SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 - MARCH 2001
PARTMARKING DETAILS –
BCW68F – DF BCW68FR – 7T
BCW68G – DG BCW68GR – 5T
BCW68H – DH BCW68HR – 7N
COMPLEMENTARY TYPES – BCW66
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage VCES -60 V
Collector-Emitter Voltage VCEO -45 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current(10ms) ICM -1000 mA
Continuous Collector Current IC-800 mA
Base Current IB-100 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
BCW68
C
B
E
SOT23
TBA
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage V(BR)CEO -45 V ICEO
=-10mA
V(BR)CES -60 IC=-10µA
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IEBO
=-10µA
Collector-Emitter
Cut-off Current ICES -20
-10 nA
µAVCES
=-45V
VCES
=-45V, Tamb
=150°C
Emitter-Base Cut-Off Current IEBO -20 nA VEBO
=-4V
Collector-Emitter Saturation
Voltage VCE(sat) -0.7 -0.3 V
VIC=-100mA, IB = -10mA
IC= -500mA, IB =-50mA*
Base-Emitter Saturation Voltage VBE(sat) -2 V IC=-500mA,IB=-50mA*
Static
Forward
Current
Transfer
BCW68F hFE 100
35 170 250 IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
BCW68G hFE 160
60 250 400 IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
BCW68H hFE 250
100 350 630 IC=-100mA, VCE =-1V*
IC=-500mA, VCE =-2V*
Transition Frequency fT100 MHz IC =-20mA, VCE =-10V
f = 100MHz
Output Capacitance Cobo 12 18 pF VCB =-10V, f =1MHz
Input Capacitance Cibo 80 pF VEB
=-0.5V, f =1MHz
Noise Figure N 2 10 dB IC= -0.2mA, VCE =- 5V
RG =1KΩ, f=1KH
∆f=200Hz
Switching times:
Turn-On Time
Turn-Off Time ton
toff
100
400 ns
ns IC=-150mA
IB1=- IB2 =-15mA
RL=150Ω
Spice parameter data is available upon request for this device
*Measured under pulsed conditions.
BCW68
TBA
