2N5629 2N5630
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6029 2N6030 UNITS
Collector-Base Voltage VCBO 100 120 V
Collector-Emitter Voltage VCEO 100 120 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 16 A
Peak Collector Current ICM 20 A
Continuous Base Current IB 5.0 A
Power Dissipation PD 200 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 0.875 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 1.0 mA
ICEX V
CE=Rated VCEO, VEB=1.5V 1.0 mA
ICEX V
CE=Rated VCEO, VEB=1.5V, TC=150°C 5.0 mA
ICEO V
CE=½Rated VCEO 1.0 mA
IEBO V
EB=7.0V 1.0 mA
BVCEO I
C=200mA (2N5629, 2N6029) 100 V
BVCEO I
C=200mA (2N5630, 2N6030) 120 V
VCE(SAT) I
C=10A, IB=1.0A 1.0 V
VCE(SAT) I
C=16A, IB=4.0A 2.0 V
VBE(SAT) I
C=10A, IB=1.0A 1.8 V
VBE(ON) V
CE=2.0V, IC=8.0A 1.5 V
hFE V
CE=2.0V, IC=8.0A (2N5629, 2N6029) 25 100
hFE V
CE=2.0V, IC=8.0A (2N5630, 2N6030) 20 80
hFE V
CE=2.0V, IC=16A 4.0
hfe V
CE=10V, IC=4.0A, f=1.0kHz 15
fT V
CE=20V, IC=1.0A, f=500kHz 1.0 MHz
Cob V
CB=10V, IE=0, f=100kHz (NPN) 500 pF
Cob V
CB=10V, IE=0, f=100kHz (PNP) 1.0 nF
2N5629 2N5630 NPN
2N6029 2N6030 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5629, 2N6029
series devices are complementary silicon power
transistors, manufactured by the epitaxial base
process, designed for high voltage and high power
amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
R1 (19-March 2014)
www.centralsemi.com
2N5629 2N5630 NPN
2N6029 2N6030 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R2
www.centralsemi.com
R1 (19-March 2014)
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