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FEATURES
All-silicon time delay
Models with 0.15 ns, 0.25 ns, 0.5 ns, 1 ns,
and 2 ns steps
Programmable using 3-wire serial port or
8-bit parallel port
Leading and trailing edge accuracy
Standard 16-pin DIP or 16-pin SOIC
Economical
Auto-insertable, low profile
Low-power CMOS
TTL/CMOS-compatible
Vapor phase, IR and wave solderable
PIN ASSIGNMENT
PIN DESCRIPTION
IN - Delay Input
P0-P7 - Parallel Program Pins
GND - Ground
OUT - Delay Output
VCC - +5 Volts
S - Mode Select
E- Enable
C - Serial Port Clock
Q - Serial Data Output
D - Serial Data Input
DESCRIPTION
The DS1020 Programmable 8-Bit Silicon Delay Line consists of an 8-bit, user-programmable CMOS
silicon integrated circuit. Delay values, programmed using either the 3-wire serial port or the 8-bit
parallel port, can be varied over 256 equal steps. The fastest model (-15) offers a maximum delay of
48.25 ns with an incremental delay of 0.15 ns, while the slowest model (-200) has a maximum delay of
520 ns with an incremental delay of 2 ns. All models have an inherent (step-zero) delay of 10 ns. After
the user-determined delay, the input logic state is reproduced at the output without inversion. The
DS1020 is TTL- and CMOS-compatible, capable of driving 10 74LS-type loads, and features both rising
and falling edge accuracy.
The all-CMOS DS1020 integrated circuit has been designed as a reliable, economic alternative to hybrid
programmable delay lines. It is offered in a standard 16-pin auto-insertable DIP and a space-saving
surface mount 16-pin SOIC.
DS1020
Programmab le 8-Bit
Silicon Dela
y
Line
www.dalsemi.com
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VCC
OUT
S
P7
P6
C
P5
D
IN
E
Q/PO
P1
P2
P3
P4
GND
DS1020 16-pin DIP (300-mil)
See Mech. Drawin
g
s Section
Q/PO
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VCC
OUT
S
P7
P6
C
P5
D
IN
E
P1
P2
P3
P4
GND
DS1020S 16-pin SOIC (300-mil)
See Mech. Drawin
g
s Section
DS1020
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PARALLEL MODE (S=1)
In the PARALLEL programming mode, the output of the DS1020 will reproduce the logic state of the
input after a delay determined by the state of the eight program input pins P0 - P7. The parallel inputs can
be programmed using DC levels or computer-generated data. For infrequent modification of the delay
value, jumpers may be used to connect the input pins to VCC and ground. For applications requiring
frequent timing adjustment, DIP switches should be used. The enable pin (E) must be at a logic 1 in
hardwired implementations.
Maximum flexibility is obtained when the eight parallel programming bits are set using computer-
generated data. When the data setup (tDSE) and data hold (tDHE) requirements are observed, the enable pin
can be used to latch data supplied on an 8-bit bus. Enable must be held at a logic 1 if it is not used to latch
the data. After each change in delay value, a settling time (tEDV or tPDV) is required before input logic
levels are accurately delayed.
Since the DS1020 is a CMOS design, unused input pins (D and C) must be connected to well-defined
logic levels; they must not be allowed to float.
SERIAL MODE (S = 0)
In the SERIAL programming mode, the output of the DS1020 will reproduce the logic state of the input
after a delay time determined by an 8-bit value clocked into serial port D. While observing data setup
(tDSC) and data hold (tDHC) requirements, timing data is loaded in MSB-to-LSB order by the rising edge of
the serial clock (C). The enable pin (E) must be at a logic 1 to load or read the internal 8-bit input register,
during which time the delay is determined by the last value activated. Data transfer ends and the new
delay value is activated when enable (E) returns to a logic 0. After each change, a settling time (tEDV) is
required before the delay is accurate.
As timing values are shifted into the serial data input (D), the previous contents of the 8-bit input register
are shifted out of the serial output pin (Q) in MSB-to-LSB order. By connecting the serial output of one
DS1020 to the serial input of a second DS1020, multiple devices can be daisy-chained (cascaded) for
programming purposes (Figure 3). The total number of serial bits must be eight times the number of units
daisy-chained and each group of 8 bits must be sent in MSB-to-LSB order.
