MMBT4403T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * A Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401T) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) SOT-523 C TOP VIEW B E Mechanical Data * * * * * * * * * B C G Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: 2T, See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.002 grams (approximate) H K N J M L D C E B Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0 8 All Dimensions in mm Maximum Ratings @TA = 25C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -600 mA Power Dissipation (Note 1) Pd 150 mW Thermal Resistance, Junction to Ambient (Note 1) RJA 833 C/W Tj, TSTG -55 to +150 C Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30273 Rev. 8 - 2 1 of 4 www.diodes.com MMBT4403T (c) Diodes Incorporated Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO -40 V IC = -100A, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 V IE = -100A, IC = 0 ICEX -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 300 IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V Collector-Emitter Saturation Voltage VCE(SAT) -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 k Voltage Feedback Ratio hre 0.1 8.0 x 10 Small Signal Current Gain hfe 60 500 Output Admittance hoe 1.0 100 S fT 200 MHz Delay Time td 15 ns Rise Time tr 20 ns Storage Time ts 225 ns Fall Time tf 30 ns Collector Cutoff Current Base Cutoff Current Test Condition ON CHARACTERISTICS (Note 5) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product -4 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS Notes: VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA 5. Short duration pulse test used to minimize self-heating effect. 200 40 30 Note 1 150 20 CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA 100 Cibo 10 5.0 50 Cobo 0 0 1.0 -0.1 80 40 120 160 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve, Total Package DS30273 Rev. 8 - 2 2 of 4 www.diodes.com -1.0 -10 REVERSE VOLTS (V) Fig. 2 Capacitances (Typical) -30 MMBT4403T (c) Diodes Incorporated 0.5 1.4 IC = 10mA IC = 1mA 1.2 IC = 100mA I = 300mA C IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.4 TA = 25C 0.3 TA = 150C 0.2 0.1 T A = 50C 0 1 0.1 10 100 IB BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region 0.01 1.0 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current 1,000 VCE = 5V VCE = 5V 0.9 TA = 150C 0.8 hFE, DC CURRENT GAIN VBE(ON), BASE EMITTER VOLTAGE (V) = 10 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) VCE COLLECTOR-EMITTER VOLTAGE (V) 1.6 TA = -50C 0.7 T A = 25C 0.6 0.5 TA = 150C 0.4 TA = 25C 100 TA = -50C 10 0.3 0.2 1 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Base-Emitter Voltage vs. Collector Current 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 6 DC Current Gain vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current DS30273 Rev. 8 - 2 3 of 4 www.diodes.com MMBT4403T (c) Diodes Incorporated Ordering Information (Note 6) Packaging SOT-523 Device MMBT4403T-7-F Notes: Shipping 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2T = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2TYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30273 Rev. 8 - 2 4 of 4 www.diodes.com MMBT4403T (c) Diodes Incorporated