MMBT4403K tm PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dissipation 350 mW TJ, TSTG Operating Junction and Storage Temperature Range -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -0.1mA, IE = 0 -40 V BVCEO Collector-Emitter Breakdown Voltage * IC = -1.0mA, IB = 0 -40 V BVEBO Emitter-Base Breakdown Voltage IE = -0.1mA, IC = 0 -5 V IBL Base Cut-off Current VCE = -35V, VEB = -0.4V -0.1 A ICEX Collector Cut-off Current VCE = -35V, VEB = -0.4V -0.1 A hFE DC Current Gain VCE = -1V, IC = -0.1mA VCE = -1V, IC = -1.0mA VCE = -1V, IC = -10mA VCE = -2V, IC = -150mA * VCE = -2V, IC = -500mA * 30 60 100 100 20 300 VCE (sat) Collector-Emitter Saturation Voltage * IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VBE (sat) Base-Emitter Saturation Voltage * IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA fT Current Gain Bandwidth Product IC = -20mA, VCE = -10V, f = 100MHz Cob Output Capacitance VCB = -10V, IE = 0, f = 140KHz 8.5 pF tON Turn On Time VCC = -30V, VBE = -2V IC = -150mA, IB1 = -15mA 35 ns tOFF Turn Off Time VCC = -30V, IC = -150mA IB1 = IB2= -15mA 255 ns -0.75 -0.4 -0.75 V V -0.95 -1.3 V V 200 MHz * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2006 Fairchild Semiconductor Corporation MMBT4403K Rev. C 1 www.fairchildsemi.com MMBT4403K PNP Epitaxial Silicon Transistor November 2006 Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 400 o o 75 C Vce=5V o 100 C Vce(sat), Saturation Current,[V] hfe, Current Gain 350 300 250 200 150 o o 25 C 0 C 100 o 50 C 50 o Ic=10Ib 0.4 125 C 125 C o 100 C 0.3 o 75 C o 50 C 0.2 o 25 C o 0 C 0.1 0.0 0 0.1 1 10 1 100 10 100 Collector Current, [mA] Collector Current, [mA] Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current Leakage current of Collector - Base(nA) 1.0 Ic=10Ib Vbe(sat), Saturation Current,[V] 0.9 o 50 C o 0.8 o 25 C 0 C 0.7 0.6 o 125 C 0.5 o 100 C o 75 C 0.4 V CB = 35V 10 1 0.3 1 10 25 100 50 Collector Current, [mA] 75 100 125 150 Temperature, ['C] Figure 5. Collector-Base Capacitance Figure 6. Power Dissipation vs Ambient Temperature 100 0.4 PD - Power Dissipation (W) COb[pF], Capacitance f = 140K H z IE = 0 10 0.3 0.2 0.1 0.0 1 -1 -10 -100 0 V C B [V ], C ollector-B ase V oltage 50 75 100 125 150 O Temperature, [ C] 2 MMBT4403K Rev. C 25 www.fairchildsemi.com MMBT4403K PNP Epitaxial Silicon Transistor Typical Performance Characteristics MMBT4403K PNP Epitaxial Silicon Transistor Mechanical Dimensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters 3 MMBT4403K Rev. C www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 4 MMBT4403K Rev. 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