Applications can read the setting of the DS1020 delay line by connecting the serial output pin (Q) to the
serial input (D) through a resistor with a value of 1k to 10k ohms (Figure 2). Since the read process is
destructive, the resistor restores the value read and provides isolation when writing to the device. The
resistor must connect the serial output (Q) of the last device to the serial input (D) of the first device of a
daisy-chain (Figure 3). For serial readout with automatic restoration through a resistor, the device used to
write serial data must go to a high impedance state.
To initiate a serial read, enable (E) is taken to a logic 1 while serial clock (C) is at a logic 0. After a
waiting time (tEQV), bit 7 (MSB) appears on the serial output (Q). On the first rising (0 1) transition of
the serial clock (C), bit 7 (MSB) is rewritten and bit 6 appears on the output after a time tCQV. To restore
the input register to its original state, this clocking process must be repeated 8 times. In the case of a
daisy-chain, the process must be repeated 8 times per package. If the value read is restored before enable
(E) is returned to logic 0, no settling time (tEDV) is required and the programmed delay remains
unchanged.
Since the DS1020 is a CMOS design, unused input pins (P1 - P7) must be connected to well-defined logic
levels; they must not be allowed to float. Serial output Q/P0 should be allowed to float if unused.
DS1020
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FUNCTIONAL BLOCK DIAGR AM Figure 1
SERIAL READOUT Figure 2
DS1020
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CASCADING MULTIPLE DEVICES (DAISY CHAIN) Figure 3
PART NUMBER TABLE Table 1
DELAYS AND TOLERANCES (IN ns)
PART
NUMBER STEP ZERO
DELAY TIME MAX DELAY
TIME (NOM) DELAY CHANGE
PER STEP (NOM) MAX DEVIATION FROM
PROGRAMMED DELAY
DS1020-15 10 ± 2 48.25 0.15 ±4
DS1020-25 10 ± 2 73.75 0.25 ±6
DS1020-50 10 ± 2 137.5 0.5 ±8
DS1020-100 10 ± 2 265 1 ±20
DS1020-200 10 ± 3 520 2 ±40
DELAYS VS. PROGRAMMED VALUE Table 2
MIN
DELAY
STEP ZERO
MAX
DELAY
PARALLEL
PORT
SERIAL
PORT
BINARY 000000 111P7MSB
PROGRAMMED 000000 111P6
VALUE 000000 111P5
000000 111P4
000000 111P3
000011 111P2
PART 001100 011P1
NUMBER 010101 101P0LSB
DS1020-15 10.00 10.15 10.30 10.45 10.60 10.75 47.95 48.10 48.25
DS1020-25 10.00 10.25 10.50 10.75 11.00 11.25 73.25 73.50 73.75
DS1020-50 10.0 10.5 11.0 11.5 12.0 12.5 136.5 137.0 137.5
DS1020-100 10 11 12 13 14 15 263 264 265
DS1020-200 10 12 14 16 18 20 516 518 520
All delays in nanoseconds, referenced to input pin.
DS1020
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DALLAS SEMICONDUCTOR TEST CIRCUI T Figure 4
TEST SETUP DESCRIPTION
Figure 4 illustrates the hardware configuration used for measuring the timing parameters of the DS1020.
The input waveform is produced by a precision pulse generator under software control. Time delays are
measured by a time interval counter (20 ps resolution) connected to the output. The DS1020 serial and
parallel ports are controlled by interfaces to a central computer. All measurements are fully automated
with each instrument controlled by the computer over an IEEE 488 bus.
TEST CONDITIONS
INPUT:
Ambient Temperature: 25°C ±=3°C
Supply Voltage (VCC): 5.0V ±=0.1V
Input Pulse: High = 3.0V ±=0.1V
Low = 0.0V ±=0.1V
Source Impedance: 50 ohms max.
Rise and Fall Time: 3.0 ns max.
(measured between
0.6V and 2.4V)
Pulse Width: 500 ns (DS1020–15)
500 ns (DS1020–25)
2 µs (DS1020–50)
4 µs (DS1020–100)
4 µs (DS1020–200)
Period: 1 µs (DS1020–15)
1 µs (DS1020–25)
4 µs (DS1020–50)
8 µs (DS1020–100)
8 µs (DS1020–200)
NOTE: Above conditions are for test only and do not restrict the operation of the device under other data
sheet conditions.
