FeaturesFeatures
Collector - Emitter Voltage VCEO 50 Vdc
Collector - Base Voltage VCBO 75 Vdc
Emitter - Base Voltage VEBO 6 Vdc
Collector Current - Continuous IC800 mAdc
Total Device Dissipation @ TA = 25 °°C PD0.8 WATTS
Derate above 25 °°C4.6 mW/°°C
Total Device Dissipation @ TC = 25 °°C PD1.0 WATTS
Derate above 25 °°C17.0 mW/°°C
Operating Junction&Storage Temperature Range TJ, Tstg - 55 to +200 °°C
Thermal Characteristics
CHARACTERISTIC SYMBOL MAX UNIT
Thermal Resistance, Junction to Ambient Rθθ JA 217 °°C/W
Thermal Resistance, Junction to Case Rθθ JC 59 °°C/W
SMALL SIGNAL
BIPOLAR
NPN SILICON
SWITCHING
TRANSISTOR
TO-39
Revision: A 2011/01/01
MCC
Collector - Base Voltage 75 V
Collector - Current 800 mA
Medium Current, Bipolar Transistor
Marking: Type number
2N2219A
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Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
ABSOLUTE MAXIMUM RATINGS
omponents
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2N2219A
Electrical Characteristics (TA = 25°C unless otherwise noted)
OFF CHARACTERISTIC SYMBOL MIN MAX UNIT
Collector - Emitter Breakdown Voltage (1) V(BR)CEO
( IC= 10 mA dc, IB= 0 ) 50 Vdc
Collector - Base Breakdown Voltage V(BR)CBO
( IC= 10 µµAdc, IE = 0 ) 75 Vdc
Emitter - Base Breakdown Voltage V(BR)EBO
( IE= 10 µµAdc, IC = 0 ) 6 Vdc
Collector - Emitter Cutoff Current ICES
( VCE = 50 Vdc ) 10 nAdc
Collector - Base Cutoff Current ICBO
( VCB = 60 Vdc, IE = 0 ) 10 nAdc
( VCB = 60 Vdc, IE = 0, TA = 150 °°C ) 10 µµAdc
Emitter - Base Cutoff Current IEBO
( VEB = 4 Vdc ) 10 nAdc
( VEB = 6 Vdc ) 10 µµAdc
ON CHARACTERISTIC SYMBOL MIN MAX UNIT
DC Current Gain hFE
( IC= 0.1 mA dc, VCE = 10 Vdc ) (1) 50
( IC= 1 mA dc, VCE = 10 Vdc ) (1) 75 325
( IC= 10 mA dc, VCE = 10 Vdc ) (1) 100
( IC= 150 mA dc, VCE = 10 Vdc ) (1) 100 300
( IC= 500 mA dc, VCE = 10 Vdc ) (1) 30
( IC= 10 mA dc, VCE = 10 Vdc, TJ= -55°°C ) (1) 35
Collector - Emitter Saturation Voltage VCE(sat)
( IC= 150 mAdc, IB= 15 mAdc ) (1) 0.3 Vdc
( IC= 500 mAdc, IB= 50 mAdc ) (1) 1.0 Vdc
Base - Emitter Saturation Voltage VBE(sat)
( IC= 150 mAdc, IB= 15 mAdc ) (1) 0.6 1.2 Vdc
( IC= 500 mAdc, IB= 50 mAdc ) (1) 2.0 Vdc
1. Pulse Test: Pulse Width 300 µs, Duty Cycle .2%
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Revision: A 2011/01/01
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Electrical Characteristics (TA = 25°C unless otherwise noted)
SMALL - SIGNAL CHARACTERISTICS SYMBOL MIN MAX UNIT
Output Capacitance Cobo
( VCB = 10 Vdc, IE= 0, 100kHz f 1 MHz ) 8.0 pF
Input Capacitance Cibo
( VEB = 0.5 Vdc, IC= 0, 100kHz f 1 MHz ) 25 pF
SWITCHING CHARACTERISTICS SYMBOL MIN MAX UNIT
Turn - On Time ton
( VCC = 30 Vdc, IC= 150 mAdc,
IB1 =15 mAdc) ( See FIGURE 1 ) 35 ns
Turn - Off Time toff
( VCC = 30 Vdc, IC = 150 mAdc,
IB1 = - IB2 = 15 mAdc) ( See FIGURE 2 ) 300 ns
Small - Signal AC Characteristics (TA = 25°C)
LOW FREQUENCY SYMBOL MIN MAX UNIT
Common - Emitter Forward Current Transfer Ratio hfe
( IC = 1 mA, VCE = 10 V, f = 1kHz ) 75
HIGH FREQUENCY
Common - Emitter Forward Current Transfer Ratio |hfe|
( IC = 20 mA, VCE = 20 V, f = 100 MHz ) 2.5 12
MCC
2N2219A
Revision: A 2011/01/01
