12 350 LQFP−32
NB4N1158 2:1 2 ECL; TTL ECL 3.3 1000 10 0.375 TSSOP−28
NB4N7132 2:1 1 CML; ECL; LVDS ECL 3.3 750 25 0.375 TSSOP−28
NB4N840M 2:1 2 CML CML 2.5 8000 0.2 20 0.12 QFN−32
NB7L72M 2:1 2 CML; ECL; LVDS CML 2.5; 3.3 8500 0.2 10 150 QFN−16
NB7L86M 2:1 1 CML; CMOS;
ECL; LVDS; TTL CML 2.5; 3.3 8000 0.2 0.09 QFN−16
NB7V585M 2:1 1 CML; ECL; LVDS CML 1.8; 2.5 7000 0.2 30 175 QFN−32
NB7V586M 2:1 1 CML; ECL; LVDS CML 1.8 6000 0.2 30 0.175 QFN−32
NB7V58M 2:1 1 CML; ECL; LVDS CML 1.8; 2.5;
3.3 8000 0.2 50 0.00018 QFN−16
NB7VQ58M 2:1 1 CML; ECL; LVDS CML 1.8; 3.3 8000 0.2 0 0.18 QFN−16
NBSG72A 2:1 2 CML; CMOS;
ECL; LVDS ECL 2.5 7000 25 QFN−16
NBSG86A 2:1 1 CML; CMOS;
ECL; LVDS; TTL RSECL 2.5; 3.3 8000 0.5 20 0.165 QFN−16
NB4L7210 2:10 1 CML; CMOS;
ECL; LVDS ECL 3.3 1000 100 35 725 QFN−52
NB6L72 2:2 1 CML; CMOS;
ECL; LVDS ECL 2.5 3000 0.2 15 0.425 QFN−16
NB6L72M 2:2 1 CML; CMOS;
ECL; LVDS CML 2.5 3000 0.2 20 0.36 QFN−16
NB7V72M 2:2 2 LVDS CML 1.8; 2.5 6000 0.5 30 150 QFN−16
NB7L585 2:6 1 CML; ECL; LVDS ECL 2.5; 3.3 7000 0.2 20 0.175 QFN−32
NB7L585R 2:6 1 CML; ECL; LVDS RSECL 2.5 7000 0.2 20 0.160−0.200 QFN−32
MC100E171 4:1 3 ECL ECL 5 1000 1 60 0.48 PLCC−28
MC100EL57 4:1 1 ECL ECL 5 1000 1 100 0.56 SOIC−16
MC100EP57 4:1 1 CML; ECL ECL 3.3; 5 3000 0.2 200 0.475 QFN−20; TSSOP−20
ON Semiconductor Selector Guide − Clock and Data Distribution
http://onsemi.com
77
MULTIPLEXERS AND CROSSPOINT SWITCHES (continued)
Device Packagetpd Typ (ns)
tskew(OO)
Max (ps)
tJitter Typ
(ps)
fMax Typ
(MHz)
VCC Typ
(V)
Output
Level
Input LevelChannels
Input / Out-
put Ratio
MC10E156 4:1 3 ECL ECL 5 1100 1 50 0.6 PLCC−28
MC10E171 4:1 3 ECL ECL 5 1400 1 60 0.48 PLCC−28
MC10EL57 4:1 1 ECL ECL 5 1000 1 100 0.56 SOIC−16
MC10EP57 4:1 1 CML; ECL ECL 3.3; 5 3000 0.2 200 0.475 QFN−20; TSSOP−20
NB6L572M 4:1 1 CML; ECL; LVDS CML 2.5; 3.3 6000 0.2 15 200 QFN−32
NB6LQ572M 4:1 1 CML; ECL; LVDS CML 2.5; 3.3 6000 0.2 15 0.2 QFN−32
NB7LQ572 4:1 1 CML; ECL; LVDS CML 2.5; 3.3 7000 0.2 15 160 QFN−32
NB6LQ572 4:2 1 CML; ECL; LVDS ECL 2.5; 3.3 6000 0.2 15 0.175 QFN−32
NB6VQ572M 4:2 1 CML; ECL; LVDS CML 1.8; 2.5 5000 0.2 15 0.175 QFN−32
NB7L572 4:2 1 CML; ECL; LVDS ECL 2.5; 3.3 7000 0.5 15 0.175 QFN−32
NB7VQ572M 4:2 1 CML; ECL; LVDS CML 1.8; 3.3 7000 0.2 15 175 QFN−32
MC100E163 8:1 2 ECL ECL 5 1000 1 40 0.55 PLCC−28
MC10E163 8:1 2 ECL ECL 5 1100 1 40 0.55 PLCC−28
MC10H164 8:1 1 ECL ECL −5.2 1 PDIP−16; PLLC−20
MC100E164 16:1 1 ECL ECL 5 1000 1 50 0.6 PLCC−28
MC100LVE164 16:1 1 ECL ECL 3.3 1000 1 50 0.6 LQFP−32
MC10E164 16:1 1 ECL ECL 5 1100 1 50 0.6 PLCC−28
