High-speed double diode BAV74 FEATURES DESCRIPTION PINNING Small plastic SMD package The BAV74 consists of two PIN DESCRIPTION High switching:speed: max. 4 ns high-speed switching diodes with - * co 9 _> Common cathodes, fabricated in 1 anode (a1) ne reverse voltage: planar technology, and encapsulated 2 anode (a2) max. 5 in the small plastic SMD SOT23 3 cathode Repetitive peak reverse voltage: max. 60 V Repetitive peak forward current: max. 450 mA. APPLICATIONS High-speed switching in thick and thin-film circults. package. Top view Marking code: JAp One 3 Fig.1 Simplified outline (SOT23) and symbol. MAM108 LIMITING VALUES in accordance with the Absolute Maximunr Rating System (IEC 134). SYMBOL PARAMETER | CONDITIONS [| min. | MAX. | UNIT Per diode VarM repetitive peak reverse voltage ~ 60 Vv Va continuous reverse voltage ~ 50 Vv Ir continuous forward current single diode loaded; see Fig.2; ~ 215 mA note 1 double diode loaded; see Fig.2; ~ 125 mA note 1 leRu repetitive peak forward current ~ 450 mA lesm non-repetitive peak forward current | square wave; T; = 25 C prior to surge; see Fig.4 t=1us - 4 A t=1ms - 1 A t=1s - 0.5 |A Prot total power dissipation Tamp = 25 C; note 1 - 250 mw Tatg storage temperature -65 | +150) [C Tj junction temperature ~ 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 1-179 Philips Semiconductors Product specification High-speed double diode BAV74 ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS | in. | MAX. | UNIT Per diode Ve forward voltage see Fig.3 lIr=1mA - 718 mV Ip =10mA - 855 mv lr = 100 mA - 10 |V I; reverse current see Fig.5 V_=25V - 30 nA Va =50V - 0.1 [pA Vp = 25 V; T; = 150C - 30 pA Va = 50 V; T; = 150 C - 100 pA Cy diode capacitance f= 1 MHZ; Vp = 0; see Fig.6 - 1.5 | pF tr reverse recovery time when switched from Ir = 10 mA to _ 4 ns In = 10 MA; Ry = 100 2; measured at In = 1 mA; see Fig.7 Vir forward recovery voltage when switched from Ip = 10 mA; - 1.75 1V t, = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Pin j-tp thermal resistance from junction to tie-point 360 KAW Rin ja thermal-resistance from junction to ambient | note 1 500 KAV Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 1-180 Philips Semiconductors Product specification High-speed double diode . BAV74 GRAPHICAL DATA 300 300 IF Ip (mA) (mA) 200 single diode loaded double diode loaded 0 100 200 Tamb (C) Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. 200 o 1 V_e (V) 2 (1) Tj = 150 C; typical values. (2) T, = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.3 forward current as a function of forward voltage. 'Fsm (A) 10-1 Based on square wave currents. T, = 25 C prior to surge. 107 108 tb (us) Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 1-181 Philips Semiconductors Product specification High-speed double diode BAV74 0.8 Cy (pF) 0.68 0.4 0.2 Q 100 Ty; C} 200 0 4 8 12 Va) 16 (1) V_ = 50 V; maximum vaiues. (2) Vp = 50 V; typical values. (3) Va = 25 V; typical values. f= 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse temperature. voltage; typical values. 1996 Sep 17 1-182 Philips Semiconductors 7 Product'specification High-speed double diode BAV74 pot t 7 | tr tp = T { t 10% Rg=500 | I SAMPLING LI L-----~= |osciLLoscore VeVpatipx Rg R,=509 L. | va 90% MGASSi : : input signal output signal {1 i 5 : (1) f_=1mA. Fig.7 Reverse recovery voltage test circuit and waveforms. : Jt. tka 450 7~ | v : 90% i Rig= 50 2 OSCILLOSCOPE Vie i JL R,=50 2 10% : WwaAsa2 | 1 t } i ty tp >1 ; input output : signal signal Fig.8 Forward recovery voltage test circuit and waveforms. | 1996 Sep 17 1-183