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Micro Commercial Components
www.mccsemi.com
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TO-39 CASE OUTLINE
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2N2219A
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FIGURE 1 Saturated Turn-on Time Test Circuit
FIGURE 2 Saturated Turn-off Time Test Circuit
t
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2N2219A
Revision: A 2011/01/01
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Micro Commercial Components
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FIGURE 3
FIGURE 4
.0001 .001 .01 .1 1
IC COLLECTOR CURRENT (A)
0
50
100
150
200
250
hFE CURRENT GAIN
0
50
100
150
200
250
DC CURRENT GAIN
VCE = 10 V
typ @ 25C
typ @ -55C
.0001 .001 .01 .1 1
IB, BASE CURRENT (A)
0.0
0.2
0.4
0.6
0.8
1.0
VCE, COLLECTOR-EMITTER (V)
0.0
0.2
0.4
0.6
0.8
1.0
COLLECTOR SATURATION vs BASE CURRENT
TJ = 25 C
IC = 500 mA
IC = 150 mA
MCC
2N2219A
Revision: A 2011/01/01
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Micro Commercial Components
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FIGURE 5
FIGURE 6
.001 .01 .1 1
IB, BASE CURRENT (A)
0.50
0.75
1.00
1.25
VBE, BASE-EMITTER VOLTAGE (V)
0.50
0.75
1.00
1.25
BASE SATURATION vs BASE CURRENT
TJ = 25 C
IC = 150 ma
IC = 500 ma
.01 .1 1 10 100
REVERSE JUNCTION VOLTAGE (V)
0
5
10
15
20
25
30
JUNCTION CAPACITANCE (pF)
0
5
10
15
20
25
30
JUNCTION CAPACITANCE
TJ = 25 C 100 kHz < f < 1 MHz
COBO
CIBO
MCC
2N2219A
Revision: A 2011/01/01
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Micro Commercial Components
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FIGURE 7
FIGURE 8
10 100 1000
COLLECTOR CURRENT (mA)
100
10
100
ton TIME (ns)
100
10
100
SWITCHING TURN - 0N TIME
TJ = 25 C IC/IB = 10
min.
max.
50010 100
COLLECTOR CURRENT (mA)
1000
100
1000
toff TIME (ns)
1000
100
1000
SWITCHING TURN - OFF TIME
TJ = 25 C IC/IB = 10
min.
max.
MCC
2N2219A
Revision: A 2011/01/01
TM
Micro Commercial Components
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FIGURE 9
1 10 100 1000
FREQUENCY MHz
.01
.1
1
NORMALIZED GAIN
.01
.1
1
NORMALIZED GAIN VS FREQUENCY
TJ = 25C IC = 20 mA VCE = 20 V
MCC
2N2219A
Revision: A 2011/01/01
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Micro Commercial Components
www.mccsemi.com
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Ordering Information :
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make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components
Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it
convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are
represented on our website, harmless against all damages.
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MCC's products are not authorized for use as critical components in life support devices or systems without the express written
approval of Micro Commercial Components Corporation.
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our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
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Device Packing
Part Number-BP
Bulk;50pcs/Box