Wig ww fe ce me NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS ra. = a 8 [a THE MPS-A42, MPS-A43 ARE NPN SILICON PLANAR TRANSISTORS FOR GENERAL PURPOSE HIGH VOLTAGE APPLICATIONS SUCH AS TV VIDEO OUTPUT STAGE AND GAS DISCHARGE TUBE DRIVER. ABSOLUTE MAXIMUM RATINGS MPS-A42 MPS-A43 Collector-Base Voltage VCBO 300V 200V Collector-Emitter Voltage VCEO Z300V 2000 Emitter-Base Voltage VEBO 6V 6V Collector Current Ic 100mA Collector Peak Current (+ <10ms) Icom 500mA Total Power Dissipation (TC <25C) Ptot 1.5W (Ta 25C) 625mW Operating Junction & Storage Temperature Tj, Tstg -55 t@ 150C ELECTRICAL CHARACTERISTICS (TA=250C) MPS-Ad42 | MPS-A45 PARAMETER SYMBOL MIN MAX | MIN MAX UNIT | TEST CONDITIONS Collector-Base Breakdown Voltage | BVCBO 300 200 Vv Ic=O.lmA Ip=O Collector-Emitter Breakdown LVCEO 300 200 Vv Ic=lmA Ip=0 Emitter-Base Breakdown Voltage BVEBO 6 6 V Im=O.lmA Ic=0" Collector Cutoff Current IcBo Ool pa Vop=200V Ip=0 O.1 | pA Vop=l60 Ip=0 Emitter Cutoff Current IEBO Ool pA Vape6V Ic=0 Ol | pA Vep=4V Ic=0 Collector-Hnitter Saturation Vou(sat} 0.5 0.4 | V Ic=20mA IB=2mA Voltage Base-Emitter Saturation VBE(sat) 0.9 0.9 | V Ic=20mA Ip=2mA Voltage D.C. Current Gain HFE 25 25 Ic=lmA VcE=10V 40 40 Ic=10mA VcE=1LOV 40 50 200 Ic=30mA VcE=10V Current Gain-Bandwidth Product fp 50 50 MHz| Ic=1lOmA Vog=20V Collector-Base Capacitance Ceb 3 4 | pF VoB=20V Ip=0 f=1MHz MICRO ELECTRONICS LTD. 38 HUNG TO ROAD, KWUN TONG, HONG KONG. KWUN TONG P. 0, BOX69477 CABLE ADDRESS MICROTRON TELEPHONE . oe 3-430181-6 TELEX 43510 PBS 7 SrOSDHES FAX: 3~410321 MPS~A42 . MPS-A43 TYPICAL CHARACTERISTICS if } (Ty=25C unless otherwise noted) 0 Vpr(sat) & VCE(sat) ve Ic 200 Ic=10Ig se test 160 3 120 HFE (Y) 4 80 40 0.3 Pulse Test o.1 #1 10 100 1000 ton 1 10 100 I (ma) _ Ic (ma) Cy a r Cob vs Vos Ves (Vv) t) 12.77. 7300B