FAIRGCHILO ESE RIEL PES oy PN100 PN100A Discrete POWER & Signal Technologies MMBT100 MMBT100A SOT-23 B Mark: NA/NA1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Abso I ute Maxi m u m Rati ngs* TA=25C unless otherwise noted Symbol Parameter Value Units VocEo Collector-Emitter Voltage 45 Vv Voso Collector-Base Voltage 75 Vv VeEBo Emitter-Base Voltage 6.0 Vv Io Collector Current - Continuous 500 mA Tu, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA= 25C unless otherwise noted Symbol Characteristic Max Units PN100A *MMBT100A Pp Total Device Dissipation 625 350 mw Derate above 25C 5.0 2.8 mw/rc Rosc Thermal Resistance, Junction to Case 83.3 C/W Rosa Thermal Resistance, Junction to Ambient 200 357 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation VOOLLGININ / VOOLNd / OOLLEININ / OOLNd NPN General Purpose Amplifier (continued) Electrical Characteristics TA= 25C unless otherwise noted Symbol Parameter Test Conditions Min | Max | Units OFF CHARACTERISTICS BVcgo Collector-Base Breakdown Voltage lo = 10 pA, Ip = 0 75 Vv BV ceo Collector-Emitter Breakdown Voltage* | Ip =1 mA, le =0 45 Vv BVego Emitter-Base Breakdown Voltage le=10 pA, lo =0 6.0 Vv leBo Collector Cutoff Current Vog = 60 V 50 nA loes Collector Cutoff Current Voce = 40 V 50 nA leBo Emitter Cutoff Current Vep=4V 50 nA ON CHARACTERISTICS Hee DC Current Gain Io = 100 WA, Vee = 1.0 V 100 80 100A 240 lg = 10 mA, Vee = 1.0 V 100 100 450 100A 300 600 Ig = 100 mA, Voge = 1.0 V* 100 Ig = 150 mA, Voge = 5.0 V* 100 100 350 100A 100 Vee(sat) Collector-Emitter Saturation Voltage lc = 10 mA, Ip = 1.0 mA 0.2 Vv Io = 200 mA, I3 = 20 mA* 0.4 Vv Veewat) Base-Emitter Saturation Voltage lo =10 mA, Ip = 1.0 mA 0.85 Vv Io = 200 mA, I3 = 20 mA* 1.0 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product Voce = 20 V, lo = 20 MA 250 MHz Cobo Output Capacitance Vos = 5.0 V, f = 1.0 MHz 45 pF NF Noise Figure Io = 100 WA, Vee = 5.0 V, 100 5.0 dB Re = 2.0 kQ, f = 1.0 kHz 100A 4.0 dB *Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0% Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current a Qo oO IN B =10 nN wo 3S 3 56 56 w 2 56 hre- TYPICAL PULSED CURRENT GAIN 0 10 20 630 50 100 200 300 500 Ic - COLLECTOR CURRENT (mA) 10 100 400 Ic- COLLECTOR CURRENT (mA) Vizag COLLECTOR-EMITTER VOLTAGE (V) iy VOOLLGININ / VOOLNd / OOLLEININ / OOLNd NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current for) eS n B =10 ip 1 10 100 300 Ic- COLLECTOR CURRENT (mA) Voes COLLECTOR-EMITTER VOLTAGE (V) o 9 Collector-Cutoff Current vs Ambient Temperature 10 logo7 COLLECTOR CURRENT (nA) o a 25 50 75 100 125 150 T,- AMBIENT TEMPERATURE ( c) Switching Times vs Collector Current 300 270 240 210 eg 180 w 150 = 120 90 60 30 0 10 20330 50 100 Ic - COLLECTOR CURRENT (mA) 200 300 Base-Emitter ON Voltage vs Collector Current i Vog =5V i) Vicor BASE-EMITTER ON VOLTAGE (V) Qo Oo 1 10 100 500 Ic- COLLECTOR CURRENT (mA) Input and Output Capacitance vs Reverse Voltage 100 f= 1.0 MHz c mw 10 oO a EF oO : 1 a oO 0.1 0.1 1 10 100 Vee- COLLECTOR VOLTAGE(V) Power Dissipation vs Ambient Temperature 700 2 600 z 2 500 a a a 400 o 300 co = 5 200 a 4, 100 a oO 0 256 50 75 100 125 150 TEMPERATURE (C) VOOLLGININ / VOOLNd / OOLLEININ / OOLNd