SERIAL/PARALLEL CONVERTERS
Device Type Bits
Input
Level
Output
Level
VCC Typ
(V) fdr Typ (Gb/sec)
tpd Typ
(ns)
tsu Min
(ns)
th Min
(ns)
tJitter Typ
(ps) tR & tF Max (ps) Package
MC100E445 Serial/Parallel 4 ECL ECL 5 2 1.8 −0.25 0.3 1 350 PLCC−28
MC100E446 Parallel/Serial 4 ECL ECL 5 1.6 1.2 −0.45 0.65 1 350 PLCC−28
MC10E445 Serial/Parallel 4 ECL ECL 5 2 1.8 −0.25 0.3 1 350 PLCC−28
MC10E446 Serial/Parallel 4 ECL ECL 5 2 1.8 −0.25 0.3 1 350 PLCC−28
MC100EP445 Serial/Parallel 8 CML;
ECL ECL 3.3; 5 2.5 1.3 −0.4 0.6 0.2 300 LQFP−32; QFN−32
MC100EP446 Parallel/Serial 8 CML;
ECL ECL 3.3; 5 3.4 0.8 −0.45 −0.6 0.2 170 LQFP−32; QFN−32
MC10EP445 Serial/Parallel 8 CML;
ECL ECL 3.3; 5 2.5 1.3 −0.4 0.6 0.2 300 LQFP−32
MC10EP446 Parallel/Serial 8 CML;
ECL ECL 3.3; 5 3.4 0.8 −0.45 −0.6 0.2 170 LQFP−32; QFN−32
ON Semiconductor Selector Guide − Clock and Data Distribution
http://onsemi.com
78
SKEW MANAGEMENT
Device Input Level
Output
Level VCC Typ (V) fMax Typ (MHz) td(prog) Min (ns) td(prog) Max (ns) td(step) Typ (ps)
tJitter Typ
(ps) tR & tF Max (ps) Package
MC100E195 ECL ECL 5 1000 2.05 2.6 20 5 325 PLCC−28
MC100E196 ECL ECL 5 1000 2.05 2.6 20 5 325 PLCC−28
MC100EP195 CML; ECL ECL 3.3 1200 2.2 12.2 10 1 300 LQFP−32; QFN−32
MC100EP195B CML; ECL;
LVDS ECL 3.3 1200 2.2 12 10 3 300 LQFP−32; QFN−32
MC100EP196 CML; ECL ECL 3.3 1200 2.2 12.2 10 3 210 LQFP−32
MC100EP196B CML; ECL;
LVDS ECL 3.3 1200 8.95 12.11 11 1.2 165 LQFP−32; QFN−32
MC10E195 ECL ECL 3.3 1000 2.05 2.6 20 5 325 PLCC−28
MC10E196 ECL ECL 3.3 1000 2.05 2.6 20 5 325 PLCC−28
MC10EP195 CML; ECL ECL 3.3 1200 2.2 12.2 10 3 300 LQFP−32; QFN−32
NB6L295 CML; ECL;
LVDS ECL 2.5; 3.3 1500 6.2 6.2 11 3 150 QFN−24
NB6L295M CML;
CMOS;
ECL; LVDS
CML 2.5; 3.3 1500 6.2 6.2 11 2.4 150 QFN−24
TRANSLATORS
Device Channels Input Level Output Level VCC Typ (V) fMax Typ (MHz) tpd Typ (ns) tR & tF Max (ps) Package
MC100ELT20 1 TTL ECL 5 100 1.2 1500 SOIC−8; TSSOP−8
MC100ELT21 1 ECL TTL 5 100 3.5 750 SOIC−8; TSSOP−8
MC100ELT24 1 TTL ECL 5 400 0.95 1250 DFN−8; SOIC−8;
TSSOP−8
MC100ELT25 1 ECL TTL 5 100 2.6 2300 DFN−8; SOIC−8;
TSSOP−8
MC100EPT20 1 CMOS; TTL ECL 3.3 1000 0.37 180 DFN−8; SOIC−8;
TSSOP−8
MC100EPT21 1 CML; ECL; LVDS TTL 3.3 350 1.4 500 DFN−8; SOIC−8;
TSSOP−8
MC100EPT24 1 CMOS; TTL ECL 3.3 1000 0.53 180 DFN−8; SOIC−8;
TSSOP−8
MC100EPT25 1 ECL TTL 3.3 275 1.1 1100 DFN−8; SOIC−8;
TSSOP−8
MC100EPT26 1 ECL TTL 3.3 275 1.5 900 DFN−8; SOIC−8;
TSSOP−8
MC100LVELT20 1 CMOS; TTL ECL 3.3 1000 0.37 180 SOIC−8
MC10ELT20 1 TTL ECL 5 100 1.2 1500 SOIC−8; TSSOP−8
MC10ELT21 1 ECL TTL 5 100 3.5 750 TSSOP−8