NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3. Reverse Recovery Test conditions: I
F
=0.5A , I
R
=1A, I
RR
=0.25A.
V
RMS
V
DC
V
RRM
I (AV)
I
FSM
@T
A
=5
5 C
PR1001GL thru PR1007GL
FEA T URES
Fast switch ing for hig h efficien c y
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic ma terial has UL flamm a bility classification
94V-0
M ECHANICAL DAT A
Case : JEDEC A-405 molded plastic
Polarity : Color band denotes cathode
Weight : 0.008 ounces, 0.22 grams
Moun ting position : Any
MAXIMUM RATI NGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, dera te c u rr e n t b y 2 0%
PR
1003 GL
200
140
200
PR
1001GL
50
35
50
PR
1007GL
1000
700
1000
PR
1002GL
100
70
100
PR
1006GL
800
560
800
PR
1005 GL
600
420
600
PR
1004GL
400
280
400
Maxim um Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Re c urrent Peak Reverse Volt age
Maximu m R MS Volta ge
Maxim um DC Blocking Voltage
1.0
30
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
Typical Thermal Resistance (N ote 2)
R
0JA
50
C/W
C
J
Typical Junction
Capacitance (Note1)
15
pF
I
R
Maximum DC Reverse Current
at Ra ted DC Blocking Voltage
@T
J
=100 C
@T
J
=25 C 5.0
50
uA
uA
V
F
Maximum f orward Voltage at 1.0A DC
1.3
V
A
A
V
UNIT
V
V
All Dimensions in millimeter
Max.
Mi n.
A-405
Dim.
A
D
C
B 25.4 5.2 0
-
4.10
0.53
2.00 2.7 0
0.6 4
A-405
A
C
D
A
B
Typical Reverse Recovery Time (note 3) T
RR
150
ns
SYMBOL
CHARACTERISTICS
250 500
REVERSE VO LTAGE -
50
to
1000
Volts
FORWARD CURRENT -
1.0
Ampere
FA ST RECOVERY
GLAS S PA SSIVATED RECTIFIERS
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDEB02