2SD2131
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2131
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
• High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
• Zener diode included between collector and base.
• Unclamped inductive load energy: E = 150 mJ (min)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 60 ± 10 V
Collector-emitter voltage VCEO 60 ± 10 V
Emitter-base voltage VEBO 7 V
DC IC 5
Collector current
Pulse ICP 8
A
Base current IB 0.5 A
Ta = 25°C 2.0
Collector power
dissipation Tc = 25°C
PC
30
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC ―
JEITA SC-67
TOSHIBA 2-10R1A
Weight: 1.7 g (typ.)
Base
Emitter
≈ 5 kΩ ≈ 150 Ω
Collector
2SD2131
2006-11-21
2
Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 45 V, IE = 0 ― ― 10 μA
Collector cut-off current ICEO V
CE = 45 V, IB = 0 ― ― 10 μA
Emitter cut-off current IEBO V
EB = 6 V, IC = 0 ― ― 2.5 mA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 50 60 70 V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V
hFE (1) VCE = 3 V, IC = 3 A 2000 ― 15000
DC current gain
hFE (2) V
CE = 3 V, IC = 5 A 1000 ― ―
VCE (sat) (1) IC = 3 A, IB = 6 mA ― 1.1 1.5
Collector-emitter saturation voltage
VCE (sat) (2) IC = 5 A, IB = 20 mA ― 1.3 2.5
V
Base-emitter saturation voltage VBE (sat) I
C = 3 A, IB = 6 mA ― 1.7 2.5 V
Unclamped inductive load energy ES/B (Note 1) 150 ― ― mJ
Turn-on time ton ― 1.0 ―
Storage time tstg ― 4.0 ―
Switching time
Fall time tf
IB1 = −IB2 = 6 mA, duty cycle ≤ 1%
― 2.5 ―
μs
Note 1: Measurement circuit for unclamped inductive load energy
Note 2: (1) Pulse width adjusted for desired ICP (ICP = 5.47 A min)
(2) E = 1/2 L ICP2
Marking
IB1
20 μs
Input
IB2
VCC = 30 V
IB1
IB2
Output
10 Ω
T.U.T
IB1
IB2
VCC
L = 10 mH IB1 = 0.1 A
0
0
ICP
IC
VCE
IB2 = −0.1 A
PW
Clamp (C-B Zener)
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
D2131
Part No. (or abbreviation code)
2SD2131
2006-11-21
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
Base current IB (mA)
VCE – IB
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
0
0
2
4
2 4 6 8
5 Common
emitter
Tc = 2 5 ° C
10
6
8
IB = 0.3 mA
3
2
1
0.7
0.5
0
1.5
0
0
2
4
0.8 1.6 2.4 3.2
Common emitter
VCE = 3 V
4.0
6
8
Tc = 100°C
25
−55
30000
0.05
Common emitter
VCE = 3 V
200
1000
5000
10000
0.1 0.3 3 5
Tc = 100°C
25
−55
20 0.5 1 10
500
3000
0.1
10
Tc = −55°C
100
25
Common emitter
IC/IB = 250
10
0.3
0.3 0.5 1 3 5
0.5
1
3
5
0.1
10
Tc = −55°C
100
25
Common emitter
IC/IB = 250
10
0.3
0.3 0.5 1 3 5
0.5
1
3
5
0.1
2.4
1
Common emitter
Tc = 2 5 ° C
0
0.3 0.5 1 3 10 100 300
0.4
0.8
1.2
1.6
2.0
5 30 50
IC = 8 A
3
5
0.1
2SD2131
2006-11-21
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Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
0
0
5
(1) Tc = Ta
Infinite heat sink
(2) No heat sink
15
30
25 50 75 100 125 175 150
10
20
35
25
(1)
(2)
5 10 30
0.1
1
0.3
1
3
5
IC max (pulsed)*
VCEO max
10 ms*
3 100
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
DC operation
Tc = 25°C
IC max (continuous)
50
0.5
10
1 ms*
20
Pulse width tw (s)
Rth – tw
Transient thermal resistance Rth (°C/W)
0.001 1000
10
100
0.01 0.1
30
0.3
3
1
100 10 1
0.1
(1) No heat sink Ta = 25°C
(2) Infinite heat sink Tc = 25°C
(2)
(1)
2SD2131
2006-11-21
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RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
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