TLP151A Photocouplers GaAAs Infrared LED & Photo IC TLP151A 1. Applications * Transistor Inverters * MOSFET Gate Drivers * IGBT Gate Drivers 2. General The TLP151A is a photocoupler in a SO6 package that consists of a GaAAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. The photodetector has an internal Faraday shield that provides a guaranteed common-mode transient immunity. TLP151A is suitable for direct gate driving circuit for small capacity IGBTs or power MOSFETs. 3. Features (1) Buffer logic type (Totem pole output) (2) Package type: SO6 (3) Output peak current: 0.6 A (max) (4) Operating temperature: -40 to 110 (5) Supply voltage: 10 to 30 V (6) Threshold input current: 5.0 mA(max) (7) Propagation delay time: 500 ns (max) (8) Common-mode transient immunity: 20 kV/s (min) (9) Isolation voltage: 3750 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5 (Note 1) Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4) (V4). 4. Packaging and Pin Assignment 1: Anode 3: Cathode 4: GND 5: VO (Output) 6: VCC 11-4L1S Start of commercial production (c)2015 Toshiba Corporation 1 2011-05 2017-06-09 Rev.4.0 TLP151A 5. Internal Circuit (Note) Fig. 5.1 Internal Circuit Note: A 0.1-F bypass capacitor must be connected between pin 6 and pin 4. 6. Principle of Operation 6.1. Truth Table Input LED M1 M2 Output H ON ON OFF H L OFF OFF ON L 6.2. Mechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 (c)2015 Toshiba Corporation 2 2017-06-09 Rev.4.0 TLP151A 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics LED Symbol Input forward current Input forward current derating Rating Unit IF 25 mA (Ta 95 ) IF/Ta -0.67 mA/ (Ta 95 ) IFP/Ta Input forward current (pulsed) Input forward current derating (pulsed) Note IFP (Note 1) 1 A -25 mA/ Input reverse voltage VR 5 V Input power dissipation PD 40 mW Input power dissipation derating (Ta 95 ) -1.0 mW/ IOPH (Note 2) -0.6 A Peak low-level output current IOPL (Note 2) +0.6 A Output voltage VO 35 V Supply voltage VCC 35 V Output power dissipation PO 80 mW PO/Ta -2.0 mW/ Topr -40 to 110 Detector Peak high-level output current Output power dissipation derating (Ta 95 ) Common Operating temperature Storage temperature Lead soldering temperature Isolation voltage PD/Ta -55 to 125 (10 s) Tstg Tsol (Note 3) 260 AC, 60 s, R.H. 60 % BVS (Note 4) 3750 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 1 s, 300 pps Note 2: Exponential waveform. Pulse width 2 s, f 10 kHz, Duty = 50 % Note 3: 2 mm below seating plane. Note 4: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. 8. Recommended Operating Conditions (Note) Characteristics Symbol Input on-state current IF(ON) Input off-state voltage Note Min Typ. Max Unit 7.5 15 mA VF(OFF) 0 0.8 V Supply voltage VCC 10 30 V Peak high-level output current IOPH -0.2 A Peak low-level output current IOPL +0.2 A Operating temperature Topr -40 110 (Note 1) Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. Note: A ceramic capacitor (0.1 F) should be connected between pin 6 and pin 4 to stabilize the operation of a highgain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be placed within 1 cm of each pin. Note 1: Denotes the operating range, not the recommended operating condition. (c)2015 Toshiba Corporation 3 2017-06-09 Rev.4.0 TLP151A 9. Electrical Characteristics (Note) (Unless otherwise specified, Ta = -40 to 100 ) Characteristics Symbol Input forward voltage Input forward voltage temperature coefficient VF IR Input capacitance Peak low-level output current Test Circuit VF/Ta Input reverse current Peak high-level output current Note Ct IOPH (Note 1) IOPL (Note 1) Fig. 12.1.1 Fig. 12.1.2 Test Condition Min Typ. Max IF = 10 mA, Ta = 25 Unit 1.45 1.55 1.7 V IF = 10 mA -2.0 mV/ VR = 5 V, Ta = 25 10 A V = 0 V, f = 1 MHz, Ta = 25 60 pF IF = 5 mA, VCC = 15 V, V6-5 = 4 V -0.2 A IF = 5 mA, VCC = 15 V, V6-5 = 10 V -0.4 IF = 0 mA, VCC = 15 V, V5-4 = 2 V 0.2 IF = 0 mA, VCC = 15 V, V5-4 = 10 V 0.4 High-level output voltage VOH Fig. 12.1.3 IF = 5 mA, VCC = 10 V, IO = -100 mA 6.0 8.5 Low-level output voltage VOL Fig. 12.1.4 VF = 0.8 V, VCC = 10 V, IO = 100 mA 0.35 1.0 High-level supply current ICCH Fig. 12.1.5 IF = 10 mA, VCC = 10 to 30 V, VO = Open 2.0 Low-level supply current ICCL Fig. 12.1.6 IF = 0 mA, VCC = 10 to 30 V, VO = Open 2.0 Threshold input current (L/H) IFLH VCC = 15 V, VO > 1 V 5.0 Threshold input voltage (H/L) VFHL VCC = 15 V, VO < 1 V 0.8 Supply voltage VCC 10 30 V mA V Note: Note: All typical values are at Ta = 25 . This device is designed for low power consumption, making it more sensitive to ESD than its predecessors. Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems. Note 1: IO application time 50 s, single pulse. 