Si1557DH Vishay Siliconix N- and P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) () ID (A) 0.235 at VGS = 4.5 V 1.3 0.280 at VGS = 2.5 V 1.2 0.340 at VGS = 1.8 V 1.0 0.535 at VGS = - 4.5 V - 0.86 0.880 at VGS = - 2.5 V - 0.67 1.26 at VGS = - 1.8 V - 0.56 * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFETs * Thermally Enhanced SC-70 Package * Fast Switching to Minimize Gate and Switching Losses * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Baseband dc-to-dc Converter Switch for Portable Electronics SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 EC XX YY Marking Code Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1557DH-T1-E3 (Lead (Pb)-free) Si1557DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 85 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 85 C Operating Junction and Storage Temperature Range PD P-Channel Steady State 5s Steady State 12 - 12 1.3 0.9 1.2 - 0.86 0.8 - 0.62 3 - 0.77 - 0.55 -2 0.5 0.39 - 0.5 - 0.39 0.6 0.47 0.6 0.47 0.3 0.25 0.3 0.25 TJ, Tstg Unit V 8 IDM Pulsed Drain Current Maximum Power Dissipationa ID 5s - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t5s Steady State Steady State RthJA RthJF Typical Maximum 170 210 220 265 105 125 Unit C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71944 S10-1054-Rev. C, 03-May-10 www.vishay.com 1 Si1557DH Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) N-Ch 0.45 1 P-Ch - 0.45 1 VDS = 0 V, VGS = 8 V IGSS IDSS VDS = VGS, ID = 100 A VDS = VGS, ID = - 100 A N-Ch 100 P-Ch 100 VDS = 9.6 V, VGS = 0 V N-Ch 1 VDS = - 9.6 V, VGS = 0 V P-Ch -1 VDS = 9.6 V, VGS = 0 V, TJ = 85 C N-Ch 5 VDS = - 9.6 V, VGS = 0 V, TJ = 85 C P-Ch VDS 5 V, VGS = 4.5 V N-Ch 3 VDS - 5 V, VGS = - 4.5 V P-Ch -2 ID(on) RDS(on) gfs VSD V nA A -5 A VGS = 4.5 V, ID = 1.2 A N-Ch 0.195 0.235 VGS = - 4.5 V, ID = - 0.77 A P-Ch 0.445 0.535 VGS = 2.5 V, ID = 1.0 A N-Ch 0.230 0.280 VGS = - 2.5 V, ID = - 0.6 A P-Ch 0.735 0.880 VGS = 1.8 V, ID = 0.2 A N-Ch 0.284 0.340 VGS = - 1.8 V, ID = - 0.2 A P-Ch 1.05 1.26 VDS = 5 V, ID = 1.2 A N-Ch 0.8 VDS = - 5 V, ID = - 0.77 A P-Ch 1.2 IS = 0.39 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 0.39 A, VGS = 0 V P-Ch - 0.8 - 1.2 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr N-Channel VDS = 6 V, VGS = 4.5 V, ID = 1.2 A P-Channel VDS = - 6 V, VGS = - 4.5 V, ID = - 0.1 A N-Channel VDD = 6 V, RL = 12 ID 0.5 A, VGEN = 4.5 V, Rg = 6 P-Channel VDD = - 6 V, RL = 12 ID - 0.5 A, VGEN = - 4.5 V, Rg = 6 N-Ch 0.8 1.2 P-Ch 1.1 1.8 N-Ch 0.15 P-Ch 0.3 N-Ch 0.20 P-Ch 0.25 nC N-Ch 15 25 P-Ch 17 25 N-Ch 25 40 P-Ch 30 45 N-Ch 25 40 P-Ch 15 25 N-Ch 10 15 P-Ch 10 15 IF = 0.39 A, dI/dt = 100 A/s N-Ch 20 40 IF = - 0.39 A, dI/dt = 100 A/s P-Ch 25 40 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71944 S10-1054-Rev. C, 03-May-10 Si1557DH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 4 4 TC = - 55 C VGS = 5 V thru 2.5 V 2V 3 ID - Drain Current (A) I D - Drain Current (A) 3 2 1.5 V 25 C 125 C 2 1 1 1V 0 0.0 0 0 1 2 3 4 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.6 100 0.5 80 C - Capacitance (pF) R DS(on) - On-Resistance () 1.0 0.4 VGS = 1.8 V 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 Ciss 60 40 Coss 20 Crss 0.0 0 0 1 2 3 4 0 3 ID - Drain Current (A) 12 Capacitance 1.6 5 VGS = 4.5 V ID = 1.2 A VDS = 6 V ID = 1.2 A 1.4 3 2 (Normalized) 4 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 9 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 1.2 1.0 0.8 1 0 0.0 6 0.2 0.4 0.6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71944 S10-1054-Rev. C, 03-May-10 0.8 1.