DATA SH EET
Product data sheet
Supersedes data of 1999 May 11
2004 Jan 14
DISCRETE SEMICONDUCTORS
BAV74
High-speed double diode
db
ook, halfpage
M3D088
2004 Jan 14 2
NXP Semiconductors Product data sheet
High-speed double diode BAV74
FEATURES
•Small plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage: max. 50 V
•Repetitive peak reverse voltage: max. 60 V
•Repetitive peak forward current: max. 450 mA.
APPLICATIONS
•High-speed s witching in thick and thin-film circuits.
DESCRIPTION
The BAV74 consists of two hig h-s peed switching diode s
with common cathodes, fabricate d in pla nar technology,
and encapsula ted in a small SOT23 plast ic SMD package.
MARKING
Note
1. * = p : Made in Hong Kong .
* = t : Made in Malaysia.
* = W: Made in China.
PINNING
TYPE NUMBER MARKING CODE(1)
BAV74 JA*
PIN DESCRIPTION
1anode (a1)
2anode (a2)
3cathode
Fig.1 Simplified outline (SOT23 ) and symbo l .
lum
ns 21
3
Top view
MAM108
21
3
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak rev erse
voltage −60 V
VRcontinuous re ve rse volta ge −50 V
IFcontinuous forward current single diode loaded; note 1; see Fig.2 −215 mA
double diode loaded; note 1; see Fig.2 −125 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repe titive peak forward
current square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 µs−4 A
t = 1 ms −1 A
t = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW
Tstg storage tempe ra t u re −65 +150 °C
Tjjunction temperature −150 °C
2004 Jan 14 3
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode BAV74
ORDERING INFORMATION
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board .
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BAV74 −plastic surface mounted package; 3 leads SOT23
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 1 mA 715 mV
IF = 10 mA 855 mV
IF = 100 mA 1.0 V
IRreverse current see Fig.5
VR = 25 V 30 nA
VR = 50 V 0.1 µA
VR = 25 V; Tj = 150 °C30 µA
VR = 50 V; Tj = 150 °C100 µA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 1.5 pF
trr reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
4ns
Vfr forward recove ry voltage when switched from IF = 10 mA;
tr = 20 ns; see Fig.8 1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point 360 K/W
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Jan 14 4
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode BAV74
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a func tion of ambient
temperature.
0 200
300
0
100
200
MBD033
100
IF
(mA)
T ( C)
amb o
single diode loaded
double diode loaded
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG383
1VF (V)
(1) (3)(2)
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of puls e duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
2004 Jan 14 5
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode BAV74
Fig.5 Reverse current as a fun ction of junc tion
temperature.
handbook, halfpage
105
104
10 200
0
MBG376
100
IR
(nA)
103
102
(1) (2) (3)
Tj (oC)
(1) VR = 50 V; maximum values.
(2) VR = 50 V; typical values.
(3) VR = 25 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
0816124
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
2004 Jan 14 6
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode BAV74
Fig.7 Reverse reco very voltage test circuit and waveforms.
(1) IR = 1 mA.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
2004 Jan 14 7
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode BAV74
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2004 Jan 14 8
NXP Semiconductors Pr oduct dat a shee t
High-speed double diode BAV74
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form part o f an y q uot ation or co ntract, is believed to b e a ccur ate a nd reliable and may be change d
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R76/04/pp9 Date of release: 2004 Jan 14 Document orde r number: 9397 750 12392
