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H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers

H11AA1M, H11AA4M Rev. 1.3

April 2015

H11AA1M, H11AA4M

6-Pin DIP AC Input Phototransistor Optocouplers

Features

■

Bi-polar Emitter Input

■

Built-in Reverse Polarity Input Protection

■

Safety and Regulatory Approvals:

– UL1577, 4,170 VAC

RMS

for 1 Minute

– DIN-EN/IEC60747-5-5, 850 V Peak Working

Insulation Voltage

Applications

■

AC Line Monitor

■

Unknown Polarity DC Sensor

■

Telephone Line Interface

Description

The H11AA1M and H11AA4M devices consist of two

gallium-arsenide infrared emitting diodes connected in

inverse parallel driving a single silicon phototransistor

output.

Schematic Package Outlines

Figure 2. Package Outlines

Figure 1. Schematic

5 COLLECTOR

4 EMITTER

BASE

H11AA1M, H11AA4M Rev. 1.3 2

H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers

Safety and Insulation Ratings

As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit

data. Compliance with the safety ratings shall be ensured by means of protective circuits.

Note:

1. Safety limit values – maximum values allowed in the event of a failure.

Parameter Characteristics

Installation Classiﬁcations per DIN VDE

0110/1.89 Table 1, For Rated Mains Voltage

< 150 V

RMS

I–IV

< 300 V

RMS

I–IV

Climatic Classiﬁcation 55/100/21

Pollution Degree (DIN VDE 0110/1.89) 2

Comparative Tracking Index 175

Symbol Parameter Value Unit

Input-to-Output Test Voltage, Method A, V

IORM

x 1.6 = V

Type and Sample Test with t

= 10 s, Partial Discharge < 5 pC 1360 V

peak

Input-to-Output Test Voltage, Method B, V

IORM

x 1.875 = V

100% Production Test with t

= 1 s, Partial Discharge < 5 pC 1594 V

peak

IORM

Maximum Working Insulation Voltage 850 V

peak

IOTM

Highest Allowable Over-Voltage 6000 V

peak

External Creepage

≥

7mm

External Clearance

≥

7mm

External Clearance (for Option TV, 0.4" Lead Spacing)

≥

10 mm

DTI Distance Through Insulation (Insulation Thickness)

≥

0.5 mm

Case Temperature

(1)

175 °C

S,INPUT

Input Current

(1)

350 mA

S,OUTPUT

Output Power

(1)

800 mW

Insulation Resistance at T

, V

= 500 V

(1)

> 10

H11AA1M, H11AA4M Rev. 1.3 3

H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol Parameter Value Unit

TOTAL DEVICE

STG

Storage Temperature -40 to +125 °C

OPR

Operating Temperature -40 to +100 °C

Junction Temperature -40 to +125 ºC

SOL

Lead Solder Temperature 260 for 10 seconds °C

Total Device Power Dissipation @ 25°C 270 mW

Derate Linearly From 25°C 2.94 mW/°C

EMITTER

Continuous Forward Current 60 mA

(pk) Forward Current – Peak (1 µs pulse, 300 pps) ±1.0 A

LED Power Dissipation @ 25°C 120 mW

Derate Linearly From 25°C 1.41 mW/°C

DETECTOR

Continuous Collector Current 50 mA

Detector Power Dissipation @ 25°C 150 mW

Derate linearity from 25°C 1.76 mW/°C

H11AA1M, H11AA4M Rev. 1.3 4

H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers

Electrical Characteristics

= 25°C Unless otherwise speciﬁed.

Individual Component Characteristics

Transfer Characteristics

Isolation Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit

EMITTER

Input Forward Voltage I

= ±10 mA 1.17 1.50 V

Capacitance V

= 0 V, f = 1.0 MHz 80 pF

DETECTOR

CEO

Breakdown Voltage, Collector-to-Emitter I

= 1.0 mA, I

= 0 30 100 V

CBO

Breakdown Voltage, Collector-to-Base I

= 100 µA, I

= 0 70 120 V

EBO

Breakdown Voltage, Emitter-to-Base I

= 100 µA, I

= 0 5 10 V

ECO

Breakdown Voltage, Emitter-to-Collector I

= 100 µA, I

= 0 7 10 V

CEO

Leakage Current, Collector-to-Emitter V

= 10 V, I

= 0 1 50 nA

Capacitance Collector to Emitter V

= 0, f = 1 MHz 10 pF

Collector to Base V

= 0, f = 1 MHz 80 pF

Emitter to Base V

= 0, f = 1 MHz 15 pF

Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit

CTR

Current Transfer Ratio,

Collector-to-Emitter I

= ±10 mA, V

= 10 V H11AA1M 20 %

H11AA4M 100 %

Current Transfer Ratio,

Symmetry

= ±10 mA, V

= 10 V

(Figure 13) All 0.33 3.00

CE(SAT)