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1557DH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.6 4 RDS(on) - On-Resistance () I S - Source Current (A) 0.5 TJ = 150 C 1 TJ = 25 C 0.4 ID = 1.2 A 0.3 ID = 0.2 A 0.2 0.1 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.2 5 0.1 4 0.0 Power (W) VGS(th) Variance (V) ID = 100 A - 0.1 3 2 - 0.2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 TJ - Temperature (C) 10-1 1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 10 I D - Drain Current (A) Limited by RDS(on)* IDM Limited 1 1 ms ID Limited 10 ms 0.1 100 ms TA = 25 C Single Pulse 1 s, 10 s, DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 71944 S10-1054-Rev. C, 03-May-10 Si1557DH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 220 C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 71944 S10-1054-Rev. C, 03-May-10 www.vishay.com 5 Si1557DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 3.0 3.0 VGS = 5 V thru 3.5 V 2.0 2.5 V 1.5 1.0 2V 0.5 1.5 V TC = - 55 C 2.5 3V 25 C I D - Drain Current (A) I D - Drain Current (A) 2.5 125 C 2.0 1.5 1.0 0.5 0.0 0.0 0 1 2 3 4 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 160 2.0 1.6 120 VGS = 2.5 V C - Capacitance (pF) R DS(on) - On-Resistance () VGS = 1.8 V 1.2 0.8 VGS = 4.5 V Ciss 80 Coss 40 0.4 Crss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 3 1.6 VGS = 4.5 V ID = 0.8 A VDS = 6 V ID = 0.8 A 1.4 3 2 (Normalized) 4 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 Capacitance 5 1.2 1.0 0.8 1 www.vishay.com 6 9 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 0 0.0 6 0.3 0.6 0.9 1.2 1.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 71944 S10-1054-Rev. C, 03-May-10 Si1557DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 3.0 3 RDS(on) - On-Resistance () I S - Source Current (A) 2.5 TJ = 150 C 1 TJ = 25 C 2.0 ID = 0.8 A 1.5 ID = 0.2 A 1.0 0.5 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 3 4 5 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.3 5 0.2 4 ID = 100 A 0.1 Power (W) VGS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0.0 - 0.1 - 0.2 - 50 3 2 1 - 25 0 25 50 75 100 125 0 10-3 150 10-2 TJ - Temperature (C) 10-1 1 10 100 600 Time (s) Single Pulse Power Threshold Voltage 10 I D - Drain Current (A) Limited by RDS(on)* IDM Limited 1 1 ms ID Limited 0.1 10 ms 100 ms TA = 25 C Single Pulse 1 s, 10 s, DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 71944 S10-1054-Rev. C, 03-May-10 www.vishay.com 7 Si1557DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 220 C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71944. www.vishay.com 8 Document Number: 71944 S10-1054-Rev. C, 03-May-10 Package Information Vishay Siliconix SC70: 6LEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 - 1.10 0.035 - 0.043 - - 0.10 - - 0.004 0.80 - 1.00 0.031 - 0.039 0.15 - 0.30 0.006 - 0.012 0.10 - 0.25 0.004 - 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946--Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 AN816 Vishay Siliconix Dual-Channel LITTLE FOOTR 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance INTRODUCTION 87 (mil) 26 (mil) The new dual 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small to medium load applications where a miniaturized package is required. Devices in this package come in a range of on-resistance values, in n-channel and p-channel versions. This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for the dual-channel version. 6 5 96 (mil) 71 (mil) 48 (mil) 23 (mil) 61 (mil) 1 PIN-OUT 4 2 3 0.0 (mil) Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. Both n-and p-channel devices are available in this package - the drawing example below illustrates the p-channel device. 