OUTPUT:
Output is loaded with a 74F04. Delay is measured between the 1.5V level of the rising edge of the input
signal and the 1.5V level of the corresponding edge of the output.
DS1020
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ABSOLUTE MAXIMUM RA TINGS*
Voltage on any Pin Relative to Ground -1.0V to +7.0V
Operating Temperature 0°C to 70°C
Storage Temperature -55°C to +125°C
Soldering Temperature 260°C for 10 seconds
Short Circuit Output Current 50 mA for 1 second
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS (0°C to 70°C; VCC = 5.0V ± 5%)
PARAMETER SYM TEST
CONDITION MIN TYP MAX UNITS NOTES
Supply Voltage VCC 4.75 5.00 5.25 V 1
High Level
Input Voltage
VIH 2.2 VCC+0.5 V 1
Low Level
Input Voltage
VIL -0.5 0.8 V 1
Input Leakage
Current
I10 VI VCC -1.0 1.0 µA
Active Current ICC VCC=MAX;
PERIOD=1 µs
30.0 mA 3
High Level
Output Current
IOH VCC=MIN.
VOH=2.7V
-1.0 mA
Low Level
Output Current
IOL VCC=MIN.
VOL=0.5V
8mA4
AC ELEC TRICAL CHARACTERISTICS (0°C to 70°C; VCC = 5V ± 5%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Clock Frequency fC10 MHz
Enable Width tEW 50 ns
Clock Width tCW 50 ns
Data Setup to Clock tDSC 30 ns
Data Hold from Clock tDHC 10 ns
Data Setup to Enable tDSE 30 ns
Data Hold from Enable tDHE 20 ns
Enable to Serial
Output Valid
tEQV 50 ns
Enable to Serial
Output High Z
tEQZ 050ns
Clock to Serial
Output Valid
tCQV 50 ns
Clock to Serial
Output Invalid
tCQX 10 ns
Enable Setup to Clock tES 50 ns
Enable Hold from Clock tEH 50 ns
Parallel Input Valid
to Delay Valid
tPDV 50 µs
DS1020
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(cont’d)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Parallel Input Change
to Delay Invalid
tPDX 0ns
Enable to Delay Valid tEDV 50 µs
Enable to Delay Invalid tEDX 0ns
VCC Valid to Device
Functional
tPU 100 ms
Input Pulse Width tWI 100% of Output
Delay
ns
Input to Output Delay tPLH, tPHL Table 2 ns 2
Input Period Period 2 (tWI)ns
CAPACITANCE (TA = 25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance CIN 10 pF
TIMING DI AGRAM: SILICON DELAY LINE Figure 5
DS1020
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TERMINOLOGY
Period: The time elapsed between the leading edge of the first pulse and the leading edge of the
following pulse.
tWI (Pulse Width): The elapsed time on the pulse between the 1.5V point on the leading edge and the
1.5V point on the trailing edge, or the 1.5V point on the trailing edge and the 1.5V point on the leading
edge.
tRISE (Input Rise Time): The elapsed time between the 20% and the 80% point on the leading edge of the
input pulse.
tFALL (Input Fall Time): The elapsed time between the 80% and the 20% point on the trailing edge of the
input pulse.
tPLH (Time Delay, Rising): The elapsed time between the 1.5V point on the leading edge of the input
pulse and the 1.5V point on the leading edge of the output pulse.
tPHL (Time Delay, Falling): The elapsed time between the 1.5V point on the trailing edge of the input
pulse and the 1.5V point on the trailing edge of the output pulse.
TIMING DIAGRAM: NON-LATCHED PARALLEL MODE (S = 1, E = 1) Figure 6
TIMING DIAGRAM: LATCHED PARALLEL MODE (S=1) Figure 7
DS1020
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TIMING DI AGRAM: SERIAL MODE (S = 0) Figure 8
NOTES:
1. All voltages are referenced to ground.
2. @VCC = 5V and 25°C. Delay accurate on both rising and falling edges within tolerances given in
Table 1.
3. Measured with output open.
4. The “Q” output will only source 4 mA. This pin is only intended to drive other DS1020s.