10. Isolation Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Total capacitance (input to output) CS (Note 1) VS = 0 V, f = 1 MHz Isolation resistance RS (Note 1) VS = 500 V, R.H. 60 % Isolation voltage BVS Note Test Condition (Note 1) AC, 60 s. Min Typ. Max Unit 0.8 pF 1 x 1012 1014 Vrms 3750 AC, 1 s in oil 10000 DC, 60 s. in oil 10000 Vdc Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. (c)2015 Toshiba Corporation 4 2017-06-09 Rev.4.0 TLP151A 11. Switching Characteristics (Note) (Unless otherwise specified, Ta = -40 to 100 ) Characteristics Symbol Note Test Circuit Min Typ. Max Unit IF = 0 5 mA, VCC = 30 V, Rg = 47 , Cg = 3 nF, Ta = 25 450 ns Propagation delay time (L/H) tpLH Propagation delay time (H/L) tpHL IF = 5 0 mA, VCC = 30 V, Rg = 47 , Cg = 3 nF, Ta = 25 450 Propagation delay time (L/H) tpLH IF = 0 5 mA, VCC = 30 V, Rg = 47 , Cg = 3 nF 30 500 Propagation delay time (H/L) tpHL IF = 5 0 mA, VCC = 30 V, Rg = 47 , Cg = 3 nF 30 500 IF = 0 5 mA, VCC = 30 V, Rg = 47 , Cg = 3 nF 350 Pulse width distortion Fig. 12.1.7 Test Condition |tpHL-tpLH| Fig. 12.1.7 Rise time tr IF = 0 5 mA, VCC = 30 V, Rg = 47 , Cg = 3 nF 50 Fall time tf IF = 5 0 mA, VCC = 30 V, Rg = 47 , Cg = 3 nF 50 VCM = 1000 Vp-p, IF = 5 mA, VCC = 30 V, Ta = 25 , VO(min) = 26 V 20 VCM = 1000 Vp-p, IF = 0 mA, VCC = 30 V, Ta = 25 , VO(max) = 1 V 20 Common-mode transient immunity at output high CMH Common-mode transient immunity at output low CML (Note1) Fig. 12.1.8 ns kV/s Note: All typical values are at Ta = 25 . Note1: CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage in the logic high state (VO > 26 V). CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage in the logic low state (VO < 1 V). (c)2015 Toshiba Corporation 5 2017-06-09 Rev.4.0 TLP151A 12. Test Circuits and Characteristics Curves 12.1. Test Circuits Fig. 12.1.1 IOPH Test Circuit Fig. 12.1.2 IOPL Test Circuit Fig. 12.1.3 VOH Test Circuit Fig. 12.1.4 VOL Test Circuit Fig. 12.1.5 ICCH Test Circuit Fig. 12.1.6 ICCL Test Circuit Fig. 12.1.7 Switching Time Test Circuit and Waveform Fig. 12.1.8 Common-Mode Transient Immunity Test Circuit and Waveform (c)2015 Toshiba Corporation 6 2017-06-09 Rev.4.0 TLP151A 12.2. Characteristics Curves (Note) Fig. 12.2.1 IF - VF Fig. 12.2.2 IF - Ta Fig. 12.2.3 IFLH - Ta Fig. 12.2.4 VOL - Ta Fig. 12.2.5 VOH - Ta Fig. 12.2.6 ICCL - Ta (c)2015 Toshiba Corporation 7 2017-06-09 Rev.4.0 TLP151A Note: Fig. 12.2.7 ICCH - Ta Fig. 12.2.8 VOL - IOPL Fig. 12.2.9 (VOH - VCC) - IOPH Fig. 12.2.10 tpHL,tpLH,|tpHL-tpLH| - Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c)2015 Toshiba Corporation 8 2017-06-09 Rev.4.0 TLP151A 13. Soldering and Storage 13.1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespective of whether a soldering iron or a reflow soldering method is used. * When using soldering reflow. The soldering temperature profile is based on the package surface temperature. (See the figure shown below, which is based on the package surface temperature.) Reflow soldering must be performed once or twice. The mounting should be completed with the interval from the first to the last mountings being 2 weeks. Fig. 13.1.1 An Example of a Temperature Profile Fig. 13.1.2 An Example of a Temperature Profile When Sn-Pb Eutectic Solder Is Used When Lead(Pb)-Free Solder Is Used * When using soldering flow (Applicable to both eutectic solder and Lead(Pb)-Free solder) Preheat the device at a temperature of 150 (package surface temperature) for 60 to 120 seconds. Mounting condition of 260 within 10 seconds is recommended. Flow soldering must be performed once. * When using soldering Iron Complete soldering within 10 seconds for lead temperature not exceeding 260 or within 3 seconds not exceeding 350 Heating by soldering iron must be done only once per lead. 13.2. Precautions for General Storage * Avoid storage locations where devices may be exposed to moisture or direct sunlight. * Follow the precautions printed on the packing label of the device for transportation and storage. * Keep the storage location temperature and humidity within a range of 5 to 35 and 45% to 75%, respectively. * Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. * Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. * When restoring devices after removal from their packing, use anti-static containers. * Do not allow loads to be applied directly to devices while they are in storage. * If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. (c)2015 Toshiba Corporation 9 2017-06-09 Rev.4.0 TLP151A 14. Land Pattern Dimensions for Reference Only Unit: mm 15. Marking (c)2015 Toshiba Corporation 10 2017-06-09 Rev.4.0 TLP151A Package Dimensions Unit: mm Weight: 0.08 g (typ.) Package Name(s) TOSHIBA: 11-4L1S (c)2015 Toshiba Corporation 11 2017-06-09 Rev.4.0 TLP151A RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. 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Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. (c)2015 Toshiba Corporation 12 2017-06-09 Rev.4.0