26 (mil) 16 (mil) FIGURE 2. SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the SC-70 6-pin basic pad layout and dimensions. This pad pattern is sufficient for the low-power applications for which this package is intended. Increasing the drain pad pattern (Figure 2) yields a reduction in thermal resistance and is a preferred footprint. Document Number: 71405 12-Dec-03 8 (mil) SC-70 (6 leads) Dual EVALUATION BOARD FOR THE DUALCHANNEL SC70-6 The 6-pin SC-70 evaluation board (EVB) shown in Figure 3 measures 0.6 in. by 0.5 in. The copper pad traces are the same as described in the previous section, Basic Pad Patterns. The board allows for examination from the outer pins to the 6-pin DIP connections, permitting test sockets to be used in evaluation testing. The thermal performance of the dual 6-pin SC-70 has been measured on the EVB, comparing both the copper and Alloy 42 leadframes. This test was then repeated using the 1-inch2 PCB with dual-side copper coating. A helpful way of displaying the thermal performance of the 6-pin SC-70 dual copper leadframe is to compare it to the traditional Alloy 42 version. www.vishay.com 1 AN816 Vishay Siliconix Front of Board SC70-6 Back of Board SC70-6 S1 D1 G1 G2 D2 S2 vishay.com SC70-6 DUAL FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) COOPER LEADFRAME Room Ambient 25 _C Thermal performance for the dual SC-70 6-pin package is measured as junction-to-foot thermal resistance, in which the "foot" is the drain lead of the device as it connects with the body. The junction-to-foot thermal resistance for this device is typically 80_C/W, with a maximum thermal resistance of approximately 100_C/W. This data compares favorably with another compact, dual-channel package - the dual TSOP-6 - which features a typical thermal resistance of 75_C/W and a maximum of 90_C/W. PD + Elevated Ambient 60 _C T J(max) * T A Rq JA PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 224 CW o o P D + 150 Co* 60 C 224 CW P D + 558 mW P D + 402 mW Although they are intended for low-power applications, devices in the 6-pin SC-70 dual-channel configuration will handle power dissipation in excess of 0.5 W. TESTING Power Dissipation The typical RJA for the dual-channel 6-pin SC-70 with a copper leadframe is 224_C/W steady-state, compared to 413_C/W for the Alloy 42 version. All figures are based on the 1-inch2 FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at varying ambient temperatures. To further aid the comparison of copper and Alloy 42 leadframes, Figures 4 and 5 illustrate the dual-channel 6-pin SC-70 thermal performance on two different board sizes and pad patterns. The measured steady-state values of RJA for the dual 6-pin SC-70 with varying leadframes are as follows: LITTLE FOOT 6-PIN SC-70 1) Minimum recommended pad pattern on the EVB board (see Figure 3). Alloy 42 Leadframe 1-inch2 2) Industry standard PCB with maximum copper both sides. ALLOY 42 LEADFRAME Room Ambient 25 _C PD + T J(max) * T A PD + T J(max) * T A Rq JA o o P D + 150 Co* 25 C 413 CW o o P D + 150 Co* 60 C 413 CW P D + 303 mW P D + 218 mW www.vishay.com 2 Rq JA Elevated Ambient 60 _C Alloy 42 Copper 518_C/W 344_C/W 413_C/W 224_C/W The results indicate that designers can reduce thermal resistance (JA) by 34% simply by using the copper leadframe device as opposed to the Alloy 42 version. In this example, a 174_C/W reduction was achieved without an increase in board area. If an increase in board size is feasible, a further 120_C/W reduction can be obtained by utilizing a 1-inch2. PCB area. The Dual copper leadframe versions have the following suffix: Dual: Compl.: Si19xxEDH Si15xxEDH Document Number: 71405 12-Dec-03 AN816 500 500 400 400 Thermal Resistance (C/W) Thermal Resistance (C/W) Vishay Siliconix 300 Alloy 42 200 Copper 100 300 Alloy 42 200 100 Copper 0 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 10-5 Dual SC70-6 Thermal Performance on EVB Document Number: 71405 12-Dec-03 10-3 10-2 10-1 1 10 100 1000 Time (Secs) Time (Secs) FIGURE 4. 10-4 FIGURE 5. Dual SC70-6 Comparison on 1-inch2 PCB www.vishay.com 3 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000