DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BAV74 High-speed double diode Product data sheet Supersedes data of 1999 May 11 2004 Jan 14 NXP Semiconductors Product data sheet High-speed double diode BAV74 FEATURES PINNING * Small plastic SMD package PIN DESCRIPTION * High switching speed: max. 4 ns 1 anode (a1) * Continuous reverse voltage: max. 50 V 2 anode (a2) * Repetitive peak reverse voltage: max. 60 V 3 cathode * Repetitive peak forward current: max. 450 mA. APPLICATIONS * High-speed switching in thick and thin-film circuits. 2 lumns 1 DESCRIPTION 2 The BAV74 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in a small SOT23 plastic SMD package. 1 3 3 MAM108 Top view MARKING TYPE NUMBER MARKING CODE(1) BAV74 Fig.1 Simplified outline (SOT23) and symbol. JA* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W: Made in China. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current - 60 V - 50 V single diode loaded; note 1; see Fig.2 - 215 mA double diode loaded; note 1; see Fig.2 - 125 mA - 450 mA t = 1 s - 4 A t = 1 ms - 1 A t=1s - 0.5 A - 250 mW square wave; Tj = 25 C prior to surge; see Fig.4 Tamb = 25 C; note 1 Ptot total power dissipation Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 2004 Jan 14 2 NXP Semiconductors Product data sheet High-speed double diode BAV74 ORDERING INFORMATION TYPE NUMBER BAV74 PACKAGE NAME - DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 100 mA 1.0 V VR = 25 V 30 nA VR = 50 V 0.1 A VR = 25 V; Tj = 150 C 30 A VR = 50 V; Tj = 150 C 100 A see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-tp) thermal resistance from junction to tie-point Rth(j-a) thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Device mounted on an FR4 printed-circuit board. 2004 Jan 14 3 VALUE UNIT 360 K/W 500 K/W NXP Semiconductors Product data sheet High-speed double diode BAV74 GRAPHICAL DATA MBD033 300 MBG383 300 handbook, halfpage IF (mA) IF (mA) (1) (3) single diode loaded double diode loaded 100 100 0 0 0 100 o T amb ( C) 200 0 1 2 VF (V) (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 (2) 200 200 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 10 102 103 tp (s) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Jan 14 4 104 NXP Semiconductors Product data sheet High-speed double diode BAV74 MBG376 5 10halfpage handbook, Cd (pF) IR (nA) 10 10 10 MBG446 0.8 handbook, halfpage 4 0.6 (1) 3 (2) (3) 0.4 2 10 0.2 0 0 100 Tj (oC) 0 200 (1) VR = 50 V; maximum values. (2) VR = 50 V; typical values. (3) VR = 25 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 2004 Jan 14 5 4 8 12 VR (V) 16 Diode capacitance as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet High-speed double diode BAV74 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 IF SAMPLING OSCILLOSCOPE t rr t R i = 50 V = VR I F x R S (1) 90% VR MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 V I 90% R S = 50 D.U.T. OSCILLOSCOPE V fr R i = 50 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 2004 Jan 14 6 t tp output signal NXP Semiconductors Product data sheet High-speed double diode BAV74 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Jan 14 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 7 NXP Semiconductors Product data sheet High-speed double diode BAV74 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to 2004 Jan 14 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/04/pp9 Date of release: 2004 Jan 14 Document order number: 9397 750 12392