©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
MMBT4403K Rev. C
MMBT4403K PNP Epit axial Silicon Transistor
tm
November 200 6
MMBT4403K
PNP Epitaxial Silicon Transistor
Switching Transistor
Absolute Maximum Ratings Ta = 25°C unless otherwis e noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse Widt h≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -600 mA
PCCollector Power Dissipation 350 mW
TJ, TSTG Operating Junc tion and Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = -0.1mA, IE = 0 -40 V
BVCEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -40 V
BVEBO Emitter-Base Breakdown Voltage IE = -0.1mA, IC = 0 -5 V
IBL Base Cut-off Current VCE = -35V, VEB = -0.4V -0.1 µA
ICEX Collector Cut-off Current VCE = -35V, VEB = -0.4V -0.1 µA
hFE DC Current Gain VCE = -1V, IC = -0.1mA
VCE = -1V, IC = -1.0mA
VCE = -1V, IC = -10mA
VCE = -2V, IC = -150mA *
VCE = -2V, IC = -500mA *
30
60
100
100
20 300
VCE (sat) Collector-Emitter Saturation Voltage * IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA -0.4
-0.75 V
V
VBE (sat) Base-Emitter Saturation Voltage * IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA -0.75 -0.95
-1.3 V
V
fTCurrent Gain Bandwidth Product IC = -20mA, VCE = -10V, f = 100MHz 200 MHz
Cob Output Capacitance VCB = -10V, IE = 0, f = 140KHz 8.5 pF
tON Turn On Time VCC = -30V, VBE = -2V
IC = -150mA, IB1 = -15mA 35 ns
tOFF Turn Off Time VCC = -30V, IC = -150mA
IB1 = IB2= -15mA 255 ns
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
2TK
Marking
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MMBT4403K Rev. C
MMBT4403K PNP Epit axial Silicon Transistor
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current
Figure 5. Collector-Base Capacitance Figure 6. Power Dissipation vs
Ambient Temperature
0.1 1 10 100
0
50
100
150
200
250
300
350
400 125oC
75oC
50oC
25oC
0oC
100oCVce=5V
hfe, Current Gain
Collector Current, [m A] 110100
0.0
0.1
0.2
0.3
0.4 125oC
100oC
75oC
50oC
25oC
0oC
Ic=10Ib
Vce(sat), Saturation Current,[V]
Collector Current, [mA]
1 10 100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
125oC
100oC
75oC
50oC
25oC
0oC
Ic=10Ib
Vbe(sat), Saturation Current,[V]
Co llecto r Curre n t, [m A]
-1 -10 -100
1
10
100
f = 140KHz
IE = 0
COb[pF], Capacitance
VCB[V], C ollecto r-B ase Voltage 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
PD - Power Dissipation (W)
Temperature, [ OC]
25 50 75 100 125 150
1
10
VCB = 35V
Leakage current of Collector - Base(nA)
Temperature, ['C ]
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MMBT4403K Rev. C
MMBT4403K PNP Epit axial Silicon Transistor
Mechanical Dimensions
0.96~1.14
0.12
0.03~0.1
0
0.38 RE
F
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.02
3
0.20 MI
N
0.40 ±0.03
SOT-23
Dimensions in Millimeters
TRADEMARKS
The following are regis tered and unr egister ed tradema rks Fairchild Semiconduc tor owns or is authorized to use an d is not int ended to
be an exhaustive list of all such trademarks.
MMBT4403K PNP Epit axial Silicon Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLIC ATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions fo r use provided in the labeling, can be reaso nably expecte d
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be re asonably expected to cause the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains prelim inary data, and
supplementary data will be published at a lat er date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identifica tion Needed Full Production This datasheet contains final sp ecifications. Fa irchild
Semiconductor reserves the right to make changes at
any time withou t notice in order to i m prove design.
Obsolete Not In Production This datasheet contains specifications on a produc t
that has been discontinued by Fair child semiconductor.
The datasheet is printed for reference information only.
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MMBT4403K Rev. C
MMBT4403K PNP Epit axial Silicon Transistor