Saturation Voltage,

Collector-to-Emitter I

= ±10 mA, I

= 0.5 mA All 0.40 V

Symbol Characteristic Test Conditions Min. Typ. Max. Unit

ISO

Input-Output Isolation Voltage t = 1 Minute 4170 VAC

RMS

ISO

Isolation Capacitance V

I-O

= 0 V, f = 1 MHz 0.7 pF

ISO

Isolation Resistance V

I-O

= ±500 VDC, T

= 25°C 10

H11AA1M, H11AA4M Rev. 1.3 5

H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers

Typical Performance Characteristics

Figure 4. Normalized CTR vs. Forward Current

IF – FORWARD CURRENT (mA)

NORMALIZED CTR

Figure 5. Normalized CTR vs. Ambient Temperature

NORMALIZED CTR

TA – AMBIENT TEMPERATURE (°C)

Figure 7. CTR vs. RBE (Saturated)

RBE- BASE RESISTANCE (kΩ)

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

Figure 6. CTR vs. RBE (Unsaturated)

RBE – BASE RESISTANCE (kΩ)

NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))

Figure 8. Collector-Emitter Saturation Voltage

vs. Collector Current

IC - COLLECTOR CURRENT (mA)

VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V)

Figure 3. Input Voltage vs. Input Current

VF – INPUT VOLTAGE (V)

– INPUT CURRENT (mA)

0.01 0.1 1 10

0.001

0.01

0.1

100

= 25°C

IF = 2.5mA

IF = 20mA

IF = 10mA

IF = 5mA

-2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0

-100

-80

-60

-40

-20

100

TA = 25°C

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VCE = 5V

TA = 25°C

IF = 10 mA

IF = 5 m A

IF = 20mA

10 100 1000

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VCE = 0.3 V

TA = 25°C

IF = 10 m A

IF = 5 m A

IF = 20 m A

-60 -40 -20 0 20 40 60 80 100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

IF = 10 mA

VCE = 5 V

Normalized to IF = 10 mA , TA = 25°C

IF = 5 mA

IF = 20 mA

0 5 10 15 20

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

TA = 25°C

VCE = 5 V

Normalized to IF = 10 mA

H11AA1M, H11AA4M Rev. 1.3 6

H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers

Typical Performance Characteristics

(Continued)

NORMALIZED t

– (t

on(R

)

/ t

on(open)

)

Figure 10. Normalized ton vs. RBE

RBE- BASE RESISTANCE (kΩ)

Figure 9. Switching Speed vs. Load Resistor

R – LOAD RESISTOR (kΩ)

SWITCHING SPEED (μs)

NORMALIZED t

off

– (t

off(R

)

/ t

off(open)

)

Figure 11. Normalized toff vs. RBE

RBE – BASE RESISTANCE (kΩ)

Figure 12. Dark Current vs. Ambient Temperature

TA – AMBIENT TEMPERATURE

(°C)

ICEO – COLLECTOR -EMITTER DARK CURRENT (nA)

VCE – COLLECTOR TO EMITTER VOLTAGE (V)

.01 .05 .1 .5 5110

NORMALIZED OUTPUT CURRENT

.01

.005

.05

0.1

0.5

Figure 13. Output Symmetry Characteristics

IF = I - 10 mA I

IF = I 10 mA I

NORMALIZED TO:

VCE = 10 V

IF = 10 mA

THE MAXIMUM PEAK

OUTPUT CURRENT

WILL BE NO MORE

THAN THREE TIMES

THE MINIMUM PEAK

OUTPUT CURRENT AT

IF = ±10 mA

10 100 1000 10000 100000

VCC = 10 V

IC = 2 mA

RL = 100 Ω

TA = 25°C

10 100 1000 10000 100000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VCC = 10 V

IC = 2 m A

RL = 100 Ω

TA = 25°C

0.1 1 10 100

0.1

100

1000

IF = 10 mA

VCC = 10 V

TA = 25°C

Toff

Ton

0 20406080100

0.1

100

1000

10000

VCE = 10 V

VCE = 30 V

H11AA1M, H11AA4M Rev. 1.3 7

H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers

Reflow Profile

Figure 14. Reflow Profile

300

280

260

240

220

200

180

160

140

120

100

°C

Time (s)

0 60 180120 270

260°C

> 245°C = 42 s

Time above

183°C = 90 s

360

1.822°C/s Ramp-up rate

33 s

H11AA1M, H11AA4M Rev. 1.3 8

H11AA1M, H11AA4M — 6-Pin DIP AC Input Phototransistor Optocouplers

Ordering Information

Note:

2. The product orderable part number system listed in this table also applies to the

H11AA4M

device.

Marking Information

Figure 15. Top Mark

Table 1. Top Mark Deﬁnitions

Part Number Package Packing Method

H11AA1M DIP 6-Pin Tube (50 Units)

H11AA1SM SMT 6-Pin (Lead Bend) Tube (50 Units)

H11AA1SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)

H11AA1VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)

H11AA1SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)

H11AA1SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)

H11AA1TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)

1 Fairchild Logo

2 Device Number

3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)

4 One-Digit Year Code, e.g., “5”

5 Digit Work Week, Ranging from “01” to “53”

6 Assembly Package Code

H11AA1

V X YY Q

43 5

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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