2N7000TA - ON SEMICONDUCTOR - searchdatasheet.com

2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET

2N7000BU / 2N7000TA Rev. 1.5 1

September 2016

2N7000BU / 2N7000TA

Advanced Small-Signal MOSFET

Features

• Fast Switching Times

• Improved Inductive Ruggedness

• Lower Input Capacitance

• Extended Safe Operating Area

• Improved High-Temperature Reliability

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwi se noted.

Note:

1. Repetitive rating: pulse width limited by maximum junction temperature.

Part Number Marking Package Packing Method

2N7000BU 2N7000 TO-92 3L Bulk

2N7000TA 2N7000 TO-92 3L Ammo

Symbol Parameter Value Unit

VDSS Drain-to-Source Voltage 60 V

ID Continuous Drain Current (TC = 25°C) 200 mA

Continuous Drain Current (TC = 100°C) 110

IDM Drain Current Pulsed(1) 1000 mA

VGS Gate-to-Source Voltage ±30 V

TJ, TSTG Operating Junction and S torage Temperature Range -55 to 150 °C

TL Maximum Lead Temperature for Soldering Purposes,

1/8-inch from Case for 5 Seconds 300 °C

Description

These N-channel enhancement m ode field effect transis-

tors are produced using Fairchild's proprietary, high cell

density, DMOS techno logy. These produ cts minimize on-

state resistance while providing rugged, reliable, and fast

switching performance. They can be used in most appli-

cations requiring up to 400 mA DC and can deliver pulsed

currents up to 2 A. These products are particularl y suited

for low-voltage, low-current applications, such as small

servo motor control, power MOSFET gate drivers, and

other switching applications.

1. Source 2. Gate 3. Drain

TO-92

2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET

2N7000BU / 2N7000TA Rev. 1.5 2

Thermal Characteristics(2)

Values are at TC = 25°C unless otherwise noted.

Note:

2. Device mounted on FR-4 PCB, board size = 101.5 mm x 114.5 mm.

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Notes:

3. Pulse test: pulse width = 250 s, duty cycle 2%.

4. Essentially independent of operating temperature.

Symbol Parameter Value Unit

PD Total Power Dissipation (TC = 25°C) 400 mW

Linear Derating Factor 3.2 mW/°C

RJA Thermal Resistance, Junction to Ambient 312.5 °C/W

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Vo ltage VGS = 0 V, ID = 250 A60 V

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A0.33.9

VDS = VGS, ID = 1 mA 0.4 3.0

IGSS Gate-Source Leakage, Forward VGS = 15 V 100 nA

Gate-Source Lea kage, Reverse VGS = -15 V -100

IDSS Drain-to-Source Leaka ge Current VDS = 60 V 1 A

VDS = 45 V, TC = 125°C 1000

RDS(ON) Static Drain-Source

On-State Resistance(3) VGS = 10 V, ID = 0.5 A 5.0 

gfs Forward Transconductance(3) VDS = 15 V, ID = 0.5 A 0.1 0.3 S

Ciss Input Capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz 30 pF

Coss Output Capacitance 12 pF

Crss Reverse Transfer Capacitance 3.0 pF

td(on) Turn-On Delay VDD = 30 V, ID = 0.5 A,

RG = 15 (3),(4)

10 ns

tr Rise Time 10 ns

td(off) Turn-Off Delay 10 ns

tf Fall Time 10 ns

2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET

2N7000BU / 2N7000TA Rev. 1.5 3

Physical Dimensions

Figure 1. 3-LEAD, TO-92, JEDEC TO-92 COMPLIANT STRAIGHT LEA D CONFIGURATION

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.

TO-92

2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET

2N7000BU / 2N7000TA Rev. 1.5 4

Physical Dimensions (Continued)

Figure 2. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F.pdf.

TO-92

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Rev. I77